Zowie Technology Corporation
Switching Transistor
NPN Silicon
MMBT4401 1
2
1
2
33
SOT-23
Rating Symbol Value Unit
Characteristic Symbol Min. Max. Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current-Continuous IC600 mAdc
Characteristic Symbol Max. Unit
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oCPD225
1.8 mW
mW / oC
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oCPD
V(BR)CBO
300
2.4
60 -
mW
mW / oC
Thermal Resistance Junction to Ambient 556 oC / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
V(BR)CEO 40 - Vdc
Vdc
OFF CHARACTERISTICS
R
JA
Thermal Resistance Junction to Ambient 417 oC / WR
JA
Junction and Storage Temperature
Collector-Base Breakdowe Voltage
( IC=0.1 mAdc, IE=0 )
V(BR)EBO 6.0 - Vdc
Emitter-Base Breakdowe Voltage
( IE=0.1 mAdc, IC=0 )
Collector-Emitter Breakdowe Voltage(3)
( IC=1.0mAdc, IB=0 )
IBEV - 0.1 nAdc
Base Cutoff Current
( VCE=35 Vdc, VEB=0.4 Vdc )
ICEX - 0.1 nAdc
Collector Cutoff Current
( VCE=35 Vdc, VEB=0.4 Vdc )
MMBT4401=2X
-55 to +150 oCTJ,TSTG
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EMITTER
BASE
COLLECTOR
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Characteristic Symbol Min. Max. Unit
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
HFE
20
40
80
100
40
-
-
-
300
-
-
ON CHARACTERISTICS(3)
VCE(sat) Vdc
DC Current Gain
( IC=0.1 mAdc, VCE=1.0 Vdc )
( IC=1.0 mAdc, VCE=1.0 Vdc )
( IC=10 mAdc, VCE=1.0 Vdc )
( IC=150 mAdc, VCE=1.0 Vdc )
( IC=500 mAdc, VCE=2.0 Vdc )
Collector-Emitter Saturation Voltage(3)
( IC=150 mAdc, IB=15 mAdc )
( IC=500 mAdc, IB=50 mAdc ) -
-0.4
0.75
VBE(sat) Vdc
Base-Emitter Saturation Voltage(3)
( IC=150 mAdc, IB=15 mAdc )
( IC=500 mAdc, IB=50 mAdc ) 0.75
-0.95
1.2
fT
Ccb
250
-
-
6.5
MHZ
SMALL-SIGNAL CHARACTERISTIC
Ceb pF
pF
Current-Gain-Bandwidth Product
( IC=20 mAdc, VCE=10 Vdc, f=100 MHZ )
Collector-Base Capacitance
( VCB=5.0 Vdc, IE=0, f=1.0 MHZ )
Emitter-Base Capacitance
( VEB=0.5 Vdc, IC=0, f=1.0 MHZ )
Input Impedance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
- 30
hie k ohms1.0 15
Voltage Feedback Ratio
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hre X 10-4
0.1 8.0
Small-Signal Current Gain
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hfe -40 500
Output Admittance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hoe u mhos1.0 30
tr
td - 15
SWITCHING CHARACTERISTICS
ts
nS
Rise Time
Delay Time
Storage Time
- 20
tf nS
Fall Time
( VCC=30 Vdc, VBE=2.0 Vdc,
IC=150 mAdc, IB1=15 mAdc )
( VCC=30 Vdc,
IC=150 mAdc, IB1=IB2=15 mAdc ) -
-
225
30
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300uS, Duty Cycle 2.0%.
