ky SGS-THOMSON MICROELECTRONICS BU941ZT/BU9412ZTFI BU941Z2SM HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE a WIDE RANGE OF PACKAGES POWER PACKAGE SPECICALLY DESIGNED FOR SURFACE MOUTING (Power SO-10) APPLICATIONS a HIGH RUGGEDNESS ELECTRONIC IGNITIONS ABSOLUTE MAXIMUM RATINGS PRELIMINARY DATA Power SO-10 INTERNAL SCHEMATIC DIAGRAM for Power $O-10 Emitter: pins 1-5 Base: pins 6 - 10 Collector: tab ee | Symbal Parameter Value Unit BU941Z2T |BUS941ZTFI | BUS41Z2SM Vceo |Collector-Emitter Voltage (Ip = 0) 350 Vv Veso |Emitter-Base Voltage (Ic = 0) 5 Vv le Gollector Current 15 A ICM Gollector Peak Current 30 A lB Base Current 1 A IBM Base Peak Current 5 A Ptot Total Dissipation at Te = 25C 150 55 150 Ww Tstg Storage Temperature -65 to 175 | -65to 150 | -65 to 175 C Tj Max. Operating Junction Temperature 175 150 175 C Dicember 1993 1/8BU941ZT/BUS41ZTFI/BU941ZSM THERMAL DATA TO-220 ISOWATT220 | PowerSO-10 Rihj-case | Thermal Resistance Junction-case Max 1 2.7 1 C/W ELECTRICAL CHARACTERISTICS (Toase = 25 C unless otherwise specified) Symbol Param eter Test Conditions Min. Typ. Max. Unit IcEO Gollector Cut-off Voce = 300 V 100 pA Current (lp = 0) Voe= 300 VT) = 125C 0.5 mA lEBO Emitter Gut-off Gurrent |Vep =5 V 20 mA (Ic = 9) VoL* Glamping Voltage le = 100 mA 350 500 Vv Voe(sat* |Collector-Emitter Ic=8A Ip = 100 mA 1.8 Vv Saturation Voltage le=10A Ip=250 mA 1.8 V VBE(sat* |Base-Emitter Ic=8A Ip = 100 mA 2.2 Vv Saturation Voltage Ic=10A Ip=250mA 2.5 Vv hFe* DG Current Gain lce=5A Vee=10V 300 Ve Diode Forward Voltage |IlF=10A 2.5 Vv Functional Test Vcc = 24 V L=7 mH 10 (see fig. 1) INDUCTIVE LOAD Vee = 12 V L= 7% mH Velamp = 300 V ts Storage Time lc=7A Ip=7OmA 15 ps t Fall Time VepE=9 Rpe=472 0.5 ps (see fig. 3) * Pulsed: Pulse duration = 300 ps, duty cycle 1.5 % Safe Operating Areas Ic(A} lp MAX . PULSED PULSE OPERATION 2 10, 5 Ir MAX 4 CONT 0 TO-220 103 1 5 ISQWATT220 For single non repetitive pulse 2/8 DC Current Gain hee 10 pS 100 is D.C. 10! GCh5870 ce () 1077 E97 Eo eaeBU941ZT/BU941ZTFI/BU941ZSM DC Current Gain GCS5980 Are 10 16 107" 10 (A) Collector-emitter Saturation Voltage 0355. I 0 tal Base-emitter Saturation Voltage GC-O0357 Vaetatl (} ! Ls} (A) SGS-THOMSON MICROELEGTROR ky Collector-emitter Saturation Voltage Voetsct) tv) LS o5 I 0 IgA Base-emitter Saturation Voltage C-0356 ! Li] Ig IA Collector-emitter Saturation Voltage GC-Oa52 a LS 05 o 50 {00 BO lalmAl 3/8BU941ZT/BUS41ZTFI/BU941ZSM FIGURE 1: Functional Test Circuit FIGURE 2: Functional Test Waveform 24 16.6 ms 1L.6ms L =7mH INPUT SIGNAL fg=0.3A DRIVER AND BASE CURRENT 0.22 CURRENT LIMITING TUT. L uF 1 =8A CIRCUIT COLLECTOR CURRENT 0 vi COLLECTOR clamp EMITTER 0.20 VOLTAGE 26v Qe----- S- 3676 5-3677 FIGURE 8: Switching Time Test Circuit $7 7484! 4/8 kyBU941ZT/BU941ZTFI/BU941ZSM 3/8 hy SGS-THOMSON MICROELECTRONICSBU941ZT/BUS41ZTFI/BU941ZSM L2 Le PO11G oe [Gy 365-THOMSON SJ/ wiecrosvectronicsBU941ZT/BU941ZTFI/BU941ZSM DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 3.45 3.5 3.55 0.135 0.187 0.140 B 1.28 1.30 0.050 0.051 G 0.15 0.006 D 9.40 9.50 9.60 0.370 0.374 0.378 E 4.98 5.08 5.48 0.196 0.200 0.216 E1 0.40 0.45 0.60 0.016 0.018 0.024 E2 1.17 1.27 1.37 0.046 0.050 0.054 F 9.30 9.40 9.50 0.366 0.370 0.374 FA 7.95 8.00 8.15 0.313 0.315 0.321 7.40 7.50 7.60 0.291 0.295 0.299 H 6.80 6.90 7.00 0.267 0.417 0.421 | 0.10 0.004 K 13.80 14.10 14.40 0.543 0.555 0.567 L 0.40 0.50 0.016 0.020 M 1.60 1.67 1.80 0.063 0.066 0.071 N 0.60 0.08 1.00 0.024 0.031 0.039 = 0.08 mm. 7/8 hy SGS-THOMSON MICROELECTRONICSBU941ZT/BUS41ZTFI/BU941ZSM Information furnished is believed to be accurate and reliable. However, SGS- THOMSON Microelectronics assumes noresponsability ior the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications meniioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Miercelectronics products arenot authorized for use as critical componenisin life support devices or systems without express written approval of SGS-THOMSON Microelecionics. @ 1994 SGS-THOMSON Microelecironics - All Righis Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Ausiralia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malia - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 8/8 A97 Sesonscmones