111RK SERIES
Power Silicon Controlled Rectifiers
170 Amp RMS SCRs
Types : 111RK10 TO 111RK160
FEATURES
vAll diffused series.
vInternational Standard Case TO-209 AC (TO-94).
vThreaded studs UNF 1/2’’ - 20 UNF 2A.
vHigh di/dt and dv/dt capabilities.
vReliable blocking at elevated temperature.
vHigh surge current rating 2700 A.
vHigh I2t capability 36400 A2Sec.
vExcellent dynamic characteristics.
vCompression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling.
THERMAL MECHANICAL SPECIFICATIONS
Rthjc Maximum thermal resistance
junction to case 0.195K/W
Rthcs Contact thermal resistance case-to-sink 0.08K/W
TJJunction operating temp. range -400C to +1250C
Tstg Storage temperature range -400C to +1500C
Mounting torque 14.0Nm. Min.
(Non-lubricated threads) 15.5Nm. Max.
Approximate weight 130 gms.
ELECTRICAL RATINGS
TYPE 111RK 10 20 40 60 80 100 120 140 160
VDRM Max. repetitive peak off state voltage (V) 100 200 400 600 800 1000 1200 1400 1600
VRRM Max. repetitive peak reverse voltage (V) 100 200 400 600 800 1000 1200 1400 1600
VRSM Max. non-repetitive peak reverse voltage (V) 150 300 500 700 900 1100 1300 1500 1700
IRM &Max. peak reverse & off state current
IDM @ rated VDRM & VRRM 1250C -mA 20 20 20 20 20 20 20 20 20
Ruttonsha International Rectifier Ltd.
RUTTONSHA SILICON CONTROLLED RECTIFIERS
111RK ...
UNIT:- M.M.
111RK SERIES
ELECTRICAL SPECIFICATION
ON-STATE CONDITION
Parameter 111RK Units Conditions
IT(RMS) Max. RMS on-state current 175
@ case temperature 90 0C
IT(AV) Max. average on-state current 110 A1800C conduction, half sine wave
ITSM Max. peak one cycle 2700 t = 10ms No voltage
non-repetitive surge current Areapplied
2270 t = 10ms 100% VRRM
reapplied Sinusodial half wave,
I2tMaximum I2t for fusing 36.4 t = 10ms No voltage Initial TJ = TJ max.
kA2sreapplied
25.8 t = 10ms 100% VRRM
reapplied
I2tMaximum I2t for fusing 364 kA2st = 0.1 to 10ms. No voltage reapplied.
VT(TO)1 Low level value of threshold voltage 0.90 V(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VT(TO)2 High level value of threshold voltage 0.92 (π x IF(AV) < I < 20 x π x IF(AV)), TJ = TJ max.
rt2 High level value of on state
slope resistance 1.81 (π x IF(AV) < I < 20 x π x IF(AV)), TJ = TJ max.
IHMaximum holding current 300 mA TJ = 250C, anode supply 12V resistive load
ILLatching current 600
rt1 Low level value of on state
slope resistance 1.79 mΩ(16.7% x π x IF(AV) < Ι < π x IF(AV)), TJ = TJ max.
VTM Max. on state voltage 1.52 VIpk = 350A, TJ = 1250C, tp = 10ms sine pulse
TRIGGERING
Parameter 111RK Units Conditions
-VGM Max. peak negative gate voltage 5.0 VTJ = 1250C, tp ≤ 5ms
PGM Maximum peak gate power 5WTJ = 1250C, tp ≤ 5ms
PG(AV) Maximum average gate power 1TJ = 1250C, f= 50Hz, d% = 50
IGM Max. peak positive gate current 2.0 ATJ = 1250C, tp ≤ 5ms
+VGM Max. peak positive gate voltage 20
TYP. MAX.
IGT DC gate current required to trigger 180 -- TJ = -400C
90 150 mA TJ = 250C
40 -- TJ = 1250C
VGD DC gate voltage not to trigger 0.25 VTJ = 1250C
IGD DC gate current not to trigger 10 mA
Max. required gate trigger / current /
voltage are the lowest value which will
trigger all units 12V anode-to-cathode
applied.
Max. gate current / voltage not to trigger is
the max. value which will not trigger any unit
with rated VDRM anode-to-cathode applied.
VGT DC gate voltage required to trigger 2.9 --TJ = -400C
1.8 3.0 VTJ = 250C
1.2 -- TJ = 1250C
SILICON CONTROLLED RECTIFIERS
SILICON CONTROLLED RECTIFIERS
SILICON CONTROLLED RECTIFIERS
SILICON CONTROLLED RECTIFIERS
Last Update : July 2000
