RH1011
3
Rev. F
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SYMBOL
PARAMETER CONDITIONS NOTES
10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 100KRAD (Si) 200KRAD (Si)
UNITSMIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
VOS Input Offset Voltage 1.5 1.5 1.5 2.5 4 mV
IOS Input Offset Current 4 4 4 20 50 nA
IBInput Bias Current 50 100 150 200 300 nA
AVOL Large-Signal Voltage
Gain
RL = 1kΩ,
–10V≤VOUT≤14.5V
200 200 150 100 50 V/mV
CMRR Common Mode
Rejection Ratio
90 90 90 90 86 dB
Input Voltage Range VS = ±15V
VS = Single 5V
8,9 –14.5
0.5
13
3.0
–14.5
0.5
13
3.0
–14.5
0.5
13
3.0
–14.5
0.5
13
3.0
–14.5
0.5
13
3.0
V
V
VOL Output Saturation
Voltage
VIN = –5mV, ISINK = 8mA
ISINK = 50mA
11 0.4
1.5
0.4
1.5
0.4
1.5
0.4
1.5
0.4
1.5
V
V
Output Leakage Current VIN = 5mV, VGND = –15V
VOUT = 20V
10 10 100 100 100 nA
Positive Supply Current 11 4.0 4.0 4.0 4.0 4.0 mA
Negative Supply Current 11 2.5 2.5 2.5 2.5 2.5 mA
Strobe Current Minimum to Ensure Output
Transistor is Turned Off
7,9,11 500 500 500 500 500 µA
Input Capacitance 6 (Typ) 6 (Typ) 6 (Typ) 6 (Typ) 6 (Typ) pF
TABLE 1A: ELECTRICAL CHARACTERISTICS
(Postirradiation) (Note 10)
Note 1: Inputs may be clamped to supplies with diodes so that maximum
input voltage actually exceeds supply voltage by one diode drop. See Input
Protection discussion in the LT
®
1011 data sheet.
Note 2: TJMAX = 150°C.
Note 3: Output is sinking 1.5mA with VOUT = 0V.
Note 4: These specifications apply for all supply voltages from a single 5V
to ±15V, the entire input voltage range and for both high and low output
states. The high state is ISINK = 100µA, VOUT = (V+ – 1V) and the low
state is ISINK = 8mA, VOUT = 0.8V. Therefore, this specication defines a
worst-case error band that includes effects due to common mode signals,
voltage gain and output load.
Note 5: Drift is calculated by dividing the offset difference measured at
minimum and maximum temperatures by the temperature difference.
Note 6: Response time is measured with a 100mV step and 5mV
overdrive. The output load is a 500Ω resistor tied to 5V. Time
measurement is taken when the output crosses 1.4V.
Note 7: Do not short the STROBE pin to ground. It should be current
driven at 3mA to 5mA for the shortest strobe time. Currents as low as
500µA will strobe the RH1011 if speed is not important. External leakage
on the STROBE pin in excess of 0.2µA when the strobe is “off” can cause
offset voltage shifts.
Note 8: See graph, Input Offset Voltage vs Common Mode Voltage on the
LT1011 data sheet.
Note 9: Guaranteed by design, characterization or correlation to other
tested parameters.
Note 10: VS = ±15V, VCM = 0V, RS = 0Ω, TA = 25°C, VGND = V–, output at
Pin 7, unless otherwise noted.
Note 11: VGND = 0V.