FDMS86300DC N-Channel Dual CoolTM 56 PowerTrench(R) MOSFET 80 V, 110 A, 3.1 m Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A Max rDS(on) = 4.0 m at VGS = 8 V, ID = 21 A High performance technology for extremely low rDS(on) 100% UIL Tested Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side D D D S Pin 1 S D S D S D G D D G Top Dual Cool TM S S Pin 1 S Bottom 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 C -Continuous TA = 25 C ID -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG TC = 25 C Power Dissipation TA = 25 C Units V 20 V 110 (Note 1a) 24 (Note 2) 260 (Note 3) Power Dissipation Ratings 80 240 125 (Note 1a) Operating and Storage Junction Temperature Range 3.2 -55 to +150 A mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case (Top Source) 2.3 RJC Thermal Resistance, Junction to Case (Bottom Drain) 1.0 RJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RJA Thermal Resistance, Junction to Ambient (Note 1k) 11 C/W Package Marking and Ordering Information Device Marking 86300 Device FDMS86300DC (c)2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. 1.13 Package Dual CoolTM 56 1 Reel Size 13'' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86300DC N-Channel Dual CoolTM 56 PowerTrench(R) MOSFET July 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 A IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 4.5 V 80 V 45 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 C VGS = 10 V, ID = 24 A 2.6 3.1 rDS(on) Static Drain to Source On Resistance VGS = 8 V, ID = 21 A 3.1 4.0 VGS = 10 V, ID = 24 A, TJ = 125 C 4.1 5.0 VDD = 10 V, ID = 24 A 79 gFS Forward Transconductance 2.5 3.3 -11 mV/C m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 40 V, VGS = 0 V, f = 1 MHz 0.1 5265 7005 pF 929 1235 pF 21 50 pF 1.2 2.6 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) 29 47 VDD = 40 V , ID = 24 A, VGS = 10 V, RGEN = 6 25 44 ns 35 57 ns 9 18 ns Total Gate Charge VGS = 0 V to 10 V 72 101 nC Total Gate Charge VGS = 0 V to 8 V 59 84 Qgs Total Gate Charge Qgd Gate to Drain "Miller" Charge VDD = 40 V ID = 24 A nC 26 nC 14 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage IS Diode continuous forward current IS, pulse Diode pulse current trr Reverse Recovery Time Qrr Reverse Recovery Charge (c)2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. 1.13 VGS = 0 V, IS = 2.7 A (Note 2) 0.72 1.2 VGS = 0 V, IS = 24 A (Note 2) 0.80 1.3 75 TC = 25 C IF = 24 A, di/dt = 100 A/s 2 150 V A 56 88 ns 42 67 nC www.fairchildsemi.com FDMS86300DC N-Channel Dual CoolTM 56 PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted RJC Thermal Resistance, Junction to Case (Top Source) 2.3 RJC Thermal Resistance, Junction to Case (Bottom Drain) 1.0 RJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RJA Thermal Resistance, Junction to Ambient (Note 1c) 27 RJA Thermal Resistance, Junction to Ambient (Note 1d) 34 RJA Thermal Resistance, Junction to Ambient (Note 1e) 16 RJA Thermal Resistance, Junction to Ambient (Note 1f) 19 RJA Thermal Resistance, Junction to Ambient (Note 1g) 26 RJA Thermal Resistance, Junction to Ambient (Note 1h) 61 RJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RJA Thermal Resistance, Junction to Ambient (Note 1k) 11 RJA Thermal Resistance, Junction to Ambient (Note 1l) 13 C/W NOTES: 1. RJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RJC is guaranteed by design while RCA is determined by the user's board design. b. 81 C/W when mounted on a minimum pad of 2 oz copper a. 38 C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 oC, L = 0.3 mH, IAS = 40 A, VDD = 72 V, VGS = 10 V. (c)2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. 