# NPN PNP 2N60342N6037 2N60352N6038 2N60362N6039 @ PLASTIC DAR LINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. o High DC Current hFE = 2000 o Gain- (Typ) Collector-Emitter VCEO(Sus) @ Forward @ !C = 2.OAdc Sustaining Voltage - @ 100 mAdc = 40 Vdc (Min) - 2N6034, 2N6037 = 60 Vdc (Min) - 2N6035, 2N6038 =80 - 2N6036, 2N6039 Vdc (Min) Biased Second Breakdown Current Capability Isjb = 1.5 Adc @'25 Vdc o Monolithic Construction Resistors to Limit o Space-Saving with Built-In Base-Emitter Leakage Multiplication High Performance-to-Cost Ratio Case 77 Plastic Package *MAXI MUM'RATINGS Rating Collector-Emitter o Cot lector-Base Emitter-Base Collector Symbol Voltage Voltage Voltage Current 2N6037 VCEO 40 VCB 40 VE6 - Continuous Ic Peak 1 Base Current IB, Total Device Dissipation 2N60~$j 60 ,;$ Total Device Dissipation ..?:\tlk::$+$ ,~+ " loo-- @ Tc = 25C 40 -- 0.32-- @ TA = Z5C Derate above 25C Operating 60;? -'"'''!*:O.O -- \a , .... ~ 4.0 -- .J.s c `.!'~'~ `" ~l~t: s ,,.. $ ,.,., 8.0 -- ,. .- Derate above 25C I and Storage Junction Character~f~~> Thermal Resistance,Ju"R~~~~o Thermal Resistan,&&j~'ti'*ion * Ind icates J E Q~.,C ~~~tered g%f "'*&av l--l.5-- ,, g $I --o.o12-- `$ ~:<i ` Case to Ambient ,t;~~:&9 ,.:,,> ~\J {3'80 80 I Unit C Vd C Vdc Adc mAdc 4 Watts Wloc Watts Wloc Oc --45to+150-- Symbol Max Unit eJc 3.12 Oclw eJA I 4 Vd 83.3 Ocm Data. N ~~ HEAT SINK CONTACTAREA (BOTTOM) DIM A B c D E F G H J K L M N P T, TEMPERATURE (C) M INCHES MILLIMETERS MIN MAX MIN MAX 0.295 0.305 7.490 7,750 0,095 0.105 2,410 2.670 0,425 0.435 10,800 11,050 0.020 0.026 0,508 0.B60 0.145 0.155 3,680 3.940 0,093 TP 2.360 TP 0.025 0.035 0.635 0.889 0,148 0.158 3.780 4.010 0.115 0.118 2.920 3.000 0,595 0.645 15.110 16.380 0.015 0.025 0.381 0.635 30 Typ 30 Typ 0.045 I 0.055 0,085 0.095 1.140 I 1.400 2.160 2.410 CASE 77-03 B .. ,., ,: ... , i , . *ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise Characteristic noted) Svmbol I Min Max 500 -- Unit I IFF CHARACTERISTICS 2ollector-Emitter (Ic = 100 Sustaining mAdc, >ollectOr-Cutoff (VCE vcEo(sus} Voltage IB =0) 2N6034, 2N6035, 2N6038 2N6036, 2N6039 IB =0) 2N6034, 2N6037 lB=O) 2N6035, 2N6038 2N6036, 2N6039 Current = 20 Vdc, (vCE=30vdc, (vcE=40vdC,lB=O) ;ollector Cutoff Current (VCE = 40 Vdc, vBE(Off] = 1.5 Vdc) 2N6034, 2N6037 (VCE = 60 Vdc, vBE(~ff) = 1.5 Vdc) 2N6035, 2N6038 (VCE = 80 Vdc, vBE(Off) = 1.5 Vdc) 2N6036, 2N6039 (VCE =40 vBE(Off) = 1.5 Vdc 2N6034, 2N6037 vBE(Off) = 1.5 Vdc 2N 6035, 2N6038 vBE(~ff) = 1.5 Vdc 2N6036, 2N6039 TC Vdc, = 125C) (VCE =60 Tc Vdc, = 125C) (VCE = 80 Vdc, Tc = 125C) :ollector Cutoff Current (VCB '40 Vdc, IE =0] 2N6034, 2N6037 (VCB =60 Vdc, IE = 0] 2N6035, 2N6038 =80 Vdc, IE = O) 2N6036, 2N6039 (VCB !mitter Cutoff (VBE IN 2N6037 = 5.0 Current Vdc, IC = O) CHARACTERISTICS ;$y~ (Ic = 0.