BCW61CE6327XT - INFINEON TECHNOLOGIES AG

2011-07-29

1

BCW61..., BCX71...

1

2

3

PNP Silicon AF Transistors

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BCW60, BCX70 (NPN)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCW61A

BCW61B

BCW61C

BCW61D

BCX71G

BCX71H

BCX71J

BCX71K

BAs

BBs

BCs

BDs

BGs

BHs

BJs

BKs

1=B

2=E

3=C

SOT23

2011-07-29

2

BCW61..., BCX71...

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

BCW61...

BCX71...

VCEO

32

45

V

Collector-base voltage

BCW61...

BCX71...

VCBO

32

45

Emitter-base voltage VEBO 5

Collector current IC100 mA

Peak collector current, tp ≤ 10 ms ICM 200

Peak base current IBM 200

Total power dissipation-

TS ≤ 71 °C

Ptot 330 mW

Junction temperature Tj150 -

Storage temperature Tst

g

-65 ... 150 °C

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1) RthJS ≤ 240 K/W

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

2011-07-29

3

BCW61..., BCX71...

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BCW61...

IC = 10 mA, IB = 0 , BCX71...

V(BR)CEO

32

45

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BCW61...

IC = 10 µA, IE = 0 , BCX71...

V(BR)CBO

32

45

-

Emitter-base breakdown voltage

IE = 1 µA, IC = 0

V(BR)EBO 5 - -

Collector-base cutoff current

VCB = 32 V, IE = 0

VCB = 45 V, IE = 0

VCB = 32 V, IE = 0 , TA = 150 °C, BCW61...

VCB = 45 V, IE = 0 , TA = 150 °C, BCX71...

ICBO

-

0.02

20

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0

IEBO - - 20 nA

DC current gain1)

IC = 10 µA, VCE = 5 V, hFE-grp. A/G

IC = 10 µA, VCE = 5 V, hFE-grp. B/H

IC = 10 µA, VCE = 5 V, hFE-grp. C/J

IC = 10 µA, VCE = 5 V, hFE-grp. D/K

IC = 2 mA, VCE = 5 V, hFE-grp. A/G

IC = 2 mA, VCE = 5 V, hFE-grp. B/H

IC = 2 mA, VCE = 5 V, hFE-grp. C/J

IC = 2 mA, VCE = 5 V, hFE-grp. D/K

IC = 50 mA, VCE = 1 V, hFE-grp. A/G

IC = 50 mA, VCE = 1 V, hFE-grp. B/H

IC = 50 mA, VCE = 1 V, hFE-grp. C/J

IC = 50 mA, VCE = 1 V, hFE-grp. D/K

hFE

20

30

40

100

120

180

250

380

60

80

100

110

140

200

300

460

170

250

350

500

-

220

310

460

630

-

2011-07-29

4

BCW61..., BCX71...

DC Electrical Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

VCEsat

-

0.12

0.2

0.25

0.55

V

Base emitter saturation voltage1)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

VBEsat

-

0.7

0.83

0.85

1.05

Base-emitter voltage1)

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

IC = 50 mA, VCE = 1 V

VBE(ON)

-

0.55

-

0.52

0.65

0.78

-

0.75

-

1Pulse test: t < 300µs; D < 2%

2011-07-29

5

BCW61..., BCX71...

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

fT- 250 - MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb - 1.5 - pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb - 8 -

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. A/B

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/J

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/K

h11e

-

2.7

3.6

4.5

7.5

-

kΩ

Open-circuit reverse voltage transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. A/B

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/J

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/K

h12e

-

1.5

2

3

-

10-4

Short-circuit forward current transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. A/B

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/J

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/K

h21e

-

200

260

330

520

-

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. A/B

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/J

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/K

h22e

-

18

24

30

50

-

µS

Noise figure

IC = 200 µA, VCE = 5 V, f = 1 kHz,

∆ f = 200 Hz, RS = 2 kΩ, hFE-grp. A/K

F- 2 - dB

2011-07-29

6

BCW61..., BCX71...

DC current gain hFE = ƒ(IC)

VCE = 5 V

10

EHP00351BCW 61/BCX 71

-2 2

10mA

0

10

3

10

5

10

-1

10

0

10

1

C

FE

h

Ι

1

10

2

10

˚C

100

5

25

˚C

-50

˚C

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 40

0

10

EHP00349BCW 61/BCX 71

CEsat

V

V 0.5

-1

10

0

10

1

2

10

5

Ι

C

mA

0.1 0.2 0.3 0.4

˚C

100

25

˚C

-50

˚C

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 40

0

10

EHP00348BCW 61/BCX 71

BE sat

V

0.6 V 1.2

-1

10

0

10

1

2

10

5

Ι

C

mA

0.2 0.4 0.8

˚C

25

100

˚C

-50

˚C

Collector current IC = ƒ(VBE)

VCE = 5 V

0

10

EHP00350BCW 61/BCX 71

BE

V

0.5 V 1.0

-2

10-1

100

2

10

5

Ι

CmA

5

1

10

˚C

100 25 -50

˚C ˚C

2011-07-29

7

BCW61..., BCX71...

