GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package Lead (Pb) Free Product - RoHS Compliant SFH 420 SFH 425 SFH 425 SFH 420 Not for new design Replacement: SFH4243 (for SFH420) / SFH4244 (for SFH425) Wesentliche Merkmale Features * GaAs-LED mit sehr hohem Wirkungsgrad * Gute Linearitat (Ie = f [IF]) bei hohen Stromen * Gleichstrom- (mit Modulation) oder Impulsbetrieb moglich * Hohe Zuverlassigkeit * Hohe Impulsbelastbarkeit * Oberflachenmontage geeignet * Gegurtet lieferbar * SFH 420 Gehausegleich mit SFH 320 SFH 425 Gehausegleich mit SFH 325 * Very highly efficient GaAs-LED * Good Linearity (e = f [IF]) at high currents * DC (with modulation) or pulsed operations are possible * High reliability * High pulse handling capability * Suitable for surface mounting (SMT) * Available on tape and reel * SFH 420 same package as SFH 320 SFH 425 same package as SFH 325 Anwendungen Applications * Miniaturlichtschranken fur Gleich- und Wechsellichtbetrieb, Lochstreifenleser * Industrieelektronik * Messen/Steuern/Regeln" * Automobiltechnik * Sensorik * Alarm- und Sicherungssysteme * IR-Freiraumubertragung * * * * * * * Miniature photointerrupters Industrial electronics For drive and control circuits Automotive technology Sensor technology Alarm and safety equipment IR free air transmission Typ Type Bestellnummer Ordering Code Gehause Package SFH 420 SFH 425 Q65110A2473 Q65110A2463 Kathodenkennzeichnung: abgesetzte Ecke cathode marking: beveled edge TOPLED(R) SIDELED(R) 2012-08-17 1 SFH 420, SFH 425 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 + 100 C Sperrspannung Reverse voltage VR 5 V Durchlassstrom Forward current IF 100 mA Stostrom, 10 s, D = 0 Surge current IFSM 3 A Verlustleistung Power dissipation Ptot 160 mW Warmewiderstand Sperrschicht - Umgebung bei Montage auf FR4 Platine, Padgroe je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Warmewiderstand Sperrschicht - Lotstelle bei Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block RthJA RthJS 450 200 K/W K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms peak 950 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA 55 nm Abstrahlwinkel Half angle 60 Grad deg. Aktive Chipflache Active chip area A 0.09 mm2 Abmessungen der aktiven Chipflache Dimensions of the active chip area L B LW 0.3 0.3 mm2 Kennwerte (TA = 25 C) Characteristics 2012-08-17 2 SFH 420, SFH 425 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Schaltzeiten, e von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to10%, IF = 100 mA, RL = 50 tr , tf 0.5 s Kapazitat Capacitance VR = 0 V, f = 1 MHz Co 25 pF Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s VF VF 1.3 ( 1.5) 1.9 ( 2.5) V V Sperrstrom Reverse current VR = 5 V IR 0.01 ( 1) A Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms e 18 mW Temperaturkoeffizient von Ie bzw. e, IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA TCI - 0.55 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV - 1.5 mV/K Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TC + 0.3 nm/K Strahlstarke Ie in Achsrichtung (gemessen bei einem Raumwinkel = 0.01 sr) Radiant Intensity Ie in Axial Direction (at a solid angle of = 0.01 sr) Bezeichnung Parameter Symbol Werte Values Einheit Unit Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie typ 2.5 5.0 mW/sr mW/sr Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Ie typ. 38 mW/sr 2012-08-17 3 SFH 420, SFH 425 e = f (IF) Radiant Intensity e 100 mA Single pulse, tp = 20 s Relative Spectral Emission Irel = f () OHR01938 100 e (100 mA) 10 1 % rel OHR00864 e Permissible Pulse Handling Capability IF = f (tp), duty cycle D = parameter, TA = 20 C 10 4 OHR00865 F mA 5 80 D= T F T D = 0.005 0.01 60 0.02 10 10 0 40 5 20 920 960 nm 1000 10 -1 10 -2 1060 Forward Current IF = f (VF), single pulse, tp = 20 s 10 -1 10 0 A F 10 1 Max. Permissible Forward Current IF = f (TA) OHR01554 10 1 OHR00883 120 F mA A 100 10 0 80 R thjA = 450 K/W 10 -1 60 40 10 -2 20 10 -3 0 1 2 3 4 5 6 V VF 0 8 0 20 40 60 80 100 C 120 TA Radiation Characteristics Irel = f () 40 30 20 10 0 50 OHL01660 1.0 0.8 0.6 60 0.4 70 0.2 80 0 90 100 1.0 0.1 0.2 0.5 0 880 F 0.05 3 0.8 2012-08-17 0.6 0.4 0 20 40 60 80 100 4 120 DC 10 2 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 SFH 420, SFH 425 Mazeichnung Package Outlines SFH 420 2.1 (0.083) 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 1.7 (0.067) 0.1 (0.004) (typ.) 0.9 (0.035) 0.7 (0.028) 3.4 (0.134) 3.0 (0.118) (2.4) (0.095) 3.7 (0.146) 3.3 (0.130) 41 2.1 (0.083) A Cathode marking 0.5 (0.020) 1.1 (0.043) C 0.18 (0.007) 0.12 (0.005) 0.6 (0.024) 0.4 (0.016) GPLY6724 1.1 (0.043) Anode (1.4 (0.055)) (R1) 4.2 (0.165) 3.8 (0.150) C A GPLY6880 Mae in mm / Dimensions in mm. 2012-08-17 3.8 (0.150) 3.4 (0.134) (2.9 (0.114)) Cathode marking (2.85 (0.112)) 0.9 (0.035) (0.3 (0.012)) Cathode 2.54 (0.100) spacing 0.7 (0.028) 2.4 (0.094) 2.8 (0.110) 4.2 (0.165) 3.8 (0.150) (2.4 (0.094)) SFH 425 5 SFH 420, SFH 425 Empfohlenes Lotpaddesign Recommended Solder Pad Reflow Loten Reflow Soldering SFH 420 4.5 (0.177) 2.6 (0.102) 1.5 (0.059) 1.5 (0.059) 4.5 (0.177) 2.6 (0.102) Padgeometrie fur verbesserte Warmeableitung Lotstopplack Solder resist Paddesign for improved heat dissipation Cu-Flache > 16 mm 2 Cu-area > 16 mm 2 SFH 425 3.0 (0.118) 3.7 (0.146) 1.2 (0.047) Padgeometrie fur verbesserte Warmeableitung Paddesign for improved heat dissipation Cu-Flache > 16 mm 2 Cu-area > 16 mm 2 Lotstopplack Solder resist OHLPY965 Mae in mm / Dimensions in mm. 2012-08-17 6 SFH 420, SFH 425 Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2 (nach J-STD-020C) (acc. to J-STD-020C) OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C 255 C 240 C T 250 C 260 C +0 -5 C 245 C 5 C C 235 C +5 -0 C 217 C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 25 C 0 0 50 100 150 200 250 s 300 t Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 t 2012-08-17 7 s 250 SFH 420, SFH 425 Published by OSRAM Opto Semiconductors GmbH Leibnizstrasse 4, D-93055 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2012-08-17 8