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC VCE'= 3.0 Vdc) = 4.0 Adc, Coil ectOr-E mitter (Ic = 2.O Adc, (Ic = 4.O ion Voltage IB = 8.0 ,,$:> Saturation ~.*>l,$ `.' :.*.<f:,w.s.. VO [tage . ":'.,,. .~.k' .. .$~.t-.' .. :*\. ..,. *,;*~:1 ,. , ,Jti. ,(:$, ~<f,, ",,\,,..\\~\,,.~~ ),* .,..y~x *" :;/c..:j<:y%~,, Base-Emitter On Voltage (1C = 2.0 Adc, DYNAMIC - Bandwidth = 0.75 Output (VCB indicates = 3.0 Vdc) CHARACTERISTICS Current~ain (IC VCE Adc, VCE JEDEC *$.. = 10 Vdc,$ 15,000 vCE(~t) o Vdc -- 2.0 -- 3.0 vBE(~t) -- 4.0 Vdc VBE(On) -- 2.8 Vdc fT 25 -- ., }... PrOduct~.$,*+~~$' MHz = ltQ MHz) s,:..,,:. ,,$,~:~ .,l\<$.\ .,.?,. s.> Capacitance = 10 Vdc, . -- I 100 \.::?:J\i;,x ,. .,.,j. Adc, IB =40 mAdc) = 4.0 ` 750 ~,,. mAdc} Adc, [B =40 mAdc) Base-Emitter (Ic Saturat ,.X * . ~';:,~'$'~ ~.::,.,+.,.,.+ .?" ~~:k.. ..~,:,,,,,.k:+ `.:&$ ,. ., . I E =0, f,m=$:l @Z) .,t.s'fi. `~i~.'. *V.;:':': ,...$. :) Cob pF 2N6034, 2N6035, 2N6036 -- 200 2N 6037, 2N6038, 2N6039 -- 100 ~,~iste'~~ata. FIGURE TIMES 3 - SWITCHING 4.0 2.0 m ~ ~ 1.0 z C 0.8 ~- 0.6 "2"H25"S tr, tf <lOns OUTY CYCLE= 1.0% for td andtr, 01 isdisconnected For NPN lest circuit,reverssdiode, polarities and input pulses. . . U.z L 0.04 ,, I I I MOTOROLA Semiconductor I II ,., ," J 0.06 0.1 I I 0.2 fc, COLLECTOR I ,L~ Fd 0.4 a"d"2=0RBa"dRcarevaried tn obtaind;siredtest currents Products kl I 0.4 0.6 CURRENT Enc. I I II 1.0 (AMP) I I IN I I 2.0 I 4,0 FIGURE 101 0.7 , , I I I I ! 1 [ 1 1 1 I I I I I I I I 1 1 ! , 1 , I , 4 - THERMAL I I I I , RESPONSE [ 1 II L , 5n VCE, COLLECTOR-EMITTERVOLTAGE (VOLTS) FIGURE 7 - CAPACITANCE ,J~$~$&~@ two limitations on the power handling ability of a trq~:~$~~i average junction temperature and second breakdown. ,,l:&j$':qperating area curves indicate I c - VCE limits of the tran$~~m that must be observed for reliable operation; i.e., the transistor &ust not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on TJ(pk) = 1 So"c; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to' 10% provided TJ(Dk) < 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce tha power that can be handled to values less than the limitations imposed by second breakdown. {See AN-415). VR, REVERSEVOLTAGE (VOLTS) m MOTOROLA Semiconductor Products Inc. PNP 2N6035, 2N6034, 2N6036 11- FIGURE lc, CO LLECTOR NPN 2N6036, 2N6037, [ TEMPERATURE 2N6039 COEFFICIENTS CUR RENT (AMP) FIGURE 12 - COLLE( 105 I =REVERSE ] 04 I I vcE=30v 103 I I 1 [ I Y , , t I Y /1 102 A /1 1, / .Y , , , r /1 /1 /[ /1 I I I I I I I ~ si ,,1), ,T..3 I / VBE, BASE EMITTER VOLTAGE NPN {VOLTS) Collector 2N6037 2N6038 1 I I Base o I I I = 8.0 k I L--- ---- I =60 ____ .__J 0 Emitter MOTOROLA @ Emitter Semiconductor PrwducZs inc. a