R07DS1100EJ0200 Rev.2.00 Page 1 of 7
Sep. 11, 2018
Data Sheet
CR12FM-12B
600V - 12A - Thyristor
Medium Power Use
Features
• IT (AV) : 12 A
• VDRM : 600 V
• IGT: 30 mA
• Tj: 150°C
• Insulated Type (Viso : 2000 V)
• Planar Passivation Type
Outline
Application
Power supply, motor control, heater control and other general purpose applications.
Maximum Ratings
Parameter
Symbol
Voltage class
Unit
12
Repetitive peak reverse voltage
VRRM
600
V
Non-repetitive peak reverse voltage
VRSM
720
V
DC reverse voltage
VR (DC)
480
V
Repetitive peak off-state voltage
VDRM
600
V
DC off-state voltage
VD (DC)
480
V
Parameter
Symbol
Ratings
Conditions
RMS on-state current
IT (RMS)
18.8
Average on-state current
IT (AV)
12
Commercial frequency, sine half wave
180conduction, Tc = 81C
Surge on-state current
ITSM
360
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing
I2t
544
Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
Peak gate power dissipation
PGM
5
Average gate power dissipation
PG (AV)
0.5
Peak gate forward voltage
VFGM
6
Peak gate reverse voltage
VRGM
10
Peak gate forward current
IFGM
2
Junction temperature
Tj
–40 to +150
Storage temperature
Tstg
–40 to +150
Isolation voltage Note2
Viso
2000
Ta=25C, AC 1 minute,
each terminal to case
123
123
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
RENESAS Package code: PRSS0003AP-A
(Package name: TO-220FPA)
2
1
3
1. Cathode
2. Anode
3. Gate
R07DS1100EJ0200
Rev.2.00
Sep. 11, 2018
CR12FM-12B Data Sheet
R07DS1100EJ0200 Rev.2.00 Page 2 of 7
Sep. 11, 2018
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak reverse current
IRRM
—
—
2.0
mA
Tj = 125C, VRRM applied
—
—
5.0
mA
Tj = 150C, VRRM applied
Repetitive peak off-state current
IDRM
—
—
2.0
mA
Tj = 125C, VDRM applied
—
—
5.0
mA
Tj = 150C, VDRM applied
On-state voltage
VTM
—
—
1.6
V
Tc = 25C, ITM = 40 A,
instantaneous value
Gate trigger voltage
VGT
—
—
1.5
V
Tj = 25C, VD = 6 V, IT = 1A
Gate non-trigger voltage
VGD
0.2
—
—
V
Tj = 125C, VD = 1/2 VDRM
0.1
—
—
V
Tj = 150C, VD = 1/2 VDRM
Gate trigger current
IGT
—
—
30
mA
Tj = 25C, VD = 6 V, IT = 1A
Holding current
IH
—
30
—
mA
Tj = 25C, VD = 12 V
Thermal resistance
Rth (j-c)
—
—
3.2
C/W
Junction to caseNote1 Note2
Notes: 1. The contact thermal resistance Rth(c-f) in case of greasing is 0.5C /W.
2. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
CR12FM-12B Data Sheet
R07DS1100EJ0200 Rev.2.00 Page 3 of 7
Sep. 11, 2018
Performance Curves
102
103
101
-40 040 80 120 160
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)×100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)×100 (%)
101
10
-1
100102
103
101
100101
101102103104
102
VGD = 0.1V
VGT = 1.5V
-40 040 80 120 160
Typical Example
= 2A
PG(AV)
= 0.5W
VFGM = 6V
Typical Example
PGM = 5W
0
100
200
300
400
IFGM
I= 30 mA
GT
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (ºC/W)
Time (s)
10-1
10-2
101
100
10-1
10-4 10-3 10-2 100
0
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
103
102
101
100
51 42 3
Tj = 25°C
CR12FM-12B Data Sheet
R07DS1100EJ0200 Rev.2.00 Page 4 of 7
Sep. 11, 2018
0 4 8 12 16 20 24
q= 30°
60°
90°
120°
180°
0
10
20
30
40
50
0 4 8 12 16 20 24
q= 30°
60°
90°
120°
180°
0 4 8 12 16 20 24
q= 30°
60°
90°
120°
180°
0 4 8 12 16 20 24
q= 30°
60°
90°
120°
180°
0
10
20
30
40
50
0 4 8 12 16 20 24
q= 30°
60°90°
120°
180°
Maximum Average Power Dissipation
(Single-Phase Half Wave)
Average Power Dissipation (W)
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Case Temperature (ºC)
Average On-State Current (A)
Case Temperature (ºC)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Average Power Dissipation (W)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Average On-State Current (A) Average On-State Current (A)
Average Power Dissipation (W)
Case Temperature (°C)
Average On-State Current (A)Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Allowable Case Temperature vs.
