HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6712
Issued Date : 1993.01.13
Revised Date : 2004. 04.14
Page No. : 1/4
HTIP122 HSMC Produc t Specification
HTIP122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP122 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature...................................................... -55 ~ +150 °C
Juncti on Tempe rature.............................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)............................................... 65 W
Total Power Dissipation (Ta=25°C)................................................. 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................................. 100 V
BVCEO Collector to Emitter Voltage.............................................................................................. 100 V
BVEBO Emitter to Base Voltage....................................................................................................... 5 V
IC Collector Current (Continuous)...................................................................................................... 5 A
IC Collector Current (Peak)................................................................................................................ 8 A
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA, IE=0
ICBO - - 200 uA VCB=100V
ICEO - - 500 uA VCE=100V
IEBO - - 2 mA VEB=5V
*VCE(sat)1 - - 2 V IC=3A, IB=12mA
*VCE(sat)2 - - 4 V IC=5A, IB=20mA
*VBE(on) - - 2.5 V IC=3A, VCE=3V
*hFE1 1 - - K IC=0.5A, VCE=3V
*hFE2 1 - - K IC=3A, VCE=3V
Cob - - 200 pF VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Darlingto n Schematic
R2R1
C
E
B
TO-220
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6712
Issued Date : 1993.01.13
Revised Date : 2004. 04.14
Page No. : 2/4
HTIP122 HSMC Produc t Specification
Characteristics Curve
Current Gain & Collector Curren t
10
100
1000
10000
100000
1 10 100 1000 10000
Coll e c tor Current - I
C
(mA)
hFE
25oC
125oC75oC
hFE @ VCE=3V
Saturation Voltage & Collect or Current
100
1000
10000
100 1000 10000
Collector Curren t-I
C
(mA)
Sat u r ation Volt ag e (m V)
V
CE(sat)
@ I
C
=250I
B
125
o
C75
o
C
25
o
C
Saturation Voltage & Collcetor Curren t
100
1000
10000
1000 10000
Coll e c tor Current - I
C
(mA)
Saturation Voltage (mV)
VCE(sat) @ IC=2000IB
25oC
75oC
125oC
Saturation Voltage & Colltct or Cu rrent
100
1000
10000
100 1000 10000
Coll e c tor Current - I
C
(mA)
Saturation Voltage (mV)
VCE(sat) @ IC=500IB
25oC
75oC
125oC
ON Voltage & Col lcet or Current
100
1000
10000
100 1000 10000
Collector Curren t-I
C
(mA)
O N Voltage ( m V)
V
BE(ON)
@ V
CE
=3V
25
o
C75
o
C
125
o
C
Capaci t an ce & Rev er se-Biased Vol t age
10
100
1000
0.1 1 10 100
R evers e- Biased Voltage ( V)
Capacita nce (pF)
Cob
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6712
Issued Date : 1993.01.13
Revised Date : 2004. 04.14
Page No. : 3/4
HTIP122 HSMC Produc t Specification
Switching Time & C ollector C ur rent
0.1
1
10
110
Collector Cu rr ent (A)
Switching Times ( us)...
Tstg
V
CC
=30V, I
C
=250I
B1
=-250I
B2
Tf
Ton
Safe Operat ing Area
1
10
100
1000
10000
100000
1 10 100
Collector-Emit t er For w a r d Voltag e ( V)
Collect or Cur r ent (m A
)
P
T
=1ms
P
T
=100ms
P
T
=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6712
Issued Date : 1993.01.13
Revised Date : 2004. 04.14
Page No. : 4/4
HTIP122 HSMC Produc t Specification
TO-220AB Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controll i ng dimensi on: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any questi on with packi ng specifi cation or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 A l l oy; solder pl ating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Mic roel ectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al Pa rk Hsi n-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax: 886-3-5982931
AB
E
G
IK
M
OP
3
2
1
C
N
H
D
4
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Pac k age
HSMC Package Code: E
Marking:
Date Code Control Code
H
1IP
22 T
