von MMBTAO5 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIT Ere)<t POWER SEMICONDUCTOR Features e Epitaxial Planar Die Construction Complementary PNP Types Available SOT-23 (MMBTA55 / MMBTAS56) | fea Dim | Min | Max Ideal for Medium Power Amplification and [e] oT A 0.37 | 0.51 Switching F B | 1.19 | 1.40 - TOP VIEW BC c 2.10 2.50 Mechanical Data 4 D | 089 | 105 B E | Case: SOT-23, Molded Plastic 4 ep E]__e E | 045 | 061 e Terminals: Solderable per MIL-STD-202, | G ae G 1.78 | 2.05 Method 208 }e 4 >| H 2.65 | 3.05 Terminal Connections: See Diagram a J 0.013 | 0.15 MMBTAO5 Marking: K1H, R1H (a lat + Iw Tose P1310 * MMBTAO6 Marking: K1G, R1G aaah =F e Weight: 0.008 grams (approx.) MI 5 O76 - 78 All Dimensions in mm Maximum Ratings @ Ta= 25C unless otherwise specified Characteristic Symbol MMBTAO05 MMBTAO06 Unit Collector-Base Voltage VcBo 60 80 Vv Collector-Emitter Voltage VcEo 60 80 Vv Emitter-Base Voltage VEBO 4.0 Vv Collector Current - Continuous (Note 1) Ic 500 mA Power Dissipation (Note 1) Pg 350 mw Thermal Resistance, Junction to Ambient (Note 1) Roa 357 KW Operating and Storage and Temperature Range Tj, Tste -55 to +150 C Electrical Characteristics @ Ta = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage vMerAe ViBR)cB0 60 __ V Io = 100pA, le = 0 Collector-Emitter Breakdown Voltage MMB tAce V(BR)CEO 60 __ V Io = 1.0MA, Ig =0 Emitter-Base Breakdown Voltage V(BR)EBO 4.0 Vv le = 100A, Ic = 0 Collector Cutoff Current MMBTAO5 Vos = GOV, IE=0 MMBTAQ6 | 'C80 100 nA | Vog = 80V, le=0 Collector Cutoff Current MMBTAO5 Voce = GOV, Io = OV mMBTAGe | _ [CES 100 nA | Vce=80V, Igo = OV ON CHARACTERISTICS (Note 2) lo= 10mA, Voce = 1.0V DC Current Gain hFe 100 Io = 100mA, Vor = 1.0V Collector-Emitter Saturation Voltage VcE(SAT) 0.25 Vv I = 100mA, Ip = 10mA Base- Emitter Saturation Voltage VBE(SAT) 1.2 Vv Io = 100mA, Voce = 1.0V SMALL SIGNAL CHARACTERISTICS a : Voce = 2.0V, Ic = 10mA, Current Gain-Bandwidth Product fr 100 MHz f= 100MHz Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width < 300us, duty cycle < 2%. DS30037 Rev. A-2 1 of 1 MMBTA05 / MMBTAQO6