Average On-State Current
(Rectangular Wave)
0
10
20
30
40
50
0 4 8 12 16 20 24
60°90°
120°
180°
q= 30°
Resistive,
inductive loads
360°
q
Resistive,
inductive loads
360°
q
Resistive loads
360°
q q
Resistive loads
360°
q q
q
360°
Resistive,
inductive loads
q
360°
Resistive,
inductive loads
DC
270°
0
40
80
120
160
20
60
100
140
0
40
80
120
160
20
60
100
140
0
40
80
120
160
20
60
100
140
270°
DC
CR12FM-12B Data Sheet
R07DS1100EJ0200 Rev.2.00 Page 5 of 7
Sep. 11, 2018
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Voltage (V/ms)
100 (%)
Breakover Voltage (dv/dt = vV/ms)
Breakover Voltage (dv/dt = 1V/ms)
160
120
100
60
20
0
40
80
140
160
120
100
60
20
0
40
80
140
101102103104
Typical Example
Tj = 125ºC
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Voltage (V/ms)
100 (%)
Breakover Voltage (dv/dt = vV/ms)
Breakover Voltage (dv/dt = 1V/ms)
101102103104
Typical Example
Tj = 150ºC
-40 040 80 120 160
160
120
40
80
140
100
20
60
0
Breakover Voltage vs.
Junction Temperature
Junction Temperature (ºC)
×100 (%)
Breakover Voltage (Tj = tºC)
Breakover Voltage (Tj = 25ºC)
Junction Temperature (ºC)
×100 (%)
Repetitive Peak Reverse Voltage (Tj = tºC)
Repetitive Peak Reverse Voltage (Tj = 25ºC)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Typical Example
160
120
40
80
140
100
20
60
0
-40 040 80 120 160
Typical Example
Holding Current (mA)
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
102
100
101
-40 040 80 120 160
Typical Example
VD=12V
Typical
Distribution
Typical
Example
10-1100101102
Gate Trigger Current vs.
Gate Current Pulse Width
100 (%)
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Gate Current Pulse Width (ms)
Typical Example
103
102
101
tw
0.1s
CR12FM-12B Data Sheet
R07DS1100EJ0200 Rev.2.00 Page 6 of 7
Sep. 11, 2018
Package Dimensions
Ordering code: #BG0, #BH0
MASS (Typ) [g]
1.65
Unit: mm
Previous CodeRENESAS Code
PRSS0003AP-A TO-220FPA
JEITA Package Code
-
2.7
±
0.2
10.0
±
0.3
0.395
±
0.2
1.14
±
0.2
0.69
±
0.15
+0.19
-0.11
0.60
2.54
±
0.252.54
±
0.25
0.745
±
0.2
f3.2
±
0.2
6.9
±
0.3
3.2
±
0.2
4.5
±
0.2
13.0
±
0.5
1.95±0.3
15.0
±
0.3
CR12FM-12B Data Sheet
R07DS1100EJ0200 Rev.2.00 Page 7 of 7
Sep. 11, 2018
Package Dimensions
Ordering code: #BB0 <To be EOLed>
Ordering Information
Orderable Part Number
Package
Quantity Note3
Remark
Status
CR12FM-12B#BG0
TO-220FPA
50 pcs./ tube
Straight type
Mass Production
CR12FM-12B-#BG0
TO-220FPA
50 pcs./ tube
:Lead form type
CR12FM-12B#BH0
TO-220FPA
50 pcs./ tube
Straight type
Mass Production
CR12FM-12B-#BH0
TO-220FPA
50 pcs./ tube
:Lead form type
CR12FM-12B#BB0
TO-220FP
50 pcs./ tube
Straight type
EOL Candidate
Notes: 3. Please confirm the specification about the shipping in detail.
5.08±0.20
3.18±0.20
6.68±0.20
f3.18±0.10
0.80±0.20
1.28 ±0.30
2.76±0.20
4.7±0.2
0.50
2.54±0.20
Max 1.47
3.3±0.2
15.87±0.20
12.98±0.30
10.16±0.20
Unit: mm
1.9g
MASS[Typ.
PRSS0003AG-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
TO-220FP
]
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