Data Sheet CR12FM-12B 600V - 12A - Thyristor R07DS1100EJ0200 Rev.2.00 Sep. 11, 2018 Medium Power Use Features * IT (AV) : 12 A * VDRM : 600 V * IGT: 30 mA * Tj: 150C * Insulated Type (Viso : 2000 V) * Planar Passivation Type Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) 2 3 1. Cathode 2. Anode 3. Gate 1 1 1 2 3 2 3 Application Power supply, motor control, heater control and other general purpose applications. Maximum Ratings Parameter Symbol Voltage class 12 Unit Repetitive peak reverse voltage Non-repetitive peak reverse voltage VRRM VRSM 600 720 V V DC reverse voltage Repetitive peak off-state voltage VR (DC) VDRM 480 600 V V DC off-state voltage VD (DC) 480 V Parameter RMS on-state current Symbol IT (RMS) Ratings 18.8 Unit A Conditions Average on-state current IT (AV) 12 A Surge on-state current ITSM 360 A I2 t 544 A2s Commercial frequency, sine half wave 180conduction, Tc = 81C 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current I2t for fusing Peak gate power dissipation PGM 5 W Average gate power dissipation Peak gate forward voltage PG (AV) VFGM 0.5 6 W V Peak gate reverse voltage Peak gate forward current VRGM IFGM 10 2 V A Junction temperature Storage temperature Tj Tstg -40 to +150 -40 to +150 C C Isolation voltage Note2 Viso 2000 V R07DS1100EJ0200 Rev.2.00 Sep. 11, 2018 Ta=25C, AC 1 minute, each terminal to case Page 1 of 7 CR12FM-12B Data Sheet Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. -- -- Typ. -- -- Max. 2.0 5.0 Unit mA mA Test conditions Tj = 125C, VRRM applied Tj = 150C, VRRM applied Repetitive peak off-state current IDRM -- -- -- -- 2.0 5.0 mA mA Tj = 125C, VDRM applied Tj = 150C, VDRM applied On-state voltage VTM -- -- 1.6 V Gate trigger voltage VGT -- -- 1.5 V Tc = 25C, ITM = 40 A, instantaneous value Tj = 25C, VD = 6 V, IT = 1A Gate non-trigger voltage VGD 0.2 0.1 -- -- -- -- V V Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Gate trigger current Holding current IGT IH -- -- -- 30 30 -- mA mA Thermal resistance Rth (j-c) -- -- 3.2 C/W Tj = 25C, VD = 6 V, IT = 1A Tj = 25C, VD = 12 V Junction to caseNote1 Note2 Notes: 1. The contact thermal resistance Rth(c-f) in case of greasing is 0.5C /W. 2. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. R07DS1100EJ0200 Rev.2.00 Sep. 11, 2018 Page 2 of 7 CR12FM-12B Data Sheet Performance Curves Maximum On-State Characteristics Surge On-State Current (A) 101 1 2 3 4 100 101 102 Conduction Time (Cycles at 60Hz) Gate Characteristics Gate Trigger Current vs. Junction Temperature PG(AV) = 0.5W PGM = 5W IFGM = 2A VGT = 1.5V 100 I GT = 30 mA -1 10 VGD = 0.1V 101 Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) 200 On-State Voltage (V) VFGM = 6V 102 103 104 103 Typical Example 102 101 - 40 0 40 80 120 160 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 101 - 40 300 0 100 5 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) 100 0 Gate Voltage (V) 400 Tj = 25C 102 101 Rated Surge On-State Current 0 40 80 120 Junction Temperature (C) R07DS1100EJ0200 Rev.2.00 Sep. 11, 2018 160 Transient Thermal Impedance (C/W) On-State Current (A) 103 101 100 -1 10 -2 10 10-4 10-3 10-2 10-1 100 Time (s) Page 3 of 7 CR12FM-12B Data Sheet Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 40 360 Resistive, inductive loads 30 180 120 