OPTOELECTRONICS HERMETIC SILICON PHOTODARLINGTON ~ PACKAGE DIMENSION L-D ae SEATING PLANE A h AL - L ord 4 $T1333 SYMBOL INCHES MILLIMETERS NOTES MIN. | MAX. | MIN. | MAX. A 225 | 255 | 5.71 | 6.47 @b O16 | .021 | 407 | 533 D 209 | .230 | 5.31 | 5.84 D, 178 | .195 | 4.52 | 4.96 e 100 NOM 2.54 NOM 2 e@, .050 NOM 1.27 NOM 2 h = .030 = 76 j 036 | 046 | 92 | 1.16 k 028 | 048 | 71 | 122] 1 500 | | 127] a 45 [ 45 | 45 [ 45 3 (Collector connected to case) 28 ST1606 NOTES: 1, MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021 (.533mm) MEASURED IN GAUGING PLANE .054 + .001 .000 (137 + .025 .000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007 (.778mm) THEIR TRUE POSITION RELATIVE TO A MAXIMUM WIDTH TAB. 3, FROM CENTERLINE TAB. L14F1/2 _ DESCRIPTIO The L14FX is a silicon photodarlington mounted ina narrow angle, TO-18 package. | m@ Hermetically sealed package m Narrow reception angle ae HERMETIC SILICON PHOTODARLINGTON OPTOELECTRONICS Storage Temperature ... 6.0 eee erent nee 65C to +150C Operating Temperature .. 0... een tet eee teen ee eens 65C to +125C Soldering: Lead Temperature (Iron) 20.0.0... cece cette tenet etre benneeeas 240C for 5 sec.9456 Lead Temperature (Flow) ........0.0 000002. c cece eee eee eee 260C for 10 sec.**" Collector-Emitter Breakdown Voltage .... 0... eet et tent t ees 25 Volts Collector-Base Breakdown Voltage .........0.. 060 eee eee e ete eens 25 Volts Emitter-Base Breakdown Voltage 2.0.00. ccc ree tet nt tntteee nn e ened 12 Volts Power Dissipation (Ty = 25C) 2. eee nett teen e nett eet eees 300 mw" Power Dissipation (Te = 25C) oo. 0. nee een n teen teenie 600 mW PARAMETER SYMBOL . . . TEST CONDITIONS Collector-Emitter Breakdown BV ceo Vv |; = 10 mA, Ee = 0 Emitter-Base Breakdown BV:s0 Vv I = 100 V, Ee =0 Collector-Base Breakdown BV cao Vv lk = 100 vA, Ee = 0 Collector-Emitter Leakage loco nA Vee = 12 V, Ee = 0 Reception Angle at 12 Sensitivity 8 + : Degrees On-State Collector Current L14F1 locony : mA Ee = .05 mW/em, Vip = 5 V? On-State Collector Current L14F2 loon : mA Ee = .05 mW/cm?, Voz = 5 V Rise Time us le = 10 MA, Voc = 10 V, R, = 1000, Fall Time us Ic = 10 MA, Vcc = 10 V, R, = 1000, ana a Derate power dissipation linearly 3.00mW/C above 25C ambient. . Derate power dissipation linearly 6.00mW/C above 25C case. ARMA flux is recommended. Methanol or lsopropy! alcohols are recommended as cleaning agents. Soldering iron tip Vie" (1.6 mm) minimum from housing. As long as leads are not under any stress or spring tension. . Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. . Figure 1 and figure 2 use light source of tungsten lamp at 2870K color temperature. A GaAs source of 0.05 mW/cnr is approximately equivalent to a tungsten source, at 2870K, of 0.2 mW/crr. PNAMAN> OPTOELECTRONICS HERMETIC SILICON PHOTODARLINGTON 19 -- 100 Zo mw/om? 8; qj a a a a at 2 4+ a. 5 2.0 $$} | w 2 2 a) x a oO i z 19 i 3 10 4. 4 6 12 +. { bk 5 _+ + 6 x . Ww . 2 Vf ae _ J > 4-1 { | a 5 Ye ri 2 mw 2b 4 2 oll rT * op | 4 1.0 o 9% tt Ver = 5V |__| = : & 8 LA Hos .2mW/em2 | 77 o aw O6F- 7 , oo 04 2 a NORMALIZED To: | = + Voe= 5V 2 | f at Ee = .2mW/cm? ol. | | Og 5 10 15 20 25 30 35 "-50 -25 25 50 75 100125 Vee + COLLECTOR TO EMITTER - VOLTS T - TEMPERATURE ~ C $71072 $1T1077 Fig. 1. Light Current vs. Collector to Emitter Voltage Fig. 2. Relative Light Current vs. Ambient Temperature 1.0 110 - ro og 100 ff rm 50 Ml 3 YETI {|| oa 07 w 80 b YT 3 [ & EO = a 4 0.6 \ 5 | = YY \ = 60 505 4 | a V wl 50 70.4 TV = wt Wa 440 > ff K 5 = 0.3 be iw a \ 30 0.2 ** 20 Ol 10 #00600. 600.700. 800. 900. 1000. 11001200 Os0 70-50" =39 <i9" 10* ~~ S0"OGCTOP BOF X- WAVELENGTH - NANOMETERS DEGREES . $71073 . ST1076 Fig. 3. Spectral Response Curve Fig. 4. Angular Response 100 r 7 t Xx LOAD RESISTANCE oo oe | Yoo TTT T Tt NORMALIZED To: \ \ RL = 1008 q t N IL = 10mA Veco Lov 9 | N 1002 LI4F s90% t x Ww ouTPuT nn \ INPUT e LE-86 Ns PULSE 2 [ | X 10% & T LEO | | | | | 5 | | \\ 10008 3 10 + sta] ste = TESR_ ourPuT ly te ey bate a | VY LL t, | | Veg = 1OV J \ Jinput PULSE | { { = ton= tat tr torr = te + te | | ST1074 Ob or ol LO 10 100 RELATIVE SWITCHING SPEED tat tr + ts + te $T1075 Fig. 5. Test Circuit and Voltage Waveforms Fig. 6. Light Current vs. Relative Switching Speed 3-171