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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Diode
DAN222E SWITCHING DIODE
DESCRIPTION
Epitaxial planar Silicon diode
FEATURES:
High speed. (trr=1.5ns Typ.)
Suitable for high packing density layout
High reliability.
APPLICATION
Ultra high speed switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: N
-
N
+ +
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃
Parameter Symbol Limits Unit
Peak reverse voltage VRM 80 V
DC reverse voltage VR 80 V
Maximum (peak) forward current IFM 300 mA
Aver age forward cu rrent IO 100 mA
Power dissipation PD 150 mW
Junction temperature Tj 150 ℃
Storage temperature Tstg -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100µA 80 V
Reverse voltage leakage current IR V
R=70V 0.1
µA
Forward voltage VF IF=100mA
1.2 V
Diode capacitance CD V
R=6V, f=1MHz 3.5 pF
Reverse recovery time trr V
R=6V, IF=5mA 4
ns
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
1. ANODE
2. ANODE
3.CATHODE
Typical Characteristics DAN222E
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.010 0.090 0.000 0.004
b 0.230 0.330 0.009 0.013
b1
D 1.550 1.650 0.061 0.065
E 1.550 1.650 0.061 0.065
D2
E2
e
L
L1
L2
L3
L4
k
z 0.320 RE F. 0.013 RE F.
0.160 RE F. 0.006 RE F.
Symbol D imensions In M illimeters D imensions In Inches
1.000 TYP. 0.040 TYP.
0.750 RE F.
1.000 REF. 0.030 RE F.
0.040 RE F.
0.320 REF. 0.013 RE F.
0.230 RE F.
0.180 RE F.
0.280 RE F. 0.011 RE F.
0.250 RE F.
0.200 RE F.
0.009 RE F.
0.007 RE F.
0.010 RE F.
0.008 RE F.
