1
SEMICONDUCTORS
SUMMARY
BVCEO = 60V : RSAT = 34m ; IC= 4.5A
DESCRIPTION
Packaged in the E-line outline this new low saturation 60V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
•Extemely low equivalent on-resistance; RSAT = 34m at 5A
•4.5 amps continuous current
•Up to 15 amps peak current
•Very low saturation voltages
APPLICATIONS
•Emergency lighting circuits
•Motor driving (including DC fans)
•Solenoid, relay and actuator drivers
•DC modules
•Backlight inverters
DEVICE MARKING
ZXT
N20
10
ZXTN2010A
ISSUE 1 - JUNE 2005
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
DEVICE QUANTITY
ZXTN2010ASTOA
ZXTN2010ASTZ 2000 units / reel
2000 units / carton
ORDERING INFORMATION
PINOUT
E-LINE
ZXTN2010A
SEMICONDUCTORS
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PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) R⍜JA 125 °C/W
Junction to ambient (b) R⍜JA 175 °C/W
NOTES
(a)For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Collector lead length to solder point 4mm.
(b For a device mounted in a socket in still air conditions. Collector lead length 10mm.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BVCBO 150 V
Collector-emitter voltage BVCEO 60 V
Emitter-base voltage BVEBO 7V
Continuous collector current (a) IC4.5 A
Peak pulse current ICM 15 A
Practical power dissipation (a)
Linear derating factor PD1.0
8W
mW/°C
Power dissipation at TA=25°C (b)
Linear derating factor PD0.71
5.7 W
mW/°C
Operating and storage temperature range Tj,T
stg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
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CHARACTERISTICS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BVCBO 150 190 V IC=100␮A
Collector-emitter breakdown voltage BVCER 150 190 V IC=1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage BVCEO 60 80 V IC=10mA*
Emitter-base breakdown voltage BVEBO 78.1 VI
E=100␮A
Collector cut-off current ICBO 20
0.5 nA
␮AVCB=120V
VCB=120V, Tamb=100⬚C
Collector cut-off current ICER
Rⱕ1k⍀
20
0.5 nA
␮AVCB=120V
VCB=120V, Tamb=100⬚C
Emitter cut-off current IEBO 10 nA VEB=6V
Collector-emitter saturation voltage VCE(SAT) 18
40
45
95
170
30
55
65
130
210
mV
mV
mV
mV
mV
IC=100mA, IB=5mA*
IC=1A, IB=100mA*
IC=1A, IB=50mA*
IC=2A, IB=50mA*
IC=5A, IB=200mA*
Base-emitter saturation voltage VBE(SAT) 950 1050 mV IC=4A, IB=200mA*
Base-emitter turn-on voltage VBE(ON) 840 950 mV IC=4A, VCE=1V*
Static forward current transfer ratio hFE 100
100
55
20
200
200
105
40
300 IC=10mA, VCE=1V*
IC=2A, VCE=1V*
IC=5A, VCE=1V*
IC=10A, VCE=1V*
Transition frequency fT130 MHz IC=100mA, VCE=10V
f=50MHz
Output capacitance COBO 31 pF VCB=10V, f=1MHz*
Switching times tON
tOFF
42
760 ns
ns IC=1A, VCC=10V,
IB1=IB2=100mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
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SEMICONDUCTORS
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TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
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ISSUE 1 - JUNE 2005
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedtoprovideoutline information onlywhich(unlessagreed by theCompanyinwriting) may notbeused,applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
DIM Millimeters Inches
Min Max Min Max
A 0.41 0.495 0.016 0.0195
B 0.41 0.495 0.016 0.0195
C 3.61 4.01 0.142 0.158
D 4.37 4.77 0.172 0.188
E 2.16 2.41 0.085 0.095
F—2.50 — 0.098
G 1.27 NOM 0.050 NOM
L 13.00 13.97 0.512 0.550
PACKAGE DIMENSIONS