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PLASTIC DAR LINGTON COMPLEMENTARY
SILICON POWER TRANSISTORS
designed forgeneral-purpose amplifier and low-speed switching
...
applications.
oHigh DC Current Gain–
hFE =2000 (Typ) @!C =2.OAdc
oCollector-Emitter Sustaining Voltage –@100 mAdc
VCEO(Sus) =40 Vdc (Min) –2N6034, 2N6037
=60 Vdc (Min) –2N6035, 2N6038
=80 Vdc (Min) –2N6036, 2N6039
@Forward Biased Second Breakdown Current Capability
Isjb =1.5 Adc @’25 Vdc
oMonolithic Construction with Built-In Base-Emitter
Resistors to Limit Leakage Multiplication
oSpace-Saving High Performance-to-Cost Ratio
Case 77 Plastic Package
*MAXI MUM’RATINGS
oRating Symbol 2N6037 2N60~$j ,t;~~:&9
Collector-Emitter Voltage VCEO 40 60 ,.:,,>
~\J{3’80
Cot lector-Base Voltage VCB 40 ,;$ 60;? 80
Emitter-Base Voltage VE6 -’”’’’!*:O.O—
\a,
....
Collector Current –Continuous Ic ~4.0—
Peak .J.s c‘.!’~’~‘“
~l~t:
s..$,.,., 8.0 —
1,. ,, .-
Base Current IB, ,~+ “
..?:\tlk::$+$ loo—
Total Device Dissipation @Tc =25°C 40 —
Derate above 25°C 0.32—
Total Device Dissipation @TA =Z5°C ,,
g%f “’*&av l—l.5—
IDerate above 25°C g$- I—o.o12—
Operating and Storage Junction ‘$
~:<i —45to+150—
-I
4
Unit
Vd C
Vd C
Vdc
Adc
4
mAdc
Watts
Wloc
Watts
Wloc
Oc
Character~f~~> ‘Symbol Max Unit
Thermal Resistance,Ju”R~~~~o Case eJc 3.12 Oclw
Thermal Resistan,&&j~’ti’*ion to Ambient eJA 83.3 Ocm
*Ind icates JEQ~.,C~~~tered Data.
T, TEMPERATURE(°C)
PNP NPN
2N60342N6037
2N60352N6038
2N60362N6039
I
NB
~~
HEAT SINK
CONTACTAREA M
(BOTTOM)
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A0.295 0.305 7.490 7,750
B0,095 0.105 2,410 2.670
c 0,425 0.435 10,800 11,050
D 0.020 0.026 0,508 0.B60
E0.145 0.155 3,680 3.940
F0,093TP 2.360TP
G0.025 0.035 0.635 0.889
H0,148 0.158 3.780 4.010
J0.115 0.118 2.920 3.000
K0,595 0.645 15.110 16.380
L0.015 0.025 0.381 0.635
M30Typ 30 Typ
N0.045 I0.055 1.140 I1.400
P0,085 0.095 2.160 2.410
CASE 77-03
.. ...
,., ,
,: i,
.
*ELECTRICAL CHARACTERISTICS (Tc =25°C unless otherwise noted)
Characteristic ISvmbol Min Max Unit I
IFF CHARACTERISTICS
2ollector-Emitter Sustaining Voltage
(Ic =100 mAdc, IB =0) 2N6034, 2N6037
2N6035, 2N6038
2N6036, 2N6039
>ollectOr-Cutoff Current
(VCE =20 Vdc, IB =0) 2N6034, 2N6037
(vCE=30vdc, lB=O) 2N6035, 2N6038
(vcE=40vdC,lB=O) 2N6036, 2N6039
;ollector Cutoff Current
(VCE =40 Vdc, vBE(Off] =1.5 Vdc) 2N6034, 2N6037
(VCE =60 Vdc, vBE(~ff) =1.5 Vdc) 2N6035, 2N6038
(VCE =80 Vdc, vBE(Off) =1.5 Vdc) 2N6036, 2N6039
(VCE =40 Vdc, vBE(Off) =1.5 Vdc
TC =125°C) 2N6034, 2N6037
(VCE =60 Vdc, vBE(Off) =1.5 Vdc
Tc =125°C) 2N 6035, 2N6038
(VCE =80 Vdc, vBE(~ff) =1.5 Vdc
Tc =125°C) 2N6036, 2N6039
:ollector Cutoff Current
(VCB ’40 Vdc, IE =0] 2N6034, 2N6037
(VCB =60 Vdc, IE =0] 2N6035, 2N6038
(VCB =80 Vdc, IE =O) 2N6036, 2N6039
!mitter Cutoff Current
(VBE =5.0 Vdc, IC =O)
IN CHARACTERISTICS
vcEo(sus}
I—
(Ic =0.5 Adc, VCE =3.0 Vdc) ;$y~ ,.X
*
~’$’~.500 —
(IC =2.0 Adc, VCE =3.0 Vdc) ~’;:, ~.::,.,+.,.,.+.?”
