Zowie Technology Corporation
Characteristic Symbol Min. Max. Unit
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
HFE
20
40
80
100
40
-
-
-
300
-
-
ON CHARACTERISTICS(3)
VCE(sat) Vdc
DC Current Gain
( IC=0.1 mAdc, VCE=1.0 Vdc )
( IC=1.0 mAdc, VCE=1.0 Vdc )
( IC=10 mAdc, VCE=1.0 Vdc )
( IC=150 mAdc, VCE=1.0 Vdc )
( IC=500 mAdc, VCE=2.0 Vdc )
Collector-Emitter Saturation Voltage(3)
( IC=150 mAdc, IB=15 mAdc )
( IC=500 mAdc, IB=50 mAdc ) -
-0.4
0.75
VBE(sat) Vdc
Base-Emitter Saturation Voltage(3)
( IC=150 mAdc, IB=15 mAdc )
( IC=500 mAdc, IB=50 mAdc ) 0.75
-0.95
1.2
fT
Ccb
250
-
-
6.5
MHZ
SMALL-SIGNAL CHARACTERISTIC
Ceb pF
pF
Current-Gain-Bandwidth Product
( IC=20 mAdc, VCE=10 Vdc, f=100 MHZ )
Collector-Base Capacitance
( VCB=5.0 Vdc, IE=0, f=1.0 MHZ )
Emitter-Base Capacitance
( VEB=0.5 Vdc, IC=0, f=1.0 MHZ )
Input Impedance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
- 30
hie k ohms1.0 15
Voltage Feedback Ratio
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hre X 10-4
0.1 8.0
Small-Signal Current Gain
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hfe -40 500
Output Admittance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ ) hoe u mhos1.0 30
tr
td - 15
SWITCHING CHARACTERISTICS
ts
nS
Rise Time
Delay Time
Storage Time
- 20
tf nS
Fall Time
( VCC=30 Vdc, VBE=2.0 Vdc,
IC=150 mAdc, IB1=15 mAdc )
( VCC=30 Vdc,
IC=150 mAdc, IB1=IB2=15 mAdc ) -
-
225
30
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300uS, Duty Cycle 2.0%.
Zowie Technology CorporationREV. : 0