2N5770 - Fairchild Semiconductor

2N5770

Discrete POWER & Signal

Technologies

NPN RF Transistor

2N5770

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Vo ltage 15 V

VCBO Collector-Base Voltage 30 V

VEBO E m i tter - Base Voltage 4 . 5 V

ICC ollector Current - Continuous 50 mA

TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C

Symbol Characteristic Max Units

2N5770

PDTo ta l De vice Dissip at i on

Derate above 25°C350

2.8 mW

mW/°C

RθJC Thermal Resistance, Junction to Case 125 °C/W

RθJA Thermal Resistance, Junction to Ambient 357 °C/W

CBETO-92

This device is designed for use as RF amplifiers, oscillators and

multipliers with collector currents in the 1.0 mA to 30 mA range.

Sourced from Process 43. See PN918 for characteristics.

 1997 Fairchild Semiconductor Corporation

2N5770

NPN RF Transistor

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

Symb ol Parameter Test Conditions Min Max Un its

V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 3.0 mA, IB = 0 15 V

V(BR)CBO Collector-Base Breakdown Voltage IC = 1.0 µA, IE = 0 30 V

V(BR)EBO Em itter-B ase Breakdown V olt age I E = 1 0 µA, IC = 0 4.5 V

ICBO Co llector Cutoff Curre nt VCB = 1 5 V, IE = 0

VCB = 15 V, IE = 0 , TA = 1 50 °C10

1.0 nA

µA

IEBO E mi tter C u t off Cur ren t V EB = 3.0 V, IC = 0

VEB = 2.0 V, IC = 0 10

1.0 µA

µA

ON CHARACTERISTICS*

hFE DC Cu r rent G ain VCE = 1.0 V, IC = 3.0 mA

VCE = 1 0 V, IC = 8.0 mA 20

50 200

VCE(sat)Col lector-Emitter Saturation Vol tag e IC = 10 mA, IB = 1.0 mA 0.4 V

VBE(sat)B ase-Em itt er S aturat ion Voltage IC = 1 0 mA, IB = 1.0 mA 1.0 V

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

SMALL SIGNAL CHARACTERISTICS

NF Noise Figure IC = 1.0 mA, VCE = 8.0 V,

f = 6 0 MHz, Rg = 400 Ω6.0 dB

Ccb Collector-Base Capacitance VCB = 1 0 V, IE = 0, f = 1.0 MHz 0.7 1.1 pF

Cib Input Capacitance VEB = 0.5 V 2.0 pF

hfe Small-Signal Current Gain IC = 8.0 mA, VCE = 1 0 V,

f = 100 MHz

IC = 8.0 mA, VCE = 1 0 V,

f = 1.0 kHz

9.0

240

rb’CCCollector-Base Time Constant IE = 8.0 mA, VCB = 10 V,

f = 79.8 MHz 3.0 20 pS

FUNCTIONAL TEST

Gpe A m pl ifier Po wer Gain I C = 6.0 mA, VCB = 1 2 V,

f = 200 MH z 15 dB

POPower Ou tp ut V CC = 1 5 V, IC = 8.0 mA, 30 mW

ηColl e ctor E fficien c y f = 500 MH z 2 5 %