W25Q80EW
Publication Release Date: August 18, 2018
- 1 - inary -Revision J
1.8V 8M-BIT
SERIAL FLASH MEMORY WITH
DUAL/QUAD SPI & QPI
W25Q80EW
- 2 -
Table of Contents
1. GENERAL DESCRIPTIONS ............................................................................................................. 5
2. FEATURES ....................................................................................................................................... 5
3. PACKAGE TYPES: ........................................................................................................................... 6
3.1 Pin Configuration SOIC 150/208-mil AND VSOP 150-mil .................................................... 6
3.2 PAD Configuration WSON 6x5-MM AND USON 2x3-mm ................................................... 6
3.3 Pin Description SOIC150/208-mil, VSOP 150-mil, WSON 6x5-MM,USON 2x3 .................. 6
3.4 Ball Configuration WLCSP ................................................................................................... 7
3.5 Ball Description WLCSP ....................................................................................................... 7
4. PIN DESCRIPTIONS ........................................................................................................................ 8
4.1 Chip Select (/CS) .................................................................................................................. 8
4.2 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3) ..................................... 8
4.3 Write Protect (/WP) .............................................................................................................. 8
4.4 HOLD (/HOLD) ..................................................................................................................... 8
4.5 Serial Clock (CLK) ................................................................................................................ 8
5. BLOCK DIAGRAM ............................................................................................................................ 9
6. FUNCTIONAL DESCRIPTION ....................................................................................................... 10
6.1 SPI / QPI Operations .......................................................................................................... 10
6.2 SPI OPERATIONS ............................................................................................................. 10
6.2.1 Standard SPI Instructions ..................................................................................................... 10
6.2.2 Dual SPI Instructions ............................................................................................................ 10
6.2.3 Quad SPI Instructions ........................................................................................................... 11
6.3 QPI Instructions .................................................................................................................. 11
6.3.1 Hold Function ....................................................................................................................... 11
6.4 WRITE PROTECTION ....................................................................................................... 12
6.4.1 Write Protect Features ......................................................................................................... 12
7. STATUS REGISTERS AND INSTRUCTIONS ............................................................................... 13
7.1 STATUS REGISTERs ........................................................................................................ 13
7.1.1 BUSY Status (BUSY) – Status Only .................................................................................. 13
7.1.2 Write Enable Latch Status (WEL) – Status Only ............................................................... 13
7.1.3 Block Protect Bits (BP2, BP1, BP0) – Volatile/Non-Volatile Writable ................................ 13
7.1.4 Top/Bottom Block Protect (TB) – Volatile/Non-Volatile Writable ....................................... 13
7.1.5 Sector/Block Protect (SEC) – Volatile/Non-Volatile Writable ............................................ 13
7.1.6 Complement Protect (CMP) – Volatile/Non-Volatile Writable ............................................ 14
7.1.7 Status Register Protect (SRP, SRL) – Volatile/Non-Volatile Writable ............................... 14
7.1.8 Erase/Program Suspend Status (SUS) –Status Only ........................................................ 15
7.1.9 Security Register Lock Bits (LB[3:0]) – Volatile/Non-Volatile OTP Writable ...................... 15
W25Q80EW
Publication Release Date: August 18, 2018
- 3 - -Revision J
7.1.10 Quad Enable (QE) – Volatile/Non-Volatile Writable ........................................................ 15
7.1.11 Reserved Bits – Non Functional ...................................................................................... 16
7.1.12 Status Register Memory Protection (CMP = 0) ................................................................... 17
7.1.13 Status Register Memory Protection (CMP = 1) ................................................................... 18
7.1.14 INSTRUCTIONS ................................................................................................................. 19
7.1.15 Manufacturer and Device Identification .............................................................................. 19
7.1.16 Instruction Set Table 1 (Standard SPI Instructions)(1)......................................................... 20
7.1.17 Instruction Set Table 2 (Dual/Quad SPI Instructions) ......................................................... 21
7.1.18 Instruction Set Table 3 (QPI Instructions) (1) ....................................................................... 22
7.2 Instruction Descriptions ...................................................................................................... 24
7.2.1 Write Enable (06h) ............................................................................................................... 24
7.2.2 Write Enable for Volatile Status Register (50h) .................................................................... 24
7.2.3 Write Disable (04h) ............................................................................................................... 25
7.2.4 Read Status Register-1(05h) and Read Status Register-2(35h) .......................................... 26
7.2.5 Write Status Register-1 (01h), Status Register-2 (31h) ........................................................ 27
7.2.6 Read Data (03h) ................................................................................................................... 29
7.2.7 Fast Read (0Bh) ................................................................................................................... 30
7.2.8 Fast Read Dual Output (3Bh) ............................................................................................... 32
7.2.9 Fast Read Quad Output (6Bh) .............................................................................................. 33
7.2.10 Fast Read Dual I/O (BBh) ................................................................................................... 34
7.2.11 Fast Read Quad I/O (EBh) ................................................................................................. 35
7.2.12 Set Burst with Wrap (77h) .................................................................................................. 37
7.2.13 Page Program (02h) ........................................................................................................... 38
7.2.14 Quad Input Page Program (32h) ........................................................................................ 40
7.2.15 Sector Erase (20h) ............................................................................................................. 41
7.2.16 32KB Block Erase (52h) ..................................................................................................... 42
7.2.17 64KB Block Erase (D8h) ..................................................................................................... 43
7.2.18 Chip Erase (C7h / 60h) ....................................................................................................... 44
7.2.19 Erase / Program Suspend (75h) ......................................................................................... 45
7.2.20 Erase / Program Resume (7Ah) ......................................................................................... 47
7.2.21 Power-down (B9h) .............................................................................................................. 48
7.2.22 Release Power-down / Device ID (ABh) ............................................................................. 49
7.2.23 Read Manufacturer / Device ID (90h) ................................................................................. 51
7.2.24 Read Manufacturer / Device ID Dual I/O (92h) ................................................................... 52
7.2.25 Read Manufacturer / Device ID Quad I/O (94h) ................................................................. 53
7.2.26 Read Unique ID Number (4Bh)........................................................................................... 54
7.2.27 Read JEDEC ID (9Fh) ........................................................................................................ 55
7.2.28 Read SFDP Register (5Ah) ................................................................................................ 56
7.2.29 Erase Security Registers (44h) ........................................................................................... 57
7.2.30 Program Security Registers (42h) ...................................................................................... 58
7.2.31 Read Security Registers (48h) ........................................................................................... 59
W25Q80EW
- 4 -
7.2.32 Set Read Parameters (C0h) ............................................................................................... 60
7.2.33 Burst Read with Wrap (0Ch) ............................................................................................... 61
7.2.34 Enter QPI Mode (38h) ......................................................................................................... 62
7.2.35 Exit QPI Mode (FFh) ........................................................................................................... 63
7.2.36 Enable Reset (66h) and Reset Device (99h) ...................................................................... 64
8. ELECTRICAL CHARACTERISTICS ............................................................................................... 65
8.1 Absolute Maximum Ratings (1) .......................................................................................... 65
8.2 Operating Ranges............................................................................................................... 65
8.3 Power-up Timing and Write Inhibit Threshold .................................................................... 66
8.4 DC Electrical Characteristics: Industrial: ............................................................................ 67
8.5 AC Measurement Conditions .............................................................................................. 68
8.6 AC Electrical Characteristics: ............................................................................................. 69
AC Electrical Characteristics (cont’d) ........................................................................................... 70
8.7 Serial Output Timing ........................................................................................................... 71
8.8 Serial Input Timing .............................................................................................................. 71
8.9 /HOLD Timing ..................................................................................................................... 71
8.10 /WP Timing ......................................................................................................................... 71
9. PACKAGE SPECIFICATION .......................................................................................................... 72
9.1 8-Pin SOIC 208-mil (Package Code SS) ............................................................................ 72
9.2 8-Pin SOIC 150-mil (Package Code SN) ............................................................................ 73
9.3 8-Pin VSOP 150-mil (Package Code SV) ........................................................................... 74
9.4 8-Pad WSON 6x5-mm (Package Code ZP) ....................................................................... 75
9.5 8-Pad USON 2x3-mm (Package Code UXIE) .................................................................... 76
9.6 8-Ball WLCSP (Package Code BY) .................................................................................... 77
9.7 Ordering Information ........................................................................................................... 78
9.8 Valid Part Numbers and Top Side Marking ........................................................................ 79
10. REVISION J1ISTORY ..................................................................................................................... 80
W25Q80EW
Publication Release Date: August 18, 2018
- 5 - -Revision J
1. GENERAL DESCRIPTIONS
The W25Q80EW (8M-bit) Serial Flash memory provides a storage solution for systems with limited space,
pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash
devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP)
and storing voice, text and data. The device operates on a single 1.65V to 1.95V power supply with current
consumption as low as 1mA active and 1µA for power-down. All devices are offered in space-saving
packages.
