DG613EEY-T1-GE4 - VISHAY - Datasheet.Live

DG611E, DG612E, DG613E

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1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DESCRIPTION

The DG611E, DG612E, and DG613E contain four

independently selectable SPST switches. They offer

improved performance over the industry standard DG611

and DG611A series. The DG611E and DG612E have all

switches normally closed and normally open respectively,

while the DG613E has 2 normally open and 2 normally

closed switches.

They are designed to operate from a 3 V to 16 V single

supply or from ± 3 V to ± 8 V dual supplies and are fully

specified at +3 V, +5 V and ± 5 V. All control logic inputs

have guaranteed 2 V logic high limits when operating from

+5 V or ± 5 V supplies and 1.4 V when operating from a

+3 V supply.

The DG611E, DG612E, and DG613E switches conduct

equally well in both directions and offer rail to rail analog

signal handling.

1.4 pC low charge injection, coupled with very low switch

capacitance: 3 pF, fast switching speed: ton/toff 23 ns/14 ns

and excellent 3 dB bandwidth: 1 GHz, make these products

ideal for precision instrumentation, high-end data

acquisition, automated test equipment and high speed

communication applications.

Operation temperature is specified from -40 °C to +125 °C.

The DG611E, DG612E, and DG613E are available in 16 lead

SOIC, TSSOP and the space saving 1.8 mm x 2.6 mm

miniQFN packages.

FEATURES

• 3 V to 16 V single supply or ± 3 V to ± 8 V dual

supply

• Low charge injection (1.4 pC typ.)

• Leakage current < 0.25 nA at 85 °C

• Low switch capacitance (Csoff 3 pF typ.)

• Fully specified with single supply operation at

3 V, 5 V, and dual supplies at ± 5 V

• Low voltage, 2.5 V CMOS/TTL compatible

• 1 GHz, 3 dB bandwidth

• Excellent isolation performance (-59 dB at 10 MHz)

• Excellent crosstalk performance (-74 dB at 10 MHz)

•

Fully specified from -40 °C to +85 °C and -40 °C to +125 °C

• 16 lead SOIC, TSSOP and miniQFN package

(1.8 mm x 2.6 mm)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Precision instrumentation

• Medical instrumentation

• Automated test equipment

• High speed communications applications

• High-end data acquisition

• Sample and hold applications

• Sample and hold systems

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

TRUTH TABLE

LOGIC DG611E DG612E

0OnOff

1OffOn

DG611E

SOIC/TSSOP

Top View

V+

IN3D3

D4IN4

IN2D2

D1IN1

V-

GND

568

16 15 14 13

Top View

IN1IN2

D1D2

S1S2

V- V+

GND NC

S4S3

D4D3

IN4IN3

DG611E

miniQFN

Pin 1

Device Marking: Txx for DG611E

(miniQFN16) Uxx for DG612E

Vxx for DG613E

xx = Date/Lot Traceability Code

Txx

DG611E, DG612E, DG613E

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FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

Note

a. -40 °C to +85 °C datasheet limits apply

TRUTH TABLE

LOGIC SW1, SW4 SW2, SW3

0OffOn

1OnOff

ORDERING INFORMATION

TEMP. RANGE PACKAGE PART NUMBER

-40 °C to +125 °C a

16-pin TSSOP

DG611EEQ-T1-GE4

DG612EEQ-T1-GE4

DG613EEQ-T1-GE4

16-pin narrow SOIC

DG611EEY-T1-GE4

DG612EEY-T1-GE4

DG613EEY-T1-GE4

16-pin miniQFN

DG611EEN-T1-GE4

DG612EEN-T1-GE4

DG613EEN-T1-GE4

Top V i ew

IN1IN2

D1D2

S1S2

+V-V

CNDNG

S4S3

D4D3

IN4IN3Top V i e w

V+

IN3D3

D4IN4

IN2D2

D1IN1

V-

GND

568

16 15 14 13

DG613E

SOIC/TSSOP

DG613E

miniQFN

Pin 1

Device Marking: Vxx for DG613E

(miniQFN16)