90 60 q = 30 20 10 0 0 4 8 12 16 20 100 80 60 60120 40 q = 30 90 180 20 0 4 8 12 16 20 24 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 140 40 30 60 180 120 90 q = 30 20 q 10 q 360 Case Temperature (C) Average Power Dissipation (W) q 360 120 0 24 50 4 8 12 16 20 q q 360 120 Resistive loads 100 80 60 60 120 40 20 Resistive loads 0 0 0 24 0 q = 30 90 4 12 8 180 16 20 24 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 160 q 40 180 120 90 360 Resistive, 30 inductive loads 60 DC q = 30 270 20 10 Case Temperature (C) 50 Average Power Dissipation (W) Resistive, inductive loads 140 q Case Temperature (C) Average Power Dissipation (W) 50 Resistive, inductive loads 140 360 100 80 60 60 120 40 0 4 8 12 16 20 Average On-State Current (A) R07DS1100EJ0200 Rev.2.00 Sep. 11, 2018 24 0 270 q = 30 90 180 20 0 q 120 0 4 8 12 16 DC 20 24 Average On-State Current (A) Page 4 of 7 Data Sheet 140 120 100 80 60 40 20 0 - 40 0 40 80 120 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 125C 140 120 100 80 60 40 20 0 101 102 104 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 - 40 0 40 80 120 160 Junction Temperature (C) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example Tj = 150C 140 120 100 80 60 40 20 0 101 102 103 104 Rate of Rise of Off-State Voltage (V/ms) Rate of Rise of Off-State Voltage (V/ms) Holding Current vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width 102 Holding Current (mA) 103 Typical Example 101 Typical Distribution Typical Example VD=12V 100 - 40 0 40 80 120 Junction Temperature (C) R07DS1100EJ0200 Rev.2.00 Sep. 11, 2018 160 100 (%) Breakover Voltage (dv/dt = vV/ms) Breakover Voltage (dv/dt = 1V/ms) 100 (%) Junction Temperature (C) 100 (%) Typical Example Breakover Voltage (dv/dt = vV/ms) Breakover Voltage (dv/dt = 1V/ms) 160 Gate Trigger Current (tw) Gate Trigger Current (DC) Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C) x 100 (%) Breakover Voltage vs. Junction Temperature Repetitive Peak Reverse Voltage (Tj = tC) 100 (%) Repetitive Peak Reverse Voltage (Tj = 25C)x CR12FM-12B 103 tw Typical Example 0.1s 102 101 10 1 100 101 102 Gate Current Pulse Width (ms) Page 5 of 7 CR12FM-12B Data Sheet Package Dimensions Ordering code: #BG0, #BH0 JEITA Package Code - RENESAS Code Previous Code MASS (Typ) [g] PRSS0003AP-A TO-220FPA 1.65 Unit: mm 2.70.2 f 3.20.2 1.950.3 15.00.3 6.90.3 10.00.3 0.7450.2 13.00.5 0.3950.2 1.140.2 0.690.15 0.60 +0.19 - 0.11 2.540.25 3.20.2 4.50.2 2.540.25 R07DS1100EJ0200 Rev.2.00 Sep. 11, 2018 Page 6 of 7 CR12FM-12B Data Sheet Package Dimensions Ordering code: #BB0 <To be EOLed> Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A MASS[Typ.] 1.9g Previous Code 10.160.20 2.540.20 6.68 0.20 3.30.2 1.28 0.30 3.18 0.20 15.870.20 f 3.180.10 12.98 0.30 Unit: mm Max 1.47 2.76 0.20 0.800.20 0.50 4.70.2 5.08 0.20 Ordering Information Orderable Part Number CR12FM-12B#BG0 Package TO-220FPA Quantity Note3 Remark 50 pcs./ tube Straight type Status Mass Production CR12FM-12B-#BG0 CR12FM-12B#BH0 TO-220FPA TO-220FPA 50 pcs./ tube 50 pcs./ tube :Lead form type Straight type Mass Production CR12FM-12B-#BH0 CR12FM-12B#BB0 TO-220FPA TO-220FP 50 pcs./ tube 50 pcs./ tube :Lead form type Straight type EOL Candidate Notes: 3. 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