Vishay Siliconix
DG406B, DG407B
Document Number: 72552
S11-0179-Rev. C, 07-Feb-11
www.vishay.com
1
16-Ch/Dual 8-Ch High-Performance CMOS Analog Multiplexers
FEATURES
• Low on-resistance - RDS(on): 45
• Low charge injection - Q: 11 pC
• Fast transition time - tTRANS: 115 ns
• Low oower: 0.2 mW
• Single supply capability
BENEFITS
• Higher accuracy
• Reduced glitching
• Improved data throughput
• Reduced power consumption
• Increased ruggedness
• Wide supply ranges: ± 5 V to ± 20 V
APPLICATIONS
• Data acquisition systems
• Audio signal routing
• Medical instrumentation
• ATE systems
• Battery powered systems
• High-rel systems
• Single supply systems
DESCRIPTION
The DG406B is a 16-channel single-ended analog
multiplexer designed to connect one of sixteen inputs to a
common output as determined by a 4-bit binary address. The
DG407B selects one of eight differential inputs to a common
differential output. Break-before-make switching action
protects against momentary shorting of inputs.
An on channel conducts current equally well in both
directions. In the off state each channel blocks voltages up
to the power supply rails. An enable (EN) function allows the
user to reset the multiplexer/demultiplexer to all switches off
for stacking several devices. All control inputs, address (Ax)
and enable (EN) are TTL compatible over the full specified
operating temperature range.
Applications for the DG406B, DG407B include high speed
data acquisition, audio signal switching and routing, ATE
systems, and avionics. High performance and low power
dissipation make them ideal for battery operated and remote
instrumentation applications.
Designed in the 44 V silicon-gate CMOS process, the
absolute maximum voltage rating is extended to 44 volts,
allowing operation with ± 20 V supplies. Additionally single
(12 V) supply operation is allowed. An epitaxial layer
prevents latchup.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
* Pb containing terminations are not RoHS compliant, exemptions may apply
V+
S11
S10
S9
NC
A3
D
S2
S1
GND
A1
A2
NC
Dual-In-Line and SOIC Wide-Body
A0
EN
V-
NC S8
S16 S7
S15 S6
S14 S5
S13 S4
S12 S3
1
2
3
4
5
6
7
8
28
27
26
25
24
23
22
21
Top View
920
10 19
11
12
18
17
13 16
14 15
DG406B
Decoders/Drivers
DG407B
V+
S3b
S2b
S1b
NC
NC
Da
S2a
S1a
GND
A1
A2
Db
Dual-In-Line and SOIC Wide-Body
A0
EN
V-
NC S8a
S8b S7a
S7b S6a
S6b S5a
S5b S4a
S4b S3a
1
2
3
4
5
6
7
8
28
27
26
25
24
23
22
21
Top View
920
10 19
11
12
18
17
13 16
14 15
Decoders/Drivers
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Document Number: 72552
S11-0179-Rev. C, 07-Feb-11
Vishay Siliconix
DG406B, DG407B
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic “0” = VAL 0.8 V
Logic “1” = VAH 2.4 V
X = Do not Care
Decoders/Drivers
PLCC and LCC
7
8
9
5
20
19
21
22
23
24
25
1234
10
11
12 13 14 15 16 17 18
262728
Top View
6
S13
S15
S5
S12 S4
S7
S11
S14 S6
S3
S10 S2
S9S1
SGND
NCNC
NC
3
V+
2
D
1
V-
0
SEN
DG406B
A
A
A
A
16
8
S7b
S5a
S4b S4a
S7a
S3b
S6b S6a
S3a
S5b
S2b S2a
S1b S1a
PLCC and LCC
Top View
GND
NCNC
DNC
V+
D
V-
EN
S
2
1
0
S
A
A
A
8b
8a
b
a
DG407B
Decoders/Drivers
7
8
9
5
20
19
21
22
23
24
25
1234
10
11
12 13 14 15 16 17 18
262728
6
TRUTH TABLE (DG406B)
A3 A
2 A
1 A
0 EN On Switch
X X X X 0 None
0 0 0 0 1 1
0 0 0 1 1 2
0 0 1 0 1 3
0 0 1 1 1 4
0 1 0 0 1 5
0 1 0 1 1 6
0 1 1 0 1 7
0 1 1 1 1 8
1 0 0 0 1 9
1 0 0 1 1 10
1 0 1 0 1 11
1 0 1 1 1 12
1 1 0 0 1 13
1 1 0 1 1 14
1 1 1 0 1 15
1 1 1 1 1 16
TRUTH TABLE (DG407B)
A2 A
1 A0 EN On Switch Pair
X X X 0 None
0 0 0 1 1
0 0 1 1 2
0 1 0 1 3
0 1 1 1 4
1 0 0 1 5
1 0 1 1 6
1 1 0 1 7
1 1 1 1 8
ORDERING INFORMATION (DG406B)
Temp. Range Package Part Number
- 40 °C to 85 °C
28-Pin Plastic DIP DG406BDJ
DG406BDJ-E3
28-Pin PLCC DG406BDN
DG406BDN-T1-E3
28-Pin Widebody SOIC DG406BDW
DG406BDW-E3
ORDERING INFORMATION (DG407B)
Temp. Range Package Part Number
- 40 °C to 85 °C
28-Pin Plastic DIP DG407BDJ
DG407BDJ-E3
28-Pin PLCC DG407BDN
DG407BDN-T1-E3
28-Pin Widebody SOIC DG407BDW
DG407BDW-E3
Document Number: 72552
S11-0179-Rev. C, 07-Feb-11
www.vishay.com
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Vishay Siliconix
DG406B, DG407B
Notes:
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 8.3 mW/°C above 75 °C.