~~:k.. 750 15,000
(IC =4.0 Adc, VCE’= 3.0 Vdc) ‘.:&$
,...~,:,,,,,.k:+
., . 100
CoilectOr-E mitter Saturat ion Voltage ,,$:> ‘vCE(~t) Vdc
(Ic =2.O Adc, IB =8.0 mAdc} ~,,. 2.0
(Ic =4.O Adc, [B =40 mAdc)
—
\.::?:J\i;,x
,. .,.,j. —3.0
Base-Emitter Saturation VO [tage ~.*>l,$ ‘.’
:.*.<f:,w.s.. vBE(~t) —4.0 Vdc
(Ic =4.0 Adc, IB =40 mAdc) .“:’.,,. .~.k’..
.$~.t-.’.. :*\.
..,.
Base-Emitter On Voltage *,;*~:1,. ,
,Jti. VBE(On)
,(:$,~<f,, 2.8
(1C =2.0 Adc, VCE =3.0 Vdc)
—
“,,\,,..\\~\,,.~~Vdc
),* .,..y~x*“
DYNAMIC CHARACTERISTICS :;/c..:j<:y%~,,
.*$.. ., }...
Current~ain –Bandwidth PrOduct~.$,*+~~$’ fT 25 —MHz
(IC =0.75 Adc, VCE =10 Vdc,$ =ltQ MHz)
Output Capacitance s,:..,,:.
,,$,~:~.,l\<$.\.,.?,.s.> Cob
(VCB =10 Vdc, IE=0, f,m=$:l @Z) 2N6034, 2N6035, 2N6036 pF
.,t.s’fi.‘~i~.’.*V.;:’:’:
—200
2N 6037, 2N6038, 2N6039
,...$. :) —100
●indicates JEDEC ~,~iste’~~ata.
“2”H25”S a“d”2=0RBa”dRcarevaried
for td andtr, 01 isdisconnected
tr, tf <lOns tn obtaind;siredtestcurrents
OUTY CYCLE= 1.0% ForNPN lest circuit,reverssdiode,
polarities and input pulses.
,, I
FIGURE 3 – SWITCHING TIMES
4.0
2.0
m
~
~1.0
z
C0.8
~- 0.6
0.4
. .
Fd III I II I I I
U.z L
0.04 J,., ,“ IIkl I I I II IN II
0.06 0.1 0.2 0.4 0.6 1.0 2.0 4,0
fc, COLLECTOR CURRENT (AMP)
,L~
MOTOROLA Semiconductor Products Enc.
o
FIGURE 4 – THERMAL RESPONSE
101 , , I I I I 1! , 1, I , I I I I , [ L,
I!1[1 1 1 11II
0.7 II I I I I I
5n
,J~$~$&~@ two limitations on the power handling ability of a
trq~:~$~~i average junction temperature and second breakdown.
,,l:&j$’:qperating area curves indicate Ic – VCE limits of the tran-
$~~m that must be observed for reliable operation; i.e., the transistor
&ust not be subjected to greater dissipation than the curves indicate.
The data of Figures 5and 6is based on TJ(pk) =1So”c; TC is
variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to’ 10% provided TJ(Dk) <150°C. TJ(pk)
may be calculated from the data in Figure 4. At high case tempera-
tures, thermal limitations will reduce tha power that can be handled
to values less than the limitations imposed by second breakdown.
{See AN-415).
mMOTOROLA
VCE, COLLECTOR-EMITTERVOLTAGE (VOLTS)
FIGURE 7 – CAPACITANCE
VR, REVERSEVOLTAGE (VOLTS)
Semiconductor Products Inc.
PNP
[
NPN
2N6034, 2N6035, 2N6036 2N6037, 2N6036, 2N6039
FIGURE 11– TEMPERATURE COEFFICIENTS
lc, COLLECTOR CUR RENT (AMP)
FIGURE 12 – COLLE(
105 I
=REVERSE
]04
IIIYA/[ II,T..3
103 vcE=30v /1
,1,
I I ,/Y/1 si I
,I~,,1),
t, .
,III
1[IY/1 rI
102 /1 /1 /
VBE, BASE EMITTER VOLTAGE {VOLTS)
Emitter
NPN Collector
2N6037
2N6038 1
I
I
Base oI
I
I=8.0 k=60 I
I
L–— —— ____ .__J
0
Emitter
@MOTOROLA Semiconductor PrwducZs inc.
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●
a
