DMT10H010LSS-13 - DIODES INC

DMT10H010LSS

Document number: DS38035 Rev. 5 - 2

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March 2016

DMT10H010LSS

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100V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BVDSS

RDS(ON) Max

TC = +25°C

100V

9.5mΩ @ VGS = 10V

29.5A

Description and Applications

This new generation N-Channel Enhancement Mode MOSFET is

designed to minimize RDS(ON) and yet maintain superior switching

performance. This device is ideal for use in Notebook battery power

management and Loadswitch.

 Backlighting

 Power Management Functions

 DC-DC Converters

Features and Benefits

 100% Unclamped Inductive Switch (UIS) Test in Production

 High Conversion Efficiency

 Low RDS(ON) – Minimizes On State Losses

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See Diagram

 Terminals: Finish  Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMT10H010LSS-13

SO-8

2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SO-8

Top View

Internal Schematic

Top View

Equivalent circuit

= Manufacturer’s Marking

T1010LS = Product Type Marking Code

YYWW = Date Code Marking

YY or YY = Year (ex: 15 = 2015)

WW = Week (01 to 53)

1 4

8 5

T1010LS

YY WW

DMT10H010LSS

Document number: DS38035 Rev. 5 - 2

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March 2016

DMT10H010LSS

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Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6), VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

11.5

9.2

Steady

State

TC = +25°C

TC = +100°C

29.5

18.6

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)

IDM

Maximum Continuous Body Diode Forward Current (Note 6)

Avalanche Current (Note 8), L=0.3mH

IAS

Avalanche Energy (Note 8), L=0.3mH

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power (Note 5)

1.4

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

°C/W

t<10s

48.8

Total Power Dissipation (Note 6)

1.9

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

°C/W

t<10s

35.8

Thermal Resistance, Junction to Case (Note 6)

RJC

10.1

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

100

—

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

µA

VDS = 80V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1.4

1.9

2.8

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

9.5

mΩ

VGS = 10V, ID = 13A

—

VGS = 6V, ID = 13A

—

14.5

VGS = 4.5V, ID = 5A

Diode Forward Voltage

VSD

—

0.8

1.3

VGS = 0V, IS = 13A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

2592

—

VDS = 50V, VGS = 0V

f = 1MHz

Output Capacitance

Coss

—

792

—

Reverse Transfer Capacitance

Crss

—

Gate Resistance

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

—

53.7

—

nC

VDD = 50V, ID = 13A,

VGS = 10V

Gate-Source Charge

Qgs

—

10.6

—

Gate-Drain Charge

Qgd

—

8.2

—

Turn-On Delay Time

tD(ON)

—

11.6

—

VDD = 50V, VGS = 10V,

ID = 13A, Rg = 6Ω

Turn-On Rise Time

—

14.1

—

Turn-Off Delay Time

tD(OFF)

—

42.9

—

Turn-Off Fall Time

—

Reverse Recovery Time

tRR

—

49.8

—

IF = 13A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

85.1

—

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

DMT10H010LSS

Document number: DS38035 Rev. 5 - 2

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March 2016

DMT10H010LSS

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0.0

5.0

10.0

15.0

20.0

25.0

30.0

0 0.5 1 1.5 2 2.5 3

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

VGS=3.0V

VGS=3.5V

VGS=4.0V

VGS=4.5V

VGS=5.0V

VGS=6.0V

VGS=10.0V

1 2 3 4 5 6

ID, DRAIN CURRENT (A)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

VDS=5V

-55℃

25℃

85℃

125℃

150℃

175℃

0.004

0.005

0.006

0.007

0.008

0.009

0.01

0.011

0.012

0 2 4 6 8 10 12 14 16 18 20

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

ID, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

VGS = 10V

VGS = 4.5V

VGS = 6V

0.01

0.02

0.03

0.04

0.05

0246810 12 14 16 18 20

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

ID = 5A

ID = 13A

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

0.018

0.02

0 2 4 6 8 10 12 14 16 18 20

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

ID, DRAIN CURRENT (A)

Figure 5. Typical On-Resistance vs. Drain Current and

Temperature

-55℃

25℃

85℃

150℃

125℃

VGS = 10V

0.5

1.5

2.5

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

TJ, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Temperature

VGS = 6V, ID = 13A

VGS = 4.5V, ID = 5A

VGS = 10V, ID = 13A

DMT10H010LSS

Document number: DS38035 Rev. 5 - 2

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March 2016

DMT10H010LSS

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0.5

1.5

2.5

3.5

-50 -25 025 50 75 100 125 150 175

VGS(TH), GATE THRESHOLD VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

ID=250μA

ID=1mA

0 0.3 0.6 0.9 1.2 1.5

IS, SOURCE CURRENT (A)

VSD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs Current

VGS=0V, TJ=-55℃

VGS=0V, TJ=25℃

VGS=0V, TJ=85℃

VGS=0V, TJ=175℃

VGS=0V, TJ=150℃

VGS=0V, TJ=125℃

0.001

0.01

0.1

100

0.01 0.1 1 10 100 1000

I , DRAIN CURRENT (A)

V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

T = 150°C

J(max)

T = 25°C

V = 10V

Single Pulse

DUT on 1 * MRP Board

RDS(on)

Limited

P = 10s

P = 1s

WP = 100ms

P = 10ms

WP = 1ms

P = 100µs

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

0.018

0.02

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

TJ, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Temperature

VGS = 6V, ID = 13A

VGS = 4.5V, ID = 5A

VGS = 10V, ID = 13A

100

1000

10000

0 5 10 15 20 25 30 35 40 45 50

CT, JUNCTION CAPACITANCE (pF)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

f=1MHz

Crss

Coss

Ciss

0 5 10 15 20 25 30 35 40 45 50 55

Vgs (V)

Qg - (nC)

Figure 11. Gate Charge

VDS = 50V, ID= 13A

DMT10H010LSS

Document number: DS38035 Rev. 5 - 2

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March 2016

DMT10H010LSS

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Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SO-8

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SO-8

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

R (t) = r(t) * R

 JA JA

R = 90°C/W

JA

Duty Cycle, D = t1/ t2

D = 0.5

D = 0.7

D = 0.9

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

SO-8

Dim

Min

Max

1.75

0.10

0.20

1.30

1.50

0.15

0.25

0.3

0.5

4.85

4.95

5.90

6.10

3.85

3.95

1.27 Typ

0.35

0.62

0.82



0

8

All Dimensions in mm

Dimensions

Value (in mm)

0.60

1.55

5.4

1.27

DMT10H010LSS

Document number: DS38035 Rev. 5 - 2

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March 2016

DMT10H010LSS

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IMPORTANT NOTICE

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.