Vxx

DG611E, DG612E, DG613E

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Notes

a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings

b. All leads welded or soldered to PC board

c. Derate 5.6 mW/°C above 70 °C

d. Derate 6.6 mW/°C above 70 °C

e. Derate 8 mW/°C above 70 °C

f. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead

terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip

cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER LIMIT UNIT

V+ to V- -0.3 to +18

GND to V- 18

VS, VD(V-) - 0.3 to (V+) + 0.3

or 30 mA, whichever occurs first

Digital inputs a(GND) - 0.3 to 18

Continuous current (any terminal) 30 mA

Peak current, S or D (pulsed 1 ms, 10 % duty cycle) 100

Storage temperature -65 to +150 °C

Power dissipation (package) b

16-pin TSSOP c450

mW16-pin miniQFN d525

16-pin narrow SOIC e640

Thermal resistance (package) b

16-pin TSSOP 178

°C/W16-pin miniQFN 152

16-pin narrow SOIC 125

ESD / HBM EIA / JESD22-A114-A 2K V

ESD / CDM EIA / JESD22-C101-A 1K

Latch up JESD78 300 mA

DG611E, DG612E, DG613E

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SPECIFICATIONS FOR DUAL SUPPLIES (V+ = +5 V, V- = -5 V)

PARAMETER SYMBOL

TEST CONDITIONS

UNLESS OTHERWISE SPECIFIED

V + = +5 V, V - = - 5 V

VIN = 2 V, 0.8 V a

TEMP. b

LIMITS

UNIT

TYP. c-40 °C to +125 °C -40 °C to +85 °C

MIN. dMAX. dMIN. dMAX. d

Analog Switch

Analog signal range eVANALOG Full - - 5 5 - 5 5 V

Drain-source

on-resistance RDS(on) IS = 1 mA, VD = -3 V, 0 V, +3 V Room 72 - 115 - 115



Full - - 160 - 140

On-resistance match RDS(on) IS = 1 mA, VD = ± 3 V Room 0.6 - 2.5 - 2.5

Full - - 5 - 4.5

On-resistance flatness Rflat(on) IS = 1 mA, VD = -3 V, 0 V, +3 V Room 15 - 20 - 20

Full - - 30 - 25

Switch off

leakage current

IS(off) V+ = 5.5 V, V- = -5.5 V

VD = +4.5 V / -4.5 V

VS = -4.5 V / +4.5 V

Room ±

0.0005 -0.1 0.1 -0.1 0.1

Full - -2 2 -0.25 0.25

ID(off)

Room ± 0.006 -0.1 0.1 -0.1 0.1

Full - -2 2 -0.25 0.25

Switch on 

leakage current ID(on) V+ = 5.5 V, V- = -5.5 V

VD = VS = ± 4.5 V

Room ± 0.008 -0.1 0.1 -0.1 0.1

Full - -6 6 -0.25 0.25

Digital Control

Input current, VIN low IIL VIN under test = 0.8 V Full 0.01 -0.1 0.1 -0.1 0.1 μA

Input current, VIN high IIH VIN under test = 2 V Full 0.01 -0.1 0.1 -0.1 0.1

Input capacitance eCIN f = 1 MHz Room 3 - - - - pF

Dynamic Characteristics

Turn-on time tON RL = 300 , CL = 35 pF

VS = ± 3 V

Room 23 - 50 - 50

Full - - 75 - 60

Turn-off time tOFF

Room 14 - 35 - 35

Full - - 50 - 45

Break-before-make 

time delay tBBM DG613E only, VS = 3 V

RL = 300 , CL = 35 pF

Room 15 - - - -

Full - 2 - 2 -

Charge injection eQINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room 1.4 - - - - pC

