VCE IC = = 1700 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V170100 MARKETING INFORMATION * * * * * Doc. No. 5SYA1532-00 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package Snap-on PCB assembly Integrated PTC substrate temperature sensor Maximum Rated Values (Tvj = 25C, unless specified otherwise) Parameter Symbol Collector-Emitter Voltage VCES DC Collector Current Peak Collector Current Values Unit VGE shorted 1700 V IC Ths = 50C 150 A ICM Pulse: tp=1ms, Ths = 50C 300 A 20 V 570 W 150 A 300 A Gate Emitter Voltage VGES Total Power Dissipation Ptot IGBT Switching SOA SwSOA IGBT Short Circuit SOA SCSOA DC Forward Current IF Peak Forward Current IFM Conditions Ths = 25C per switch IC = 300 A, VCEM = 1700 V, VCC 1300 V, VGE = 15 V, Tvj =125C voltages measured on auxiliary terminals VCC = 1300 V, VCEM = 1700 V, tp = 10 s, VGE = 15 V, Tvj =125 C Pulse: tp = 1ms, Ths = 50C 5SNS 0150V170100 Maximum Rated Values (cont.) Parameter (Tvj = 25C, unless specified otherwise) Symbol Conditions Values Unit Junction Temperature Tvj - 40 ~ 150 C Storage Temperature Ttstg/Tcop - 40 ~ 125 C 4000 V Isolation Voltage Mounting Viso 1 min, f = 50Hz Base to Heatsink (M6) Hole 6.5mm diameter 2~3 Nm Main Terminals M6 screws, max. insertion depth :10mm 3~5 Nm PCB mounting Self tapping screw, Hole 2.5mm diameter, 6.0mm deep Gate, Emitter Aux. Spring pins, pitch of pins = 4mm, pcb thickness = 1.6mm IGBT Characteristic Values Parameter Collector-Emitter Saturation Voltage Symbol (Tvj = 25C, unless specified otherwise) Conditions VCE(sat)* IC = 150 A, VGE = 15 V min. typ. Tvj = 25 C 2.40 Tvj = 125 C 2.80 max. Unit 2.80 V V Collector Cut-off Current ICES VCE = 1700 V, VGE = 0 V, Tvj = 125 C TBD mA Gate-Emitter leakage Current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C 500 nA 6.5 V Gate-Emitter Threshold Voltage VGE(TO) IC = 20 mA, VCE = VGE Total Gate Charge Qge Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) tf Turn-on Switching Energy Eon Turn-off Switching Energy Eoff Module stray Inductance Plus to Minus Ls DC Resistance terminal-chip RCC'+EE' 4.5 IC = 150 A, VCE = 900 V, VGE = -15 to 15 V VCE = 25 V, VGE = 0 V, f = 1MHz IC = 150 A, VCC = 600 V,Rgon = 10 , Tvj = 125 C, VGE = 15 V IC = 150 A, VCC = 600 V, Rgoff = 10 , Tvj = 125 C,VGE = 15 V Rgon = 10 IC = 150 A, Tvj = 125 C, VCC = 600 V, VGE = 15 V, inductive load, integrated up Rgoff = 10 to: 3% VCE (Eon), 1% IC (Eoff) TBD nC TBD nF TBD nF TBD nF TBD s TBD s TBD s TBD s 60.0 mJ 40.0 mJ 20 Ths = 25 C Ths = 125 C 1.4 1.9 nH m * Note 1: Collector emitter saturation voltage is given at die level. Doc. No. 5SYA1532-00 Sep. 01 2 of 4 5SNS 0150V170100 Diode Characteristic Values Parameter (Tvj = 25C, unless specified otherwise) Symbol Conditions typ. max. Tvj = 25 C 1.90 2.30 Tvj = 125 C 2.00 Forward Voltage VF* IF = 150 A Reverse Recovery Current Irrm Reverse Recovery Charge Qrr Reverse Recovery Time trr IF = 150 A, Rgon = 10 , VCC = 600 V, VGE = 15 V, Tvj = 125 C min. IF = 150 A, Tvj = 125 C, VCC = 600 V, Rgon = 10 , VGE = 15 V, inductive load, fully integrated Ths = 25 C Resistance terminal-chip RCC'+EE' Ths = 125 C * Note 2: Forward voltage is given at die level Reverse Recovery Energy Erec Thermal Characteristics Parameter Symbol IGBT Thermal Resistance Junction to Heatsink Rth j-h Igbt Diode Thermal Resistance Junction to Heatsink Rth j-h Diode Equivalent IGBT Thermal Resistance Junct. to Case Rth j-c Igbt Equivalent Diode Thermal Resistance Junct. to Case Rth j-c Diode Temperature sensor PTC Unit V TBD A TBD C TBD s 24.0 mJ 1.4 1.9 m (Tj = 25C, unless specified otherwise) Conditions min. typ. max. Unit 0.220 C/W Heatsink: flatness < +/- 50 m, roughness < 6 m without ridge Thermal grease: thickness: 30 m < t < 50 m 0.390 C/W 0.090 C/W 0.180 C/W Thermistor : R=1k 3%@25C,B-value (25C/100C): -760K 2% Mechanical Properties Parameter Dimensions Symbol Conditions L* W* H Typical , see outline drawing min. typ. max. Unit 123 * 106.5 * 34.5 mm Clearance Distance DC acc. IEC 664-1 and Term. to base: prEN50124-1:1995 Term. to term: 13.5 mm 11 mm Surface Creepage Distance DSC acc. IEC 664-1 and Term. to base: prEN50124-1:1995 Term. to term: 14 mm 11.5 mm Weight 330 gr ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1532-00 Sep. 01 3 of 4 5SNS 0150V170100 Electrical configuration Outline drawing ABB Semiconductors reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 Email Info@ch.abb.com Internet www.abbsem.com Doc. No. 5SYA1532-00 Sep. 01