P-Channel JFET Switch
2N5114 – 2N5116
GENERAL DESCRIPTION
Ideal for inverting switching or "Virtual Gnd" switching into
inverting input of Op. Amp. No driver is required and ±10VAC
signals can be handled us ing only +5V logic (TTL or CMOS).
FEATURES
••Low ON Resistance
••ID(off)<500pA
••Swit ches directly from TTL Logic
ABSOLUTE M AXIM UM R A T INGS
(TA = 25oC unless o th erw ise noted)
Gate- Dr ain or Gate -So urce Voltage . . . . . . . . . . . . . . . . . 30V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Stor age Temper at ure R a nge. . . . . . . . . . . . . -65oC t o +200oC
Oper at ing Temper atur e Ra nge . . . . . . . . . . . -55oC to +200oC
Lead Tem pera tu re (So ld er ing, 10se c). . . . . . . . . . . . . +300 oC
Power Dissipat ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW /oC
NOTE: Str esses above those listed under "Absol ute M axi mum
Ratings " may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions abov e those indic ated in the operational s ections
of the specifications is not implied. Exposure to absolute maximum
rating con ditions for extended per i ods may affect devic e reliability.
ORDERING INFORMATION
Part Package Temperature Range
2N511 4-16 Herm etic T O- 18 -55 oC to + 200oC
X2N511 4-16 Sort ed Chips in Car rier s -55oC to +200oC
CORPORATION
PIN CONFIGUR ATI O N
S
TO-18
G,C
D
SWIT CHING CHARACTERI STICS (TA = 25oC unless o th erw ise specified)
SYMBOL PARAMETER 2N5114 2N5115 2N5116 UNITS
MAX MAX MAX
tdTurn-ON Delay Time 6 10 12
ns
trRise Time (Note 2) 10 20 30
toff Turn-OFF Dela y Time (Note 2) 6 8 10
tfFall Time (Note 2) 15 30 50
ELECTRICA L CHARACTERI STIC S (TA = 2 5oC unle ss otherwise sp ecif ie d)
SYMBOL PARAMETER 2N5114 2N5115 2N5116 UNITS TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
BVGSS Gate-Source Breakdown Vol tage 30 30 30 V IG = 1µA, VDS = 0
IGSS Gate Reverse Current 500 500 500 pA VGS = 20V, VDS = 0
1.0 1.0 1.0 µAT
A 150oC
ID(off) Drain Cutoff Current
-500 -500 -500 pA VDS = -15V
VGS = 12V (2N5114)
VGS = 7V (2N5115)
VGS = 5V (2N5116)
-1.0 -1.0 -1.0 µA
VPGate-Source Pinch-Off Voltage 5 10 3 6 1 4 V VDS = -15V, ID = -1nA
5508
2N5114 – 2N5116
CORPORATION
ELECTRICA L CHARACTERI STIC S (TA = 2 5oC unle ss otherwise sp ecif ie d) (Con tinu ed)
SYMBOL PARAMETER 2N5114 2N5115 2N5116 UNITS TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
IDSS Drain Current at Zero Gate V oltage
(Note 1) -30 -90 -15 -60 -5 -25 mA
VGS = -0
VDS = -18V (2N5114)
VDS = -15V (2N5115)
VDS = -15V (2N5116)
VGS(f) Forward Gate-Sourc e Voltage -1 -1 -1
V
IG = -1mA, VDS = 0
VDS(on) Drain-Source ON Voltage -1.3 -0.8 -0.6
VGS = 0
ID = -15mA (2N5114)
ID = -7mA (2N5115)
ID = -3mA (2N5116)
rDS(on) Static Drain-Source ON Resistance 75 100 150 ΩVGS = 0, ID = -1mA
rds(on) Small-Signal Drain-Source ON
Resistance 75 100 150 VGS = 0, ID = 0, f = 1kHz
Ciss Common-Source Input Capacitance
(Note 2) 25 25 25
pF
VDS = -15V, VGS = 0,
f = 1 mHz
Crss Common-Source Reverse Transf er
Cap acita nce (Note 2) 777
VDS = 0
VGS = 12V (2N5114)
VGS = 7V (2N5115)
VGS = 5V (2N5116)
f = 1 mHz
NOTES 1. Pulse test; duration = 2ms.
2. For design reference only, not 100% tested.
TEST CONDITIONS
2N5114 2N5115 2N5116
VDD -10V -6V -6V
VGG 20V 12V 8V
RL430Ω910Ω2KΩ
RG100Ω220Ω390Ω
ID(ON) -15mA -7mA -3mA
VIN -12V -7V -5V
INPUT
OUTPUT
-6V
10%
90%
90%
10%
V
IN
r
t
d
t
r
t
10%
OFF
t
0040
V
DS(ON)
V
DD
51Ω
1.2K
1.2K
51Ω
SAMPLING
SCOPE
0.1µF
0050
V
GG
IN
51Ω
7.5K
V
SAMPLING SCOPE
RISE TIME 0.4ns
INPUT RESISTANCE 10MΩ
INPUT CAPACITANCE 1.5pF
R
L
G
R
TYPICA L PERFORMANCE CHARACT ERISTICS
0080
4.0
3.0
2.0
1,000 3,000 10,000 30,000 100,000
10.0
9.0
8.0
7.0
6.0
5.0
V
p
(V)
V
DS
= 20V
V
GS
= 0
(pulsed)
1.0
0.9
0.8
0.7
0.6
0.5
V
p
vs g
fs
g
fs
(µV)
0070
4.0
3.0
2.0
1 3 10 30 100
10.0
9.0
8.0
7.0
6.0
5.0
V
p
(V)
V
DS
= 20V
V
GS
= 0
(pulsed)
1.0
0.9
0.8
0.7
0.6
0.5
V
p
vs I
DSS
DSS
t (mA)
0060
4.0
3.0
2.0
10 30 100 300 1,000
1.0
0.9
0.8
0.7
0.6
0.5
10.0
9.0
8.0
7.0
6.0
5.0
DS(ON)
r (ohms)
V
p
(V)
V
DS
V
GS
= 0.1V
= 0
V
p DS(ON)
vs r