Off isolation eOIRR RL = 50 , CL = 5 pF

f = 10 MHz

Room -59 - - - -

Channel-to-channel

crosstalk eXTALK Room -74 - - - -

Bandwidth eBW RL = 50 , CL = 5 pF Room 1 - - - - GHz

Source off

capacitance eCS(off)

f = 1 MHz; VS = 0 V

Room 3 - - - -

Drain off

capacitance eCD(off) Room 3 - - - -

Drain on

capacitance eCD(on) f = 1 MHz; VS = VD = 0 V Room 7 - - - -

Total harmonic

distortion eTHD Signal = 1 VRMS, 20 Hz to 20 kHz,

RL = 600 Room 0.13 - - - - %

Power Supplies

Power supply current I+

V+ = +5 V, V- = -5 V

VIN = 0 V or 5 V

Room 0.001 - 0.1 - 0.1

μA

Full - - 1 - 1

Negative supply

current I- Room -0.001 -0.1 - -0.1 -

Full - -1 - -1 -

Ground current IGND

Room -0.001 -0.1 - -0.1 -

Full - -1 - -1 -

DG611E, DG612E, DG613E

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SPECIFICATIONS FOR SINGLE SUPPLIES (V+ = +5 V, V- = 0 V)

PARAMETER SYMBOL

TEST CONDITIONS

UNLESS OTHERWISE SPECIFIED

V+ = +5 V, V- = 0 V

VIN = 2 V, 0.8 V a

TEMP.b

LIMITS

UNIT

TYP.C -40 °C to +125 °C -40 °C to +85 °C

MIN. dMAX. dMIN. dMAX. d

Analog Switch

Analog signal range eVANALOG Full - 0 5 0 5 V

Drain-source

on-resistance RDS(on) V+ = 5 V, V- = 0 V

IS = 1 mA, VD = +3.5 V

Room 130 - 170 - 170



Full - - 235 - 215

On-resistance match RDS(on) V+ = 5 V, V- = 0 V,

IS = 1 mA, VD = 3.5 V

Room 0.6 - 5 - 5

Full - - 12 - 10

On-resistance flatness Rflat(on) V+ = 5 V, V- = 0 V,

IS = 1 mA, VD = 0 V, 3.5 V

Room 29 - 50 - 50

Full - - 100 - 90

Switch off 

leakage current

IS(off) V+ = 5.5 V, V- = 0 V

VD = 4.5 V / 1 V

VS = 1 V / 4.5 V

Room ±

0.0005 -0.1 0.1 -0.1 0.1

Full - -2 2 -0.25 0.25

ID(off)

Room ± 0.006 -0.1 0.1 -0.1 0.1

Full - -2 2 -0.25 0.25

Switch on 

leakage current ID(on) V+ = 5.5 V, V- = 0 V

VD = VS = 1 V / 4.5 V

Room ± 0.008 -0.1 0.1 -0.1 0.1

Full - -6 6 -0.25 0.25

Digital Control

Input current, VIN low IIL VIN under test = 0.8 V Full 0.01 -0.1 0.1 -0.1 0.1 μA

Input current, VIN high IIH VIN under test = 2 V Full 0.01 -0.1 0.1 -0.1 0.1

Input capacitance eCIN f = 1 MHz Room 4 - - - - pF

Dynamic Characteristics

Turn-on time etON RL = 300 , CL = 35 pF

VS = 3 V

Room 33 - 60 - 60

Full - - 90 - 80

Turn-off time etOFF

Room 14 - 35 - 35

Full - - 45 - 40

Break-before-make 

time delay etBBM DG613E only, VS = 3 V

RL = 300 , CL = 35 pF

Room 19 - - - -

Full - 2 - 2 -

Charge injection eQINJ Vg = 0 V, Rg = 0 , CL = 1 nF Full 1.5 - - - - pC

Off isolation eOIRR RL = 50 , CL = 5 pF

f = 10 MHz

Room -59 - - - -

Channel-to-channel

crosstalk eXTALK Room -70 - - - -

Bandwidth eBW RL = 50 , CL = 5 pF Room 880 - - - - MHz

Source off

capacitance eCS(off) f = 1 MHz; VS = 0 V Room 3 - - - -

Drain off capacitance eCD(off) Room 3 - - - -

Drain on capacitance eCD(on) f = 1 MHz; VS = VD = 0 V Room 7 - - - -

Power Supplies

Power supply current I+

VIN = 0 V or 5 V

Room 0.001 - 0.1 - 0.1

μA

Full - - 1 - 1

Negative supply

current I- Room -0.001 -0.1 - -0.1 -

Full - -1 - -1 -

Ground current IGND

Room -0.001 -0.1 - -0.1 -

Full - -1 - -1 -

DG611E, DG612E, DG613E

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Notes

a. VIN = input voltage to perform proper function

b. Room = 25 °C, Full = as determined by the operating temperature suffix

c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing

d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet

e. Guaranteed by design, not subject to production test



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS FOR SINGLE SUPPLIES (V+ = +3 V, V- = 0 V)

