PMBT2222AMYL - NEXPERIA - Datasheet.Live

PMBT2222AM

40 V, 600 mA NPN switching transistor

21 September 2018 Product data sheet

1. General description

NPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device

(SMD) plastic package.

PNP complement: PMBT2907AM

2. Features and benefits

•High current (max. 600 mA)

•Low voltage (max. 40V)

•Leadless ultra small SMD plastic package

•Low package height of 0.50 mm

•Power dissipation comparable to SOT23

3. Applications

•Switching and linear applications

•Mobile applications

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter

voltage

open base - - 40 V

ICcollector current - - 600 mA

ICM peak collector current single pulse; tp ≤ 1 ms - - 800 mA

VCE = 10 V; IC = 150 mA [1] 100 - 300 hFE DC current gain

VCE = 10 V; IC = 500 mA [1] 40 - -

[1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02

Nexperia PMBT2222AM

40 V, 600 mA NPN switching transistor

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 B base

2 E emitter

3 C collector

Transparent

top view

DFN1006-3

(SOT883)

sym021

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PMBT2222AM DFN1006-3 DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883

7. Marking

Table 4. Marking codes

Type number Marking code

PMBT2222AM M3

Product data sheet 21 September 2018 2 / 12

Nexperia PMBT2222AM

40 V, 600 mA NPN switching transistor

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 75 V

VCEO collector-emitter voltage open base - 40 V

VEBO emitter-base voltage open collector - 6 V

ICcollector current - 600 mA

ICM peak collector current - 800 mA

IBM peak base current

single pulse; tp ≤ 1 ms

- 200 mA

Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

Tj (°C)

-75 17512525 75-25

aaa-019152

100

200

300

Ptot

(mW)

FR4 PCB, standard footprint

Fig. 1. Power derating curve DFN1006-3 (SOT883)

Product data sheet 21 September 2018 3 / 12

Nexperia PMBT2222AM

40 V, 600 mA NPN switching transistor

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient

in free air [1] - - 500 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

006aab603

10-5 1010-2

10-4 102

10-1

tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle =

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

FR4 PCB, standard footprint

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. Characteristics

Table 7. Characteristics

Tamb = 25 °C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

V(BR)CBO collector-base

breakdown voltage

IC = 100 µA; IE = 0 A 75 - - V

V(BR)CEO collector-emitter

breakdown voltage

IC = 2 mA; IB = 0 A 40 - - V

V(BR)EBO emitter-base

breakdown voltage

IC = 0 A; IE = 100 µA 6 - - V

VCB = 60 V; IE = 0 A - - 10 nAICBO collector-base cut-off

current VCB = 60 V; IE = 0 A; Tj = 125 °C - - 10 µA

IEBO emitter-base cut-off

current

VEB = 5 V; IC = 0 A - - 10 nA

VCE = 10 V; IC = 100 µA 35 - -

VCE = 10 V; IC = 1 mA 50 - -

VCE = 10 V; IC = 10 mA 75 - -

VCE = 10 V; IC = 10 mA; Tamb = -55 °C 35 - -

VCE = 10 V; IC = 150 mA [1] 100 - 300

VCE = 1 V; IC = 150 mA [1] 50 - -

hFE DC current gain

VCE = 10 V; IC = 500 mA [1] 40 - -

Product data sheet 21 September 2018 4 / 12

Nexperia PMBT2222AM

40 V, 600 mA NPN switching transistor

Symbol Parameter Conditions Min Typ Max Unit

IC = 150 mA; IB = 15 mA [1] - - 300 mVVCEsat collector-emitter

saturation voltage IC = 500 mA; IB = 50 mA [1] - - 1 V

IC = 150 mA; IB = 15 mA [1] 0.6 - 1.2 VVBEsat base-emitter saturation

voltage IC = 500 mA; IB = 50 mA [1] - - 2 V

tddelay time - - 15 ns

trrise time - - 20 ns

ton turn-on time - - 35 ns

tsstorage time - - 200 ns

tffall time - - 60 ns

toff turn-off time

IC = 150 mA; IBon = 15 mA;

IBoff = -15 mA

- - 260 ns

Cccollector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 8 pF

Ceemitter capacitance VEB = 500 mV; IC = 0 A; ic = 0 A;

f = 1 MHz

- - 25 pF

fTtransition frequency VCE = 20 V; IC = 20 mA; f = 100 MHz [1] - 340 - MHz

[1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02

aaa-017357

300

600

900

hFE

IC (mA)

