TF252TH - Sanyo Semiconductor

TF252TH

No. A0842-1/4

SANYO Semiconductors

DATA SHEET

Features

•High gain : GV=1.0dB typ (VCC=2V, R L=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz).

•Ultrasmall package facilitates miniaturization in end products.

•Best suited for use in Electret Condenser Microphone for audio equipments and telephones.

•Excellent voltage characteristics.

•Excellent transient characteristics.

•Adoption of FBET process.

•Halogen free compliance.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Gate-to-Drain Voltage VGDO --20 V

Gate Current IG10 mA

Drain Current ID1mA

Allowable Power Dissipation PD100 mW

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Marking: D

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENA0842

70407GB TI IM TC-00000796

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

s products or

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

TF252TH N-channel Silicon Junction FET

Electret Condenser Microphone

Applications

TF252TH

No. A0842-2/4

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Gate-to-Drain Breakdown Voltage V(BR)GDO IG=--100µA--20 V

Cutoff Voltage VGS(off) VDS=2V, ID=1µA--0.1 --0.4 --1.0 V

Zero-Gate Voltage Drain Current IDSS VDS=2V, VGS=0V 140* 350* µA

Forward T ransfer Admittance yfsVDS=2V, VGS=0V, f=1kHz 0.8 1.4 mS

Input Capacitance Ciss VDS=2V, VGS=0V, f=1MHz 3.1 pF

Reverse Transfer Capacitance Crss VDS=2V, VGS=0V, f=1MHz 0.95 pF

[Ta=25°C, VCC=2V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]

Voltage Gain GVVIN=10mV, f=1kHz 1.0 dB

Reduced Voltage Characteristic ∆GVV VIN=10mV, f=1kHz, VCC=2.0→1.5V --0.6 --2.0 dB

Frequency Characteristic ∆Gvf f=1kHz to 110Hz --1.0 dB

Total Harmonic Distortion THD VIN=30mV, f=1kHz 0.65 %

Output Noise Voltage VNO VIN=0V, A curve --106 --102 dB

* : The TF252TH is classified by IDSS as follows : (unit : µA)

Rank 45

IDSS 140 to 240 210 to 350

Package Dimensions Test Circuit

unit : mm (typ)

7031-001

ID -- VDS ID -- VDS

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- µA

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- µA

0 0.5 2.01.0 1.5

300

200

250

100

150

IT12440

VGS=0V

--0.10V

--0.15V

--0.05V

--0.20V

--0.30V

--0.25V

IT12441

01 5234

350

300

200

250

100

150

VGS=0V

--0.1V

--0.2V

--0.4V

--0.3V

OSC

5pF +

33µF

2.2kΩVCC=2V

VCC=1.5V

VTVM

THD

Voltage gain

Frequency Characteristic

Distortion

Reduced Voltage Characteristic

Top View

Bottom View

0.45

1.4

0.8

1.2

0.2

0.34

0.07

0.25

0.2 0.1

1 : Drain

2 : Source

3 : Gate

SANYO : VTFP

TF252TH

No. A0842-3/4

GV -- IDSS ∆GVV -- IDSS

VGS(off) -- IDSS

yfs -- IDSS

Ciss -- VDS Crss -- VDS

Zero-Gate Voltage Drain Current, IDSS -- µA

Forward T ransfer Admittance, 

fs -- mS

Zero-Gate Voltage Drain Current, IDSS -- µA

Cutoff Voltage, VGS(off) -- V

Drain-to-Source Voltage, VDS -- V

Input Capacitance, Ciss -- pF

Drain-to-Source Voltage, VDS -- V

Zero-Gate Voltage Drain Current, IDSS -- µA

Voltage Gain, GV -- dB

Zero-Gate Voltage Drain Current, IDSS -- µA

Reduced Voltage Characteristic, ∆GVV -- dB

ID -- VGS

Gate-to-Source Voltage, VGS -- V

Drain Current, ID -- µA

Gate-to-Source Voltage, VGS -- V

Drain Current, ID -- µA

IT12448

--1.0

--0.8

--0.6

--0.4

--0.2

--0.9

--0.7

--0.5

--0.3

--0.4

--0.2

0.4

0.8

1.2

0.2

0.6

1.0

1.8

1.6

1.4

--0.20

--0.25

--0.30

--0.35

--0.40

--0.55

--0.50

--0.45

--0.60

100 150 200 250 300 400350

IT12449

100 150 200 250 300 400350

VDS=2V

ID=1µA

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

100 150 200 250 300 400350

IT12444

100 150 200 250 300 400350

IT12445

VDS=2V

VGS=0V

f=1kHz

1.0 1.0 10

23 577523

IT12446

VGS=0V

f=1MHz

IT12447

1.0

1.0 10

23 577523

VGS=0V

f=1MHz

GV : VCC=2V

VIN=10mV

f=1kHz

RL=2.2kΩ

Cin=5pF

IDSS : VDS=2V

400

300

200

100

IT12442 IT12443

--0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0

IDSS=350µA

250µA

150µA

350

250

150

VDS=2V

400

300

200

100

--0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0

Ta=

75°C

--25°C

350

250

150

VDS=2V

∆GVV : VCC=2V→1.5V

VIN=10mV

f=1kHz

RL=2.2kΩ

Cin=5pF

IDSS : VDS=2V

Reverse Transfer Capacitance, Crss -- pF

TF252TH

No. A0842-4/4

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.

products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or

malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise

to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt

safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not

limited to protective circuits and error prevention circuits for safe design, redundant design, and structural

design.

Upon using the technical information or products described herein, neither warranty nor license shall be granted

with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third

party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's

intellctual property rights which has resulted from the use of the technical information and products mentioned

above.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are

controlled under any of applicable local export control laws and regulations, such products may require the

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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

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without the prior written consent of SANYO Semiconductor Co.,Ltd.

PD -- Ta

Ambient Temperature, Ta -- °C

Allowable Power Dissipation, PD -- mW

THD -- VIN

Input Voltage, VIN -- mV

Total Harmonic Distortion, THD -- %

THD -- IDSS

Zero-Gate Voltage Drain Current, IDSS -- µA

Total Harmonic Distortion, THD -- %

1.0

0.1 050100 150 200

IT12450

100 150 200 250 300 400350

250

350

IDSS=150µA

IT12451

0.2

0.4

0.6

1.0

0.8

1.2

1.4

THD : VCC=2V

VIN=30mV

f=1kHz

RL=2.2kΩ

Cin=5pF

IDSS : VDS=2V

THD : VCC=2V

f=1kHz

RL=2.2kΩ

Cin=5pF

IDSS : VDS=2V

100

120

0020406080100 120 140 160

IT12453

This catalog provides information as of July, 2007. Specifications and information herein are subject

to change without notice.