m= SEMICONDUCTOR MOTOROLA SC (CXSTRS/R F) MOTOROLA TECHNICAL DATA b&E D MM 6367254 0098621 595 BEMOTL Advance Information MTP2055E TMOS IV Motorola Preferred Device N-Channel Enhancement-Mode Power Field Effect Transistor This advanced E series of TMOS power MOSFETs is TMOS POWER FET designed to withstand high energy in the avalanche and 12 AMPERES commutation modes. These new energy efficient devices RpSion) = 0.15 OHM also offer drain-to-source diodes with fast recovery times. 60 VOLTS Designed for low voltage, high speed switching applica- tions in power supplies, converters and PWM motor con- trols, these devices are particularly well suited for bridge O s circuits where diode speed and commutating safe operat- D ing area are critical, and offer additional safety margin against unexpected voltage transients. @ Internal Source-to-Drain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode Unclamped G Inductive Switching (UIS) Energy Capability Specified at 100C. Commutating Safe Operating Area (CSOA} Specified for 5 Use in Half and Full Bridge Circuits. e@ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode. @ Diode is Characterized for Use in Bridge Circuits. MAXIMUM RATINGS (Ty = 25C unless otherwise noted) Rating Symbol MTP3055E Unit ; Drain-Source Voltage Voss 60 Vde yy a Drain-Gate Voltage (Rgg = 1 MQ) VDGR 60 Vde if Gate-Source Voltage Continuous Ves +20 Vde CASE 2214-06 Non-repetitive (tp < 50 ps) VGSM +40 Vpk TO-220AB Drain Current Continuous ID 12 Adc Pulsed Ibm 26 Total Power Dissipation @ Tc = 25C Pp 40 Watts Derate above 25C 0.32 wre Operating and Storage Temperature Range Ty. Tstg 65 to 150 C THERMAL CHARACTERISTICS Thermal Resistance Junction to Case ReJc 3.12 C Junction to Ambient Raja 62.5 Maximum Lead Temperature for Soldering TL 260 C Purposes, 1/8 from case for 5 seconds ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit | OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 60 _ Vde (Ves = 0, Ip = 0.25 mA) Zero Gate Voltage Drain Current Ipss pA (Vps = Rated Vpss. Ves = 9) _ 10 (Vps = Rated Voss. Veg = 0, Ty = 128C) - 80 (continued) This document contains information on a new product. Specifications and information herein are subjact to change w:thout notice. Preferred device is a Motorola recommended choice for future use and best overalt value. MOTOROLA TMOS POWER MOSFET DATA 3-427MOTOROLA SC CXSTRS/R F) bE D MM 6367254 0098622 425 MEMOTE MTP3055E ELECTRICAL CHARACTERISTICS continued (Tc = 25C unless otherwise noted} Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (continued) | Gate-Body Leakage Current, Forward (Vggp = 20 Vdc, Vps = 4) IGSSF _- 100 nAdc Gate-Body Leakage Current, Reverse (Vqgp = 20 Vdc, Vps = 0} Iassr _ 100 nAdc ON CHARACTERISTICS* Gate Threshold Voltage Va@sith} Vde Vos = Vgs: Ip = 1 mA) 2 45 Ty = 100C 1.5 4 Static Drain-Source On-Resistance (VGsg = 10 Vdc, Ip = 6 Adc) RpS(on) _ 0.15 Ohm Drain-Source On-Voltage (Vgg = 10 V) VDS(on} Vde (Ip = 12 Adc} _ 2 (ip = 6 Adc, Ty = 100C) _ 1.5 Forward Transconductance (Vps = 15 V, Ip = 6 A) OFS 4 _ mhos DRAIN-TO-SOURCE AVALANCHE STRESS CAPABILITY Unclamped Inductive Switching Energy See Figures 15 and 16 Wosr mJ (Ip = 26 A, Vpp = 6 V, Te = 25C, Single Pulse, Non-repetitive] _ 18 (Ip = 124. Vpp = 6V, Tc = 25C, PW. < 200 ys, Duty Cycle < 1%) _ 35 (Ip = 4.8 A, Vpp = & V, Te = 100C, P.W. < 200 ys, Duty Cycle = 1%) _ 16 DYNAMIC CHARACTERISTICS Input Capacitance (Vpg = 25V, Veg = 0, Ciss _ 500 pF Output