2N3506 2N3507 ye General NPN SILICON SWITCHING TRANSISTORS * mt Semiconductor Industries, Inc. DIFFUSED SILICON EPITAXIAL PASSIVATED TRANSISTOR These devices are designed for use in high-current, high-speed, saturated switching and core driver applications. The latest technologies are used to offer the highest degree of reliability. 7 Zo JAN, JANTX, & JANTXV to MIL-S-19500/349 are available. <a FEATURES APPLICATIONS * Fast Switching * High speed Switching Oy) Low Saturation Voltage Regulated Power Supplies " TO 39 Minimum f; of 60 MHz + Converters * Low Leakage Current Inverters Core Drivers ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature ..... 2.2.00. oe ee eee 65C to +200C Operating Junction Temperature .....- 6.20.06. cece +200C Lead Temperature (soldering, 60 second time limit) ...............-. +300C Maximum Power Dissipation Total Dissipation at 25C Case Temperature ..........-... 0 eee eee 5 Watts Linear Derating Factor... 2.0.0.2... ee eee eee 28.6 mWirC Maximum Voltages and Current 2N3506 2N3507 Veeo Collector to Emitter Voltage 40 Volts 50 Volts Vego Collector to Base Voltage 60 Volts 80 Votts Vego Emitter to Base Voltage 5 Volts 5 Volts le Collector Current 3 Amps 3 Amps MECHANICAL CHARACTERISTICS TO-39 Package Weight: 1.8 grams (approximate) Lead material: Kovar with Gold Plating Pin 1. Emitter 2. Base 3. Collector Body marked with Logo + and part number ELECTRICAL CHARACTERISTICS (25C Case Temperature unless otherwise noted) TEST 2N3506 2N3507 CHARACTERISTIC SYMBOL CONDITIONS MIN. MAX. MIN. MAX. UNITS Callector to Base Breakdown Voltage BYVcao Ie =1002A,1_=0 60 80 Volts + Collector to Emitter Breakdown Voltage BVceo Io 710mA, Ig=0 40 50 Volts Emitter to Base Breakdown Voltage BVego be =100A, 16 =0 5 5 Volts TDC Current Gain Ree 1=500MA, Veg =IV 50 35 TDC Current Gain Nee Io=l.5A, Veez2V 40 200 30 150 + DC Current Gain Nee 1=2.5A, Voe=3V 30 25 +OC Current Gain Nee te=3A, Vee=5V 25 20 tCollector Saturation Voltage Vee (SAT) (c= 1.5A, 1g =150mA 1.0 1.0 Volts 1=2.5A, 1g =250mMA 15 15 Volts + Base Saturation Voltage Vee (SAT) 1o=1.BA, 1g =150mMA 0.9 1.4 0.9 1.4 Volts 1=2.5A, 1g =250mA 2.0 2.0 Volts Collector Cutoff Current loEx Vee= 40V, Veg = 4V 1.0 u Amps Vce= 6OV, Veg = 4V 1.0 4 Amps Base Cutoff Current ler Vee= 40V, Veg = 4V 1.0 a4 Amps Vce= 80V, Veg = 4V 1.0 | # Amps JEDEC registered data + Pulse Conditions: Width = 10ys; Duty Cycle < 2% (measured using Kelvin connections) General Semiconductor Industries, Inc. * 2001 W. Tenth Place. Tempe, AZ 85281 (602)968-3101 FAX: (602)966-6396 3-10 General Semiconductor Industries, Inc. DYNAMIC CHARACTERISTICS TEST CHARACTERISTIC SYMBOL CONDITIONS MIM. MAX. UNITS Delay Time ta See Figure 2 16 nSec Rise Time tr See Figure 2 30 nSec Storage Time ts See Figure 2 55 nSec Fall Time te See Figure 2 35 nSec Collector Base Capacitance {f= 1.0MH,) Cos Vee ZlOV, 1e=0 4a pF Current Gain - Bandwidth Product (f= 20MH2z fy 1, =100mA, Voce =5V 60 MHz JEDEC registered data. 3 Figure 1 " Games = 35C MAXIMUM SAFE Ova man = 1759 Sw OPERATION REGION - x 3 rs Kd a 4 o | CA AK a | +16.4V-~ NPUT + ~f---- FE inPU 13.6 Obey eta 5 T tr ti ele ty tt te Vee =30V. . | y ie = BA Figure 2 90% 0% OUTPUT ( COLLECTOR CURRENT {AMPS) Vy=-3V SWITCHING v oot 'OLTAGE WAVE FORMS | gi ztgg= tS ma CIRCUIT 8 " rT 7 Vee COLLECTOR EMITTER VOLTAGE (VOLTS) G Figure 3 "i SATURATION VOLTAGES 2 Vae (sa Ww oO - z 9 S 2 bE z = ec & VcE (SA 3 = & 8 sz) Ww = w F x a > Figure 4 0.2 04 O06 OB 1.0 20 3.0 pe CURRENT |, COLLECTOR CURRECT {Ade} 0.1 02 O03 as 1.0 20 3.0 ! COLLECTOR CURRENT (Adc) General Semiconductor Industries. Inc. 2001 W. Tenth Place. Tempe, AZ 85281 (602)96B-3101 FAX: (602)966-6396 3-11