LM113, LM313 www.ti.com SNVS747A - SEPTEMBER 2011 - REVISED MAY 2013 LM113/LM313 Reference Diode Check for Samples: LM113, LM313 FEATURES DESCRIPTION * * The LM113/LM313 are temperature compensated, low voltage reference diodes. They feature extremelytight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature stability. 1 2 * * Low Breakdown Voltage: 1.220V Dynamic Impedance of 0.3 From 500 A to 20 mA Temperature Stability Typically 1% Over -55C to 125C Range (LM113), 0C to 70C (LM313) Tight Tolerance: 5%, 2% or 1% The characteristics of this reference recommend it for use in bias-regulation circuitry, in low-voltage power supplies or in battery powered equipment. The fact that the breakdown voltage is equal to a physical property of silicon--the energy-band gap voltage--makes it useful for many temperature-compensation and temperaturemeasurement functions. The diodes are synthesized using transistors and resistors in a monolithic integrated circuit. As such, they have the same low noise and long term stability as modern IC op amps. Further, output voltage of the reference depends only on highly-predictable properties of components in the IC; so they can be manufactured and supplied to tight tolerances. Schematic and Connection Diagram Figure 1. Metal Can Package See Package Number NDU 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright (c) 2011-2013, Texas Instruments Incorporated LM113, LM313 SNVS747A - SEPTEMBER 2011 - REVISED MAY 2013 www.ti.com Typical Applications Figure 2. Level Detector for Photodiode Solid tantalum. Figure 3. Low Voltage Regulator 2 Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM113 LM313 LM113, LM313 www.ti.com SNVS747A - SEPTEMBER 2011 - REVISED MAY 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings Power Dissipation (1) (2) (3) 100 mW Reverse Current 50 mA Forward Current 50 mA -65C to +150C Storage Temperature Range Lead Temperature (Soldering, 10 seconds) Operating Temperature Range (1) (2) (3) 300C LM113 -55C to+125C LM313 0C to +70C Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for LM113. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. For operating at elevated temperatures, the device must be derated based on a 150C maximum junction and a thermal resistance of 80C/W junction to case or 440C/W junction to ambient. Electrical Characteristics (1) Parameter Min Typ Max Units 1.160 1.220 1.280 V LM113-1 1.210 1.22 1.232 V LM113-2 1.195 1.22 1.245 V 6.0 15 mV IR = 1 mA 0.2 1.0 IR = 10 mA 0.25 0.8 Forward Voltage Drop IF = 1.0 mA 0.67 1.0 V RMS Noise Voltage 10 Hz f 10 kHz IR = 1 mA Reverse Breakdown Voltage Conditions LM113/LM313 Reverse Breakdown Voltage Change Reverse Dynamic Impedance IR = 1 mA 0.5 mA IR 20 mA Reverse Breakdown Voltage Change with Current 0.5 mA IR 10 mA TMIN TA TMAX Breakdown Voltage Temperature Coefficient 1.0 mA IR 10 mA TMIN TA TMAX (1) V 5 15 0.01 mV %/C These specifications apply for TA = 25C, unless stated otherwise. At high currents, breakdown voltage should be measured with lead lengths less than 1/4 inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances between 200 pF and 0.1 F, unless isolated by at least a 100 resistor, as it may oscillate at some currents. Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM113 LM313 3 LM113, LM313 SNVS747A - SEPTEMBER 2011 - REVISED MAY 2013 www.ti.com Typical Performance Characteristics 4 Temperature Drift Reverse Dynamic Impedance Figure 4. Figure 5. Reverse Characteristics Reverse Characteristics Figure 6. Figure 7. Reverse Dynamic Impedance Noise Voltage Figure 8. Figure 9. Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM113 LM313 LM113, LM313 www.ti.com SNVS747A - SEPTEMBER 2011 - REVISED MAY 2013 Typical Performance Characteristics (continued) Forward Characteristics Response Time Figure 10. Figure 11. Maximum Shunt Capacitance Figure 12. Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM113 LM313 5 LM113, LM313 SNVS747A - SEPTEMBER 2011 - REVISED MAY 2013 www.ti.com TYPICAL APPLICATIONS Figure 13. Amplifier Biasing for Constant Gain with Temperature Figure 14. Constant Current Source Adjust for 0V at 0C Adjust for 100 mV/C Figure 15. Thermometer 6 Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM113 LM313 LM113, LM313 www.ti.com SNVS747A - SEPTEMBER 2011 - REVISED MAY 2013 REVISION HISTORY Changes from Original (May 2013) to Revision A * Page Changed layout of National Data Sheet to TI format ............................................................................................................ 6 Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM113 LM313 7 PACKAGE OPTION ADDENDUM www.ti.com 3-Sep-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (C) Device Marking (3) (4/5) LM113H OBSOLETE TO NDU 2 TBD Call TI Call TI -55 to 125 LM113H LM113H/NOPB OBSOLETE TO NDU 2 TBD Call TI Call TI -55 to 125 LM113H (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. 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