2N4403 / MMBT4403 -- PNP General-Purpose Amplifier 2N4403 / MMBT4403 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. C E TO-92 SOT-23 EBC Mark:2T Figure 1. 2N4403 Device Package B Figure 2. MMBT4403 Device Package Ordering Information Part Number Marking Package Packing Method 2N4403BU 2N4403 TO-92 3L Bulk 2N4403TF 2N4403 TO-92 3L Tape and Reel 2N4403TFR 2N4403 TO-92 3L Tape and Reel 2N4403TA 2N4403 TO-92 3L Ammo 2N4403TAR 2N4403 TO-92 3L Ammo MMBT4403 2T SOT-23 3L Tape and Reel (c) 2001 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: MMBT4403/D Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V -600 mA -55 to +150 C IC TJ, TSTG Parameter Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations. Thermal Characteristics Values are at TA = 25C unless otherwise noted. Symbol Max. Parameter Unit 2N4403(3) MMBT4403(4) Total Device Dissipation 625 350 mW Derate Above 25C 5.0 2.8 mW/C RJC Thermal Resistance, Junction to Case 83.3 RJA Thermal Resistance, Junction to Ambient 200 PD C/W 357 C/W Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. www.onsemi.com 2 2N4403 / MMBT4403 -- PNP General-Purpose Amplifier Absolute Maximum Ratings(1),(2) Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -1.0 mA, IB = 0 -40 V V(BR)CBO Collector-Base Breakdown Voltage IC = -0.1 mA, IE = 0 -40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -0.1 mA, IC = 0 -5.0 V Base Cut-Off Current VCE = -35 V, VEB = -0.4 V -0.1 A Collector Cut-Off Current VCE = -35 V, VEB = -0.4 V -0.1 A IBL ICEX On Characteristics IC = -0.1 mA, VCE = -1.0 V hFE DC Current Gain IC = -1.0 mA, VCE = -1.0 V 60 IC = -10 mA, VCE = -1.0 V 100 IC = -150 mA, VCE = -2.0 V(5) 100 V(5) 20 IC = -500 mA, VCE = -2.0 VCE(sat) Collector-Emitter Saturation Voltage(5) VBE(sat) Base-Emitter Saturation Voltage 30 300 IC = -150 mA, IB = -15 mA -0.40 IC = -500 mA, IB = -50 mA -0.75 IC = -150 mA, IB = -15 mA(5) -0.75 IC = -500 mA, IB = -50 mA -0.95 -1.30 V V Small Signal Characteristics Current Gain - Bandwidth Product IC = -20 mA, VCE = -10 V, f = 100 MHz Ccb Collector-Base Capacitance VCB = -10 V, IE = 0, f = 140 kHz 8.5 pF Ceb Emitter-Base Capacitance VBE = -0.5 V, IC = 0, f = 140 kHz 30 pF hie Input Impedance IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz 1.5 15.0 k hre Voltage Feedback Ratio IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz 0.1 8.0 x10-4 hfe Small-Signal Current Gain IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz 60 500 hoe Output Admittance IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz 1 100 mhos VCC = -30 V, IC = -150 mA, IB1 = -15 mA 15 ns 20 ns VCC = -30 V, IC = -150 mA, IB1 = IB2 = -15 mA 225 ns 30 ns fT 200 MHz Switching Characteristics td Delay Time tr Rise Time ts Storage Time tf Fall Time Note: 5. Pulse test: pulse width 300 s, duty cycle 2.0%. www.onsemi.com 3 2N4403 / MMBT4403 -- PNP General-Purpose Amplifier Electrical Characteristics VCESAT - COLLECTOR EMITTE R VOLTAGE (V) VCE = 5V 400 125 C 0.3 300 25 C 200 100 0.3 0.1 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 V BESAT - BASE EMITTER VOLTAGE (V) 1 - 40 C - 40 C 0 1 25 C 0.6 10 100 I C - COLLECTOR CURRE NT (mA) 0.6 125 C 0.4 = 10 - 40 C 25 C 125C VCE = 5V 0.2 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 