Capacitance t = 1 MHz) Coss 300 Reverse Transfer Capacitance See Figure 11 Crss _ 100 SWITCHING CHARACTERISTICS* (Tj = 100C) Turn-On Delay Time tdion} _ 20 ns Rise Time (VoD = 25 V, Ip = 0.5 Rated Ip tr _ 60 Rgen = 50 chms) Turn-Off Delay Time See Figure 18 tdioff} _ 65 Fall Time tf _ 65 Total Gate Charge (Vps = 0.8 Rated Vpgs, Qg 12 (Typ) 7 nc Gate-Source Charge Ip = Rated Ip, Veg = 10 } Ogs 6.5 (Typ) - Gate-Drain Charge See Figure 14 Oga 5.5 (Typ) _ SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Valtage (lem = 0.5 Rated Ip, Vsp 1.7 (Typ) | 2 | Vde Forward Turn-On Time dig/dt = 100 A/us, Vag = 0} ton Limited by stray inductance Reverse Recovery Time ter 50 (Typ} | 90 | ns INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance La nH (Measured from the contact screw on tab to center of die) 35 (Typ) - (Measured from the drain !ead 0.25" from package to center of die) 4.5 (Typ) internal Source Inductance Ls 7.5 (Typ) _ (Measured from the source tead 0.25" from package to source bond pad.) *Pulse Test: Pulse Width = 300 us, Duty Cycle = 2%. MOTOROLA TMOS POWER MOSFET DATA 3-428MOTOROLA SC (XSTRS/R F) 66E D MM 6367254 0098823 3b1 MMOTL MTP3055E TYPICAL ELECTRICAL CHARACTERISTICS oo Ip, BRAIN CURRENT (AMPS) > 0 2 4 8 10 Vpg. DRAIN TO SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Ip, ORAIN CURRENT (AMPSI 0 j 2 3 4 5 5 ? a 9 10 Vig. GATE TO-SOURCE VOLTAGE (VOLTS) Figure 3. Transfer Characteristics Ty = 100C Veg - 10V Ros(on}; DRAIN-TO-SOURCE RESISTANCE (OHMS) 3 6 12 16 Ip. DRAIN CURRENT (AMPS} Figure 5. On-Resistance versus Drain Current Veripss). DRAIN TO SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 12 11 09 08 Va@stth) GATE THRESHOLD VOLTAGE {NORMALIZED} -50 2 0 25 50 15 100 125 150 Ty, JUNCTION TEMPERATURE (C) Figure 2. Gate-Threshold Voltage Variation With Temperature 50 0 50 100 150 200 Ty, JUNCTION TEMPERATURE Figure 4. Breakdown Voltage Variation With Temperature oS as co nN > {NORMALIZED} oc ay RDS{on}, DRAIN-TO-SOURCE RESISTANCE a 50 0 50 100 180 200 Ty, JUNCTION TEMPERATURE (C) Figure 6. On-Resistance Variation With Temperature ee MOTOROLA TMOS POWER MOSFET DATA 3-429MOTOROLA SC (CXSTRS/R F) bE D WM 63967254 0098824 2T& MEMOTL MTP3055E SAFE OPERATING AREA INFORMATION ~ Oo ~ Ip. DRAIN CURRENT (AMPS) wma ROS(on) LIMIT Vos = 20V = PACKAGE LIMIT | | SINGLE PULSE LIMIT 4-4 To = 26C 01 1 10 100 Vp. ORAIN-TO-SOURCE VOLTAGE (VOLTS} 0.1 Figure 7. Maximum Rated Forward Biased Safe Operating Area FORWARD BIASED SAFE OPERATING AREA The FBSOA curves define the maximum drain-to- source voltage and drain current that a device can safely handie when it is forward biased, or when it is on, or being turned on. Because these curves include the limi- tations of simultaneous high voltage and high current, up to the rating of the device, they are especially useful to designers of linear systems. The curves are based on a case temperature of 25C and a maximum junction tem- perature of 150C. Limitations for repetitive pulses at var- ious case temperatures can be determined by using the thermai response curves. Motorola Application Note, ANS569, Transient Thermal Resistance-General Data and Its Use provides detailed instructions. 0.01 0.02 0.03 0.05 Ot 02 03 05 1.0 20 30 65.0 10 20 30 50 100 t, TIME (ms} 8 s 8 t 3 ip, DRAIN CURRENT (AMPS) s 0 20 40 60 80 100 Vg. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 8. Maximum Rated Switching Safe Operating Area SWITCHING SAFE OPERATING AREA The switching safe operating area (SOA) of Figure 8 is the boundary that the load line may traverse without in- curring damage to the MOSFET. The fundamental limits are the peak current, Iprny and the breakdown voltage, VIBRIDSS. The switching SOA shown in Figure 8 is ap- plicable for both turn-on and turn-off of the devices for switching times less than one microsecond. Fhe power averaged over a complete switching cycle must b less than: Ty(max) - Te Rec Rect) = rit] Rasc Rayctt) = 3.12CW Max D Curves Apply for Power Pulse Train Shown Read Time at t TJipk) Te = Pipky Reucitl 4 Pip) -| th hk tg. DUTY CYCLE, D = tyAty 20 300 500 1000 Figure 9. Thermal Response MOTOROLA TMOS POWER MOSFET DATA 3-430MOTOROLA SC CXSTRS/P F) b6E D MM 6367254 0098825 134 MEMOTL MTP3055E COMMUTATING SAFE OPERATING AREA (CSOA) The Commutating Safe Operating Area (CSOA} of Fig- ure 12 defines the limits of safe operation for commutated WY source-drain current versus re-applied drain voltage YGs when the source-drain diode has undergone forward 0 bias. The curve shows the limitations of IFpy and peak lFM diet Vp for a given commutation speed. It is applicable when 90% waveforms similar to those of Figure 10 are present. Full ls | iN or half-bridge PWM DC motor controllers are common 10% | at rr ~ applications requiring CSOA data. The time interval tfry is the speed of the commutation >| Le ton | w\ AF cycle. Device stresses increase with commutation speed, 025 lan so tf, is specified with a minimum value, Faster com- foe trr-m mutation speeds require an appropriate derating of IFN. VpSiok) peak Vp or both. Ultimately, tf; is limited primarily by , device, package, and circuit impedances. Maximum YR device stress occurs during t;, as the diode goes from conduction to reverse blocking. VDS(pk) '3 the peak drain-to-source voltage that the Y0s Vf Vast device must sustain during commutation; IFfy is the max- y } imum forward source-drain diode current just prior to the A > MAX CSOA onset of commutation. t STRESS AREA Vp is specified at 80% of ViBRypss to ensure that the . . CSOA stress Is maximized as is eceys from Ign to zero Figure 10. Commutating Waveforms Rgg should be minimized during commutation. Ty has only a second order effect on CSOA. Stray inductances, Lj in Motorolas test circurt are Res DUT assumed to be practical minimums. 20 5 S 4 S Vas = ~ 2 lip = 75 ns 10 oo 3 VGs = => a oO a Va = 80% OF RATED Vpg VdsL = VF t+ ty dlgdt Figure 12. Commutating Safe Operating Area 0 20 40 60 80 Test Circuit Vs, DRAIN-TO-SOURCE VOLTAGE [VOLTS) | ViBRIDS +----------=--------4--=>= Figure 11. Commutating Safe Operating Area (CSOA) Vasit) Yoo 1." \ {oq ----p | 1 (TIME) 1 Vv Woer = (Lig? (a5) DSR (3 0 ) Viaripss Yoo Figure 14. Unclamped Inductive Switching Waveforms Figure 13. Unclamped Inductive Switching Test Circuit MOTOROLA TMOS POWER MOSFET DATA 3-431MOTOROLA SC (XSTRS/R F) bBE D MM 6367254 0098426 070 MBMOTL MTP3055E 1000 a 5 S 800 = coat & = = poy wy 3 2 600 > =< oS E zc gz > 5 a 40 Go 3 3 ws w 4 200 3 wa oS > 20 10 0 10 20 30 4 6 1 1 ; Vos Vos 0 2 8 10 2 4 16 8 4 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qy. TOTAL GATE CHARGE (nC) Figure 15. Capacitance Variation Figure 16. Gate Charge versus Gate-to-Source Voltage Yoo SAME {ov DEVICE TYPE = Bai k AS DUT = > | AR Ot uF FERRITE 100 BEAD BUT Vin = 15 Vpk, PULSE WIDTH <= 100 yus, DUTY CYCLE < 10% Figure 17. Gate Charge Test Circuit ee MOTOROLA TMOS POWER MOSFET DATA 3-432