PARAMETER SYMBOL

TEST CONDITIONS

UNLESS OTHERWISE SPECIFIED

V + = +3 V, V - = - 0 V

VIN = 1.4 V, 0.6 V a

TEMP. b

LIMITS

UNIT

TYP. c-40 °C to +125 °C -40 °C to +85 °C

MIN. dMAX. dMIN. dMAX. d

Analog Switch

Analog signal range eVANALOG Full - 0 3 0 3 V

Drain source

On-resistance RDS(on) IS = 1 mA, VD = +1.5 V Room 305 - 420 - 420 

Full - - 600 - 500

Switch off

leakage current

IS(off) V+ = 3.3 V, V- = 0 V

VD = 3 V / 0.3 V

VS = 0.3 V / 3 V

Room ±

0.0005 -0.1 0.1 -0.1 0.1

Full - -2 2 -0.25 0.25

ID(off)

Room ± 0.006 -0.1 0.1 -0.1 0.1

Full - -2 2 -0.25 0.25

Switch on

leakage current ID(on) V+ = 3.3 V, V- = 0 V

VD = VS = 0.3 V / 3 V

Room ± 0.008 -0.1 0.1 -0.1 0.1

Full - -6 6 -0.25 0.25

Digital Control

Input current, VIN low IIL VIN under test = 0.6 V Full 0.01 -0.1 0.1 -0.1 0.1 μA

Input current, VIN high IIH VIN under test = 1.4 V Full 0.01 -0.1 0.1 -0.1 0.1

Input capacitance eCIN f = 1 MHz Room 4 - - - - pF

Dynamic Characteristics

Turn-on time tON RL = 300 , CL = 35 pF

VS = 2 V

Room 76 - 115 - 115

Full - - 180 - 155

Turn-off time tOFF

Room 31 - 58 - 58

Full - - 65 - 60

Break-before-make 

time delay tBBM DG613 only, VS = 2 V

RL = 300 , CL = 35 pF

Room 60 - - - -

Full - 10 - 10 -

Charge injection eQINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room 1.4 - - - - pC

Off isolation eOIRR RL = 50 , CL = 5 pF

f = 10 MHz

Room -59 - - - -

Channel-to-channel

crosstalk eXTALK Room -71 - - - -

Bandwidth eBW RL = 50 , CL = 5 pF Room 830 - - - - MHz

Source off capacitance eCS(off) f = 1 MHz; VS = 0 V Room 3 - - - -

pFDrain off capacitance eCD(off) Room 4 - - - -

Drain on capacitance eCD(on) f = 1 MHz; VS = VD = 0 V Room 7 - - - -

Power Supplies

Power supply current I+

VIN = 0 V or 3 V

Room 0.001 - 0.1 - 0.1

μA

Full - - 1 - 1

Negative supply

current I- Room -0.001 -0.1 - -0.1 -

Full - -1 - -1 -

Ground current IGND

Room -0.001 -0.1 - -0.1 -

Full - -1 - -1 -

DG611E, DG612E, DG613E

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

On-Resistance vs. VD (Dual Supply)

On-Resistance vs. Temperature (Dual Supply)

On-Resistance vs. Temperature (Single Supply)

On-Resistance vs. VD (Single Supply)

On-Resistance vs. Temperature (Single Supply)

Charge Injection vs. Analog Voltage

100

1000

10000

100

-7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7

Axis Title

1st line

2nd line

RON - On-Resistance (Ω)

VD- Analog Voltage (V)

2nd line

V±=±5 V

V±=±6.2 V

IS= 1 mA

100

1000

10000

100

110

120

130

140

150

-5-4-3-2-1012345

Axis Title

1st line

2nd line

RON - On-Resistance (Ω)

