• Epitaxial Planar Die Construction
• Complementary PNP Types Available (MMBTA55/MMBTA56)
• Ideal for Medium Power Amplification and Switching.
VCEO Collector-Emitter Voltage
MMBTA05
MMBTA06 60
80 V
VCBO Collector-Base Voltage
MMBTA05
MMBTA06 60
80 V
VEBO Emitter-Base Voltage 4.0 V
ICCollector Current-Continuous 500 mA
PDPower Dissipation* 300 mW
RθJA Thermal Resistance, Junction to Ambient 357 K/W
TJ Operating Junction Temperature -55 to +150 к
TSTG Storage Temperature -55 to +150 к
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
MMBTA05
MMBTA06 60
80 ---
---
Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100µAdc, IC=0) 4.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=60Vdc, IE=0) MMBTA05
(VCB=80Vdc, IE=0) MMBTA06 ---
--- 0.1
0.1 µAdc
µAdc
ICES Emitter Cutoff Current
(VCE=60Vdc, IB=0) MMBTA05
(VCE=80Vdc, IB=0) MMBTA06 ---
--- 0.1
0.1 µAdc
µAdc
ON CHARACTERISTICS
hFE DC Current Gain
(VCE=1.0Vdc, IC=10mAdc)
(VCE=1.0Vdc, IC=100mAdc) 100
100 ---
---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc) --- 0.25 Vdc
VBE(on) Base-Emitter On Voltage
(IC=100mAdc, IB=10mAdc) --- 1.2 Vdc
fTCurrent-Gain—Bandwidth Product
(IC=10mAdc, VCE=2.0Vdc, f=100MHz) 100 --- MHz
* Valid provided that terminals are kept at ambient temperature..
Suggested Solder
Pad Layout
DIMENSIONS
RoHS Compliant. See ordering information)