2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 15 VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units 2N5770 350 2.8 125 mW mW/C C/W 357 C/W 2N5770 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 3.0 mA, IB = 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC = 1.0 A, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 4.5 ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCB = 15 V, IE = 0 VCB = 15 V, IE = 0, TA = 150 C VEB = 3.0 V, IC = 0 VEB = 2.0 V, IC = 0 V 10 1.0 10 1.0 nA A A A 200 0.4 V ON CHARACTERISTICS* 20 50 hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage VCE = 1.0 V, IC = 3.0 mA VCE = 10 V, IC = 8.0 mA IC = 10 mA, IB = 1.0 mA VBE( sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 1.0 V 6.0 dB SMALL SIGNAL CHARACTERISTICS NF Noise Figure Ccb Collector-Base Capacitance IC = 1.0 mA, VCE = 8.0 V, f = 60 MHz, Rg = 400 VCB = 10 V, IE = 0, f = 1.0 MHz Cib Input Capacitance VEB = 0.5 V hfe Small-Signal Current Gain IC = 8.0 mA, VCE = 10 V, f = 100 MHz IC = 8.0 mA, VCE = 10 V, f = 1.0 kHz IE = 8.0 mA, VCB = 10 V, f = 79.8 MHz rb'CC Collector-Base Time Constant 0.7 1.1 pF 2.0 pF 9.0 18 40 3.0 240 20 pS FUNCTIONAL TEST Gpe Amplifier Power Gain 15 dB Power Output I C = 6.0 mA, VCB = 12 V, f = 200 MHz VCC = 15 V, IC = 8.0 mA, PO 30 mW Collector Efficiency f = 500 MHz 25 % *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 2N5770 NPN RF Transistor