The W25Q80EW array is organized into 4,096 programmable pages of 256-bytes each. Up to 256 bytes
can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128
(32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q80EW
has 256 erasable sectors and 16 erasable blocks respectively. The small 4KB sectors allow for greater
flexibility in applications that require data and parameter storage. (See figure 2.)
The W25Q80EW supports the standard Serial Peripheral Interface (SPI), and a high performance
Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1
(DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing
equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O when
using the Fast Read Dual/Quad I/O instructions. These transfer rates can outperform standard
Asynchronous 8 and 16-bit Parallel Flash memories.
A Hold pin, Write Protect pin and programmable write protection, with top, bottom or complement array
control, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer
and device identification with a 64-bit Unique Serial Number.
2. FEATURES
Family of SpiFlash Memories
– 8M-bit/1M-byte (1,048,576)
– 256-byte per programmable page
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
– QPI: CLK, /CS, IO0, IO1, IO2, IO3
Highest Performance Serial Flash
– 104MHz Dual/Quad SPI clocks
– 208/416MHz equivalent Dual/Quad SPI
– 50MB/S continuous data transfer rate
– Up to 6X that of ordinary Serial Flash
– Min 100K Program-Erase cycles per sector
– More than 20-year data retention
Low Power, Wide Temperature Range
– Single 1.65V to 1.95V supply
– 1mA active current
-- <1µA Power-down current
– -40°C to +85°C operating range
Flexible Architecture with 4KB sectors
– Uniform Sector Erase (4K-bytes)
– Uniform Block Erase (32K and 64K-bytes)
– Program one to 256 bytes
– Erase/Program Suspend & Resume
Advanced Security Features
– Software and Hardware Write-Protect
– Top/Bottom, 4KB complement array protection
– Lock-Down and Special OTP array protection
– 64-Bit Unique Serial Number for each device
– Discoverable Parameters (SFDP) Register
– 3X256-Byte Security Registers with OTP locks
– Volatile & Non-volatile Status Register Bits
Space Efficient Packaging:
– 8-pin SOIC 150/208-mil
– 8-pin VSOP 150-mil
– 8-pad WSON 6X5-mm
– USON8 2X3mm
– 8-ball WLCSP
– Contact Winbond for KGD and other o
W25Q80EW
- 6 -
3. PACKAGE TYPES:
W25Q80EW is offered in an 8-pin SOIC 208-mil (package code SS), an 8-pin 150-mil width SOIC
(package code SN), an 8-pin VSOP 150-mil (package code SV), an an 8-pad USON 2x3-mm (package
code UX), and an 8-pad WLCSP as shown in figure 1a-1c respectively. Package diagrams and
dimensions are illustrated at the end of this datasheet.
3.1 Pin Configuration SOIC 150/208-mil AND VSOP 150-mil
1
2
3
4
8
7
6
5
/CS
DO (IO1)
/WP (IO2)
GND
VCC
/HOLD (IO3)
DI (IO0)
CLK
Top View
Figure 1a. W25Q80EW Pin Assignments, 8-pin SOIC 150-mil & VSOP 150-mil (Package Code SN,SS, SV)
3.2 PAD Configuration WSON 6x5-MM AND USON 2x3-mm
1
2
3
4
/CS
DO (IO1)
/WP (IO2)
GND
VCC
/HOLD (IO3)
DI (IO0)
CLK
Top View
8
7
6
5
Figure 1b. W2580EW Pad Assignments WSON6X5 & USON 2x3-MM(Package Code ZP, UX)
3.3 Pin Description SOIC150/208-mil, VSOP 150-mil, WSON 6x5-MM,USON 2x3
PIN NO.
PIN NAME
I/O
FUNCTION
1
/CS
I
Chip Select Input
2
DO (IO1)
I/O
Data Output (Data Input Output 1)*1
3
/WP (IO2)
I/O
Write Protect Input ( Data Input Output 2)*2
4
GND
Ground
5
DI (IO0)
I/O
Data Input (Data Input Output 0)*1
6
CLK
I
Serial Clock Input
7
/HOLD (IO3)
I/O
Hold Input (Data Input Output 3)*2
8
VCC
Power Supply
*1 IO0 and IO1 are used for Standard and Dual SPI instructions
*2 IO0 – IO3 are used for Quad SPI instructions
W25Q80EW
Publication Release Date: August 18, 2018
- 7 - Preliminary -Revision J
3.4 Ball Configuration WLCSP
Figure 1c. W25Q80EW Ball Assignments, 8-ball WLCSP (Package Code BY)
3.5 Ball Description WLCSP
BALL NO.
PIN NAME
I/O
FUNCTION
A1
VCC
Power Supply
A2
/CS
I
Chip Select Input
B1
/HOLD (IO3)
I/O
Hold Input (Data Input Output 3)*2
B2
DO (IO1)
I/O
Data Output (Data Input Output 1)*1
C1
CLK
I
Serial Clock Input
C2
/WP (IO2)
I/O
Write Protect Input (Data Input Output 2)*2
D1
DI (IO0)
I/O
Data Input (Data Input Output 0)*1
D2
GND
Ground
*1 IO0 and IO1 are used for Standard and Dual SPI instructions
*2 IO0 – IO3 are used for Quad SPI instructions
W25Q80EW
- 8 -
4. PIN DESCRIPTIONS
4.1 Chip Select (/CS)
The SPI Chip Select (/CS) pin enables and disables device operation. When /CS is high the device is
deselected and the Serial Data Output (DO, or IO0, IO1, IO2, IO3) pins are at high impedance. When
deselected, the devices power consumption will be at standby levels unless an internal erase, program or
write status register cycle is in progress. When /CS is brought low the device will be selected, power
consumption will increase to active levels and instructions can be written to and data read from the device.
After power-up, /CS must transition from high to low before a new instruction will be accepted. The /CS
input must track the VCC supply level at power-up (see “Write Protection” and figure 37). If needed a pull-
up resister on /CS can be used to accomplish this.
4.2 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)
The W25Q80EW supports standard SPI, Dual SPI and Quad SPI operation. Standard SPI instructions
use the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the
rising edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to
read data or status from the device on the falling edge of CLK.
Dual and Quad SPI instructions use the bidirectional IO pins to serially write instructions, addresses or
data to the device on the rising edge of CLK and read data or status from the device on the falling edge of
CLK. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set.
When QE=1, the /WP pin becomes IO2 and /HOLD pin becomes IO3.
4.3 Write Protect (/WP)
The Write Protect (/WP) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (CMP, SEC, TB, BP2, BP1 and BP0) bits and Status
Register Protect (SRP) bits, a portion as small as a 4KB sector or the entire memory array can be
hardware protected. The /WP pin is active low. When the QE bit of Status Register-2 is set for Quad I/O,
the /WP pin function is not available since this pin is used for IO2. See figure 1a-b for the pin configuration
of Quad I/O operation.
4.4 HOLD (/HOLD)
The /HOLD pin allows the device to be paused while it is actively selected. When /HOLD is brought low,
while /CS is low, the DO pin will be at high impedance and signals on the DI and CLK pins will be ignored
(don’t care). When /HOLD is brought high, device operation can resume. The /HOLD function can be
useful when multiple devices are sharing the same SPI signals. The /HOLD pin is active low. When the
QE bit of Status Register-2 is set for Quad I/O, the /HOLD pin function is not available since this pin is
used for IO3. See figure 1a-c for the pin configuration of Quad I/O operation.
