CMZ12 to CMZ51
2015-05-15
1
TO SHIBA Zener Diode Silicon Diff use d Type
CMZ12 to CMZ51
○ Surge absorber
• Average power dissipation : P = 2 W
• Zener voltage : VZ = 12 to 51 V
• Suitable for compact assembly due to small
surface mount package
“M−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Power dissipation P 2 (Note 1)
W
Junction temperature Tj −40 to 150 °C
Storage temperature range Tstg −40 to 150 °C
Note 1: Ta = 30°C
Device mounted on a cerami c board
Board size : 50 mm × 50 mm
Land Pattern size : 2 mm × 2 mm
Board thickness : 0.64 mm
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. relia bility test
report and estimated failure rate, etc).
Land Pattern Dimensions (for reference only)
Unit:
mm
JEDEC ―
JEITA ―
TOSHIBA 3-4E1S
Weight: 0.023 g (typ.)
3.0
1.4
2.1
Unit: mm
Start of commercial production
2002-10
1.
Anode
2. Cathode
CMZ12 to CMZ51
2015-05-15
2
Electrical Characteristics (Ta = 25°C)
Type
Zener Voltage
Vz (V) Zener Impedance
rd (Ω)
Temperature
Coefficient
Of Zener
Forward Voltage
VF (V) Reverse Current
IR (μA)
Measure-
ment
Current
IZ (mA)
Measure-
ment
Current
IZ (mA)
αT (mV/°C)
Measure-
ment
Current
IF (A)
Measure-
ment
Voltage
VR (V)
Min Typ. Max Max Typ. Max Max Max
CMZ12 10.8 12 13.2 10 30 10 8 13 1.2 0.2 10 8
CMZ13 11.7 13 14.3 10 30 10 9 14 1.2 0.2 10 9
CMZ15 13.5 15 16.5 10 30 10 11 17 1.2 0.2 10 10
CMZ16 14.4 16 17.6 10 30 10 12 19 1.2 0.2 10 11
CMZ18 16.2 18 19.8 10 30 10 14 23 1.2 0.2 10 13
CMZ20 18.0 20 22.0 10 30 10 16 26 1.2 0.2 10 14
CMZ24 21.6 24 26.4 10 30 10 20 32 1.2 0.2 10 17
CMZ27 24.3 27 29.7 10 30 10 23 36 1.2 0.2 10 19
CMZ30 27.0 30 33.0 10 30 10 25 40 1.2 0.2 10 21
CMZ33 29.7 33 36.3 10 30 10 26 41 1.2 0.2 10 26.4
CMZ36 32.4 36 39.6 9 30 9 28 45 1.2 0.2 10 28.8
CMZ39 35.1 39 42.9 8 35 8 30 48 1.2 0.2 10 31.2
CMZ43 38.7 43 47.3 7 40 7 33 53 1.2 0.2 10 34.4
CMZ47 42.3 47 51.7 6 65 6 38 60 1.2 0.2 10 37.6
CMZ51 45.9 51 56.1 6 65 6 43 68 1.2 0.2 10 40.8
Marking
Abbreviation
Code Part No. Abbreviation
Code Part No.
12 CMZ12 30 CMZ30
13 CMZ13 33 CMZ33
15 CMZ15 36 CMZ36
16 CMZ16 39 CMZ39
18 CMZ18 43 CMZ43
20 CMZ20 47 CMZ47
24 CMZ24 51 CMZ51
27 CMZ27
Part No.
(or abbreviation code)
Cathode mark and Lot code
CMZ12 to CMZ51
2015-05-15
3
Handling Preca ution
1) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we
recommend when you design a circuit with a device.
P : We recommend that the worst case power dissipation be no greater than 50% of the
absolute maximum rating of power dissipation. Carry out adequate heat design.
PRSM : We recommend that a device be used within the recommended area in the figure,
PRSM-tw.
Tj : Derate this rating when using a device in order to ensure high reliability.
We recommend that the device be used at a Tj of below 120°C.
2) Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition.
When using a device, design a circuit board and a land pattern size to match the appropriate thermal
resistance value.
3) Please refer to the Rectifiers databook for further information.
CMZ12 to CMZ51
2015-05-15
4
0
5
10
15
20
25
10 14 18 22 26
0
20
40
60
80
100
120
140
160
0 0.4 0.8 1.2 1.6 2 2.4
10
100
1000
0.1 1 10
25
30
35
40
45
50
26 30 34 38 42 46 50 54 58
Ta max – P
Maximum allowable temperature
Ta max (°C)
Power dissipation P (W)
P
RSM
– tW
(reference value)
Non-repetitive peak reverse
Power dissipation P
RSM
(W)
Pulse width tW (ms)
αT – VZ (typ.)
Temperature coefficient of
Zener voltage α
T
(mV/°C)
Zener voltage V
Z
(V)
αT – VZ (typ.)
Temperature coefficient of
Zener voltage α
T
(mV/°C)
Zener voltage V
Z
(V)
CMZ12 to CMZ27 CMZ30 to CMZ51
Recommended
Device mounted on a ceramic board:
board size : 50 mm × 50 mm
Land Pattern size : 2.0 mm × 2.0 mm
board thickness : 0.64 mm
0.001 1000 10
0.1
100
1000
10
0.01 0.1 1 100
1
r
th (j-a)
– t
Transient thermal impedance
r
th (j-a)
(°C/W)
Time t (s)
Device mounted on a ceramic board:
Board size : 50 mm × 50 mm
Land Pattern size : 2.0 mm × 2.0 mm
Board thickness : 0.64 mm
Device mounted on a glass-epoxy board:
Board size : 50 mm × 50 mm
Land Pattern size : 6.0 mm × 6.0 mm
Board thickness : 1.6 mm
Device mounted on a glass-epoxy board:
Board size : 50 mm × 50 mm
Land Pattern size : 2.1 mm × 1.4 mm
Board thickness : 1.6 mm
Ta = 25°C
Rectangular pulse
P
RSM
tW
CMZ12 to CMZ51
2015-05-15
5
RESTRICTIONS ON PRODUCT USE
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