2003. 7. 24 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTB631K
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES
High breakdown voltage VCEO 120V, high current 1A.
Low saturation voltage and good linearity of hFE.
MAXIMUM RATING (Ta=25 )
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
OP
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
ฮฆ3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
123
+
_
+
_
+
_
15.50 0.5
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE(1) Classification Y:100 200, GR:160 320
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -120 V
Collector-Emitter Voltage VCEO -120 V
Emitter-Base Voltage VEBO -5 V
Collector Current
IC-1
A
ICP -2
Collector Power
Dissipation
Ta=25 PC
1.5
W
Tc=25 8
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut of Current ICBO VCB=-50V, IE=0 - - -1 A
Emitter Cut of Current IEBO VEB=-4V, IC=0 - - -1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A-120 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA -120 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A-5 - - V
DC Current Gain
hFE(1) Note VCE=-5V, IC=-50mA 100 - 320
hFE(2) VCE=-5V, IC=-500mA 20 - -
Gain Bandwidth Product fTVCE=-10V, IC=-50mA - 110 - MHz
Output Capacitance Cob VCB=-10V, f=1MHz - 30 - pF
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA --0.15 -0.4 V
Base-Emitter Saturation Voltage VBE(sat) IC=-500mA, IB=-50mA --0.85 -1.2 V
Switching Time
Turn-on Time ton
IB1
B2
I
20ยตsec
1uF 1uF
24โฆ
1โฆ
100โฆ
CE
V =-12V
2V -12V
I =10I =-10I =50mA
C B1 B2
- 80 -
nS
Turn-off Time toff - 100 -
Storage Time tstg - 600 -
2003. 7. 24 2/2
KTB631K
Revision No : 2
C
COLLECTOR CURRENT I (A)
0
0
BASE-EMITTER VOLTAGE V (V)
BE
CBE
V - I
V - I
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
C
0
COLLECTOR CURRENT I (A)
COLLECTOR CURRENT I (mA)
COLLECTOR EMITTER SATURATION
-1 -3 -10 -30
CE(sat)
-0.01
V - I
C
CE C
-1 -2 -3 -4 -5 -6
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
Tc=25 C
-20
-15
-12
-10
-8
-6
-4
-2
I =0mA
B
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4 V =-5V
CE
CE
COLLECTOR-BASE VOLTAGE V (V)
OUTPUT CAPACITANCE C (pF)
5
5
-3-1
ob
C - V
ob CB
-10 -30 -100
10
30
50
100
200
f=1MHz
C
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
-3-1 -30-10
FE
10
h - I
FE C
-100 -300 -1k -5k
30
50
100
300
500 V =-5V
CE
CE(sat) C
VOLTAGE V (V)
-100 -300 -1k -3k
-0.03
-0.05
-0.1
-0.3
-0.5
-1.0 I /I =10
CB
COLLECTOR CURRENT I (A)
0.005
C
101
COLLECTOR-EMITTER VOLTAGE V (V)
CE
A S O
COLLECTOR DISSIPATION P (W)
C
0
AMBIENT TEMPERATURE Ta ( C)
0
Pc - Ta
20 40 60 80 100 120 140 160
2
4
6
8
10
infinite heat sink
No Heat Sink
100
0.01
0.03
0.1
0.3
0.5
1
3
5
0.05
10mS
1mS 100ยตS
DC