4.5 Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See SPI
Operations")
W25Q80EW
Publication Release Date: August 18, 2018
- 9 - Preliminary -Revision J
5. BLOCK DIAGRAM
Figure 2. W25Q80EW Serial Flash Memory Block Diagram
003000h 0030FFh
002000h 0020FFh
001000h 0010FFh
Column Decode
And 256-Byte Page Buffer
Beginning
Page Address Ending
Page Address
W25Q80BV
SPI
Command &
Control Logic
Byte Address
Latch / Counter
Status
Register
Write Control
Logic
Page Address
Latch / Counter
DO (IO1)
DI (IO0)
/CS
CLK
/HOLD (IO3)
/WP (IO2)
High Voltage
Generators
xx0F00h xx0FFFh
•Sector 0 (4KB) •
xx0000h xx00FFh
xx1F00h xx1FFFh
•Sector 1 (4KB) •
xx1000h xx10FFh
xx2F00h xx2FFFh
•Sector 2 (4KB) •
xx2000h xx20FFh
•
•
•
xxDF00h xxDFFFh
•Sector 13 (4KB) •
xxD000h xxD0FFh
xxEF00h xxEFFFh
•Sector 14 (4KB) •
xxE000h xxE0FFh
xxFF00h xxFFFFh
•Sector 15 (4KB) •
xxF000h xxF0FFh
Block Segmentation
Data
Security Register 1 - 3
Write Protect Logic and Row Decode
000000h 0000FFh
SFDP Register
00FF00h 00FFFFh
•Block 0 (64KB) •
000000h 0000FFh
•
•
•
03FF00h 03FFFFh
•Block 3 (64KB) •
030000h 0300FFh
04FF00h 04FFFFh
•Block 4 (64KB) •
040000h 0400FFh
•
•
•
07FF00h 07FFFFh
•Block 7 (64KB) •
070000h 0700FFh
08FF00h 08FFFFh
•Block 8 (64KB) •
080000h 0800FFh
•
•
•
0FFF00h 0FFFFFh
•Block 15 (64KB) •
0F0000h 0F00FFh
003000h 0030FFh
002000h 0020FFh
001000h 0010FFh
Column Decode
And 256-Byte Page Buffer
Beginning
Page Address Ending
Page Address
W25Q80BV
SPI
Command &
Control Logic
Byte Address
Latch / Counter
Status
Register
Write Control
Logic
Page Address
Latch / Counter
DO (IO1)
DI (IO0)
/CS
CLK
/HOLD (IO3)
/WP (IO2)
High Voltage
Generators
xx0F00h xx0FFFh
•Sector 0 (4KB) •
xx0000h xx00FFh
xx1F00h xx1FFFh
•Sector 1 (4KB) •
xx1000h xx10FFh
xx2F00h xx2FFFh
•Sector 2 (4KB) •
xx2000h xx20FFh
•
•
•
xxDF00h xxDFFFh
•Sector 13 (4KB) •
xxD000h xxD0FFh
xxEF00h xxEFFFh
•Sector 14 (4KB) •
xxE000h xxE0FFh
xxFF00h xxFFFFh
•Sector 15 (4KB) •
xxF000h xxF0FFh
Block Segmentation
Data
Security Register 1 - 3
Write Protect Logic and Row Decode
000000h 0000FFh
SFDP Register
00FF00h 00FFFFh
•Block 0 (64KB) •
000000h 0000FFh
•
•
•
03FF00h 03FFFFh
•Block 3 (64KB) •
030000h 0300FFh
04FF00h 04FFFFh
•Block 4 (64KB) •
040000h 0400FFh
•
•
•
07FF00h 07FFFFh
•Block 7 (64KB) •
070000h 0700FFh
08FF00h 08FFFFh
•Block 8 (64KB) •
080000h 0800FFh
•
•
•
0FFF00h 0FFFFFh
•Block 15 (64KB) •
0F0000h 0F00FFh
W25Q80EW
W25Q80EW
- 10 -
6. FUNCTIONAL DESCRIPTION
6.1 SPI / QPI Operations
Figure 3. W25Q80EW Serial Flash Memory Operation Diagram
6.2 SPI OPERATIONS
6.2.1 Standard SPI Instructions
The W25Q80EW is accessed through an SPI compatible bus consisting of four signals: Serial Clock
(CLK), Chip Select (/CS), Serial Data Input (DI) and Serial Data Output (DO). Standard SPI instructions
use the DI input pin to serially write instructions, addresses or data to the device on the rising edge of
CLK. The DO output pin is used to read data or status from the device on the falling edge CLK.
SPI bus operation Mode 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and
Mode 3 concerns the normal state of the CLK signal when the SPI bus master is in standby and data is
not being transferred to the Serial Flash. For Mode 0, the CLK signal is normally low on the falling and
rising edges of /CS. For Mode 3, the CLK signal is normally high on the falling and rising edges of /CS.
6.2.2 Dual SPI Instructions
The W25Q80EW supports Dual SPI operation when using the “Fast Read Dual Output (3Bh)” and “Fast
Read Dual I/O (BBh)” instructions. These instructions allow data to be transferred to or from the device at
two to three times the rate of ordinary Serial Flash devices. The Dual SPI Read instructions are ideal for
quickly downloading code to RAM upon power-up (code-shadowing) or for executing non-speed-critical
Power Up
Standard SPI
Dual SPI
Quad SPI
QPI
Enable QPI
(
38
h
)
Disable QPI
(
FFh
)
SPI Reset
(
66
h
+
99
h
)
QPI Reset
(
66
h
+
99
h
)
Device Initialization
&
Status Register Refresh
(
Non
-
Volatile Cells
)
W25Q80EW
Publication Release Date: August 18, 2018
- 11 - Preliminary -Revision J
code directly from the SPI bus (XIP). When using Dual SPI instructions, the DI and DO pins become
bidirectional I/O pins: IO0 and IO1.
6.2.3 Quad SPI Instructions
The W25Q80EW supports Quad SPI operation when using the “Fast Read Quad Output (6Bh)”, and “Fast
Read Quad I/O (EBh)” instructions. These instructions allow data to be transferred to or from the device
six to eight times the rate of ordinary Serial Flash. The Quad Read instructions offer a significant
improvement in continuous and random access transfer rates allowing fast code-shadowing to RAM or
execution directly from the SPI bus (XIP). When using Quad SPI instructions the DI and DO pins become
bidirectional IO0 and IO1, and the /WP and /HOLD pins become IO2 and IO3 respectively. Quad SPI
instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set.
6.3 QPI Instructions
The W25Q80EW supports Quad Peripheral Interface (QPI) operations only when the device is switched
from Standard/Dual/Quad SPI mode to QPI mode using the “Enter QPI (38h)” instruction. The typical SPI
protocol requires that the byte-long instruction code being shifted into the device only via DI pin in eight
serial clocks. The QPI mode utilizes all four IO pins to input the instruction code, thus only two serial
clocks are required. This can significantly reduce the SPI instruction overhead and improve system
performance in an XIP environment. Standard/Dual/Quad SPI mode and QPI mode are exclusive. Only
one mode can be active at any given time. “Enter QPI (38h)” and “Exit QPI (FFh)” instructions are used to
switch between these two modes. Upon power-up or after a software reset using “Reset (99h)” instruction,
the default state of the device is Standard/Dual/Quad SPI mode. To enable QPI mode, the non-volatile
Quad Enable bit (QE) in Status Register-2 is required to be set. When using QPI instructions, the DI and
DO pins become bidirectional IO0 and IO1, and the /WP and /HOLD pins become IO2 and IO3
respectively. See Figure 3 for the device operation modes.
6.3.1 Hold Function
For Standard SPI and Dual SPI operations, the /HOLD signal allows the W25Q80EW operation to be
paused while it is actively selected (when /CS is low). The /HOLD function may be useful in cases where
the SPI data and clock signals are shared with other devices. For example, consider if the page buffer
was only partially written when a priority interrupt requires use of the SPI bus. In this case the /HOLD
function can save the state of the instruction and the data in the buffer so programming can resume where
it left off once the bus is available again. The /HOLD function is only available for standard SPI and Dual
SPI operation, not during Quad SPI or QPI. The Quad Enable Bit QE in Status Register-2 is used to
determine if the pin is used as /HOLD pin or data I/O pin. When QE=0 (factory default), the pin is /HOLD,
when QE=1, the pin will become an I/O pin, /HOLD function is no longer available.
