MCR100-3 ... MCR100-8 G K A TO-92 Plastic Package Weight approx. 0.18g MAXIMUM RATINGS (TJ=25C unless otherwise noted.) Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage, Note 1 MCR100-3 (TJ=25 to 125C, RGK=1K) MCR100-4 VDRM 200 MCR100-5 and 300 MCR100-6 VRRM 400 100 MCR100-7 500 MCR100-8 600 Forward Current RMS Volts IT(RMS) 0.8 Amps ITSM 10 Amps It 2 0.415 As PGM 0.1 Watts PGF(AV) 0.01 Watt IGFM 1 Amp VGRM 5 Volts Operating Junction Temperature Range @ Rated VRRM and VDRM TJ -40 to +125 C Storage Temperature Range Ts -40 to +150 C (All Conduction Angles) Peak Forward Surge Current, TA=25C (1/2 Cycle, Sine Wave, 60Hz) Circuit Fusing (t=8.3ms) Peak Gate Power - Forward, TA=25C Average Gate Power - Forward, TA=25C Peak Gate Current - Forward, TA=25C (300s,120PPS) Peak Gate Voltage - Reverse 2 Note 1. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. GSP FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) (R) Dated : 06/12/2003 MCR100-3 ... MCR100-8 CHARACTERISTICS (TC=25C, RGK=1K unless otherwise noted.) Characteristic Symbol Peak Forward or Reverse Blocking Current Min Max Unit - 10 A VTM - 1.7 Volts IGT - 200 A VGT - 0.8 Volts IH - 5 mA IDRM,IRRM (VAK=Rated VDRM or VRRM) Forward "On" Voltage (ITM=1A Peak @TA=25C) Gate Trigger Current(Continuous dc),Note 1 (Anode Voltage=7Vdc,RL=100 Ohms) Gate Trigger Voltage(Continuous dc) (Anode Voltage=7Vdc,RL=100 Ohms) (Anode Voltage=Rated VDRM,RL=100 Ohms) Holding Current (Anode Voltage=7Vdc,initiating current=20mA) Note 1. RGK current is not included in measurement. GSP FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) (R) Dated : 06/12/2003 MCR100-3 ... MCR100-8 Gate Trigger Voltage (volts) Gate Trigger Current (A) 100 90 80 70 60 50 40 30 20 10 -25 -40 5 -10 20 35 50 65 80 95 110 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 50 65 80 95 110 Figure 2. Typical Gate Trigger Voltage Versus Junction Temperature Latching Current (A) Holding Current (A) 35 1000 1000 100 -40 -25 -10 5 20 35 50 65 80 95 110 100 10 -40 -25 -10 5 20 35 50 65 80 95 110 TJ, Junction Temperature ( C) Figure 4. Typical Latching Curent Versus Junction Temperature TJ, Junction Temperature ( C) Figure 3. Typical Holding Curent Versus Junction Temperature TC, Maximum Allowable Case Temperature ( C) 20 TJ, Junction Temperature ( C) TJ, Junction Temperature ( C) Figure 1. Typical Gate Trigger Curent Versus Junction Temperature 10 5 -10 10 110 100 90 DC 80 180 C 70 60 50 40 0 0.1 30 C 0.2 60 C 0.3 90 C 0.4 IT,Instantaneous On-State Current (AMPS) 120 MAXIMUM @ TJ=25 C MAXIMUM @ TJ=110 C 1 0.1 0.5 IT(RMS), RMS On-State Current (AMPS) Figure 5. Typical RMS Current Derating 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 VT, Instantaneous On-State Voltage (volts) Figure 6. Typical On-State Characteristics SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) (R) Dated : 06/12/2003