d. Derate 16 mW/°C above 75 °C.
e. Derate 18 mW/°C above 75 °C.
f. Derate 6 mW/°C above 75 °C.
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Voltages Referenced to V- V+ 44
V
GND 25
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2
or 20 mA, whichever occurs first
Current (Any terminal) 30 mA
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100
Storage Temperature - 65 to 150 °C
Power Dissipation (Package)b
28-Pin Plastic DIPc625 mW
28-Pin CerDIPd1.2 W
28-Pin Plastic PLCCc450 mW
LCC-28e1.35 W
28-Pin Widebody SOICf450 mW
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Document Number: 72552
S11-0179-Rev. C, 07-Feb-11
Vishay Siliconix
DG406B, DG407B
SPECIFICATIONS
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VAL = 0.8 V, VAH = 2.4 VfTemp.b Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.d Max.dMin.d Max.d
Analog Switch
Analog Signal RangeeVANALOG Full - 15 15 - 15 15 V
Drain-Source
On-Resistance RDS(on)
VD = ± 10 V, IS = - 10 mA
sequence each switch on
Room
Full 45 60
87
60
74
rDS(on) Matching Between ChannelsgRDS(on) VD = ± 10 V Room 5 %
Source Off Leakage Current IS(off)
VEN = 0 V
VD = ± 10 V
VS = ± 10 V
Room
Full
- 0.5
- 50
0.5
50
- 0.5
- 5
0.5
5
nA
Drain Off Leakage Current ID(off)
DG406B Room
Full
- 1
- 200
1
200
- 1
- 40
1
40
DG407B Room
Full
- 1
- 100
1
100
- 1
- 20
1
20
Drain On Leakage Current ID(on)
VS = VD = ± 10
sequence each
switch on
DG406B Room
Full
- 1
- 200
1
200
- 1
- 40
1
40
DG407B Room
Full
- 1
- 100
1
100
- 1
- 20
1
20
Digital Control
Logic High Input Voltage VINH Full 2.4 2.4 V
Logic Low Input Voltage VINL Full 0.8 0.8
Logic High Input Current IAH VA = 2.4 V, 15 V Full - 1 1 - 1 1 µA
Logic Low Input Current IAL VEN = 0 V, 2.4 V, VA = 0 V Full - 1 1 - 1 1
Logic Input Capacitance Cin f = 1 MHz Room 6 pF
Dynamic Characteristics
Transition Time tTRANS see figure 2 Room
Full
115 148
170
148
161
ns
Break-Before-Make Interval tOPEN see figure 4 Room
Full
39 10
29
10
21
Enable Turn-On Time tON(EN)
see figure 3
Room
Full
75 107
134
107
123
Enable Turn-Off Time tOFF(EN)
Room
Full
50 88
98
88
94
Charge Injection Q CL = 1 nF, VS = 0 V, RS = 0 Room 11 pC
Off IsolationhOIRR VEN = 0 V, RL = 50
f = 1 MHz Room - 86 dB
Source Off Capacitance CS(off) VEN = 0 V, VS = 0 V, f = 1 MHz Room 6
pF
Drain Off Capacitance CD(off) VEN = 0 V
VD = 0 V
f = 1 MHz
Room 108
DG407B Room 54
Drain On Capacitance CD(on)
DG406B Room 114
DG407B Room 57
Power Supplies
Positive Supply Current I+
VEN = VA = 0 or 5 V
Room
Full
23 30
75
30
75
µA
Negative Supply Current I- Room
Full
- 0.02 - 1
- 10
- 1
- 10
Positive Supply Current I+
VEN = 2.4 V, VA = 0 V
Room
Full
28 500
900
500
700
Negative Supply Current I- Room
Full
- 0.01 - 20
- 20
- 20
- 20
Document Number: 72552
S11-0179-Rev. C, 07-Feb-11
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Vishay Siliconix
DG406B, DG407B
Notes:
a. Guaranteed by ± 15 V leakage test, not production tested.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. rDS(on) = RDS(on) MAX. - RDS(on) MIN.
