SPICE MODEL: MMBT2907A MMBT2907A PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * Epitaxial Planar Die Construction * * Ideal for Medium Power Amplification and Switching SOT-23 Complementary NPN Type Available (MMBT2222A) Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 A C Available in Lead Free/RoHS Compliant Version B Mechanical Data * * Dim B C TOP VIEW E D E G Case: SOT-23 H Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 * * * * Moisture Sensitivity: Level 1 per J-STD-020C * * * Marking (See Page 2): K2F K J Terminal Connections: See Diagram M L C Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0 8 All Dimensions in mm E B H Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) Maximum Ratings @ TA = 25C unless otherwise specified Symbol MMBT2907A Unit Collector-Base Voltage Characteristic VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5.0 V IC -600 mA Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: Pd 300 mW RqJA 417 C/W Tj, TSTG -55 to +150 C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30040 Rev. 7 - 2 1 of 4 www.diodes.com MMBT2907A a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -60 3/4 V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 3/4 V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 3/4 V IE = -10mA, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125C OFF CHARACTERISTICS (Note 3) Collector Cutoff Current ICBO 3/4 -10 nA mA Collector Cutoff Current ICEX 3/4 -50 nA VCE = -30V, VEB(OFF) = -0.5V IBL 3/4 -50 nA VCE = -30V, VEB(OFF) = -0.5V hFE 75 100 100 100 50 3/4 3/4 3/4 300 3/4 3/4 IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = Collector-Emitter Saturation Voltage VCE(SAT) 3/4 -0.4 -1.6 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) 3/4 -1.3 -2.6 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo 3/4 8.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo -- 30 pF VEB = -2.0V, f = 1.0MHz, IC = 0 fT 200 3/4 MHz Turn-On Time toff 3/4 45 ns Delay Time td 3/4 10 ns Rise Time tr 3/4 40 ns Turn-Off Time toff 3/4 100 ns Storage Time ts 3/4 80 ns Fall Time tf 3/4 30 ns Base Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain -10V -10V -10V -10V -10V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -20V, IC = -50mA, f = 100MHz SWITCHING CHARACTERISTICS VCC = -30V, IC = -150mA, IB1 = -15mA VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA Ordering Information (Note 4) Notes: Device Packaging Shipping MMBT2907A-7 SOT-23 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT2907A-7-F. Marking Information YM K2F = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K2F Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30040 Rev. 7 - 2 2 of 4 www.diodes.com MMBT2907A 30 20 300 C, CAPACITANCE (pF) PD, POWER DISSIPATION (mW) 350 250 200 150 100 Cibo 10 5.0 Cobo 50 0 0 25 50 75 100 125 150 175 1.0 -0.1 200 -1.0 VCE COLLECTOR-EMITTER VOLTAGE (V) TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature -30 -10 REVERSE VOLTS (V) Fig. 2 Typical Capacitance 1.6 1.4 IC = 300mA IC = 10mA IC = 100mA 1.2 IC = 1mA IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region DS30040 Rev. 7 - 2 3 of 4 www.diodes.com MMBT2907A 1000 VCE = 5V IC = 10 IB 0.5 TA = 150C 0.4 hFE, DC CURRENT GAIN (NORMALIZED) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.6 0.3 TA = 150C TA = 25C 0.2 0.1 100 TA = 25C TA = -50C 10 TA = -50C 0 1 1 10 1000 100 1 IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4, Collector Emitter Saturation Voltage vs. Collector Current 1.0 1000 VCE = 5V fT, GAIN BANDWIDTH PRODUCT (MHz) VBE(ON), BASE EMITTER VOLTAGE (V) 1000 100 10 0.9 TA = -50C 0.8 0.7 0.6 TA = 25C 0.5 0.4 TA = 150C 0.3 0.2 VCE = 5V 100 10 1 0.1 1 10 100 DS30040 Rev. 7 - 2 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 6, Base Emitter Voltage vs. Collector Current 4 of 4 www.diodes.com MMBT2907A