To initiate a /HOLD condition, the device must be selected with /CS low. A /HOLD condition will activate on
the falling edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the
/HOLD condition will activate after the next falling edge of CLK. The /HOLD condition will terminate on the
rising edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the /HOLD
condition will terminate after the next falling edge of CLK. During a /HOLD condition, the Serial Data
Output (DO) is high impedance, and Serial Data Input (DI) and Serial Clock (CLK) are ignored. The Chip
Select (/CS) signal should be kept active low for the full duration of the /HOLD operation to avoid resetting
the internal logic state of the device.
W25Q80EW
- 12 -
6.4 WRITE PROTECTION
Applications that use non-volatile memory must take into consideration the possibility of noise and other
adverse system conditions that may compromise data integrity. To address this concern, the W25Q80EW
provides several means to protect the data from inadvertent writes.
6.4.1 Write Protect Features
Device resets when VCC is below threshold
Time delay write disable after Power-up
Write enable/disable instructions and automatic write disable after erase or program
Software and Hardware (/WP pin) write protection using Status Register
Write Protection using Power-down instruction
Lock Down write protection until next power-up
One Time Program (OTP) write protection*
* Note: This feature is available upon special flow. Please contact Winbond for details.
Upon power-up or at power-down, the W25Q80EW will maintain a reset condition while VCC is below the
threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 37). While reset, all
operations are disabled and no instructions are recognized. During power-up and after the VCC voltage
exceeds VWI, all program and erase related instructions are further disabled for a time delay of tPUW. This
includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status
Register instructions. Note that the chip select pin (/CS) must track the VCC supply level at power-up until
the VCC-min level and tVSL time delay is reached. If needed a pull-up resister on /CS can be used to
accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register Write
Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page Program, Sector
Erase, Block Erase, Chip Erase or Write Status Register instruction will be accepted. After completing a
program, erase or write instruction the Write Enable Latch (WEL) is automatically cleared to a write-
disabled state of 0.
Software controlled write protection is facilitated using the Write Status Register instruction and setting the
Status Register Protect (SRP, SRL) and Block Protect (CMP, SEC,TB, BP2, BP1 and BP0) bits. These
settings allow a portion as small as 4KB sector or the entire memory array to be configured as read only.
Used in conjunction with the Write Protect (/WP) pin, changes to the Status Register can be enabled or
disabled under hardware control. See Status Register section for further information. Additionally, the
Power-down instruction offers an extra level of write protection as all instructions are ignored except for
the Release Power-down instruction.
W25Q80EW
Publication Release Date: August 18, 2018
- 13 - Preliminary -Revision J
7. STATUS REGISTERS AND INSTRUCTIONS
The Read Status Register-1 and Status Register-2 instructions can be used to provide status on the
availability of the Flash memory array, if the device is write enabled or disabled, the state of write
protection, Quad SPI setting, Security Register lock status and Erase/Program Suspend status. The Write
Status Register instruction can be used to configure the device write protection features, Quad SPI setting
and Security Register OTP lock. Write access to the Status Register is controlled by the state of the non-
volatile Status Register Protect bits (SRP, SRL), the Write Enable instruction, and during Standard/Dual
SPI operations, the /WP pin.
7.1 STATUS REGISTERs
7.1.1 BUSY Status (BUSY) – Status Only
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is executing a
Page Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register or
Erase/Program Security Register instruction. During this time the device will ignore further instructions
except for the Read Status Register and Erase/Program Suspend instruction (see tW, tPP, tSE, tBE, and
tCE in AC Characteristics). When the program, erase or write status/security register instruction has
completed, the BUSY bit will be cleared to a 0 state indicating the device is ready for further instructions.
7.1.2 Write Enable Latch Status (WEL) – Status Only
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to 1 after executing a
Write Enable Instruction. The WEL status bit is cleared to 0 when the device is write disabled. A write
disable state occurs upon power-up or after any of the following instructions: Write Disable, Page
Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Erase
Security Register and Program Security Register.
7.1.3 Block Protect Bits (BP2, BP1, BP0) – Volatile/Non-Volatile Writable
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits in the status register (S4, S3, and
S2) that provide Write Protection control and status. Block Protect bits can be set using the Write Status
Register Instruction (see tW in AC characteristics). All, none or a portion of the memory array can be
protected from Program and Erase instructions (see Status Register Memory Protection table). The
factory default setting for the Block Protection Bits is 0, none of the array protected.
7.1.4 Top/Bottom Block Protect (TB) – Volatile/Non-Volatile Writable
The non-volatile Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the
Top (TB=0) or the Bottom (TB=1) of the array as shown in the Status Register Memory Protection table.
The factory default setting is TB=0. The TB bit can be set with the Write Status Register Instruction
depending on the state of the SRP and WEL bits.
7.1.5 Sector/Block Protect (SEC) – Volatile/Non-Volatile Writable
The non-volatile Sector/Block Protect bit (SEC) controls if the Block Protect Bits (BP2, BP1, BP0) protect
either 4KB Sectors (SEC=1) or 64KB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the array
as shown in the Status Register Memory Protection table. The default setting is SEC=0.
W25Q80EW
- 14 -
7.1.6 Complement Protect (CMP) – Volatile/Non-Volatile Writable
The Complement Protect bit (CMP) is a non-volatile read/write bit in the status register (S14). It is used in
conjunction with SEC, TB, BP2, BP1 and BP0 bits to provide more flexibility for the array protection. Once
CMP is set to 1, previous array protection set by SEC, TB, BP2, BP1 and BP0 will be reversed. For
instance, when CMP=0, a top 4KB sector can be protected while the rest of the array is not; when CMP=1,
the top 4KB sector will become unprotected while the rest of the array become read-only. Please refer to
the Status Register Memory Protection table for details. The default setting is CMP=0.
7.1.7 Status Register Protect (SRP, SRL) – Volatile/Non-Volatile Writable
The Status Register Protect bits (SRP) are non-volatile read/write bits in the status register (S7). The SRP
bits control the method of write protection: software protection,
SRP
/WP
Status
Protection
Description
0
X
Software
Protection
/WP pin has no control. The Status register can be
written to after a Write Enable instruction, WEL=1.
[Factory Default]
1
0
Hardware
Protected
When /WP pin is low the Status Register can not be
written to.
1
Hardware
Unprotected
When /WP pin is high the Status register can be
written to after a Write Enable instruction, WEL=1.
SRL
Status Register Lock
Description
0
Non-Lock
Status Register is unlocked
1
Lock-Down (1)
(temporary/Volatile)
Status Register is locked by standard status
register write command and can not be written to
again until the next power-down, power-up cycle.
One Time Program(2)
(Permanently/Non-Volatile)
Status Register is permanently locked by special
command flow* and can not be written to
1. When SRL =1 , a power-down, power-up cycle will change SRL =0 state.
2. Special One Time Protection feature is available upon special flow; please contact Winbond for details
W25Q80EW
Publication Release Date: August 18, 2018
- 15 - Preliminary -Revision J
7.1.8 Erase/Program Suspend Status (SUS) –Status Only
The Suspend Status bit is a read only bit in the status register (S15) that is set to 1 after executing a
Erase/Program Suspend (75h) instruction. The SUS status bit is cleared to 0 by Erase/Program Resume
(7Ah) instruction as well as a power-down, power-up cycle.
7.1.9 Security Register Lock Bits (LB[3:0]) – Volatile/Non-Volatile OTP Writable
The Security Register Lock Bits (LB3, LB2, LB1, LB0) are non-volatile One Time Program (OTP) bits in
Status Register (S13, S12, S11, S10) that provide the write protect control and status to the Security
Registers. The default state of LB[3:0] is 0, Security Registers are unlocked. LB3-0 can be set to 1
individually using the Write Status Register instruction. LB3-0 are One Time Programmable (OTP), once
it’s set to 1, the corresponding 256-Byte Security Register will become read-only permanently.
7.1.10 Quad Enable (QE) – Volatile/Non-Volatile Writable
The Quad Enable (QE) bit is a non-volatile read/write bit in the status register (S9) that allows Quad SPI
and QPI operation. When the QE bit is set to a 0 state (factory default), the /WP pin and /HOLD are
enabled. When the QE bit is set to a 1(factory default for Quad Enabled part numbers with ordering option
“IQ”), the Quad IO2 and IO3 pins are enabled, and /WP and /HOLD functions are disabled.