10-1 103

102

1 10

(1)

(2)

(3)

VCE = 10 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 3. DC current gain as a function of collector

current; typical values

VCE (V)

0 1084 62

aaa-017359

0.3

0.6

0.9

(A)

0.0

IB = 13 mA

11.7 mA

10.4 mA 9.1 mA

7.8 mA 6.5 mA

5.2 mA 3.9 mA

2.6 mA

1.3 mA

Tamb = 25 °C

Fig. 4. Collector current as a function of collector-

emitter voltage; typical values

Product data sheet 21 September 2018 5 / 12

Nexperia PMBT2222AM

40 V, 600 mA NPN switching transistor

aaa-017361

0.4

0.6

0.2

0.8

1.0

VBE

(V)

0.0

IC (mA)

10-1 103

102

1 10

(1)

(2)

(3)

VCE = 10 V

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 5. Base-emitter voltage as a function of collector

current; typical values

aaa-017362

0.6

0.8

0.4

1.0

1.2

VBEsat

(V)

0.2

IC (mA)

10-1 103

102

1 10

(1)

(2)

(3)

IC/IB = 10

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 6. Base-emitter saturation voltage as a function of

collector current; typical values

aaa-017363

IC (mA)

10-1 103

102

1 10

10-1

VCEsat

(V)

10-2

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 7. Collector-emitter saturation voltage as a

function of collector current; typical values

aaa-028776

IC (mA)

10-1 103

102

1 10

10-1

VCEsat

(V)

10-2

(1)

(2)

(3)

(4)

Tamb = 25 °C

(1) IC/IB = 100

(2) IC/IB = 50

(3) IC/IB = 20

(4) IC/IB = 10

Fig. 8. Collector-emitter saturation voltage as a

function of collector current; typical values

Product data sheet 21 September 2018 6 / 12

Nexperia PMBT2222AM

40 V, 600 mA NPN switching transistor

11. Test information

006aaa003

IBon (100 %)

input pulse

(idealized waveform)

IBoff

90 %

10 %

IC (100 %)

ton

90 %

10 %

output pulse

(idealized waveform)

toff

Fig. 9. Transistor switching time definition

DUT

mlb826

(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Fig. 10. Test circuit for switching times

Product data sheet 21 September 2018 7 / 12

Nexperia PMBT2222AM

40 V, 600 mA NPN switching transistor

12. Package outline

UNIT A1

max.

A(1) b b1e1

e L L1

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.50

0.46

0.20

0.12

0.55

0.47

0.03 0.62

0.55 0.35 0.65

DIMENSIONS (mm are the original dimensions)

Note

1. Including plating thickness

0.30

0.22

0.30

0.22

SOT883 SC-101 03-02-05

03-04-03

D E

1.02

0.95

0 0.5 1 mm

scale

Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883

Fig. 11. Package outline DFN1006-3 (SOT883)

Product data sheet 21 September 2018 8 / 12

Nexperia PMBT2222AM

40 V, 600 mA NPN switching transistor

13. Soldering

solder lands

solder resist

occupied area

solder paste

sot883_fr

1.3

0.3

0.6 0.7

0.4

0.9

0.3

(2×)

0.4

(2×)

0.25

(2×)

R0.05 (12×)

0.7

Dimensions in mm

Fig. 12. Reflow soldering footprint for DFN1006-3 (SOT883)

Product data sheet 21 September 2018 9 / 12

Nexperia PMBT2222AM

40 V, 600 mA NPN switching transistor

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PMBT2222AM v.1 20180921 Product data sheet - -

Product data sheet 21 September 2018 10 / 12

Nexperia PMBT2222AM

40 V, 600 mA NPN switching transistor

15. Legal information

Data sheet status

Document status

[1][2]

Product

status [3]

Definition

Objective [short]

data sheet

Development This document contains data from

the objective specification for

product development.

Preliminary [short]

data sheet

Qualification This document contains data from

the preliminary specification.

Product [short]

data sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the internet at https://www.nexperia.com.

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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Product data sheet 21 September 2018 11 / 12

Nexperia PMBT2222AM

40 V, 600 mA NPN switching transistor

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking.......................................................................... 2

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 4

10. Characteristics............................................................ 4

11. Test information.......................................................... 7

12. Package outline.......................................................... 8

13. Soldering..................................................................... 9

14. Revision history........................................................10

15. Legal information......................................................11

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 21 September 2018

Product data sheet 21 September 2018 12 / 12