Parameter Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -11.5
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -9.2 A
IDM Pulsed Drain Current -46
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 20 mW /° C
VGS Gate-to-Source Voltage ±8 V
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C
8/25/06
www.irf.com 1
IRF7420PbF
HEXFET® Power MOSFET
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
lUltra Low On-Resistance
lP-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lLead-Free
PD - 95633A
Parameter Max. Units
RθJA Maximum Junction-to-Ambient50 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
Top View
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
SO-8
VDSS RDS(on) max ID
-12V 14mΩ@VGS = -4.5V -11.5A
17.5mΩ@VGS = -2.5V -9.8A
26mΩ@VGS = -1.8V -8.1A
IRF7420PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
trr Reverse Recovery Time ––– 62 93 ns TJ = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge ––– 61 92 µC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
A
-46



-2.5

S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Surface mounted on 1 in square Cu board, t ≤ 10sec.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, I D = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 14 VGS = -4.5V, ID = -11.5A
 ––– 17.5 VGS = -2.5V, ID = -9.8A
 ––– 26 VGS = -1.8V, I D = -8.1A
VGS(th) Gate Threshold Voltage -0.4 ––– -0.9 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 32 ––– ––– S VDS = -10V, ID = -11.5A
––– ––– -1.0 VDS = -9.6V, VGS = 0V
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8V
Gate-to-Source Reverse Leakage ––– ––– 10 0 VGS = 8V
QgTotal Gate Charge –– – 38 – –– ID = -11.5A
Qgs Gate-to-Source Charge ––– 8.1 ––– nC VDS = -6V
Qgd Gate-to-Drain ("Miller") Charge ––– 8.7 ––– VGS = -4.5V
td(on) Turn-On Delay Time ––– 8.8 13 VDD = -6V, VGS = -4.5V
trRise Time ––– 8.8 13 ID = -1.0A
td(off) Turn-Off Delay Time ––– 291 4 37 RD = 6Ω
tfFall Time ––– 225 338 RG = 6 Ω
Ciss Input Capacitance ––– 3529 ––– VGS = 0V
Coss Output Capacitance ––– 1013 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 656 ––– ƒ = 1.0MHz
IGSS
µA
mΩ
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
IRF7420PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Tem pera t ur e ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-11.5A
0.1
1
10
100
0.5 1.0 1.5 2.0 2.5
V = -10V
20µs PULSE WIDTH
DS
-V , Gate-to-Sou rce Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1 110 100
-VDS, Drain-t o-Source Volt age (V)
0.01
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-1.0V
20µs PULSE WI D TH
Tj = 25°C
VGS
TOP -7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
0.1 110 100
-VDS, Drain-t o-Source Volt age (V)
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-1.0V
20µs PULSE WI D TH
Tj = 150°C
VGS
TOP -7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
IRF7420PbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
010 20 30 40 50
0
1
2
3
4
5
6
Q , Total Gate Charge (nC)
-V , Gat e-to-Source Voltage (V)
G
GS
I =
D-11.5A V =-6V
DS
V =-9.6V
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
-V ,Source-to-Drain Voltage (V)
-I , Reverse Dr ain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Volta ge (V)
-I , Drain Cur rent (A)I , Drain Curr ent (A)
DS
D
100us
1ms
10ms
110 100
-VDS, Drain-to-Source Voltage ( V)
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
IRF7420PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1 . Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
3
6
9
12
T , Case Tempera ture ( C)
-I , Dr ain Current ( A)
°
C
D
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
IRF7420PbF
6www.irf.com
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
QG
QGS QGD
V
G
Charge
D.U.T. VD
S
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
0.0 2.0 4.0 6.0 8.0
-VGS, Gate -to -Source Voltage (V)
0.005
0.010
0.015
0.020
0.025
RDS(on)
, Drain-to -Source On Resistance (
Ω)
ID = -11.5A
0.0 10.0 20.0 30.0 40.0 50.0
-I D , Drai n Current ( A )
0
0.02
0.04
0.06
0.08
RDS ( on ) , Drain-to-Source On Resistance (
Ω )
VGS = -2.5V
VGS = -1.8V
VGS = -4.5V
IRF7420PbF
www.irf.com 7
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
-75 -50 -25 025 50 75 100 125 150
TJ , Temperatur e ( °C )
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-VGS(th) ( V )
ID = -250µA
Fig 16. Typical Power Vs. Time
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Time (sec)
0
50
100
150
200
250
300
350
400
Power (W)
IRF7420PbF
8www.irf.com
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information (Lead-Free)
'$7(&2'(<::
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IRF7420PbF
www.irf.com 9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2006
330. 0 0
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EI A-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .3 18 )
7.9 ( .3 12 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)