QE bit is required to be set to a 1 before issuing an “Enter QPI (38h)” to switch the device from
Standard/Dual/Quad SPI to QPI, otherwise the command will be ignored. When the device is in QPI mode,
QE bit will remain to be 1. A “Write Status Register” command in QPI mode cannot change QE bit from a
“1” to a “0”.
WARNING: If the /WP or /HOLD pins are tied directly to the power supply or ground during
standard SPI or Dual SPI operation, the QE bit should never be set to a 1.
SRP SEC TB BP2BP1BP0 WEL BUSY
TOP/BOTTOM PROTECT
WRITE ENABLE LATCH
S7 S6 S5 S4 S3 S2 S1 S0
STATUS REGISTER PROTECT
(Volatile/Non-Volatile Writable)
SECTOR PROTECT
BLOCK PROTECT BITS
ERASE/WRITE IN PROGRESS
(Volatile/Non-Volatile Writable)
(Status-Only)
(Status-Only)
(Volatile/Non-Volatile Writable)
(Volatile/Non-Volatile Writable)
Figure 3a. Status Register-1
W25Q80EW
- 16 -
S
15
S
14
S
13
S
12
S
11
S
10
S
9
S
8
SUS
CMP
LB
3
LB
2
LB
1
(
R
)
QE
SRL
Status Register Lock
(
Volatile
/
Non
-
Volatile Writable
)
Complement Protect
(
Volatile
/
Non
-
Volatile Writable
)
Security Register Lock Bits
(
Volatile
/
Non
-
Volatile OTP Writable
)
Reserved
Quad Enable
(
Volatile
/
Non
-
Volatile Writable
)
Suspend Status
(
Status
-
Only
)
Figure 3b. Status Register-2
7.1.11 Reserved Bits – Non Functional
There are a few reserved Status Register bits that may be read out as a “0” or “1”. It is recommended to
ignore the values of those bits. During a “Write Status Register” instruction, the Reserved Bits can be
written as “0”, but there will not be any effects.
W25Q80EW
Publication Release Date: August 18, 2018
- 17 - Preliminary -Revision J
7.1.12 Status Register Memory Protection (CMP = 0)
STATUS REGISTER(1)
W25Q80EW (8M-BIT) MEMORY PROTECTION(2)
SEC
TB
BP2
BP1
BP0
BLOCK(S)
ADDRESSES
DENSITY
PORTION
X
X
0
0
0
NONE
NONE
NONE
NONE
0
0
0
0
1
15
0F0000h – 0FFFFFh
64KB
Upper 1/16
0
0
0
1
0
14 and 15
0E0000h – 0FFFFFh
128KB
Upper 1/8
0
0
0
1
1
12 thru 15
0C0000h – 0FFFFFh
256KB
Upper 1/4
0
0
1
0
0
8 thru 15
080000h – 0FFFFFh
512KB
Upper 1/2
0
1
0
0
1
0
000000h – 00FFFFh
64KB
Lower 1/16
0
1
0
1
0
0 and 1
000000h – 01FFFFh
128KB
Lower 1/8
0
1
0
1
1
0 thru 3
000000h – 03FFFFh
256KB
Lower 1/4
0
1
1
0
0
0 thru 7
000000h – 07FFFFh
512KB
Lower 1/2
0
X
1
0
1
0 thru 15
000000h – 0FFFFFh
1MB
ALL
0
X
1
1
X
0 thru 15
000000h – 0FFFFFh
1MB
ALL
1
0
0
0
1
15
0FF000h – 0FFFFFh
4KB
Upper 1/256
1
0
0
1
0
15
0FE000h – 0FFFFFh
8KB
Upper 1/128
1
0
0
1
1
15
0FC000h – 0FFFFFh
16KB
Upper 1/64
1
0
1
0
X
15
0F8000h – 0FFFFFh
32KB
Upper 1/32
1
1
0
0
1
0
000000h – 000FFFh
4KB
Lower 1/256
1
1
0
1
0
0
000000h – 001FFFh
8KB
Lower 1/128
1
1
0
1
1
0
000000h – 003FFFh
16KB
Lower 1/64
1
1
1
0
X
0
000000h – 007FFFh
32KB
Lower 1/32
1
X
1
1
1
0 thru 15
000000h – 0FFFFFh
1MB
ALL
Notes:
1. X = don’t care
2. If any Erase or Program command specifies a memory region that contains protected data portion, this
command will be ignored.
W25Q80EW
- 18 -
7.1.13 Status Register Memory Protection (CMP = 1)
STATUS REGISTER(1)
W25Q80EW (8M-BIT) MEMORY PROTECTION(2)
SEC
TB
BP2
BP1
BP0
BLOCK(S)
ADDRESSES
DENSITY
PORTION
X
X
0
0
0
0 thru 15
000000h – 0FFFFFh
1MB
ALL
0
0
0
0
1
0 thru 14
000000h – 0EFFFFh
960KB
Lower 15/16
0
0
0
1
0
0 thru 13
000000h – 0DFFFFh
896KB
Lower 7/8
0
0
0
1
1
0 thru 11
000000h – 0BFFFFh
768KB
Lower 3/4
0
0
1
0
0
0 thru 7
000000h – 07FFFFh
512KB
Lower 1/2
0
1
0
0
1
1 thru 15
010000h – 0FFFFFh
960KB
Upper 15/16
0
1
0
1
0
2 thru 15
020000h – 0FFFFFh
896KB
Upper 7/8
0
1
0
1
1
4 thru 15
040000h – 0FFFFFh
768KB
Upper 3/4
0
1
1
0
0
8 thru 15
080000h – 0FFFFFh
512KB
Upper 1/2
0
X
1
0
1
NONE
NONE
NONE
NONE
0
X
1
1
X
NONE
NONE
NONE
NONE
1
0
0
0
1
0 thru 15
000000h – 0FEFFFh
1,020KB
Lower 255/256
1
0
0
1
0
0 thru 15
000000h – 0FDFFFh
1,016KB
Lower 127/128
1
0
0
1
1
0 thru 15
000000h – 0FBFFFh
1,008KB
Lower 63/64
1
0
1
0
X
0 thru 15
000000h – 0F7FFFh
992KB
Lower 31/32
1
1
0
0
1
0 thru 15
001000h – 0FFFFFh
1,020KB
Upper 255/256
1
1
0
1
0
0 thru 15
002000h – 0FFFFFh
1,016KB
Upper 127/128
1
1
0
1
1
0 thru 15
004000h – 0FFFFFh
1,008KB
Upper 63/64
1
1
1
0
X
0 thru 15
008000h – 0FFFFFh
992KB
Upper 31/32
1
X
1
1
1
NONE
NONE
NONE
NONE
Notes:
1. X = don’t care
2. If any Erase or Program command specifies a memory region that contains protected data portion, this
command will be ignored.
W25Q80EW
Publication Release Date: August 18, 2018
- 19 - Preliminary -Revision J
7.1.14 INSTRUCTIONS
The instruction set of the W25Q80EW consists of thirty four basic instructions that are fully controlled
through the SPI bus (see Instruction Set table1-3). Instructions are initiated with the falling edge of Chip
Select (/CS). The first byte of data clocked into the DI input provides the instruction code. Data on the DI
input is sampled on the rising edge of clock with most significant bit (MSB) first.
The QPI instruction set of the W25Q80EW consists of 32 basic instructions that are fully controlled
through the SPI bus (see Instruction Set Table 3). Instructions are initiated with the falling edge of Chip
Select (/CS). The first byte of data clocked through IO[3:0] pins provides the instruction code. Data on all
four IO pins are sampled on the rising edge of clock with most significant bit (MSB) first. All QPI
instructions, addresses, data and dummy bytes are using all four IO pins to transfer every byte of data with
every two serial clocks (CLK).
Instructions vary in length from a single byte to several bytes and may be followed by address bytes, data
bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed with the
rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in figures 4
through 36. All read instructions can be completed after any clocked bit. However, all instructions that
Write, Program or Erase must complete on a byte boundary (/CS driven high after a full 8-bits have been
clocked) otherwise the instruction will be ignored. This feature further protects the device from inadvertent
writes. Additionally, while the memory is being programmed or erased, or when the Status Register is
being written, all instructions except for Read Status Register will be ignored until the program or erase
cycle has completed.
