SS13M - SS16M Taiwan Semiconductor 1A, 30V - 60V Surface Mount Schottky Barrier Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified Very low profile - typical height of 0.68mm Low power loss, high efficiency Ideal for automated placement Moisture sensitivity level: level 1, per J-STD-020 Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF(AV) 1 A VRRM 30 - 60 V IFSM 25 A TJ MAX 150 C Package Micro SMA APPLICATIONS Converter Free wheeling LED lighting Adapters MECHANICAL DATA Case: Micro SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.006 g (approximately) Micro SMA ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Forward current Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode Junction temperature Storage temperature SS13M A 30 SYMBOL VRRM IF(AV) SS14M B 40 1 SS16M C 60 UNIT V A IFSM 25 A TJ - 55 to +150 C TSTG - 55 to +150 C 1 Version: N1810 SS13M - SS16M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP. UNIT Junction-to-lead Thermal Resistance RJL 30 C/W Junction-to-ambient thermal resistance RJA 125 C/W Junction-to-case thermal resistance RJC 40 C/W ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) PARAMETER CONDITIONS SS13M SS14M Forward voltage per diode (1) SS16M TYP. MAX. UNIT IF = 0.5A,TJ = 25C 0.45 - V IF = 1.0A,TJ = 25C 0.52 0.55 V 0.35 - V IF = 1.0A,TJ = 125C 0.46 0.50 V IF = 0.5A,TJ = 25C 0.51 - V IF = 1.0A,TJ = 25C 0.64 0.68 V 0.46 - V 0.57 0.60 V 5 50 A 3 10 mA TJ = 150C 5.3 - mA TJ = 25C 5 50 A 3 10 mA 6 - mA 50 - pF 40 - pF IF = 0.5A,TJ = 125C IF = 0.5A,TJ = 125C SYMBOL VF VF IF = 1.0A,TJ = 125C TJ = 25C SS13M SS14M Reverse current @ rated VR per diode (2) SS16M TJ = 125C IR TJ = 125C IR TJ = 150C SS13M Junction capacitance SS14M 1 MHz, VR=4.0V SS16M CJ Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING SS13MHRSG Micro SMA 3000 / 7" Plastic reel SS14MHRSG Micro SMA 3000 / 7" Plastic reel SS16MHRSG Micro SMA 3000 / 7" Plastic reel SS13M RSG Micro SMA 3000 / 7" Plastic reel SS14M RSG Micro SMA 3000 / 7" Plastic reel SS16M RSG Note: "H" means AEC-Q101 qualified Micro SMA 3000 / 7" Plastic reel 2 Version: N1810 SS13M - SS16M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 1 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) 1.2 0.8 0.6 0.4 0.2 SS16M 100 SS13M - SS14M 10 RESISTIVE OR INDUCTIVE LOAD 0 1 0 25 50 75 100 125 150 0.1 1 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics TJ=150C 10 1 TJ=125C 0.1 0.01 TJ=25C 0.001 0.0001 20 30 40 50 60 70 80 90 100 10 10 1 1 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TJ=125C TJ=150C TJ=25C TJ=125C 0.01 0.1 TJ=25C Pulse width 0.001 0.01 0 100 UF1DLW (A) 100 10 10 LEAD TEMPERATURE ( C) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) o 0.3 0.4 0.5 0.1 0.2 0.3 0.6 0.4 0.7 0.5 0.8 0.9 1 1.1 1.2 0.6 0.7 0.8 0.9 1 FORWARD VOLTAGE (V) 3 Version: N1810 SS13M - SS16M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.6 Typical Forward Characteristics TJ=150C 10 1 TJ=125C 0.1 0.01 TJ=25C 0.001 0.0001 10 20 30 40 50 60 70 80 90 10010 10 1 0.1 1 0.01 0.1 0.01 0 100 TJ=25C TJ=125C Pulse width TJ=25C 0.3 0.4 0.5 0.1 0.2 0.3 0.6 0.4 0.7 0.8 0.9 1 1.1 0.5 0.6 0.7 0.8 0.9 1 REVERSE VOLTAGE (V) Fig.8 Typical Transient Thermal Impedance 40 8.3ms Single Half Sine-Wave 30 20 10 0 TRANSIENT THERMAL IMPEDANCE(C/W) Fig.7 Maximum Forward Surge Current 10 TJ=125C TJ=150C 0.001 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1 UF1DLW (A) INSTANTANEOUS FORWARD CURRENT (A) 100 PEAK FORWARD SURAGE CURRENT(A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.5 Typical Reverse Characteristics 100 1000 SS16M 100 SS13M - SS14M 10 1 0.1 1 10 100 t-PULSE DURATION(S) NUMBER OF CYCLES AT 60 Hz 4 Version: N1810 1.2 SS13M - SS16M Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Micro SMA SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N YW 5 = Marking Code = Date Code Version: N1810 SS13M - SS16M Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: N1810