Ruttonsha International Rectifier Ltd. RUTTONSHA SILICON CONTROLLED RECTIFIERS 111RK SERIES Power Silicon Controlled Rectifiers 170 Amp RMS SCRs Types : 111RK10 TO 111RK160 111RK ... FEATURES v All diffused series. v International Standard Case TO-209 AC (TO-94). v Threaded studs UNF 1/2'' - 20 UNF 2A. v High di/dt and dv/dt capabilities. v Reliable blocking at elevated temperature. v High surge current rating 2700 A. v High I 2t capability 36400 A 2Sec. v Excellent dynamic characteristics. v Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling. THERMAL MECHANICAL SPECIFICATIONS R thjc Maximum thermal resistance junction to case 0.195K/W R thcs Contact thermal resistance case-to-sink 0.08K/W TJ Junction operating temp. range -40 0C to +125 0C T stg Storage temperature range -40 0C to +150 0C Mounting torque (Non-lubricated threads) 14.0Nm. Min. 15.5Nm. Max. Approximate weight 130 gms. UNIT:- M.M. ELECTRICAL RATINGS TYPE 111RK 10 20 40 60 80 100 120 140 160 V DRM Max. repetitive peak off state voltage (V) 100 200 400 600 800 1000 1200 1400 1600 V RRM Max. repetitive peak reverse voltage (V) 100 200 400 600 800 1000 1200 1400 1600 V RSM Max. non-repetitive peak reverse voltage (V) 150 300 500 700 900 1100 1300 1500 1700 I RM & I DM Max. peak reverse & off state current @ rated V DRM & V RRM 125 0C -mA 20 20 20 20 20 20 20 20 20 SILICON CONTROLLED RECTIFIERS 111RK SERIES ELECTRICAL SPECIFICATION ON-STATE CONDITION Parameter I T(AV) 111RK Max. average on-state current 110 @ case temperature 90 I T(RMS) Max. RMS on-state current 175 I TSM Max. peak one cycle non-repetitive surge current 2700 Units A 0 I t Maximum I t for fusing 2 36.4 2 kA 2s 25.8 I Maximum I 2t for fusing 364 V T(TO)1 Low level value of threshold voltage 0.90 V T(TO)2 High level value of threshold voltage 0.92 r t1 Low level value of on state slope resistance 1.79 r t2 High level value of on state slope resistance 1.81 V TM Max. on state voltage 1.52 IH Maximum holding current 300 IL Latching current 600 2 t 180 0C conduction, half sine wave C A 2270 Conditions k A 2s V m t = 10ms No voltage reapplied t = 10ms 100% V RRM reapplied t = 10ms No voltage reapplied t = 10ms 100% V RRM reapplied Sinusodial half wave, Initial T J = T J max. t = 0.1 to 10ms. No voltage reapplied. (16.7% x x I F(AV) < I < x I F(AV) ), T J = T J max. ( x I F(AV) < I < 20 x x I F(AV) ), T J = T J max. (16.7% x x I F(AV) < < x I F(AV) ), T J = T J max. ( x I F(AV) < I < 20 x x I F(AV) ), T J = T J max. V mA I pk = 350A, T J = 125 0C, t p = 10ms sine pulse T J = 25 0C, anode supply 12V resistive load TRIGGERING Parameter 111RK P GM Maximum peak gate power 5 P G(AV) Maximum average gate power 1 I GM Max. peak positive gate current 2.0 +V GM Max. peak positive gate voltage 20 -V GM Max. peak negative gate voltage 5.0 I GT DC gate current required to trigger V GT DC gate voltage required to trigger I GD DC gate current not to trigger V GD DC gate voltage not to trigger Units W Conditions T J = 125 0C, t p 5ms T J = 125 0C, f= 50Hz, d% = 50 A T J = 125 0C, t p 5ms V T J = 125 0C, t p 5ms TYP. MAX. 180 90 40 -150 -- mA T J = -40 0C T J = 25 0C T J = 125 0C 2.9 1.8 1.2 -3.0 -- V T J = -40 0C T J = 25 0C T J = 125 0C 10 0.25 mA V T J = 125 0C Max. required gate trigger / current / voltage are the lowest value which will trigger all units 12V anode-to-cathode applied. Max. gate current / voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied. SILICON CONTROLLED RECTIFIERS SILICON CONTROLLED RECTIFIERS SILICON CONTROLLED RECTIFIERS Last Update : July 2000