7.1.15 Manufacturer and Device Identification
MANUFACTURER ID
(MF7-MF0)
Winbond Serial Flash
EFh
Device ID
(ID7-ID0)
(ID15-ID0)
Instruction
ABh, 90h, 92h, 94h
9Fh
W25Q80EW
13h
6014
W25Q80EW
- 20 -
7.1.16 Instruction Set Table 1 (Standard SPI Instructions)(1)
Data Input Output
Byte 1
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
Byte 7
Number of Clock(1-1-1)
8
8
8
8
8
8
8
Write Enable
06h
Volatile SR Write Enable
50h
Write Disable
04h
Release Power-down / ID
ABh
Dummy
Dummy
Dummy
(ID7-ID0)(2)
Manufacturer/Device ID
90h
Dummy
Dummy
00h
(MF7-MF0)
(ID7-ID0)
JEDEC ID
9Fh
(MF7-MF0)
(ID15-ID8)
(ID7-ID0)
Read Unique ID
4Bh
Dummy
Dummy
Dummy
Dummy
(UID63-0)
Read Data
03h
A23-A16
A15-A8
A7-A0
(D7-D0)
Fast Read
0Bh
A23-A16
A15-A8
A7-A0
Dummy
(D7-D0)
Page Program
02h
A23-A16
A15-A8
A7-A0
D7-D0
D7-D0(3)
Sector Erase (4KB)
20h
A23-A16
A15-A8
A7-A0
Block Erase (32KB)
52h
A23-A16
A15-A8
A7-A0
Block Erase (64KB)
D8h
A23-A16
A15-A8
A7-A0
Chip Erase
C7h/60h
Read Status Register-1
05h
(S7-S0)(2)
Write Status Register-1(4)
01h
(S7-S0)(4)
Read Status Register-2
35h
(S15-S8)(2)
Write Status Register-2
31h
(S15-S8)
Read SFDP Register
5Ah
A23-A16
A15-A8
A7-A0
Dummy
(D7-D0)
Erase Security Register(5)
44h
A23-A16
A15-A8
A7-A0
Program Security Register(5)
42h
A23-A16
A15-A8
A7-A0
D7-D0
D7-D0(5)
Read Security Register(5)
48h
A23-A16
A15-A8
A7-A0
Dummy
(D7-D0)
Erase / Program Suspend(6)
75h
Erase / Program Resume(6)
7Ah
Power-down
B9h
Enter QPI Mode
38h
Enable Reset
66h
Reset Device
99h
W25Q80EW
Publication Release Date: August 18, 2018
- 21 - Preliminary -Revision J
7.1.17 Instruction Set Table 2 (Dual/Quad SPI Instructions)
Data Input Output
Byte 1
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
Byte 7
Byte 8
Byte 9
Number of Clock(1-1-2)
8
8
8
8
4
4
4
4
4
Fast Read Dual Output
3Bh
A23-A16
A15-A8
A7-A0
Dummy
Dummy
(D7-D0)(7)
Number of Clock(1-2-2)
8
4
4
4
4
4
4
4
4
Fast Read Dual I/O
BBh
A23-A16(6)
A15-A8(6)
A7-A0(6)
Dummy(14)
(D7-D0)(7)
Mftr./Device ID Dual I/O
92h
A23-A16(6)
A15-A8(6)
00(6)
Dummy(14)
(MF7-MF0)
(ID7-ID0)(7)
Number of Clock(1-1-4)
8
8
8
8
2
2
2
2
2
Quad Input Page Program
32h
A23-A16
A15-A8
A7-A0
(D7-D0)(9)
(D7-D0)(3)
…
Fast Read Quad Output
6Bh
A23-A16
A15-A8
A7-A0
Dummy
Dummy
Dummy
Dummy
(D7-D0)(10)
Number of Clock(1-4-4)
8
2(8)
2(8)
2(8)
2
2
2
2
2
Mftr./Device ID Quad I/O
94h
A23-A16
A15-A8
00
Dummy(14)
Dummy
Dummy
(MF7-MF0)
(ID7-ID0)
Fast Read Quad I/O
EBh
A23-A16
A15-A8
A7-A0
Dummy(14)
Dummy
Dummy
(D7-D0)
Set Burst with Wrap
77h
Dummy
Dummy
Dummy
W8-W0
W25Q80EW
- 22 -
7.1.18 Instruction Set Table 3 (QPI Instructions) (1)
Data Input Output
Byte 1
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
Byte 7
Number of Clock (4-4-4)
2
2
2
2
2
2
2
Write Enable
06h
Volatile SR Write Enable
50h
Write Disable
04h
Release Power-down / ID
ABh
Dummy
Dummy
Dummy
(ID7-ID0)(2)
Manufacturer/Device ID
90h
Dummy
Dummy
00h
(MF7-MF0)
(ID7-ID0)
JEDEC ID
9Fh
(MF7-MF0)
(ID15-ID8)
(ID7-ID0)
Set Read Parameters
C0h
P7-P0
Fast Read
0Bh
A23-A16
A15-A8
A7-A0
Dummy(12)
(D7-D0)
…
Burst Read with Wrap(5,6)
0Ch
A23-A16
A15-A8
A7-A0
Dummy(12)
(D7-D0)
…
Fast Read Quad I/O
EBh
A23-A16
A15-A8
A7-A0
M7-M0(12)
(D7-D0)
…
Page Program
02h
A23-A16
A15-A8
A7-A0
D7-D0(9)
D7-D0(3)
…
Sector Erase (4KB)
20h
A23-A16
A15-A8
A7-A0
Block Erase (32KB)
52h
A23-A16
A15-A8
A7-A0
Block Erase (64KB)
D8h
A23-A16
A15-A8
A7-A0
Chip Erase
C7h/60h
Read Status Register-1
05h
(S7-S0)(2)
Write Status Register-1(4)
01h
(S7-S0)(4)
Read Status Register-2
35h
(S15-S8)(2)
Write Status Register-2
31h
(S15-S8)
Erase / Program Suspend
75h
Erase / Program Resume
7Ah
Power-down
B9h
Enable Reset
66h
Reset Device
99h
Exit QPI Mode
FFh
W25Q80EW
Publication Release Date: August 18, 2018
- 23 - Preliminary -Revision J
Note:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “D7-D0” indicate
data output from the device on either 1, 2 or 4 IO pins. . “D7-D0” indicates single I/O pin; “D7-D0 /2”
indicates 2 I/O pins; “D7-D0 /4” indicates 4 I/O pins.
2. The Status Register contents and Device ID will repeat continuously until /CS terminates the instruction.
3. At least one byte of data input is required for Page Program, Quad Page Program and Program Security
Registers, up to 256 bytes of data input. If more than 256 bytes of data are sent to the device, the
addressing will wrap to the beginning of the page and overwrite previously sent data.
4. Write Status Register-1 (01h) can also be used to program Status Register-1&2, see section 8.2.5.
5. Security Register Address:
Security Register 1: A23-16 = 00h; A15-8 = 10h; A7-0 = byte address
Security Register 2: A23-16 = 00h; A15-8 = 20h; A7-0 = byte address
Security Register 3: A23-16 = 00h; A15-8 = 30h; A7-0 = byte address
6. Dual SPI address input format:
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
7. Dual SPI data input/output format:
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
8. Quad SPI address input format: Set Burst with Wrap input format:
IO0 = A20, A16, A12, A8, A4, A0, M4, M0 IO0 = x, x, x, x, x, x, W4, x
IO1 = A21, A17, A13, A9, A5, A1, M5, M1 IO1 = x, x, x, x, x, x, W5, x
IO2 = A22, A18, A14, A10, A6, A2, M6, M2 IO2 = x, x, x, x, x, x, W6, x
IO3 = A23, A19, A15, A11, A7, A3, M7, M3 IO3 = x, x, x, x, x, x, x, x
9. Quad SPI data input/output format:
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3, …..)