h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.
Stresses beyond those listed under “A bsolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, an d functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VAL = 0.8 V, VAH = 2.4 VfTemp.b Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.d Max.dMin.d Max.d
Analog Switch
Analog Signal RangeeVANALOG Full 0 12 0 12 V
Drain-Source
On-Resistance RDS(on) VD = 3 V, IS = - 1 mA
sequence each switch on
Room 78 100 100
rDS(on) Matching Between
ChannelsgRDS(on) Room 5 %
Source Off Leakage CurrentaIS(off) VEN = 0 V
VD = 10 V or 0.5 V
VS = 0.5 V or 10 V
Room - 0.5 0.5 - 0.5 0.5
nA
Drain Off Leakage CurrentaID(off)
DG406B Room - 1 1 - 1 1
DG407B Room - 1 1 - 1 1
Drain On Leakage CurrentaID(on)
VS = VD = ± 10 V
sequence each
switch on
DG406B Room - 1 1 - 1 1
DG407B Room - 1 1 - 1 1
Dynamic Characteristics
Switching Time of Multiplexer tTRANS
VS1 = 8 V, VS8 = 0 V,
VIN = 2.4 V Room 130 163 163
ns
Enable Turn-On Time tON(EN) VINH = 2.4 V, VINL = 0 V
VS1 = 5 V
Room 93 125 125
Enable Turn-Off Time tOFF(EN) Room 63 94 94
Charge Injection Q CL = 1 nF, VS = 6 V, RS = 0 Room 9 pC
Power Supplies
Positive Supply Current I+ VEN = 0 V or 5 V,
VA = 0 V or 5 V
Room
Full
13 30
75
30
75 µA
Negative Supply Current I- Room
Full
- 0.01 - 20
- 20
- 20
- 20
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Document Number: 72552
S11-0179-Rev. C, 07-Feb-11
Vishay Siliconix
DG406B, DG407B
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. VD and Dual Supply Voltage
On-Resistance vs. VD and Temperature
Leakage vs. Analog Voltage
5
25
45
65
85
105
125
- 20 - 15 - 10 - 5 0 5 1 0 1 5 2 0
RDS ( on)
- Drain-Source On-Resistance (Ω)
V
D
- Drain Voltage (V)
T
A
= 25 °C
± 5 V
± 8 V
± 10 V
± 12 V
± 15 V
± 20 V
5
15
25
35
45
55
65
75
85
- 1 5 - 10 - 5 0 5 10 15
- 55 °C
V ± = ± 15 V
25 °C
RDS(on) - Drain-Source On-Resistance (Ω)
V
D
- Drain Voltage (V)
125 °C
85 °C
- 200
- 150
- 100
- 5 0
0
50
100
150
200
- 1 5 - 10 - 5 0 5 10 15
V
D
or V
S
- Drain or Source V oltage (V)
I
D( of f)
V - = - 15 V
T
A
= 25 °C
I
D
, I
S
(pA)
I
D( on)
I
S( o f f )
On-Resistance vs. VD and Unipolar Supply Voltage
On-Resistance vs. VD and Temperature
Leakage vs. Current
0
50
100
150
200
250
300
350
0 2 4 6 8 10 12 14 16 18 20 22
V+ = 5.0 V
T
A
= 25 °C
RDS(on) - Drain-Source On-Resistance (Ω)
V
D
- Drain V oltage (V)
V+ = 12 V
V+ = 15 V
V+ = 20 V
V+ = 10 V
V+ = 22 V
5
25
45
65
85
105
125
145
02468 1 0 12
- 55 °C
25 °C
RDS(on) - Drain-Source On-Resistance (Ω)
V
D
- Drain Voltage (V)
125 °C
V+ = 12 V
V- = 0 V
85 °C
- 80 - 60 - 40 - 20 0 20 40 60 80 100 120 140
1
1000
10000
Temperature (°C)
10
100
Leakage (pA)
ID(off)
ID(on)
IS(off)
V ± = ± 15 V
Document Number: 72552
S11-0179-Rev. C, 07-Feb-11
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Vishay Siliconix
DG406B, DG407B