VD- Analog Voltage (V)

2nd line

+125 °C

+85 °C

+25 °C

-40 °C

V±=±5 V

IS= 1 mA

100

1000

10000

100

120

140

160

180

200

220

240

260

280

300

320

340

360

380

400

0123

Axis Title

1st line

2nd line

RON - On-Resistance (Ω)

VD- Analog Voltage (V)

2nd line

+125 °C

+85 °C

+25 °C

-40 °C

V+=+3 V

IS= 1 mA

100

1000

10000

100

150

200

250

300

350

400

01234567891011121314

Axis Title

1st line

2nd line

RON - On-Resistance (Ω)

VD- Analog Voltage (V)

2nd line

V+ = +3 V

V+ = +5 V

V+ = +13.2 V

IS= 1 mA

100

1000

10000

110

130

150

170

190

210

230

250

012345

Axis Title

1st line

2nd line

RON - On-Resistance (Ω)

VD- Analog Voltage (V)

2nd line

+125 °C

+85 °C

+25 °C

-40 °C

V+=+5 V

IS= 1 mA

100

1000

10000

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-6-5-4-3-2-10123456

Axis Title

1st line

2nd line

QINJ - Charge Injection (pC)

VS- Analog Voltage (V)

2nd line

V± = ± 5 V

V+ = +5 V

V+ = +3 V

CL=1 nF

DG611E, DG612E, DG613E

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Leakage Current vs. Temperature

Supply Current vs. Temperature

Leakage Current vs. Temperature

Switching Time vs. Temperature

Supply Current vs. Temperature

100

1000

10000

-500

-400

-300

-200

-100

100

200

300

400

500

-40-200 20406080100120

Axis Title

1st line

2nd line

Leakage Current (pA)

Temperature (°C)

2nd line

ID(OFF),V

D= 3 V, VS= 0.3 V

ID(ON),V

D= 3 V

IS(OFF),V

D= 0.3 V, VS= 3 V

IS(OFF),V

D= 3 V, VS= 0.3 V

ID(ON),V

D= 0.3 V

ID(OFF),V

D= 0.3 V, VS= 3 V

V+ = +3.3 V

100

1000

10000

-500

-400

-300

-200

-100

100

200

300

400

500

-40-200 20406080100120

Axis Title

1st line

2nd line

Leakage Current (pA)

Temperature (°C)

2nd line

ID(OFF),V

D= 4.5 V, VS= 1 V

ID(ON),V

D= 4.5 V

IS(OFF),V

D= 1 V, VS= 4.5 V

IS(OFF),V

D= 4.5 V, VS= 1 V

ID(ON),V

D= 1 V

ID(OFF),V

D= 1 V, VS= 4.5 V

V+ = +5.5 V

100

1000

10000

100

150

200

250

300

350

-40-20 0 20406080100120140

Axis Title

1st line

2nd line

I+ - Supply Current (nA)

Temperature (°C)

2nd line

V+ = +5 V

= V+ or GND

100

1000

10000

-700

-500

-300

-100

100

300

500

700

-40-200 20406080100120

Axis Title

1st line

2nd line

Leakage Current (pA)

Temperature (°C)

2nd line

ID(OFF),V

D= 4.5 V, VS=-4.5 V

ID(ON),V

D= 4.5 V

IS(OFF),V

D= -4.5 V, VS= 4.5 V

IS(OFF),V

D= 4.5 V, VS=-4.5 V

ID(ON),V

D=-4.5 V

ID(OFF),V

D= -4.5 V, VS= 4.5 V

V±=±5.5 V

100

1000

10000

-50 0 50 100 150

Axis Title

1st line

2nd line

tON(IN), tOFF(IN) - Switching Time (ns)

Temperature (°C)

2nd line

V±=±5 V, t

OFF

V+ = +5 V, t

OFF

100

1000

10000

100

-40-20 0 20406080100120140

Axis Title

1st line

2nd line

I+ - Supply Current (μA)

Temperature (°C)

2nd line

V+ = +5 V

VIN = 2.5 V

DG611E, DG612E, DG613E

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Supply Current vs. Switching Frequency

Switching Threshold vs. Supply Voltage (Single Supply)