10. Fast Read Quad I/O data output format:
IO0 = (x, x, x, x, D4, D0, D4, D0)
IO1 = (x, x, x, x, D5, D1, D5, D1)
IO2 = (x, x, x, x, D6, D2, D6, D2)
IO3 = (x, x, x, x, D7, D3, D7, D3)
11. QPI Command, Address, Data input/output format:
CLK # 0 1 2 3 4 5 6 7 8 9 10 11
IO0 = C4, C0, A20, A16, A12, A8, A4, A0, D4, D0, D4, D0
IO1 = C5, C1, A21, A17, A13, A9, A5, A1, D5, D1, D5, D1
IO2 = C6, C2, A22, A18, A14, A10, A6, A2, D6, D2, D6, D2
IO3 = C7, C3, A23, A19, A15, A11, A7, A3, D7, D3, D7, D3
12. The number of dummy clocks for QPI Fast Read, QPI Fast Read Quad I/O & QPI Burst Read with Wrap is
controlled by read parameter P7 – P4.
13. The wrap around length for QPI Burst Read with Wrap is controlled by read parameter P3 – P0.
14. The first dummy is M7-M0 should be set to Fxh
W25Q80EW
- 24 -
7.2 Instruction Descriptions
7.2.1 Write Enable (06h)
The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to a
1. The WEL bit must be set prior to every Page Program, Quad Page Program, Sector Erase, Block
Erase, Chip Erase, Write Status Register and Erase/Program Security Registers instruction. The Write
Enable instruction is entered by driving /CS low, shifting the instruction code “06h” into the Data Input (DI)
pin on the rising edge of CLK, and then driving /CS high.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Mode 0
Mode 3
Instruction (06h)
High Impedance
/CS
CLK Mode 0
Mode 3 0 1
Mode 0
Mode 3
IO0
IO1
IO2
IO3
06h
Instruction
Figure 5. Write Enable Instruction for SPI Mode (left) or QPI Mode (right)
7.2.2 Write Enable for Volatile Status Register (50h)
The non-volatile Status Register bits described in section 8.1 can also be written to as volatile bits. This
gives more flexibility to change the system configuration and memory protection schemes quickly without
waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-
volatile bits. To write the volatile values into the Status Register bits, the Write Enable for Volatile Status
Register (50h) instruction must be issued prior to a Write Status Register (01h) instruction. Write Enable
for Volatile Status Register instruction (Figure 5) will not set the Write Enable Latch (WEL) bit, it is only
valid for the Write Status Register instruction to change the volatile Status Register bit values.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Mode 0
Mode 3
Instruction (50h)
High Impedance
/CS
CLK Mode 0
Mode 3 0 1
Mode 0
Mode 3
IO0
IO1
IO2
IO3
50h
Instruction
Figure 6. Write Enable for Volatile Status Register Instruction for SPI Mode (left) or QPI Mode (right)
W25Q80EW
Publication Release Date: August 18, 2018
- 25 - Preliminary -Revision J
7.2.3 Write Disable (04h)
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register to
a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h” into the
DI pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up and upon
completion of the Write Status Register, Erase/Program Security Registers, Page Program, Quad Page
Program, Sector Erase, Block Erase and Chip Erase instructions.
Write Disable instruction can also be used to invalidate the Write Enable for Volatile Status Register
instruction.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Mode 0
Mode 3
Instruction (04h)
High Impedance
/CS
CLK Mode 0
Mode 3 0 1
Mode 0
Mode 3
IO0
IO1
IO2
IO3
04h
Instruction
Figure 7. Write Disable Instruction for SPI Mode (left) or QPI Mode (right)
W25Q80EW
- 26 -
7.2.4 Read Status Register-1(05h) and Read Status Register-2(35h)
The Read Status Register instructions allow the 8-bit Status Registers to be read. The instruction is
entered by driving /CS low and shifting the instruction code “05h” for Status Register-1 or “35h” for
Status Register-2 into the DI pin on the rising edge of CLK. The status register bits are then shifted out on
the DO pin at the falling edge of CLK with most significant bit (MSB) first as shown in figure 7. The Status
Register bits are shown in figure 3a and 3b and include the BUSY, WEL, BP2-BP0, TB, SEC, SRP, SRL,
QE, LB[3:0], CMP and SUS bits (see Status Register section earlier in this datasheet).
The Read Status Register instruction may be used at any time, even while a Program, Erase or Write
Status Register cycle is in progress. This allows the BUSY status bit to be checked to determine when the
cycle is complete and if the device can accept another instruction. The Status Register can be read
continuously, as shown in Figure 7. The instruction is completed by driving /CS high.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (05h/35h/15h)
High Impedance
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
76543210765432107
Status Register-1/2/3 out Status Register-1/2/3 out
* *
= MSB
*
Figure 7. Read Status Register Instruction Sequence Diagram
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
05h/35h/15h
2345
4040
5 1
6 2
7 3
5 1
6 2
7 3
4
5
6
7
SR-1/2/3
out SR-1/2/3
out
Instruction
Figure 8b. Read Status Register Instruction (QPI Mode)
W25Q80EW
Publication Release Date: August 18, 2018
- 27 - Preliminary -Revision J
7.2.5 Write Status Register-1 (01h), Status Register-2 (31h)
The Write Status Register instruction allows the Status Registers to be written. The writable Status
Register bits include: SRP, SEC, TB, BP[2:0] in Status Register-1; CMP, LB[3:0], QE, SRL in Status
Register-2. All other Status Register bit locations are read-only and will not be affected by the Write Status
Register instruction. LB[3:0] are non-volatile OTP bits, once it is set to 1, it cannot be cleared to 0.
To write non-volatile Status Register bits, a standard Write Enable (06h) instruction must previously have
been executed for the device to accept the Write Status Register instruction (Status Register bit WEL
must equal 1). Once write enabled, the instruction is entered by driving /CS low, sending the instruction
code “01h/31h/11h”, and then writing the status register data byte as illustrated in Figure 9a & 9b.
To write volatile Status Register bits, a Write Enable for Volatile Status Register (50h) instruction must
have been executed prior to the Write Status Register instruction (Status Register bit WEL remains 0).
However, SRL and LB[3:0] cannot be changed from “1” to “0” because of the OTP protection for these
bits. Upon power off or the execution of a Software/Hardware Reset, the volatile Status Register bit values
will be lost, and the non-volatile Status Register bit values will be restored.
During non-volatile Status Register write operation (06h combined with 01h/31h/11h), after /CS is driven
high, the self-timed Write Status Register cycle will commence for a time duration of tW (See AC
Characteristics). While the Write Status Register cycle is in progress, the Read Status Register instruction
may still be accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status
Register cycle and a 0 when the cycle is finished and ready to accept other instructions again. After the
Write Status Register cycle has finished, the Write Enable Latch (WEL) bit in the Status Register will be
cleared to 0.
During volatile Status Register write operation (50h combined with 01h/31h/11h), after /CS is driven high,
the Status Register bits will be refreshed to the new values within the time period of tSHSL2 (See AC
Characteristics). BUSY bit will remain 0 during the Status Register bit refresh period.
The Write Status Register instruction can be used in both SPI mode and QPI mode. However, the QE bit
cannot be written to when the device is in the QPI mode, because QE=1 is required for the device to enter
and operate in the QPI mode
Refer to section 7.1 for Status Register descriptions.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction
(01h/31h/11h)
High Impedance
8 9 10 11 12 13 14 15
76543210
Register-1/2/3 in
Mode 0
Mode 3
*
= MSB
*
Figure 9a. Write Status Register-1/2 Instruction (SPI Mode)
W25Q80EW
- 28 -
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
01/31/11h
2 3
4 0
5 1
6 2
7 3
SR1/2/3
in
Mode 0
Mode 3
Instruction
Figure 9b. Write Status Register-1/2 Instruction (QPI Mode)
The W25Q80EW is also backward compatible to Winbond’s previous generations of serial flash
memories, in which the Status Register-1&2 can be written using a single “Write Status Register-1 (01h)”
command. To complete the Write Status Register-1&2 instruction, the /CS pin must be driven high after
the sixteenth bit of data that is clocked in as shown in Figure 9c. If /CS is driven high after the eighth clock,
the Write Status Register-1 (01h) instruction will only program the Status Register-1, the Status Register-2
will not be affected (Previous generations will clear CMP and QE bits).
