RAYTHEON/ SEMICONDUCTOR ay Def) 7597360 coossos o a 7597360 RAYTHEON. SEMICONDUCTOR 94D 05505 D - so 2 - Product Specifications / 27 Small Signal Transistors . GB PNP Medium Current General Purpose Amplifiers and Switches Description General purpose medium power amplifier and switch, useful up to 500mA. The NPN comple- ment is the CB. Dimensions Die Size: 21 x 21 mils Bonding Pad Size: Base 4 mil diameter Emitter 4 mil diameter Popular Types 2N2907A/JAN 2N2906A/JAN 2N2905A/JAN 2N2904A/JAN Raytheon Company 350 Ellis Street isi Mountain View, CA 94039-7016 Semiconductor Division ( 415) 968-9211 TWX: 910-379-6484 65-1006B 4/85RAYTHEON/ SEMICONDUCTOR GB PNP qu Def 7597360 oo0550b 1 W732 Medium Current General Purpose Amplifier & Switch Electrical Characteristics (+25C ambient temperature unless otherwise stated) 2N2804A/JAN 2N2905A/JAN Parameter | Conditions 2N2906A/JAN 2N2907A/JAN Units Min Typ Max | Min Typ Max BVcEo Ic = 10mA, Ig = 0 -60 | -88 -60 | -82 V BV ceo Io = 10pA, Ie = 0 ~60 | -110 -60 | -105 V BVEgo le = -10uA, Ic = 0 -5 | -78 -5 | -78 V Ico le = 0, Vep = -50V 0.01; 50 0.01 | 50 nA IcBo le = 0, Veg = -50V, Ta = 150C 0.03 | 10 0.03 | 10 BA lEBO Ic = 0, Veg = -3.5V 0.01 | 50 0.01 nA Hre Ic = 100uA, Vee = -10V 40 80 75 | 190 Hee Ic = mA, Voce = -10V 40 90 75 | 100 | 210 | 450 Hre Io = 1mA, Ve = -10V, Ta = -55C 20 40 50 100 Hee Ic = 10mMA, Veg = -10V 40 95 100 | 220 Hee Ic = 150mA, Veg = -10V 40 85 | 120 | 100 | 195 | 300 Hee Ic = 500mA, Vee = -10V 40 65 50 | 100 hfe(ac) Ic = 1mA, Voce = -10V, Freq = 1kHz 40 | 100 100 | 230 hfe Ic = 50mA, Vee = -20V, 2 3.2 2 3.4 Freq = 100MHz VcE(SaT) Ic = 150mA, Ip = 15mA -0.25 | -0.4 -0.2 | -04 V VcE(SAT) Ic = 500mA, Ip = 50mA -0.6 | -16 ~0.54 | -1.6 V VBE(SAT) Ic = 150mA, Ip = 15mA -0.88 | -13 -0.88 | -13 V VBE(SAT) Ic = 500mA, Ip = 50mA -1.0 | 26 -10 | -26 V Cob Vog = -10V, Ie = 0 6 8 6 8 pF Cin Veg = -2V, Ip = 0 17 30 17 30 pF ton Ic = 150mA, |pi = 15mA (see Fig. 1) 18 45 18 45 n& tott Io = 150mA, [py = Igo = 15mA 135 | 300 135 | 300 ns (see Fig. 2) The information contained in this data sheet has bean carefully compiled; however, it shall not by implication or otherwise become part of the terms and conditions of any subsequent sale. Raytheons liability shail be determined solely by its standard terms and conditions of sale. No representation as to application or use or that the circuits are either licensed or free from patent infringement is intended or implied. Raytheon reserves the right to change the circuitry and other data at any time without notice and assumes no lfiability for inadvertent errors. Raytheon 2RAYTHEON/ SEMICONDUCTOR 14 DE 7597340 o005507 3 [ T-SI-/7 Low Level, General Purpose Amplifiers & Switches GB PNP GB Single Transistors Electrical Parameters @ +25C Ambient Temperature BVcpp | BVceo | BVeso | Hee @to/Vce [Veesan @ ic/ls| of | Coo} ton | tore Product Min Min Min Min/ Valts