VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.1 A FEATURES * Low profile, axial leaded outline * High frequency operation Cathode * Very low forward voltage drop Anode * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance DO-204AL * Guard ring for enhanced ruggedness and long term reliability PRODUCT SUMMARY Package DO-204AL (DO-41) IF(AV) 1.1 A VR 90 V, 100 V VF at IF See Electrical table IRM 1.0 mA at 125 C TJ max. 150 C Diode variation Single die EAS 1.0 mJ * Compliant to RoHS Directive 2002/95/EC * Designed and qualified for commercial level * Halogen-free according to IEC 61249-2-21 definition (-M3 only) DESCRIPTION The VS-11DQ... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 1.1 A Rectangular waveform VRRM IFSM tp = 5 s sine VF 1 Apk, TJ = 25 C TJ Range 90/100 V 85 A 0.85 V - 40 to 150 C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM VS-11DQ09 VS-11DQ09-M3 VS-11DQ10 VS-11DQ10-M3 UNITS 90 90 100 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 4 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 0.5 A, L = 8 mH 1.0 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A Repetitive avalanche current Revision: 21-Sep-11 50 % duty cycle at TC = 75 C, rectangular waveform 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 1.1 85 A 14 Document Number: 93207 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 C 2A 1A TJ = 125 C 2A Maximum reverse leakage current See fig. 2 Typical junction capacitance Typical series inductance Maximum voltage rate of change IRM (1) CT LS dV/dt TJ = 25 C VR = Rated VR TJ = 125 C VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 C Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.85 0.96 V 0.68 0.78 0.5 mA 1.0 35 pF 8.0 nH 10 000 V/s VALUES UNITS - 40 to 150 C Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg TEST CONDITIONS Maximum thermal resistance, junction to ambient RthJA DC operation Without cooling fin 100 Typical thermal resistance, junction to lead RthJL DC operation See fig. 4 81 0.33 Approximate weight Marking device C/W g 0.012 Case style DO-204AL (DO-41) oz. 11DQ09 11DQ10 Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 21-Sep-11 Document Number: 93207 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3 IF - Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 10 Allowable Case Temperature (C) 150 T = 150 C T = 125 C T = 25 C 1 0.1 120 DC 90 60 Square wave (D = 0.50) 80 % Rated VR applied 30 see note (1) 0 0 0.4 0.8 1.2 0 1.6 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 93207_01 0.3 0.6 0.9 1.2 1.5 IF(AV) - Average Forward Current (A) 93207_04 Fig. 4 - Maximum Ambient Temperature vs. Average Forward Current 10 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 Average Power Loss (W) IR - Reverse Current (mA) 0.8 1 TJ = 150 C 0.1 TJ = 125 C 0.01 0.001 TJ = 25 C 0.0001 0.6 RMS Limit 0.2 0 0 0 20 40 60 80 0 100 TJ = 25 C 10 40 60 80 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 100 IFSM - Non-Repetitive Surge Current (A) T (pF) CT - Junction Capacitance 100 20 0.6 0.9 1.2 1.5 Fig. 5 - Forward Power Loss Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 0 0.3 Average Forward Current - IF(AV) (A) 93207_05 VR - Reverse Voltage (V) 93207_02 93207_03 DC 0.4 100 At Any Rated Load Condition And With rated VRRM Applied Following Surge 10 10 93207_06 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 21-Sep-11 Document Number: 93207 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 11 D Q 10 TR -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - 11 = 1.1 A (axial and small packages - current is x 10) 3 - D = DO-41 package 4 - Q = Schottky Q.. series 5 - 10 = Voltage ratings 6 - TR = Tape and reel package 09 = 90 V 10 = 100 V None = Bulk package 7 - Environmental digit None = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-11DQ09 1000 1000 Bulk VS-11DQ09TR 5000 5000 Tape and reel VS-11DQ09-M3 1000 1000 Bulk VS-11DQ09TR-M3 5000 5000 Tape and reel VS-11DQ10 1000 1000 Bulk VS-11DQ10TR 5000 5000 Tape and reel VS-11DQ10-M3 1000 1000 Bulk VS-11DQ10TR-M3 5000 5000 Tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95241 Part marking information www.vishay.com/doc?95304 Packaging information www.vishay.com/doc?95338 Revision: 21-Sep-11 Document Number: 93207 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Axial DO-204AL (DO-41) DIMENSIONS in millimeters (inches) 2.70 (0.106) DIA. 2.29 (0.090) Cathode band 27.0 (1.06) MIN. (2 places) 5.21 (0.205) MAX. 27.0 (1.06) MIN. (2 places) 1.27 (0.050) MAX. Flash (2 places) 5.21 (0.205) MAX. 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 2.70 (0.106) DIA. 2.29 (0.090) Revision: 29-Aug-11 Document Number: 95241 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000