Advanced Power MOSFET IRFW/IZ14A FEATURES M Avalanche Rugged Technology = 0.140 M Rugged Gate Oxide Technology Rog(on) 0.14 | i _ ower Input Capacitance Ip - 10A M Improved Gate Charge M Extended Safe Operating Area . P 9 D2-PAK P-PAK M@ 175; Operating Temperature M Lower Leakage Current : 10 HA(Max.) @ Vog = 60V M Lower Rogion) : 0.097 2 (Typ.) 16 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units Voss Drain-to-Source Voltage 60 Vv Continuous Drain Current (T.=25C ) 10 A Continuous Drain Current (T,=100C) 7.1 lom Drain Current-Pulsed @ 40 A Ves Gate-to-Source Voltage +20 Vv Eas Single Pulsed Avalanche Energy @ 86 mJ lar Avalanche Current @ 10 A Ear Repetitive Avalanche Energy Q@ 3 mJ dv/dt Peak Diode Recovery dv/dt ) 5.5 V/ns Total Power Dissipation (T,=25C )* 3.8 w Py Total Power Dissipation (T,.=25C ) 30 W Linear Derating Factor 0.2 W/C TT Operating Junction and 55 to 4175 ; - Oo + v7 ste Storage Temperature Range oO T Maximum Lead Temp. for Soldering 300 C " Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R eic6 Junction-to-Case -- 4.96 Rosa Junction-to-Ambient * - 40 C/W R oa Junction-to-Ambient -- 62.5 * When mounted on the minimum pad size recommended (PCB Mount). ELECTRONICSIRFW/IZ14A N-CHANNEL POWERMOSFET Electrical Characteristics (T.=25C unless otherwise specified) Symbol Characteristic Min. | Typ. | Max.| Units Test Condition BVpss_| Drain-Source Breakdown Voltage | 60 | -- -- Vs] Veg=0V,Ip=250 NA ABV/AT, | Breakdown Voltage Temp. Coeff.} -- |0.059| -- | VC]| |)=250HA See Fig 7 Vasth) | Gate Threshold Voltage 20] - | 4.0] V_ | Vps=5V,|p=250nA less Gate-Source Leakage , Forward ~ | ~ 1100] Ves=20V Gate-Source Leakage , Reverse -- -- |-100 Vag=-20V -- -- 10 Vps=60V loss Drain-to-Source Leakage Current ~ T00 yA Voe=48V,T,=150C Static Drain-Source R - | - Veg=10V,Ip=5A Stn) _| On-State Resistance 0.14) os vp is Forward Transconductance - | 63] -- | Vps=30V,Ip=5A @ Ciss Input Capacitance -- | 280 | 360 Veg=0V,Vpg=25V,f =1MHz Coss Output Capacitance ~ 1110] 125] pF . - See Fig 5 Ciss Reverse Transfer Capacitance - | 40 | 46 t Turn-On Delay Time - | 11 7 25 a Y Vpp=30V, |5=10A, t, Rise Time - | 17 ] 40 ; ns | Rg=240 tavoth Turn-Off Delay Time -- | 27 | 60 See Fig 13 ee Fi t Fall Time - | 28 | 60 g 6@ Qg Total Gate Charge - | 12 |] 17 Vps=48V,Veg=10V, Qgs Gate-Source Charge - [24] - | nC | 1,=10A Qga Gate-Drain( Miller) Charge - | 54] - See Fig 6 & Fig12 @ Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. | Typ. | Max.| Units Test Condition Is Continuous Source Current - - | 10 A Integral reverse pn-diode Ism Pulsed-Source Current @]| - -- | 40 in the MOSFET Vep Diode Forward Voltage @]| - - | 15] V | T)=25C,1.=10A,Ves5= OV tr Reverse Recovery Time - | 55] - ns | Tj=25C,|,=10A Qe Reverse Recovery Charge - |O.11] -- uC | di-/dt=100A/1s Notes ; Q@ Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature @ L=1mH, |,g=10A, Vpp=25V, Rg=27 , Starting T,=25C @ lgp<10A, di/dt <200A/Hs, Vop <BVps,, Starting T, =25 C @ Pulse Test : Pulse Width = 250 tts, Duty Cycle <2% Essentially Independent of Operating TemperatureDrain-Source On-Resistance [pF] Capacitance N-C HANNEL POWERMOSIET IRFW/IZ14A Fig 1. Output Characteristics Fig 2. Transfer Characteristics a Top : a sb ov b lo 5 1c s u u uy uy 5 5 S r S 4 4 oO r o 10 a ae : a @ Notes : fn] 1.Vo=0V a 7 @ Nctes = P 2. =30V 1. 