MHz! pF i aS | ns Type Pkg. {@ 10uA| @10mA} @10uA| Max | mA/V | Max} mA/mA | Min | Max) Max | Max 2N721 T0-18 50 35 5 20/45 |150/10] 1.5] 150/15 | 50 | 45 2N722 T0-18 50 35 5 30/90 }150/10} 1.5 | 150/15 | 60 | 45 2N722A T0-18 50 35 5 30/90 | 150/10) 0.5 | 150/15 | 60 | 40 2N1131 T0-5 50 35 5 20/45 }150/10] 1.5 | 150/15 | 50 | 45 2N1131J T0-5 50 40 5 20/45 | 150/10] 1.5 | 150/15 | 50 | 45 QNTI31A T0-5 60 40 5 20/45 | 150/10] 1.5 | 150/15; 50 | 30 | 45 | 35 2N1132 T0-5 50 35 5 30/90 | 150/10] 15 | 150/15; 60 |) 45 2N1132J T0-5 50 40 5 30/90 }150/10] 1.5 | 150/15 | 60 | 45 2N1132A T0-5 60 40 5 20/45 |150/10| 1.5 | 150/15 | 50 ; 30 | 45 | 35 2N2904 70-5 60 40 5 40/120 |150/10| 0.4 | 150/15 | 200] 8 45 | 300 2N2904J,TX,V T0-5 60 40 5 40/120 | 150/10; 0.4 | 150/15 | 200| 8 45 | 300 2N2904A T0-5 60 60 5 40/120 | 150/10} 0.4 | 150/15 | 200 | 8 45 | 300 2N2Q04AN,TX.V | TO-5 60 60 5 40/120 | 150/10} 0.4 | 150/15 | 200] 8 45 | 30 2N2905 70-5 60 40 5 100/300} 150/10] 0.4 | 150/15 | 200] 8 45 | 300 2N2905J,TX,V 70-5 60 40 5 100/300} 150/10] 0.4 | 150/15 | 200 | 8 45 | 300 2N2905A 70-5 60 60 5 100/300| 150/10] 0.4 | 150/15 | 200] 8 45 | 300 2N2905AU,TX,V | TO-5 60 60 5 100/300/150/10] 0.4 | 150/15 | 200] 8 45 | 300 2N2906 T0-18 60 40 5 40/120 {150/10| 0.4 | 150/15 | 200] 8 45 | 300 2N2906J,TX,V | TO-18 60 40 5 40/120 }150/10} 0.4 | 150/15 | 200 | 8 45 | 300 2N2906A T0-18 60 60 5 40/120 1150/10! 0.4 | 150/15 | 200] 8 45 | 300 2N2906AN,TX,V | TO-18 60 60 5 40/120 } 150/10! 0.4 | 150/15 } 200] 8 45 | 300 2N2907 T0-18 60 40 5 100/300} 150/10; 0.4 | 150/15 | 200; 8 45 } 300 2N29075,TX,V | TO-18 60 40 5 100/300} 150/10] 0.4 | 150/15 | 200 | 8 45 | 300 2N2907A T0-18 60 60 5 100/300|150/10| 0.4 | 150/15 | 200] 8 45 | 300 2N2907AU,TX,V | TO-18 60 60 5 100/300|150/10| 0.4 | 150/15 | 200] 8 45 | 300 2N3133 T0-5 50 35 4 40/120 |150/10| 0.6 | 150/15 | 200 | 10 | 75 | 150 2N3134 T0-5 50 35 4 100/300|150/10| 0.6 | 150/15 | 200 | 10 | 75 | 150 2N3135 T0-18 50 35 4 40/120 |150/10/ 0.6 | 150/15 | 200 | 10 | 75 | 150 2N3136 T0-18 50 35 4 100/300|150/10| 0.6 | 150/15 | 200 | 10 | 75 | 150 2N3494 T0-5 80 80 45 40/ | 50/10} 03] 10/1 | 2001 7 | 300] 1000 2N3502 T0-5 45 45 5 100/300} 150/10} 0.4 | 150/15 | 200 | 8 40 | 100 2N3503 : T0-5 60 60 5 100/300] 150/10 | 0.4 | 150/15 | 200 | 8 40 | 100 2N3504 T0-18 45 45 5 100/300} 150/10 | 0.4 | 150/15 | 200 | 8 40 | 100 2N3505 TO-18 60 60 5 100/300] 150/10 | 0.4 | 150/15 | 200 | 8 40 | 100 2N4036 T0-5 90 65 7 40/140 |150/1010.65} 150/15 | 60 | 30 | 110 | 700 2N4037 T0-5 60 4 7 50/250 }150/10| 1.4 | 150/15 | 60 | 30RAYTHEON/ SEMICONDUCTOR GB PNP Medium Current Genera! Purpose Amplifier & Switch qy DE fj 7597360 goossoa s Z T-39-17 GB Dual Transistors [ Electrical Parameters @+25C Ambient Temperature BYcgq| BVceo} BVeso Min} Min | Min | Hee @ Ic/Vce | Matching | Voeisar) @ Ie/t/Vecjsar) @ Ie/ta | fk | Con | NF Product @| @|@ Min/ Hee | Vee} Volts | ip/lg | Volts| Ig/lg | MHz} pF | dB Type Pkg. 102A) 10mA] 10uA} Max | mA/V } % | mV] Max | mA/mA) Max | mA/mA | Min | Max} Max 2N2802 T0-78| 25 | 20 5 | 20/200] 1/5 |10} 5] O5 ; 10/1 | 09] 10/1 | GEO] 8 | 4 2N2803 T0-78| 25 | 20 5 | 20/200| 1/5 |20 | 10} O05 | 10/1 | O09 | 10/1 | GO} 8 } 4 2N2804 TO-78} 25 | 20 5 | 20/200] 1/5 05 | 10/1 |} 09 | 10/1 | 60) 8 | 4 2N2805 T0-78} 25 | 20 5 | 40/200; 1/5 |10) 5) O05 | 10/1 | 09} 10/1 | GO] 8 | 4 2N2806 TO0-78| 25 | 20 5 | 40/2001 1/5 }20] 10] 0.5 |} 10/1 | 09] 10/1 | 60} 8 | 4 2N2807 T0-78} 25 | 20 5 | 40/200] 1/5 05 | 10/1 | 09} 10/1 | 6} 8} 4 2N3726 T0-78| 50 | 50 5 | 135/420! 1/10 | 10 | 5] 0.25 | 50/25] 10 | 50/25 | 60 | 8 | 4 2N3727 TO-78) 50 50 5 | 135/420! 1/10 | 10 | 25) 0.25 | 50/25] 10 ) 50/25] 60; 8 | 4 2N5795 T0-78| 60 | 60 5 | 40/120 |150/10 0.4 |150/15| 1.3 | 150/15 | 200] 8 2N5796 TO-78| 60 | 60 5} 100/200} 150/10 0.4 |150/15] 143 | 150/15 | 200] 8 SP2904F T0-89} 60 | 40 5 | 40/120 |150/10 0.4 [150/15] 1.3 | 150/15 | 200] 8 SP2904AF | 10-89) 60 | 60 5 | 40/120 |150/10 0.4 1150/15] 1.3 | 150/15 | 200] 8 SP2905F T0-89} 60 | 40 5 | 100/300) 150/10 0.4 | 150/15} 1.3 | 150/15 | 200] 8 SP2Q05AF | T0-89} 60 60 5 | 100/300 | 150/10 0.4 (150/15) 1.3 | 150/15 | 200] 8 SP2906F T0-89} 60 | 40 5 | 40/120 | 150/10 0.4 |150/15] 1.3 | 150/15 | 200; 8 SP2906AF | 10-89] 60 60 5 | 40/120 }150/10 0.4 {150/15} 1.3 | 150/15 | 200 | 8 SP2907F TO-89} 60 40 5 | 100/300) 150/10 0.4 150/15) 1.3 | 150/15 | 200) 8 SP2907AF | T0-89] 60 | 60 5 | 100/300 | 150/10 0.4 1150/15] 1.3 | 150/15 | 200] 8 SP3133F | T0-89] 50 | 35 4 |} 40/120 }150/10 0.6 |150/15| 1.5 | 150/15 | 200 | 10 SP3134F 70-89} 50 35 4 | 100/300} 150/10 0.6 1150/15! 1.5 | 150/15 } 200} 10 SP3135F T0-89) 50 | 35 4 | 40/120 |150/10 0.6 |150/15 | 1.5 | 150/15 | 200; 8 SP3136F T0-89] 50 35 4 | 100/300 | 150/10 0.6 1150/15} 1.5 | 150/15 | 200| 8 4 RaytheonRAYTHEON/ SEMICONDUCTOR 44 Def} 7si7ato ooosso1 ? &j Medium Current General Purpose Amplifier & Switch GB PNP T-32-17 GB Quad Transistors Electrical Parameters @ +25C Ambient Temperature BVcoo | BVceo | BVeao | Hee @le/Vce | Veesar) @Io/le | ft Cob Product Min Min Min Min/ Volts MHz pF Type Pkg. | @10uA|}@10mA| @ tOuA| Max | mA/V | Max | mA/mA | Min | Max $P29040D T0-116 60 40 5 40/120 | 150/10} 0.4 | 160/15 | 200 8 $P29040DB TO-116 60 40 5 40/120 | 150/10] 0.4 | 150/15 | 200 8 SP29040F TO-86 60 40 5 40/120 | 150/10} 0.4 | 150/15 | 200 8 SP2904A0D TO-116 | . 60 60 5 40/120 | 150/10| 0.4 | 150/15 | 200 8 SP2904AQDB TO-116 60 60 5 40/120 | 150/10} 0.4 | 150/15 ) 200 8 SP2904AQF TO-86 60 60 5 40/120 | 150/10} 0.4 | 150/15 | 200 8 $P29050D TO-116 60 40 5 100/300 | 150/10! 