LM113, LM313
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SNVS747A –SEPTEMBER 2011–REVISED MAY 2013
LM113/LM313 Reference Diode
Check for Samples: LM113,LM313
1FEATURES DESCRIPTION
The LM113/LM313 are temperature compensated,
2• Low Breakdown Voltage: 1.220V low voltage reference diodes. They feature extremely-
• Dynamic Impedance of 0.3ΩFrom 500 μA to 20 tight regulation over a wide range of operating
mA currents in addition to an unusually-low breakdown
• Temperature Stability Typically 1% Over −55°C voltage and good temperature stability.
to 125°C Range (LM113), 0°C to 70°C (LM313) The diodes are synthesized using transistors and
• Tight Tolerance: ±5%, ±2% or ±1% resistors in a monolithic integrated circuit. As such,
they have the same low noise and long term stability
The characteristics of this reference as modern IC op amps. Further, output voltage of the
recommend it for use in bias-regulation reference depends only on highly-predictable
circuitry, in low-voltage power supplies or in properties of components in the IC; so they can be
battery powered equipment. The fact that the manufactured and supplied to tight tolerances.
breakdown voltage is equal to a physical
property of silicon—the energy-band gap
voltage—makes it useful for many
temperature-compensation and temperature-
measurement functions.
Schematic and Connection Diagram
Figure 1. Metal Can Package
See Package Number NDU
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2011–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM113, LM313
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SNVS747A –SEPTEMBER 2011–REVISED MAY 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1)(2)
Power Dissipation (3) 100 mW
Reverse Current 50 mA
Forward Current 50 mA
Storage Temperature Range −65°C to +150°C
Lead Temperature (Soldering, 10 seconds) 300°C
Operating Temperature Range LM113 −55°C to+125°C
LM313 0°C to +70°C
(1) Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for
LM113.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) For operating at elevated temperatures, the device must be derated based on a 150°C maximum junction and a thermal resistance of
80°C/W junction to case or 440°C/W junction to ambient.
Electrical Characteristics (1)
Parameter Conditions Min Typ Max Units
Reverse Breakdown Voltage LM113/LM313 IR= 1 mA 1.160 1.220 1.280 V
LM113-1 1.210 1.22 1.232 V
LM113-2 1.195 1.22 1.245 V
Reverse Breakdown Voltage Change 0.5 mA ≤IR≤20 mA 6.0 15 mV
IR= 1 mA 0.2 1.0 Ω
Reverse Dynamic Impedance IR= 10 mA 0.25 0.8 Ω
Forward Voltage Drop IF= 1.0 mA 0.67 1.0 V
10 Hz ≤f≤10 kHz
RMS Noise Voltage 5 μV
IR= 1 mA
Reverse Breakdown Voltage Change with Current 0.5 mA ≤IR≤10 mA 15 mV
TMIN ≤TA≤TMAX
Breakdown Voltage Temperature Coefficient 1.0 mA ≤IR≤10 mA 0.01 %/°C
TMIN ≤TA≤TMAX
(1) These specifications apply for TA= 25°C, unless stated otherwise. At high currents, breakdown voltage should be measured with lead
lengths less than ¼ inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances
between 200 pF and 0.1 μF, unless isolated by at least a 100Ωresistor, as it may oscillate at some currents.
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LM113, LM313
SNVS747A –SEPTEMBER 2011–REVISED MAY 2013
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Typical Performance Characteristics
Temperature Drift Reverse Dynamic Impedance
Figure 4. Figure 5.
Reverse Characteristics Reverse Characteristics
Figure 6. Figure 7.
Reverse Dynamic Impedance Noise Voltage
Figure 8. Figure 9.
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LM113, LM313
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SNVS747A –SEPTEMBER 2011–REVISED MAY 2013
Typical Performance Characteristics (continued)
Forward Characteristics Response Time
Figure 10. Figure 11.
Maximum Shunt Capacitance
Figure 12.
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Product Folder Links: LM113 LM313
LM113, LM313
SNVS747A –SEPTEMBER 2011–REVISED MAY 2013
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TYPICAL APPLICATIONS
Figure 13. Amplifier Biasing for Constant Gain with Temperature
Figure 14. Constant Current Source
Adjust for 0V at 0°C
Adjust for 100 mV/°C
Figure 15. Thermometer
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LM113, LM313
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SNVS747A –SEPTEMBER 2011–REVISED MAY 2013
REVISION HISTORY
Changes from Original (May 2013) to Revision A Page
• Changed layout of National Data Sheet to TI format ............................................................................................................ 6
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PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM113H OBSOLETE TO NDU 2 TBD Call TI Call TI -55 to 125 LM113H
LM113H/NOPB OBSOLETE TO NDU 2 TBD Call TI Call TI -55 to 125 LM113H
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
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