October 2009 Doc ID 11801 Rev 5 1/10
10
MD2310FX
High voltage NPN power transistor for
standard definition CRT display
Features
State-of-the-art technology:
diffused collector “enhanced generation”
Stable performance versus operating
temperature variation
Low base drive requirement
Tight hFE range at operating collector current
Fully insulated power package U.L. compliant
Application
Horizontal deflection output for monitor and
real flat TV
Description
The MD2310FX is manufactured using planar
technology with diffused collector adopting new
and enhanced high voltage structure. The MD
product series show improved silicon efficiency
bringing updated performance to the horizontal
deflection stage.
Figure 1. Internal schematic diagram
TO-3PF
123
Table 1. Device summary
Order code Marking Package Packing
MD2310FX MD2310FX TO-3PF Tube
www.st.com
Electrical ratings MD2310FX
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1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 1500 V
VCEO Collector-emitter voltage (IB = 0) 700 V
VEBO Emitter-base voltage (IC = 0) 9 V
ICCollector current 14 A
ICM Collector peak current (tP < 5 ms) 21 A
IBBase current 7 A
PTOT Total dissipation at Tc = 25 °C 62 W
VINS
Insulation withstand voltage (RMS) from all three leads to external
heatsink 2500 V
TSTG Storage temperature -65 to 150 °C
TJMax. operating junction temperature 150
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case ____________________Max 2 °C/W
MD2310FX Electrical characteristics
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2 Electrical characteristics
TCASE = 25 °C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 1500 V
VCE = 1500 V Tc= 125 °C
0.2
2
mA
mA
IEBO
Emitter cut-off current
(IC = 0) VEB = 9 V 1 mA
VCEO(sus)
Collector-emitter sustaining
voltage (IB = 0) IC = 100 mA 700 V
VCE(sat)(1) Collector-emitter saturation
voltage IC = 7 A IB = 1.75 A 2.5 V
VBE(sat)(1) Base-emitter saturation voltage IC = 7 A IB = 1.75 A 1.1 V
hFE(1) DC current gain
IC = 1 A VCE = 5 V
IC = 7 A VCE = 1 V
IC = 7 A VCE = 5 V 6
28
5.5
8.5
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
IC = 6 A ___ _ _ fh = 64 kHz
IB(on) = 0.9 A__ VBE(off) = - 2.7 V
LBB(off) = 1.6 µH
2.3
0.12
2.8
0.25
µs
µs
1. Pulse test: pulse duration 300 µs, duty cycle 2 %.
Electrical characteristics MD2310FX
4/10 Doc ID 11801 Rev 5
2.1 Typical characteristics
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. Output characteristics Figure 5. Reverse biased SOA
Figure 6. DC current gain (VCE = 1 V) Figure 7. DC current gain (VCE = 5 V)
MD2310FX Electrical characteristics
Doc ID 11801 Rev 5 5/10
Figure 8. Collector-emitter saturation
voltage
Figure 9. Base-emitter saturation
voltage
Figure 10. Power losses Figure 11. Inductive load switching time
Test circuits MD2310FX
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3 Test circuits
Figure 12. Power losses and inductive load switching test circuit
Figure 13. Reverse biased safe operating area test circuit
MD2310FX Package mechanical data
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4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Package mechanical data MD2310FX
8/10 Doc ID 11801 Rev 5
DIM. mm.
min. typ max.
A5.30 5.70
C2.803.20
D3.10 3.50
D1 1.80 2.20
E0.80 1.10
F 0.65 0.95
F2 1.80 2.20
G 10.30 11.50
G1 5.45
H 15.30 15.70
L9.80 10 10.20
L2 22.8023.20
L326.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15
N1.80 2.20
R3.80 4.20
Dia3.40 3.80
TO-3PF mechanical data
7627132_C
MD2310FX Revision history
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5 Revision history
Table 5. Document revision history
Date Revision Changes
18-Oct-2005 1 First release
25-Nov-2005 2 Complete datasheet
15-Dec-2005 3 Legal page inserted
29-Sep-2006 4 New hFE limit
27-Oct-2009 5 Updated TO-3PF package mechanical data
MD2310FX
10/10 Doc ID 11801 Rev 5
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