500 0 0.1 1 10 I C - COLLECTOR CURRE NT (mA) 25 Figure 6. Base-Emitter On Voltage vs. Collector Current Figure 5. Base-Emitter Saturation Voltage vs. Collector Current 100 20 CAPACITANCE (pF) V CB = 35V 10 1 0.1 0.01 25 500 1 0.8 0.8 I CBO - COLLE CTOR CURRENT (nA) 125 C Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current Figure 3. Typical Pulsed Current Gain vs. Collector Current 0.4 25 C 0.2 - 40 C 0 0.1 0 = 10 0.4 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 0.5 500 50 75 100 T A - AMBIE NT TEMP ERATURE ( C) Figure 7. Collector Cut-Off Current vs. Ambient Temperature 16 12 C ib 8 4 0 0.1 125 C ob 1 10 REVERSE BIAS VOLTAGE (V) 50 Figure 8. Input and Output Capacitance vs. Reverse Bias Voltage www.onsemi.com 4 2N4403 / MMBT4403 -- PNP General-Purpose Amplifier Typical Performance Characteristics 250 I B1 = I B2 = I B1 = I B2 = 10 400 V cc = 15 V ts 150 TIME (nS) TIME (nS) 200 500 Ic 100 tr tf V cc = 15 V 300 200 t off 50 100 t on td 0 10 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 1000 1 PD - POWER DISSIPATION (W) I B1 - TURN 0N BASE CURRENT (mA) 50 20 SOT-223 0.75 10 t r = 15 V 5 30 ns TO-92 0.5 SOT-23 0.25 2 60 ns 1 10 100 I C - COLLECTOR CURRENT (mA) 0 500 0 hoe h re h fe 1 0.5 h ie 0.2 V CE = -10 V T A = 25 oC 1 _ _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _ 50 CHAR. RELATIVE TO VALUES AT VCE = -10V 5 2 25 50 75 100 TEMPERATURE ( oC) 125 150 Figure 12. Power Dissipation vs. Ambient Temperature Figure 11. Rise Time vs. Collector and Turn-On Base Currents CHAR. RELATIVE TO VALUES AT I C= -10mA 100 I C - COLLECTOR CURRENT (mA) Figure 10. Turn-On and Turn-Off Times vs. Collector Current Figure 9. Switching Times vs. Collector Current 0.1_ Ic 10 Figure 13. Common Emitter Characteristics www.onsemi.com 5 1.3 1.2 h re and hoe h re h ie h fe hoe 1.1 1 h ie 0.9 h fe 0.8 -4 I C = -10mA T A = 25oC -8 -12 -16 V CE - COLLECTOR VOLTAGE (V) -20 Figure 14. Common Emitter Characteristics 2N4403 / MMBT4403 -- PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) CHAR. RELATIVE TO VALUES AT TA = 25oC 1.5 I C = -10mA 1.4 V = -10 V CE 1.3 1.2 h fe h ie h re hoe 1.1 hoe 1 0.9 0.8 0.7 h re h ie 0.6 0.5 -40 h fe -20 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 Figure 15. Common Emitter Characteristics www.onsemi.com 6 2N4403 / MMBT4403 -- PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) TO-92 3L (Tape and Reel, Ammo) Figure 16. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 7 2N4403 / MMBT4403 -- PNP General-Purpose Amplifier Physical Dimensions TO-92 3L (Bulk) D Figure 17. 3-LEAD, JEDEC TO-92 COMPLIANT STRAGHIT LEAD CONFIGURATION (OLD TO92AM3) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 8 2N4403 / MMBT4403 -- PNP General-Purpose Amplifier Physical Dimensions (Continued) SOT-23 3L 0.95 2.920.20 3 1.40 1.30+0.20 -0.15 1 (0.29) 2 0.95 1.90 2.20 0.60 0.37 0.20 A B 1.90 1.00 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.400.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 SCALE: 2X Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 9 2N4403 / MMBT4403 -- PNP General-Purpose Amplifier Physical Dimensions (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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