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Supply Current vs. Input Switching Frequency
Switching Time vs. Single Supplies
Insertion Loss, Off -Isolation
Crosstalk vs. Frequency
Input Switching Frequency (Hz)
10 100 1 K 10 K 100 K 1 M 10 M
100 p
10 n
100 n
1 m
100
m
1 µ
10 µ
100 µ
Supply Current (nA) I+ -
10 m
1 n
V ± = ± 15 V
I+
I-
25
50
75
100
125
150
175
200
225
250
275
300
5 101520
tON(en)
Supply Voltage (V)
tTRANS
tOFF(en)
Time (ns)
- 10
TALK
100 k
- 110
1 M
- 30
10
- 70
- 50
100 M 1 G
Frequency (Hz)
- 90
Loss
10 M
Loss, OIRR, X (dB)
OIRR
XTA L K
V+ = 15 V
V- = - 15 V
RL = 50 Ω
Switching Time vs. Bipolar Supplies
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
25
50
75
100
125
150
175
200
tON(en)
Supply Voltage (V)
tTRANS
tOFF(en)
Time (ns)
± 5 ± 10 ± 15 ± 20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
5 1015202530
- Switching Threshold (V)
V+ - Supply Voltage (V)
VT
- 3 5
- 3 0
- 2 5
- 2 0
- 1 5
- 1 0
- 5
0
5
10
15
20
25
30
35
- 15 - 12 - 9 - 6 - 3 0 3 6 9 1 2 1 5
V
S
- Analog Voltage (V)
Q - Charge Injection (pC)
V = 15 V
V+ = 12 V
C = 1 nF
V = 5 V
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Document Number: 72552
S11-0179-Rev. C, 07-Feb-11
Vishay Siliconix
DG406B, DG407B
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SCHEMATIC DIAGRAM (Typical Channel)
Switching Time vs. Temperature
25
50
75
100
125
150
175
200
- 55 - 35 - 15 5 25 45 65 85 105 125
Temperature (°C)
tON V = 15 V
tOFF V = ± 15 V
Time (ns)
tTRANS V = 15 V
Figure 1.
EN
A0
GND
S1
V+
D
V+
Sn
V-
Decode/
Drive
Level
Shift
V-
V+
VREF
AX
Document Number: 72552
S11-0179-Rev. C, 07-Feb-11
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Vishay Siliconix
DG406B, DG407B
TEST CIRCUITS
Figure 2. Transition Time
Logic
Input
Switch
Output
VS8
VO
tTRANS
tr < 5 ns
tf < 5 ns
S8 ONS1 ON
tTRANS
0 V
VS1
50 %
90 %
90 %
3 V
0 V
DG406B
S1b
S8b
A2
Db
A1
*
A0
* = S1a – S 8a, S2b - S7b, Da
50 Ω 300 Ω
VO
10 V
10 V
+ 2.4 V
+ 15 V
- 15 V
EN V+
V-GND
35 pF
S1
S2
- S15
S16
A2
A1
A0
50 Ω300 Ω
VO
A3
± 10 V
± 10 V
+ 2.4 V
+ 15 V
- 15 V
EN V+
V-GND
D
35 pF
DG407B
Figure 3. Enable Switching Time
VO
tr < 5 ns
tf < 5 ns
VO
Logic
Input
tON(EN)
90 %
Switch
Output
50 %
tOFF(EN)
3 V
0 V
0 V
A1
50 Ω
A0
S1
VO
A2
- 5 V
+ 15 V
- 15 V
300 Ω
EN
S2
- S16
V+
V-GND
D
35 pF
A3
VO
S1b
A2
S1a - S8a
S2b - S8b
A1
Da and Db
A0
50 Ω 300 Ω
+ 15 V
- 15 V
EN
V+
V-GND 35 pF
DG406B
DG407B
- 5 V
90 %
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Document Number: 72552
S11-0179-Rev. C, 07-Feb-11
Vishay Siliconix
DG406B, DG407B
TEST CIRCUITS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72552.
Figure 4. Break-Before-Make Interval
50 %
80 %
Logic
Input
Switch
Output
VO
VS
tOPEN
tr < 5 ns
tf < 5 ns
0 V
3 V
0 V
50 Ω
A0
All S and Da
300 Ω
A3
D,D b
A1
A2
+ 2.4 V
+ 15 V
- 15 V
EN
V+
V-
VO
GND
+ 5 V
35 pF
DG406B
DG407B
E1E
Q1
A
L
A(1)
e1BB1
S
CeA
L
A1
D
15°
MAX.
