October 1992
GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
.EMITTER BALLASTED
.REFRACTORY/GOLD METALLIZATION
.VSWR CAPABILITY ∞:1 @ RATED
CONDITIONS
.HERMETIC STRIPACPACKAGE
.POUT =5.0 W MIN. WITH 10 dB GAIN @
1 GHz
DESCRIPTION
The MSC81111 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated rated conditions. The
MSC81111 is designed for Class C amplifier ap-
plications in the 0.4 - 1.2 GHz frequency range.
PIN CONNECTION
BRANDING
81111
ORDER CODE
MSC81111
ABSOLUTE MAXIMUM RATINGS (Tcase =25°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC≤50°C) 18.75 W
ICDevice Current* 600 mA
VCC Collector-Supply Voltage* 35 V
TJJunction Temperature 200 °C
TSTG Storage Temperature −65 to +200 °C
RTH(j-c) Junction-Case Thermal Resistance* 8.0 °C/W
*Appliesonlyto ratedRF amplifier operation
MSC81111
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
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ELECTRICAL SPECIFICATIONS (Tcase =25°C)
Symbol Test Conditions Value Unit
Min. Typ. Max.
POUT f=1.0 GHz PIN =0.5 W VCC =28 V 5.0 6.6 — W
ηcf=1.0 GHz PIN =0.5 W VCC =28 V 50 52 — %
GPf=1.0 GHz PIN =0.5 W VCC =28 V 10 11.2 — dB
COB f=1 MHz VCB =28 V — — 6.5 pF
STATIC
Symbol Test Conditions Value Unit
Min. Typ. Max.
BVCBO IC=1mA IE=0mA 45 — — V
BVEBO IE=1mA IC=0mA 3.5 — — V
BVCER IC =5mA RBE =10Ω45 — — V
ICBO VCB =28V — — 1.0 mA
hFE VCE =5V IC=200mA 15 — 120 —
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs FREQUENCY COLLECTOR EFFICIENCY
vs FREQUENCY
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
MSC81111
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TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
PIN =0.5 W
VCC =35 V
Normalized to 50 ohms
POUT =Saturated
VCC =35 V
Normalized to 50 ohms
IMPEDANCE DATA
ZIN
ZCL
FREQ. ZIN (Ω)Z
CL (Ω)
0.4 GHz 4.0 + j 0.8 40.0 + j 38.0
0.6 GHz 4.1 + j 2.0 24.0 + j 29.5
0.8 GHz 4.2 + j 3.2 15.0 + j 22.0
1.0 GHz 4.3 + j 4.5 9.4 + j 16.0
1.2 GHz 4.4 + j 7.1 6.0 + j 11.0
MSC81111
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PACKAGE MECHANICAL DATA
Frequency 1.0 GHz
All dimensions are in inches.
Ref.: Dwg. No. C127318A
TEST CIRCUIT
MSC81111
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Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor forany infringement of patents or other rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunderany patent or patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife supportdevices or systemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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MSC81111
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