1 Megabit SRAM / 8 Megabit FLASH
DP3SZ128512X816NY5
ADVANCED INFORMATION
DESCRIPTION:
The DP3SZ128512X816NY5 modules are a
revolutionary new memory subsystem using
Dense-Pac Microsystems’ TSOP stacking
technology. The Module packs 1-Megabit of
CMOS SRAM and 8-Megabits of FLASH EEPROM
in an area of 0.546 in2, while maintaining a total
height of .094 inches maximum.
The DP3SZ128512X816NY5 module contains two
individual TSOP packages, one TSOP containing a
128Kx8 SRAM memory device and on TSOP
containing a 512Kx16 FLASH memory device.
Using the TSOP Stack family of modules offer a
higher board density of memory than available with
conventional through-hole, surface mount or
hybrid techniques.
FEATURES:
•Access Time: 70, 80, 100ns max.
•Single 3.3 Volt Supply
•Fully Static Operation
- No clock or refresh required
•TTL Compatible Inputs and Outputs
•Common Data Inputs and Outputs
•10,000 Erase/Program Cycles (min.)
•Package: 56-Pin TSOP Stack
FUNCTIONAL BLOCK DIAGRAM
PIN NAMES
A0 - A18 Address Inputs
I/O0 - I/O15 Data Input/Output
FCS FLASH Chip Enable
RAMCS SRAM Low Chip Enable
BYTE Select 8-Bit or 16-Bit Mode (FLASH)
RY/BY Ready/Busy Output (FLASH)
WE Write Enable
OE Output Enable
VDD Power (+5V)
VSS Ground
N.C. No Connect
1Meg SRAM/8Meg FLASH, 70 - 100ns, TSOP STACK
30A195-00 A
This document contains information on a product under consideration for
development at Dense-Pac Microsystems, Inc. Dense-Pac reserves the right
to change or discontinue information on this product without prior notice.
FUNCTIONAL BLOCK DIAGRAM
30A195-00
REV. A 1