Collector cutoff current ICBO = ƒ(TA)

VCB = VCEmax

0

10

EHP00352BCW 61/BCX 71

A

T

150

-1

4

10

Ι

CBO

nA

50 100

0

10

1

10

3

10

C

typ

max

10

2

Transition frequency fT = ƒ(IC)

VCE = parameter in V, f = 2 GHz

10

EHP00347BCW 61/BCX 71

03

10mA

1

10

3

10

5

10

1

10

2

10

2

C

T

fMHz

Ι

55

Collector-base capacitance Ccb = ƒ(VCB)

Emitter-base capacitance Ceb = ƒ(VEB)

0 4 8 12 16 V22

VCB(VEB)

0

1

2

3

4

5

6

7

8

9

10

pF

12

CCB(CEB)

CCB

CEB

Total power dissipation Ptot = ƒ(TS)

0 15 30 45 60 75 90 105 120 °C 150

TS

0

30

60

90

120

150

180

210

240

270

300

mW

360

Ptot

2011-07-29

8

BCW61..., BCX71...

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

10

EHP00345BCW 61/BCX 71

-6

0

10

5

D

=

5

101

5

102

3

10

10-5 10-4 10-3 10-2 100

s

0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t

p

=

DT

tp

T

totmax

tot

PDC

P

p

t

h parameter he = ƒ(IC) normalized

VCE = 5V

10

EHP00353BCW 61/BCX 71

-1 1

10mA

-1

10

2

10

5

10

0

10

0

C

e

h

Ι

1

10

5

11e

h

12e

h

21e

h

22e

h

V

CE

= 5 V

h parameter he = ƒ(VCE) normalized

IC = 2mA

0

EHP00354BCW 61/BCX 71

CE

V

30

10 20

0.5

1.0

1.5

2.0

he

V

Ι

C

= 2 mA

11

h

h12

22

h

Noise figure F = ƒ(VCE)

IC = 0.2mA, RS = 2kΩ , f = 1kHz

10

EHP00355BCW 61/BCX 71

-1 2

10V

5

100101

F

10

15

20

dB

0

CE

V

2011-07-29

9

BCW61..., BCX71...

Noise figure F = ƒ(f)

VCE = 5V, ZS = ZSopt

10

EHP00356BCW 61/BCX 71

-2 2

10kHz

5

10

-1

10

0

F

1

10

15

20

dB

f

0

Noise figure F = ƒ(IC)

VCE = 5V, f = 120Hz

10

EHP00357BCW 61/BCX 71

-3 1

10mA

5

10

-2

10

-1

F

0

10

15

20

dB

0

Ι

C

S

R

= 1 M

Ω

100 k

Ω

10 k

Ω

1 k

Ω

500

Noise figure F = ƒ(IC)

VCE = 5V, f = 1kHz

10

EHP00358BCW 61/BCX 71

-3 1

10mA

5

10-2 10-1

F

0

10

15

20

dB

0

Ι

C

Ω

= 1 M

S

R

100 k

Ω

10 k

Ω

1k

Ω

500

Ω

Noise figure F = ƒ(IC)

VCE = 5V, f = 10kHz

10

EHP00359BCW 61/BCX 71

-3 1

10mA

5

10-2 10-1

F

0

10

15

20

dB

0

Ι

C

= 1 M

RS

100 k

10 k

500

1 k

Ω

2011-07-29

10

BCW61..., BCX71...

Package SOT23

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

EH

s

BCW66

Type code

Pin 1

0.8

0.9 0.91.3

0.8 1.2

0.25

M

BC

1.9

-0.05

+0.1

0.4

±0.1

2.9

0.95

C

B

0...8˚

0.2 A

0.1 MAX.

10˚ MAX.

0.08...0.15

1.3

±0.1

10˚ MAX.

M

2.4

±0.15

±0.1

1

A

0.15 MIN.

1)

1) Lead width can be 0.6 max. in dambar area

12

3

3.15

4

2.65

2.13

0.9

8

0.2

1.15

Pin 1

Manufacturer

2005, June

Date code (YM)

2011-07-29

11

BCW61..., BCX71...

Edition 2009-11-16

Published by

Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee

of conditions or characteristics. With respect to any examples or hints given herein,

any typical values stated herein and/or any information regarding the application of

the device, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation, warranties of non-infringement of

intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,

please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon

Technologies Office.

Infineon Technologies components may be used in life-support devices or systems

only with the express written approval of Infineon Technologies, if a failure of such

components can reasonably be expected to cause the failure of that life-support

device or system or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body or

to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be

endangered.