Supply Current vs. Input Voltage

Insertion Loss, Off-Isolation, Crosstalk vs. Frequency

Switching Threshold vs. Supply Voltage (Dual Supply)

100

1000

10000

0.00001

0.0001

0.001

0.01

0.1

100

1000

10 100 1000 10K 100K 1M 10M

Axis Title

1st line

2nd line

I+ - Supply Current (μA)

Input Switching Frequency (Hz)

2nd line

V+ = +3 V

V+ = +5 V

100

1000

10000

0.00001

0.0001

0.001

0.01

0.1

100

1000

10 000

10 1000 100K 10M

Axis Title

1st line

2nd line

I+,I-, IGND - Supply Current (μA)

Input Switching Frequency (Hz)

2nd line

V+ = +5 V

V- = -5 V

I+

I-

IGND

100

1000

10000

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

234567891011121314

Axis Title

1st line

2nd line

VIN - Switching Threshold (V)

V+ - Supply Voltage (V), Single Supply

2nd line

-40 CV

INH

125 CV

INL

100

1000

10000

0.00001

0.0001

0.001

0.01

0.1

100

1000

10 000

100 000

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Axis Title

1st line

2nd line

I+ - Supply Current (μA)

VIN (V)

2nd line

V+ = 3 V

V+ = 5 V

100

1000

10000

-140

-130

-120

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

100K 1M 10M 100M 1G

Axis Title

1st line

2nd line

Loss, OIRR, XTALK (dB)

Frequency (Hz)

2nd line

OIRR

V±=±5 V

Loss

XTALK

100

1000

10000

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

234567

Axis Title

1st line

2nd line

VIN - Switching Threshold (V)

V± - Supply Voltage (V), Dual Supply

2nd line

-40 °CV

INH

125 °CV

INL

DG611E, DG612E, DG613E

www.vishay.com Vishay Siliconix

S20-0209-Rev. C, 20-Apr-2020 10 Document Number: 78910

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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TEST CIRCUITS

Fig. 1 - Switching Time

Fig. 2 - Break-Before-Make (DG613E)

Fig. 3 - Charge Injection

0 V

Logic

Input

Switch

Input*

3 V

50 %

0 V

tr < 5 ns

tf < 5 ns

90 %

tOFF

tON

Note: Logic input waveform is inverted for switches that

have the opposite logic sense control

CL (includes fixture and stray capacitance)

V+

RL + rDS(on)

VO = VS

S D

- 5 V

GND

35 pF

V-

300 Ω

+ 5 V

90 %

0 V

Logic

Input

Switch

Output

3 V

50 %

0 V

Output

0 V

90 %

VO2

VO1

90 %

VS1

VS2

tDtD

VO2

CL (includes fixture and stray capacitance)

V+

V-

VS2

IN2

VS1

RL2

300 Ω

D1VO1

CL2

35 pF

-5 V

GND

+ 5 V

RL1

300 ΩCL1

35 pF

IN1

1 nF

V+

V-

3 V

- 5 V

GND

+ 5 V

OFFONOFF

ΔV

INX

Q = ΔVO x CL

DG611E, DG612E, DG613E

www.vishay.com Vishay Siliconix

S20-0209-Rev. C, 20-Apr-2020 11 Document Number: 78910

For technical questions, contact: analogswitchtechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TEST CIRCUITS

Fig. 4 - Crosstalk

Fig. 5 - Off-Isolation Fig. 6 - Source / Drain Capacitances



Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?78910.

0 V, 2.4 V

XTALK

Isolation = 20 log

C = RF bypass

0 V, 2.4 V

IN150 Ω

IN2

Rg = 50 Ω

V+

- 5 V

GNDV-

+ 5 V

50 Ω

0 V, 2.4 V

V+

Rg = 50 Ω

- 5 V

GNDV-C

Off Isolation = 20 log

+ 5 V

C = RF Bypass

V+

-5 V

GNDV-C

0 V, 2.4 V

Meter

HP4192A

Impedance

Analyzer

or Equivalent

+ 5 V

Package Information

www.vishay.com Vishay Siliconix

Revision: 09-May-16 1Document Number: 64694

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Thin miniQFN16 Case Outline

Notes

(1) Use millimeters as the primary measurement.