0.4 | 150/15 | 200 8 $P29050DB TO-116 60 40 5 100/300} 150/10} 0.4 | 150/15 | 200 8 SP29050F TO-86 60 40 5 100/300 | 150/10] 0.4 | 180/15 | 200 8 SP2905AQD TO-116 60 60 5 100/300 | 150/10} 0.4 | 150/15 | 200 8 SP2905AQDB TO-116 60 60 5 100/300 | 150/10) 0.4 | 150/15 | 200 8 SP2905AQF TO-86 60 60 5 100/300 | 150/10 | 0.4 | 150/15 | 200 8 $P29060D TO-116 60 40 5 40/120 | 150/10} 0.4 | 160/15 | 200 8 $P290600B TO-116 60 40 5 40/120 | 150/10} 0.4 | 160/15 | 200 8 SP2906QF TO-86 60 40 5 40/120 | 150/10} 0.4 | 150/15 } 200 8 SP2906A0D T0-116 60 60 5 40/120 | 150/10] 0.4 | 150/15 | 200 8 $P2906AQDB 70-116 60 60 5 40/120 | 150/10) 0.4 | 150/15 | 200 8 SP2906AQF TO-86 60 60 5 40/120 | 150/10| 0.4 | 150/15 | 200 8 $P29070D TO-116 60 40 5 100/300 | 150/10! 0.4 | 150/15 | 200 8 $P29070DB TO-116 60 40 5 100/300 | 150/10 | 0.4 | 150/15 | 200 8 SP29070F TO-85 60 40 5 400/300 | 150/10} 0.4 | 150/15 | 200 8 $P2907AQD TO-116 60 60 5 100/300 | 150/10} 0.4 | 150/15 | 200 8 SP2907AQDB TO-116 60 60 5 100/300 | 150/10; 0.4 | 150/15 | 200 8 $P2907AQF TO-86 60 60 5 100/300 | 150/10 | 0.4 | 150/15 | 200 8 QD = Quad DIP (Ceramic); QDB = Quad DIP (Plastic); QF = Quad FlatpackRAYTHEON/ SEMICONDUCTOR GB PNP Typical Performance Characteristics q4 DE 7sq73n0 ooo05510 3 r 7-37-/7 Medium Current General Purpose Amplifier & Switch Power Derating Curves a =. B Ie 2 a E t L . Ti < a LD A i 0 2 50 75 100 125 150 175 200 225 Temperature (C} Collector Characteristics (Saturation Region) 280 _ 240 = = = 200 E S 160 2 2 120 & 1 80 * i 0 3 0 -0.10 02 030 040 050 Vee Calfector-Emitter Voltage {Volts} Base-to-Emitter Saturation Voltage vs. Collector Current -16 -14 12 -10 08 -06 ~04 0.2 01 1 10 ig Collector Current (mA) Veergar} Base-Emitter Saturation Voltaga (Volts) 8 85-02226A 100 = Collector-to-Base Leakage Current vs. Temperature a 8 8 tepo Collector Base Leakage (nA) 100 125 150 175 200 225 o ua 0 8&8 & 7 Ta Temperature (C) Collector-to-Emitter Saturation Voltage vs. Collector Current oe So ' = o 2 ' o oS = & s Veejsat) Collector-Emittar Saturation Voltage (Volts) Ss = _ 3 65-02235A 10 100 Ie Collector Current (mA) = Forward Current Transfer Ratio vs. Collector Current Voce =~ Ta = 25C Ta = 55C hee Forward Current Transfer Ratio 5.022374 0.1 10 10 ig Collector Current (mA} 100 3RAYTHEON/ SEMICONDUCTOR 7597360 RAYTHEON. SEMICONDUCTOR Medium Current General Purpose Amplifier & Switch GB PNP Typical Performance Characteristics (Continued) q4 DE ff v597aL0 OOOSS11 5 , 94D n956511 7-37-/7 D Base Characteristics 700 i S 3s 5 E 0 : 8 o = | 200 z= = I 0 06 07 ~0.8 -0.9 -1.0 A Ver Base-Emitter Voltage (Valts} vs. Collector Current Vee = -5V f= tkHz an > mH Die (ke) Ig Collector Current (mA) 0 2 4 6 8 0 12 14 16 f, ~ Constant Gain Bandwidth Products Contours ig Collector Current (mA) Common Emitter Small Signal Characteristics 280 14 240 12 200 1.0 = o3 1o = 2 5 * 0 8 06 80 04 40 02 0 0 8 2 65-02240A4RAYTHEON/ SEMICONDUCTOR 4q4 DE fj tsa7an0 go0sShe ? i 7597360 RAYTHEON. SEMICONDUCTOR 94D 05512 DB 7-37-/7 GB PNP Medium Current General Purpose Amplifier & Switch | Typical Performance Characteristics (Continued) Output