© 2000 IXYS All rights reserved 1 - 2
VRRM Type
V
1200 VUB 71-12 NO1
1600 VUB 71-16 NO1
IGBTFast Recovery Diode
Module Rectifier Diodes
Symbol Test Conditions Maximum Ratings
VRRM 1200 / 1600 V
IdAV TH= 110°C, sinusoidal 120°59 A
IdAVM limited by leads 70 A
IFSM TVJ = 45°C,t = 10 ms, VR = 0 V 530 A
TVJ = 150°C,t = 10 ms, VR = 0 V 475 A
I2tTVJ = 45°C,t = 10 ms, VR = 0 V 1400 A
TVJ = 150°C,t = 10 ms, VR = 0V 1130 A
Ptot TH= 25°C per diode 90 W
VCES TVJ = 25°C to 150°C 1200 V
VGE Continuous ± 20 V
IC25 TH= 25°C, DC 43 A
IC80 TH= 80°C, DC 29 A
ICM tp= Pulse width limited by TVJM 90 A
Ptot TH= 80°C 160 W
VRRM 1200 V
IFAV TH= 80°C, rectangular d = 0.5 9 A
IFRMS TH= 80°C, rectangular d = 0.5 14 A
IFRM TH= 80°C, tP = 10 ms, f = 5 kHz 90 A
IFSM TVJ = 45°C, t = 10 ms 75 A
TVJ = 150°C,t = 10 ms 60 A
Ptot TH= 25°C40W
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz t = 1 min 3000 V~
IISOL £ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2-2.5 Nm
(10-32 unf) 18-22 lb.in.
Weight typ. 35 g
Features
●Soldering connections for PCB
mounting
●Isolation voltage 3600 V~
●Ultrafast freewheeling diode
●Convenient package outline
●UL registered E 72873
●Thermistor
Applications
●Drive Inverters with brake system
Advantages
●2 functions in one package
●No external isolation neccessary
●Easy to mount with two screws
●Suitable for wave soldering
●High temperature and power cycling
capability
Dimensions in mm (1 mm = 0.0394")
VUB 71
749
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
VRRM = 1200-1600 V
IdAVM = 70 A
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
1245
67910
© 2000 IXYS All rights reserved 2 - 2
VUB 71
IRVR= VRRM,T
VJ =25°C 0.2 mA
VR= 800 V, TVJ =150°C46mA
VFIF= 12 A, TVJ =25°C 2.7 V
VT0 For power-loss calculations only 1.65 V
rTTVJ = 150°C46mW
IRM IF= 25 A, -di F/dt = 100 A/ms 6.5 7 A
VR= 100 V
trr IF= 1 A, -diF/dt = 100 A/ms5070ns
VR= 30 V
RthJH 3.12 K/W
R25 Siemens Typ S 891/2,2k/+9 2,2 kW
dSCreep distance on surface 12.7 mm
dAStrike distance in air 9.4 mm
aMaximum allowable acceleration 50 m/s2
Symbol Test Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
Rectifier Diodes
VBR(CES) VGS = 0 V, IC = 3 mA 1200 V
VGE(th) IC = 10 mA 5 8 V
IGES VGE = ± 20 V 500 nA
ICES TVJ = 25°C, VCE = VCES 700 mA
TVJ = 125°C, VCE = 0.8 V CES 1.5 mA
VCEsat VGE = 15 V, IC = 25 A 2.9 V
tSC VGE = 15 V, VCE = 600 V, TVJ = 125°C, 10 ms
(SCSOA) RG = 22 W, non repetitive
RBSOA VGE = 15 V, VCE = 800 V, TVJ = 125°C, 50 A
RG = 22 W, Clamped Inductive load, L = 100 mH
Cies VCE = 25 V, f = 1 MHz, VGE = 0 V 4.5 nF
td(on) 300 ns
td(off) 350 ns
tfi 1600 ns
Eon 6mJ
Eoff 8mJ
RthJH 0.8 K/W
IRVR = VRRM,T
VJ =25°C 0.1 mA
VR = VRRM,T
VJ = 150°C3mA
VFIF = 25 A, TVJ =25°C 1.3 V
VT0 For power-loss calculations only 0.85 V
rTTVJ = 150°C 8.5 mW
RthJH per diode 1.42 K/W
Rectifier Diodes
Fast Recovery Diode
VCE = 600 V, IC = 25 A
VGE = 15 V, RG = 22 W
Inductive load; L = 100 mH
TVJ = 125°C
IGBT
Module NTC
749
