GBU4A - GBU4M — Bridge Rectifiers
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
GBU4A - GBU4M Rev. C1 1
July 2009
GBU4A - GBU4M
Bridge Rectifiers
Features
Glass passivated junction.
Surge overload rating: 150 amperes peak.
Reliable low cost construction utilizing molded plastic technique.
Ideal for printed circuit board.
UL certified, UL #E111753, UL # E326243.
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* Device mounted on PCB with 0.5 × 0.5” (12 × 12mm).
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
4A 4B 4D 4G 4J 4K 4M
VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
VRMS Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V
VRDC Reverse Voltage (Rated VR) 50 100 200 400 600 800 1000 V
IF(AV) Average Recitified Forward Current, @ TA = 100°C
@ TA = 40°C
4.0
3.0
A
A
IFSM Non-Repetitive Peak Forward Surge Current
8.3ms Single Half-Sine-Wave 150 A
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature -55 to +150 °C
Symbol Parameter Value Units
PDPower Dissipation 8 W
RθJA Thermal Resistance, Junction to Ambient, * per leg 19 °C/W
Symbol Parameter Value Units
VFForward Voltage, per element @ 4.0A 1.0 V
IRReverse Current, per element @ Rated VR TA = 25°C
TA = 125°C
5.0
500
µA
µA
I2t Rating for Fusing t < 8.35ms 93 A2s
+~~-
GBU
GBU4A - GBU4M — Bridge Rectifiers
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
GBU4A - GBU4M Rev. C1 2
Typical Performance Characteristics
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
Figure 3. Reverse Current vs Reverse Voltage Figure 4. Non-Repetitive Surge Current
Figure 5. Total Capacitance
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I40