PD - 95633A IRF7420PbF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -12V 14m@VGS = -4.5V -11.5A 17.5m@VGS = -2.5V 26m@VGS = -1.8V -9.8A -8.1A Description These P-Channel HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. S S S G The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. 1 8 2 7 3 6 4 5 A D D D D SO-8 Top View Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -12 -11.5 -9.2 -46 2.5 1.6 20 8 -55 to +150 V A W mW/C V C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Max. Units 50 C/W 1 8/25/06 IRF7420PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 --- --- -0.4 32 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.007 --- --- --- --- --- --- --- --- --- 38 8.1 8.7 8.8 8.8 291 225 3529 1013 656 Max. Units Conditions --- V VGS = 0V, I D = -250A --- V/C Reference to 25C, I D = -1mA 14 VGS = -4.5V, ID = -11.5A 17.5 m VGS = -2.5V, ID = -9.8A 26 VGS = -1.8V, ID = -8.1A -0.9 V VDS = VGS , ID = -250A --- S VDS = -10V, ID = -11.5A -1.0 VDS = -9.6V, VGS = 0V A -25 VDS = -9.6V, VGS = 0V, T J = 70C -100 nA VGS = -8V 100 VGS = 8V --- ID = -11.5A --- nC VDS = -6V --- VGS = -4.5V 13 VDD = -6V, VGS = -4.5V ns 13 ID = -1.0A 437 RD = 6 338 RG = 6 --- VGS = 0V --- pF VDS = -10V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units -2.5 -46 --- --- --- --- 62 61 -1.2 93 92 A V ns C Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by Surface mounted on 1 in square Cu board, t 10sec. max. junction temperature. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7420PbF 100 VGS TOP -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V 10 1 0.1 -1.0V VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 100 10 1 -1.0V 20s PULSE WIDTH Tj = 150C 20s PULSE WIDTH Tj = 25C 0.1 0.01 0.1 1 10 0.1 100 -VDS, Drain-to-Source Voltage (V) -I D , Drain-to-Source Current (A) 100 TJ = 150 C TJ = 25 C 1 V DS = -10V 20s PULSE WIDTH 0.1 0.5 1.0 1.5 2.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 1. Typical Output Characteristics 10 1 -VDS, Drain-to-Source Voltage (V) 2.5 2.0 ID = -11.5A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7420PbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 5000 C, Capacitance(pF) 4500 4000 Ciss 3500 Coss = Cds + Cgd 3000 2500 2000 Coss 1500 Crss 1000 500 -VGS , Gate-to-Source Voltage (V) 6 5500 0 10 4 3 2 1 100 0 10 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 30 40 50 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 20 QG , Total Gate Charge (nC) -VDS, Drain-to-Source Voltage (V) 10 TJ = 150 C TJ = 25 C 1 100 100us 1ms 10 10ms 0.1 0.2 TC = 25 C TJ = 150 C Single Pulse V GS = 0 V 0.4 0.6 0.8 1.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 V DS=-9.6V V DS=-6V 5 0 1 ID = -11.5A 1.2 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7420PbF 12 VDS -ID , Drain Current (A) VGS 9 RD D.U.T. RG + VDD VGS 6 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 3 td(on) tr t d(off) tf VGS 0 10% 25 50 75 100 125 150 TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response(Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.025 0.020 0.015 ID = -11.5A 0.010 0.005 0.0 2.0 4.0 6.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 8.0 RDS ( on ) , Drain-to-Source On Resistance ( ) ( RDS(on), Drain-to -Source On Resistance) IRF7420PbF 0.08 0.06 VGS = -1.8V 0.04 VGS = -2.5V 0.02 VGS = -4.5V 0 0.0 10.0 20.0 30.0 40.0 50.0 -ID , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit www.irf.com 1.0 400 0.9 350 0.8 300 0.7 Power (W) -VGS(th) ( V ) IRF7420PbF ID = -250A 0.6 250 200 0.5 150 0.4 100 0.3 50 0 0.2 -75 -50 -25 0 25 50 75 100 TJ , Temperature ( C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 125 150 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 Time (sec) Fig 16. Typical Power Vs. Time 7 IRF7420PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) ' ,1&+(6 0,1 0$; $ $ E F ' ( H %$6,& H %$6,& + . / \ ',0 % $ + ( >@ $ ; H H ;E >@ $ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & \ >@ ;/ ;F & $ % 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (Lead-Free) (;$03/(7+,6,6$1,5) 026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 8 ;;;; ) '$7(&2'( <:: 3 '(6,*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 www.irf.com IRF7420PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2006 www.irf.com 9