1234567891011121314
28 27 26 25 24 23 22 21 20 19 18 17 16 15
Package Information
Vishay Siliconix
Document Number: 71243
06-Jul-01 www.vishay.com
1
PDIP: 28ĆLEAD
MILLIMETERS INCHES
Dim Min Max Min Max
A2.29 5.08 0.090 0.200
A10.39 1.77 0.015 0.070
B0.38 0.56 0.015 0.022
B10.89 1.65 0.035 0.065
C0.204 0.30 0.008 0.012
D35.10 39.70 1.380 1.565
E15.24 15.88 0.600 0.625
E113.21 14.73 0.520 0.580
e12.29 2.79 0.090 0.110
eA14.99 15.49 0.590 0.610
L2.60 5.08 0.100 0.200
Q10.95 2.345 0.0375 0.0925
S0.995 2.665 0.0375 0.105
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5488
Document Number: 71264 www.vishay.com
28-Sep-09 1
Package Information
Vishay Siliconix
PLCC: 28-LEAD
D
0.101 mm
0.004"
D-SQUARE
D1-SQUARE
B
B1
e1
A1
A
A2
D2
DIM. MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
A 4.20 4.57 0.165 0.180
A12.29 3.04 0.090 0.120
A20.51 - 0.020 -
B 0.331 0.553 0.013 0.021
B10.661 0.812 0.026 0.032
D 12.32 12.57 0.485 0.495
D111.430 11.582 0.450 0.456
D29.91 10.92 0.390 0.430
e11.27 BSC 0.050 BSC
ECN: T09-0766-Rev. D, 28-Sep-09
DWG: 5491
Package Information
www.vishay.com Vishay Siliconix
Revision: 01-Aug-11 1Document Number: 71268
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOIC (WIDE-BODY): 28-LEADS
ECN: E11-2209-Rev. D, 01-Aug-11
DWG: 5850
0.3525 0.001 0.06 0.002D
CAVITY NO.
0.295 0.001
0.070 0.005
0.1475 0.001
0.055 0.005
PIN 1 INDICATOR
0.047 0.007 0.001 dp
SURFACE POLISHED
0.010
0.334 0.005
R0.004
R0.008
R0.009
R0.004
0.032 0.005
4°2°
0.041 0.001
0.705 0.001
0.091 0.001
0.017 0.00030.050 TYP. 0.00825 ± 0.00325
0.098 0.002
0.334 0.005
0.291 0.001
0.295 0.001
0.406 0.004
R0.004
7°(4 )
0.020 45°
DETAIL A
DETAIL A
1 2345678
28 27 26 25 24 23 22 21
910
20 19
11
18
12
17
13
16
14
15
All Dimensions In Inches
D
L1
E
BL
e
A1
A
28
1
2
Package Information
Vishay Siliconix
Document Number: 71278
02-Jul-01 www.vishay.com
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28ĆLEAD LCC
MILLIMETERS INCHES
Dim Min Max Min Max
A1.37 2.24 0.054 0.088
A11.63 2.54 0.064 0.100
B0.56 0.71 0.022 0.028
D11.23 11.63 0.442 0.458
E11.23 11.63 0.442 0.458
e1.27 BS C 0.050 BSC
L1.14 1.40 0.045 0.055
L11.96 2.36 0.077 0.093
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5319
E1E
Q1
A
L
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e1B
B1
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S
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Package Information
Vishay Siliconix
Document Number: 71283
03-Jul-01 www.vishay.com
1
CERDIP: 28ĆLEAD
MILLIMETERS INCHES
Dim Min Max Min Max
A4.06 5.92 0.160 0.232
A10.38 1.52 0.015 0.060
B0.38 0.51 0.015 0.020
B11.14 1.65 0.045 0.065
C0.20 0.30 0.008 0.012
D36.58 37.08 1.440 1.460
E15.24 15.88 0.600 0.625
E112.95 13.46 0.510 0.530
e12.54 BS C 0.100 BSC
eA15.24 BSC 0.600 BSC
L3.18 3.81 0.125 0.150
L13.81 5.08 0.150 0.200
Q11.27 2.16 0.050 0.085
S1.52 2.29 0.060 0.090
∝0°15°0°15°
ECN: S-03946—Rev. E, 09-Jul-01
DWG: 5434
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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