and Input Capacitance Switching Time vs. Collector Current vs. Reverse Bias Voltage 70 {c= = 10ig2 2 E S 4 i ie & 20 Cp 10 s 0 3 50 100 150 200 250 300 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 ty Collector Current {mA} Reverse Blas Voltage (Votts) Collector Characteristics (Active Region) Ig Collector Current [mA} 0 -20 -40 ~60 -80 Vee Collector-Emitier Voltage (Volts) wenRAYTHEON/ SEMICONDUCTOR 44 DE 7597360 0005513 4 T _ 7597360 RAYTHEON. SEMICONDUCTOR 94D 05513. -OD J-37-/) Medium Current General Purpose Amplifier & Switch GB PNP Switching Measurement Circuits Vcc = -2OV 9 $ aon in Ik }o Vout = 0 VIN 500 ~16V Pulse Width = 200nS ~ Rise Time < 2n$ Zin = 500 65022444 Figure 1. ton Switching Vag = +13.7V Vee = -30V Pulse Width = 10nS Rise Time < 5nS +13.7V Fall Time = 5nS | Zin = 500 0 Duty Cycle = 2% | -16 3V 65-022454, Figure 2. torr SwitchingRAYTHEON/ SEMICONDUCTOR rworovyu TNA TE CTT ay pe @zsazaco ooossiuy o T-30-17 GB PNP Medium Current General Purpose Amplifier & Switch Packaging Information in Accordance With JEDEC (TO-5) Outline (15 mil Kovar Header) LorM ; Dimension Lead 3 7 we Notes: Lead No. 3 internally connected to case. Can material is nickel. 65-01179B In Accordance With JEDEC (TO-5) Outline (60 mil Kovar or Steel Header) Millimeters Dimension +| fH Notes: Lead No. 3 internally connected to case. Can material is nickel. 65-0118008 in Accordance With JEDEC (TO-18) Outline (8 mil Kovar Header) b= L or M>} Blmension | Min. D | 7 | fH Notes: Lead No. 3 internally connected to case. Can material is nickel. 85-01161B 10 RaytheonRAYTHEON/ SEMICONDUCTOR Medium Current General Purpose Amplifler & Switch i de 2597340 0005515 2 I T= 37-797 GB PNP Packaging Information (Continued) j< A M | 1p *-Reference Plane *Base and Seating Plane R Note: Can material is nickel. In Accordance With JEDEC (TO-78) Outline (15 mil Kovar Header) Adjacent Two Island Package Millimeters Max. Inches Oimension | Min. Max. | Min. Lead No. 1 internally connected to one island. Lead No. 7 internally connected to other island. In Accordance With JEDEC (TO-86) Outline 14-Lead Flatpack B Inches t Olmension Millimeters Max. Max. M ett t tt J-v+}-e-| | In Accordance With JEDEC (TO-89) Outline 6-Lead Flatpack j-B +} F Inches Millimeters 4 Dimension iI == H tah J _-ol | == Toya Plane FC 85-0188 11RAYTHEON/ SEMICONDUCTOR GB PNP q4 de ffzsaz3c0 ooossis 4 TU 7T-37-/)? Medium Current General Purpose Amplifier & Switch Packaging Information (Continued) TO-116 Outline 14-Lead Plastic Dual In-Line Package Millimeters mn me Ds Fe Be Bo a Dimension 14 | a ne et se be | eM E Ay Gi k salen =| Ee Similar to JEDEC (TO-116) Outline 14-Lead Ceramic Dual In-Line Package Inches Millimeters i Dimension} Min. Max. Min. Max, .200 K + | te alta ! Je Raytheon Company Semiconductor Division (A 350 Ellis Street Mountain View, CA 94039-7016 (415) 968-9211 TWX: 910-379-6484