1.13 3 www.fairchildsemi.com FDMS86300DC N-Channel Dual CoolTM 56 PowerTrench(R) MOSFET Thermal Characteristics VGS = 10 V VGS = 7 V VGS = 8 V 208 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 260 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 156 VGS = 6.5 V 104 VGS = 6 V 52 VGS = 5.5 V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 4 VGS = 6.5 V 3 VGS = 7 V 2 1 VGS = 10 V VGS = 8 V 0 0 52 104 156 208 260 15 ID = 24 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 6 V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 IS, REVERSE DRAIN CURRENT (A) 208 VDS = 5 V 156 T J = 150 oC 104 TJ = 25 oC 52 T J = -55 oC 5 6 7 TJ = 125 oC 6 3 TJ = 25 oC 300 100 6 7 8 9 10 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 1E-3 0.0 8 VGS , GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics (c)2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. 1.13 9 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 4 12 VGS, GATE TO SOURCE VOLTAGE (V) 260 3 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID = 24 A 0 5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 5.5 V 5 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 0 6 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDMS86300DC N-Channel Dual CoolTM 56 PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 10000 VDD = 30 V ID = 24 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V VDD = 40 V 6 4 1000 Coss Crss 100 2 f = 1 MHz 10 VGS = 0 V 0 0 20 40 60 5 0.1 80 1 Figure 7. Gate Charge Characteristics 160 140 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 80 Figure 8. Capacitance vs Drain to Source Voltage 100 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 120 VGS = 10 V 100 80 Limited by Package 60 VGS = 8 V o RJC = 1.0 C/W 40 20 1 0.01 0.1 1 10 100 0 25 500 50 75 100 125 150 o tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 10000 P(PK), PEAK TRANSIENT POWER (W) I D, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 SINGLE PULSE RJA = 81 oC/W o 1000 100 us 10 THIS AREA IS 1 ms 1 LIMITED BY r DS(on) 0.1 SINGLE PULSE TJ = MAX RATED RJA = 81 oC/W TA = 25 oC 0.01 0.01 10 ms 100 ms 0.1 1s CURVE BENT TO MEASURED DATA 1 10 10 s DC 100200 VDS, DRAIN to SOURCE VOLTAGE (V) 100 10 1 -4 10 -3 10 -2 10 10 -1 10 0 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area (c)2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. 1.13 TA = 25 C Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDMS86300DC N-Channel Dual CoolTM 56 PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZJA(t) = r(t) x RJA SINGLE PULSE 0.001 0.0001 -4 10 RJA = 81 C/W Peak TJ = PDM x ZJA(t) + TA Duty Cycle, D = t1 / t2 -3 10 -2 10 10 -1 0 10 10 1 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve (c)2012 Fairchild Semiconductor Corporation FDMS86300DC Rev. 1.13 6 www.fairchildsemi.com FDMS86300DC N-Channel Dual CoolTM 56 PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted (2X) A .1 C 4.90 (2X) A (2.60) (0.90) 5.10 .1 C CL 8 0.77 B 5 CL 8 7 6 1.27 5 KEEPOUT 2.04 AREA 2.54 A (3.30) 3.91 5.80 1.22 (2.08) 2.67 (0.82) 1 1.27 4 (1.05) OPTIONAL PIN 1 INDICATOR 1 SEE DETAIL A 2 3 4 0.61 1.27 3.81 LAND PATTERN RECOMMENDATION A 5.00 4.80 OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR A 0.41 (8X) SIDES OF THE PACKAGE 0.31 0.50 (8X) 0.40 7 0.10 C A B 3.81 1.27 (0.34) 1 2 3 A 0.71 (4X) 0.44 4 A (1.40) 0.35 0.25 0.40 0.30 CHAMFER CORNER AS PIN #1 IDENT MAY APPEAR AS OPTIONAL 3.58 3.38 1.05 0.95 (0.50) 5.85 A 5.50 (0.20) (8X) 8 7 6 5 0.65 0.45 (4X) 3.86 3.61 0.1 MAX 0.10 C 0.08 C (1.02) 0.30 0.20 SCALE: 2:1 0.05 0.00 C SEATING PLANE NOTES: A) PACKAGE IS NOT FULLY COMPLIANT TO JEDEC MO-240, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. F) DRAWING FILE NAME: PQFN08DREV4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiT OPTOLOGIC(R) AccuPower AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) (R) Fairchild Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FastvCore FETBench FPS OPTOPLANAR(R) (R) Power Supply WebDesigner PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R)* TinyBoost(R) TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM XsensTM (R) * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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