250ps Pulse Test: 3. 250s Test 2: q = 25C i cL i i 1 10+ ie 10 ne 4 6 8 10 Vug 1 Drain-Source Voltage [V] V., 1 Gate-Source Voltage [V] : : : Ey : on: Fig 3. On-Resistance vs. Drain Current = Fig 4. Source-Drain Diode Forward Voltage 0.20 - - 7 7 7 aa] Ga o : 4 Vig =110 V 3 0.15 a geeeneeeeeeeeeeny Oo Wk E - G a A L 0.10 o yn a 1b > F : @ E : 0.05 m r : . @ Notes : ra : LV =0V @ Note : T. = 25C we ea : : : cS : : : 2. 250 us Pulse Test 0.00 1 1 1 1 1 1 1 1 is? i i i i 9 10 20 30 40 04 06 O8 10 12 14 16 18 20 22 2.4 Ie Drain Current [A] Vie Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 00 _ Cree Got Gg (Gg Shorted) > : : Sect Suet S LM = 2. oss is gd ob oo Gea & oO : rss gd o Vos =30 Vv; a] : 4 : S Looe eee he Mig. 48 oO v uy 5 OBB fete wn | oO aay G oO L wo @ Notes i Bo 10A oO i 1 i 1 ji i i 1 oO 1 1 1 1 1 1 1 1 1 if igh 0 3 6 9 12 15 Vi, , Drain-Source Voltage [V] Q, , Total Gate Charge [nc]IRFW/IZ14A POWERMOSEET (Normalized) BVn gs Fig 11. Thermal Response ii o bc n . o Poe Q n Bee Qa * et [nnn] @ Notes qd = 3 10 are oe Pay OTS aC CMa ; LY 24) (Duty Factor, D=p/t; 2 . f By Te Pom Poa. ft) m Leer 7 ae 1o7 1074 1o7$ 107? 1o7+ 10 10+ t, , Square Wave Pulse Duration [sec] Single -pulse (tC) oO o Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature pb 1.2 - - - - - - - - - - OM 2.5 aan o o S > r S oO n 6 No 6 Llp Ng 2:0F a4 oH G oO I oO & S L a 4 Oo 2 @ 1.0F-- ~~ vo 15k v uy u ~ oO 5 ~ 0 o EW L a : : : 2] | , : : : : : : a G & OL 9p einer et tee fettterteets @ Notes : ad 1.0b @ Notes : G lV =0V M 1.V_=10V a Gs a GS a - - 2. T= 250A 2.D=5A 0. i i i i i i i 1 1 1 0.5 i i i i i i i L L L 15 50 25 0 25 50 15 loo 6125) 6150 6175200 -715 50 25 0 25 50 15 100 6125 6150 175-200 T, Junction Temperature Pc] T, + dunction Temperature c] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature - 7 7 12 a 102 Operation in This: Area a BE - 7 is Tamited oy. Bos (oii) bo : : 10 v v S oO S oO oO a L a u a 8h 5 10 = 5 4 Sook G G a a a a x 4b a 10 @ Notes : a q 1. B= 25C q L. .. : 2. T = 175C ar 3. Single Pulse tot pe pe ole a a 1? 1g! 1 25 50 15 100 125 150 175 Vg Drain-Source Voltage [V] T, , Case Tenperature (Sc)POWERMOSEET IRFW/IZ14A Fig 12. Gate Charge Test Circuit & Waveform Current Regulator Vos + Same Type as DUT Q 12V = Lov & Vo Qas > Qea | #) DUT & 3mA | _> R, R; $n Current Sampling (Ig) Current Sampling (Ip) Charge Resistor Resistor Fig 13. Resistive Switching Test Circuit & Waveforms out Vop (0.5 rated Vps) DUT Vin ' | | ' 10V | | t | | tect t tao ton t oee Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L 1 BVpss L E AS D7 L, I AS) Vos ON BYpss ~ Vp Vary t, to obtain oe Ip BVpss required peak I, to Tas ==C =Vp bho DUT - Vpp . Vps (t) 10V a \ j<_ 1, m| TimeIRFW/1Z14A POWERMOSET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT | << L <- ony Is of L Driver Vag R Same Type G 4) as DUT FH Vop Vos dv/dt controlled by R, 1, controlled by Duty Factor D Vv D=- Gate Pulse Width i ss ~ Gate Pulse Period 10V ( Driver ) t Izy Body Diode Forward Current Ty (DUT ) di/dt tow] XO RM Body Diode Reverse Current (DUT) Body Diode Recovery dv/dt Ve Vpp \ | L tT Body Diode Forward Voltage Drop ELECTRONICS