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FDD850N10L N-Channel PowerTrench(R) MOSFET 100 V, 15.7 A, 75 m Features Description * RDS(on) = 61 m ( yp.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchld Semiconductor's advanced PowerTrench(R) process that has been tailored to minimize the on-state resistance and maintain superior switching performance. * RDS(on) = 64 m (Typ.) @ VGS = 5 V, ID = 12 A * Low Gate Charge (Typ. 22.2 nC) * Low Crss (Typ. 42 pF) * Fast Switching * 100% Avalanche Tested Application * Improved dv/dt Capability * Consumer Appliances * RoHS Compliant * LED TV and Monitor * Synchronous Rectification * Uninterruptible Power Supply * Micro Solar Inverter D D G S G D-PAK S MOSFET Maximum Ratings TC = Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage 25oC unless otherwise noted. Parameter ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 25oC) 20 V A 11.1 (Note 1) 63 A (Note 2) 41 mJ (Note 3) 6.0 V/ns (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds TL Unit V 15.7 - Continuous (TC = 100oC) - Pulsed FDD850N10L 100 - Derate Above 25oC 50 W 0.33 W/oC -55 to +175 o C 300 o C Thermal Characteristics Symbol Parameter FDD850N10L RJC Thermal Resistance, Junction to Case, Max. 3.0 RJA Thermal Resistance, Junction to Ambient, Max. 87 (c)2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C1 1 Unit o C/W www.fairchildsemi.com FDD850N10L -- N-Channel PowerTrench(R) MOSFET November 2013 Part Number FDD850N10L Top Mark FDD850N10L Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - 0.1 - V/oC Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, Referenced to 25oC VDS = 80 V, VGS = 0 V - - 1 VDS = 80 V, TC = 150oC - - 500 VGS = 20 V, VDS = 0 V - - 100 VGS = VDS, ID = 250 A A nA On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 - 2.5 V VGS = 10 V, ID = 12 A - 61 75 m VGS = 5 V, ID = 12 A VDS = 10 V, ID = 15.7 A - 64 96 m - 31 - S - 1100 1465 pF - 80 105 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V VGS = 10 V VGS = 5 V Qg(tot) Total Gate Charge at 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 80 V, ID = 15.7 A - 42 - pF - 22.2 28.9 nC - 12.3 16.0 nC - 3.0 - nC - 5.7 - nC - 17 44 ns - 21 52 ns - 27 64 ns - 8 26 ns - 1.75 - Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time ESR Equivalent Series Resistance (G-S) VDD = 50 V, ID = 15.7 A, VGS = 5 V, RG = 4.7 (Note 4) f = 1 MHz Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 15.7 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 63 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 12 A - - 1.3 V trr Reverse Recovery Time - 38 - ns Qrr Reverse Recovery Charge VGS = 0 V, VDS = 80 V, ISD = 15.7 A, dIF/dt = 100 A/s - 50 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 1 mH, IAS = 9.1 A, RG = 25 , starting TJ = 25C. 3. ISD 15.7 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. (c)2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C1 2 www.fairchildsemi.com FDD850N10L -- N-Channel PowerTrench(R) MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 6.0V 5.0V 3.5V 3.0V *Notes: 1. VDS = 10V 2. 250s Pulse Test ID, Drain Current[A] ID, Drain Current[A] 100 10 10 o 175 C o 25 C o -55 C 1 *Notes: 1. 250s Pulse Test o 1 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 0.1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 4 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.16 0.12 VGS = 5V 0.08 VGS = 10V 0.04 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o 0.00 *Note: TC = 25 C 0 10 20 30 ID, Drain Current [A] 40 1 0.2 50 Figure 5. Capacitance Characteristics 2. 250s Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 5000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 Capacitances [pF] 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.20 RDS(ON) [], Drain-Source On-Resistance 0 Ciss Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 0.1 1 10 VDS, Drain-Source Voltage [V] (c)2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C1 VDS = 20V VDS = 50V VDS = 80V 8 6 4 2 Crss 0 100 3 *Note: ID = 15.7A 0 4 8 12 16 20 Qg, Total Gate Charge [nC] 24 www.fairchildsemi.com FDD850N10L -- N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 0.90 -100 *Notes: 1. VGS = 0V 2. ID = 250A -50 0 50 100 150 o TJ, Junction Temperature [ C] *Notes: 1. VGS = 10V 2. ID = 12A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 15 100s ID, Drain Current [A] ID, Drain Current [A] 1.0 18 10 1ms Operation in This Area is Limited by R DS(on) 10ms 100ms DC *Notes: 12 VGS = 10V 9 VGS = 5V 6 o 1. TC = 25 C 3 o 0.01 0.1 1.5 Figure 10. Maximum Drain Current vs. Case Temperature 100 0.1 2.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area 1 2.5 2. TJ = 175 C 3. Single Pulse o RJC = 3.0 C/W 1 10 VDS, Drain-Source Voltage [V] 0 25 100 200 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve JC o ZJC (t), Thermal Response Thermal Response [Z [ ]C/W] 4 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 0.01 -5 10 t2 *Notes: Single pulse o 1. ZJC(t) = 3.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 10 10 -1 10 1 Pulse Duration [sec] tRectangular 1, Rectangular Pulse Duration [sec] (c)2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C1 4 www.fairchildsemi.com FDD850N10L -- N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) FDD850N10L -- N-Channel PowerTrench(R) MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C1 5 www.fairchildsemi.com FDD850N10L -- N-Channel PowerTrench(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C1 6 www.fairchildsemi.com FDD850N10L -- N-Channel PowerTrench(R) MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003 (c)2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2010 Fairchild Semiconductor Corporation FDD850N10L Rev. C1 8 www.fairchildsemi.com FDD850N10L -- N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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