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Figure 1. Turn-On Time Figure 2. Turn-Off Time
1.0 k
+30 V
200
1.0 k
CS* < 10 pF*
< 2.0 ns < 20 ns
-4.0V
-2.0 V -14 V
1.0 to 100 us,
DUTY CYCLE = 2%
1.0 to 100 us,
DUTY CYCLE = 2%
+16 V +16 V
00
Scope rise time < 4.0 ns
* Total shunt capacitance of test jig and connectors
REVERSE BIAS VOLTAGE ( VOLTS )
5.0
7.0
3.0
10
20
30
2.0
0.1
IC, COLLECTOR CURRENT ( mA )
10
10
Q, CHARGE (pC)
7.0
5.0
3.0
1.0
0.7
0.5
2.0
0.3
0.1
0.2
20 30 50 70 100 200 300 500
CAPACITANCE ( pF )
1.0 2.0 3.0 5.0 10 20 30 50
0.2 0.3 0.5
Ccb
Cobo
TJ=25oC
TJ=100oC
TRANSIENT CHARACTERISTICS
SWITCHING TIME EQUIVALENT TEST CIRCUITS
VCC=30 V
IC/IB=10
Figure 3. Capacitance Figure 4. Charge Data
QT
QA
+30 V
200
CS* < 10 pF*
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Figure 5. Turn-On Time
IC, COLLECTOR CURRENT ( mA )
Figure 7. Storage Time Figure 8. Fall Time
IC, COLLECTOR CURRENT ( mA )
t, TIME ( ns )
t, TIME ( ns )
IC, COLLECTOR CURRENT ( mA )
tf, FALL TIME ( ns )
t's, STORAGE TIME ( ns )
IC, COLLECTOR CURRENT ( mA )
Figure 9.Frquency Effects
f, FREQUENCY (kHz)
NF, NOISE FIGURE ( bB )
Figure 10.Source Resistance Effects
RS, SOURCE RESISTANCE ( OHMS )
NF, NOISE FIGURE ( bB )
Figure 6. Rise and Fall Times
20
30
50
5.0
10
7.0
70
100
10 20 50 70 100 200 300 500
30
20
30
50
5.0
10
7.0
70
100
10 20 50 70 100 200 300 500
30
IC/IB=10
tr @ VCC=30V
tr @ VCC=10V
tb @ VEB=2.0V
td @ VEB=0V
TRANSIENT CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE=10 Vdc, TA=25oC
Bandwidth=1.0HZ
VCC=30 V
IC/IB=10
20
30
50
70
100
10
5.0
7.0
10 20 50 70 100 200 300 500
30
IC/IB=20
IC/IB=10
VCC=30 V
IB1=IB2
tr
tr
10 20 50 70 100 200 300 500
30
100
200
30
70
50
300
tS4 = tS - 1/8tf
IB1 = IB2
IC/IB = 10 to 20
6.0
8.0
10
0
4.0
2.0
0.1 2.0 5.0 10 20 50
1.00.50.20.01 0.02 0.05 100 100k50 100 200 500 1.0k2.0k 5.0k10k 20k 50k
6.0
8.0
10
0
4.0
2.0
f = 1.0 kHz
IC=1.0mA, RS=150
IC=500uA, RS=200
IC=100uA, RS=2.0k
IC=50uA, RS=4.0k IC=50uA
IC=100uA
IC=500uA
IC=1.0mA
RS=OPTIMUM
SOURCE
RESISTANCE
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Figure 11. Current Gain
IC, COLLECTOR CURRENT ( mA )
Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance
IC, COLLECTOR CURRENT ( mA )
hfe, CURRENT GAIN
hie, INPUT IMPEDANCE (OHMS)
IC, COLLECTOR CURRENT ( mA )
hoe, OUTPUT ADMITTANCE(umhos)
hre, VOLTAGE FEEDBACK RATIO (X 10-4)
IC, COLLECTOR CURRENT ( mA )
Figure 12. Input Impedance
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHZ, TA = 25oC
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3
100
200
20
70
50
300 50k
500
30
5.0 7.0
20k
10k
5.0k
2.0k
1.0k
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3
0.2
10 100
1.0
5.0 7.0
50
20
10
5.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.1 0.2 0.5 0.7 1.0 2.0 3.0 10
0.3 5.0 7.0
This group of graphs illustrates the relationship between
hfe and and other " h " parameters for this series of transistors.
To obtain these curves, a high-gain and a low-gain unit were
selected from the MMBT4401LT1 lines, and the same units
were used to develop the correspondingly numbered curves
on each graph.
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
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Figure 17. " ON " Voltage
Figure 16. Collector Saturation Region
Figure 18. Temperature Coefficients
IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA )
VOLTAGE ( VOLTS )
IB, BASE CURRENT ( mA )
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
IC, COLLECTOR CURRENT ( mA )
hFE, NORMALIZED CURRENT GAIN
STATIC CHARACTERISTICS
COEFFICIENTS (mV / oC)
0.4
0.6
0.8
1.0
0.2
0.1 0.5 2.0 3.0 500.2 0.3
01.00.7 5.0 7.00.070.050.030.020.01 10 20 30
0.3
0.5
0.7
1.0
3.0
0.1 0.5 2.0 3.0 10 50 70
0.2 0.3
0.2 100
1.00.7 500
30205.0 7.0
2.0
200 300
0.4
0.6
0.8
1.0
0.2
1.0 2.0 5.0 10 20 50
0100
-0.5
0
+0.5
-1.0
-1.5
-2.0
500
200
0.1 0.2 0.5 -2.5 1.0 2.0 5.0 10 20 50 100 500
200
0.1 0.2 0.5
VCE=1.0V
VCE=10V TJ=125oC
TJ=25oC
TJ= -55oC
TJ= 25oC
TJ= 25oC
IC = 1.0mA IC = 10mA
VBE(SAT) @ IC/IB = 10
VBE @ VCE = 10 V
VCE(SAT) @ IC/IB = 10
IC = 100mA IC = 500mA
VC for VCE(sat)
VB for VBE