(2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994.

(3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively.

(4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip.

(5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body.

(6) Package warpage max. 0.05 mm.

DIMENSIONS MILLIMETERS (1) INCHES

MIN. NOM. MAX. MIN. NOM. MAX.

A 0.50 0.55 0.60 0.020 0.022 0.024

A1 0 - 0.05 0 - 0.002

A3 0.15 ref. 0.006 ref.

b 0.15 0.20 0.25 0.006 0.008 0.010

D 2.50 2.60 2.70 0.098 0.102 0.106

e 0.40 BSC 0.016 BSC

E1.70

1.80 1.90 0.067 0.071 0.075

L 0.35 0.40 0.45 0.014 0.016 0.018

L1 0.45 0.50 0.55 0.018 0.020 0.022

N (3) 16 16

Nd (3) 44

Ne (3) 44

ECN: T16-0226-Rev. B, 09-May-16

DWG: 6023

0.10 C

0.10

0.10 C

Side view

Top view Bottom view

12 11 10

16 L1

1234

Pin #1 identier (5)

Seating

plane

Terminal tip (4)

16 x b

0.10

0.05

1211109

15 x L

321

All Leads

0.101 mm

0.004 IN

e B A1 LĬ

4312 8756

131416 15 91012 11

Package Information

Vishay Siliconix

Document Number: 71194

02-Jul-01 www.vishay.com

SOIC (NARROW): 16ĆLEAD

JEDEC Part Number: MS-012

MILLIMETERS INCHES

Dim Min Max Min Max

A1.35 1.75 0.053 0.069

A10.10 0.20 0.004 0.008

B0.38 0.51 0.015 0.020

C0.18 0.23 0.007 0.009

D9.80 10.00 0.385 0.393

E3.80 4.00 0.149 0.157

e1.27 BS C 0.050 BSC

H5.80 6.20 0.228 0.244

L0.50 0.93 0.020 0.037

Ĭ0_8_0_8_

ECN: S-03946—Rev. F, 09-Jul-01

DWG: 5300

Vishay Siliconix

Package Information

Document Number: 74417

23-Oct-06

www.vishay.com

Symbols

DIMENSIONS IN MILLIMETERS

Min Nom Max

A - 1.10 1.20

A1 0.05 0.10 0.15

A2 - 1.00 1.05

B 0.22 0.28 0.38

C - 0.127 -

D 4.90 5.00 5.10

E 6.10 6.40 6.70

E1 4.30 4.40 4.50

e-0.65-

L 0.50 0.60 0.70

L1 0.90 1.00 1.10

y--0.10

θ10°3°6°

ECN: S-61920-Rev. D, 23-Oct-06

DWG: 5624

TSSOP: 16-LEAD

PAD Pattern

www.vishay.com Vishay Siliconix

Revision: 02-Sep-11 1Document Number: 63550

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RECOMMENDED MINIMUM PAD FOR TSSOP-16

0.281

(7.15)

Recommended Minimum Pads

Dimensions in inches (mm)

0.171

(4.35)

0.055

(1.40)

0.012

(0.30)

0.026

(0.65)

0.014

(0.35)

0.193

(4.90)

Document Number: 66557 www.vishay.com

Revision: 05-Mar-10 1

PAD Pattern

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR MINI QFN 16L

0.400

(0.0157)

0.225

(0.0089)

0.463

(0.0182)

0.562

(0.0221)

2.900

(0.1142)

1.200

(0.0472)

2.100

(0.0827)

Mounting Footprint

Dimensions in mm (inch)

Application Note 826

Vishay Siliconix

www.vishay.com Document Number: 72608

24 Revision: 21-Jan-08

APPLICATION NOTE

RECOMMENDED MINIMUM PADS FOR SO-16

0.246

(6.248)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.152

(3.861)

0.047

(1.194)

0.028

(0.711)

0.050

(1.270)

0.022

(0.559)

0.372

(9.449)

Return to Index

Legal Disclaimer Notice

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Revision: 01-Jan-2021 1Document Number: 91000

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