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (01h)
High Impedance
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
7654321015 14 13 12 11 10 9 8
Status Register 1 in Status Register 2 in
Mode 0
Mode 3
* *
= MSB
*
Figure 9c. Write Status Register-1/2 Instruction (SPI Mode)
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
01h
2 3 4 5
4 0 12 8
5 1
6 2
7 3
13 9
14 10
15 11
SR1 in SR2 in
Mode 0
Mode 3
Instruction
Figure 9d. Write Status Register-1/2 Instruction (QPI Mode)
W25Q80EW
Publication Release Date: August 18, 2018
- 29 - Preliminary -Revision J
7.2.6 Read Data (03h)
The Read Data instruction allows one or more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed by a
24-bit address (A23-A0) into the DI pin. The code and address bits are latched on the rising edge of the
CLK pin. After the address is received, the data byte of the addressed memory location will be shifted out
on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is automatically
incremented to the next higher address after each byte of data is shifted out allowing for a continuous
stream of data. This means that the entire memory can be accessed with a single instruction as long as
the clock continues. The instruction is completed by driving /CS high.
The Read Data instruction sequence is shown in figure 10. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of fR
(see AC Electrical Characteristics).
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (03h)
High Impedance
8 9 10 28 29 30 31 32 33 34 35 36 37 38 39
765432107
24-Bit Address
23 22 21 3 2 1 0
Data Out 1
*
*
= MSB
*
Figure 10. Read Data Instruction Sequence Diagram
W25Q80EW
- 30 -
7.2.7 Fast Read (0Bh)
The Fast Read instruction is similar to the Read Data instruction except that it can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 11. The dummy clocks allow the devices
internal circuits additional time for setting up the initial address. During the dummy clocks the data value
on the DO pin is a “don’t care”.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (0Bh)
High Impedance
8 9 10 28 29 30 31
24-Bit Address
23 22 21 3 2 1 0
Data Out 1
*
/CS
CLK
DI
(IO0)
DO
(IO1)
32 33 34 35 36 37 38 39
Dummy Clocks
High Impedance
40 41 42 44 45 46 47 48 49 50 51 52 53 54 55
765432107
Data Out 2
*
76543210
*
4331
0
= MSB
*
Figure 11. Fast Read Instruction Sequence Diagram(SPI Mode)
W25Q80EW
Publication Release Date: August 18, 2018
- 31 - Preliminary -Revision J
Fast Read (0Bh) in QPI Mode
The Fast Read instruction is also supported in QPI mode. When QPI mode is enabled, the number of
dummy clocks is configured by the “Set Read Parameters (C0h)” instruction to accommodate a wide
range of applications with different needs for either maximum Fast Read frequency or minimum data
access latency. Depending on the Read Parameter Bits P[5:4] setting, the number of dummy clocks can
be configured as either 2, 4, 6 or 8. The default number of dummy clocks upon power up or after a Reset
instruction is 2.
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
0Bh
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7 8 9
4 0
5 1
6 2
7 3
A15-8 A7-0 Dummy*
Byte 1 Byte 2
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
10 11 12 13
4
5
6
7
IOs switch from
Input to Output
* "Set Read Parameters" instruction (C0h) can set
the number of dummy clocks.
Instruction
Figure 16b. Fast Read Instruction (QPI Mode)
W25Q80EW
- 32 -
7.2.8 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction except
that data is output on two pins; IO0 and IO1. This allows data to be transferred from the W25Q80EW at
twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal for quickly
downloading code from Flash to RAM upon power-up or for applications that cache code-segments to
RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 12. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy clocks is
“don’t care”. However, the IO0 pin should be high-impedance prior to the falling edge of the first data out
clock.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (3Bh)
High Impedance
8 9 10 28 29 30
32 33 34 35 36 37 38 39
6420
24-Bit Address
23 22 21 3 2 1 0
*
*
31
31
/CS
CLK
DI
(IO0)
DO
(IO1)
Dummy Clocks
0
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
7531
High Impedance
6 4 2 0
7 5 3 1
6420
7531
6420
7531
IO0 switches from
Input to Output
6
7
Data Out 1 *Data Out 2 *Data Out 3 *Data Out 4
= MSB
*
Figure 12. Fast Read Dual Output Instruction Sequence Diagram
W25Q80EW
Publication Release Date: August 18, 2018
- 33 - Preliminary -Revision J
7.2.9 Fast Read Quad Output (6Bh)
The Fast Read Quad Output (6Bh) instruction is similar to the Fast Read Dual Output (3Bh) instruction
except that data is output on four pins, IO0, IO1, IO2, and IO3. A Quad enable of Status Register-2 must be
executed before the device will accept the Fast Read Quad Output Instruction (Status Register bit QE
must equal 1). The Fast Read Quad Output Instruction allows data to be transferred from the W25Q80EW
at four times the rate of standard SPI devices.
The Fast Read Quad Output instruction can operate at the highest possible frequency of FR (see AC
Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address
as shown in figure 13. The dummy clocks allow the device's internal circuits additional time for setting up
the initial address. The input data during the dummy clocks is “don’t care”. However, the IO pins should be
high-impedance prior to the falling edge of the first data out clock.
/CS
CLK Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (6Bh)
High Impedance
8 9 10 28 29 30
32 33 34 35 36 37 38 39
4 0
24-Bit Address
23 22 21 3 2 1 0
*
31
31
/CS
CLK
Dummy Clocks
0
40 41 42 43 44 45 46 47
5 1
High Impedance
4
5
Byte 1
High Impedance
High Impedance
6 2
7 3
High Impedance
6
7
High Impedance
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
Byte 2 Byte 3 Byte 4
IO0 switches from
Input to Output
IO0
IO1
IO2
IO3
IO0
IO1
IO2
IO3
= MSB
*
Figure 13. Fast Read Quad Output Instruction Sequence Diagram
W25Q80EW
- 34 -
7.2.10 Fast Read Dual I/O (BBh)
The Fast Read Dual I/O (BBh) instruction allows for improved random access while maintaining two IO
pins, IO0 and IO1. It is similar to the Fast Read Dual Output (3Bh) instruction but with the capability to input
the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for code
execution (XIP) directly from the Dual SPI in some applications.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (BBh)
8 9 10 12 13 14
24 25 26 27 28 29 30 31
6 4 2 0
*
*
23
/CS
CLK
DI
(IO0)
DO
(IO1)
0
32 33 34 35 36 37 38 39
7 5 3 1 *
6420
7531
6420
7531
6 4 2 0
7 5 3 1
* *
IOs switch from
Input to Output
6
7
22 20 18 16
23 21 19 17
14 12 10 8
15 13 11 9
6420
7531
6 4 2 0
7 5 3 1
11 15 16 17 18 20 21 2219 23
1
A23-16 A15-8 A7-0 M7-0
Byte 1 Byte 2 Byte 3 Byte 4
= MSB
**
Figure 14a. Fast Read Dual I/O Instruction Sequence (Initial instruction or previous M5-4 10)
W25Q80EW
Publication Release Date: August 18, 2018
- 35 - Preliminary -Revision J
7.2.11 Fast Read Quad I/O (EBh)
The Fast Read Quad I/O (EBh) instruction is similar to the Fast Read Dual I/O (BBh) instruction except
that address and data bits are input and output through four pins IO0, IO1, IO2 and IO3 and four Dummy
clock are required prior to the data output. The Quad I/O dramatically reduces instruction overhead
allowing faster random access for code execution (XIP) directly from the Quad SPI. The Quad Enable bit
(QE) of Status Register-2 must be set to enable the Fast Read Quad I/O Instruction.
Figure 15a. Fast Read Quad I/O Instruction Sequence (Initial instruction or previous M5-4 10)
Fast Read Quad I/O with “8/16/32/64-Byte Wrap Around”
The Fast Read Quad I/O instruction can also be used to access a specific portion within a page by issuing
a “Set Burst with Wrap” command prior to EBh. The “Set Burst with Wrap” command can either enable or
disable the “Wrap Around” feature for the following EBh commands. When “Wrap Around” is enabled, the
data being accessed can be limited to either a 8, 16, 32 or 64-byte section of a 256-byte page. The output
data starts at the initial address specified in the instruction, once it reaches the ending boundary of the
8/16/32/64-byte section, the output will wrap around to the beginning boundary automatically until /CS is
pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then
fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read
commands.
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to
enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap
around section within a page. See 7.2.18 for detail descriptions.
M7-0
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7 8 9
4 0
5 1
6 2
7 3
A15-8 A7-0
Byte 1 Byte 2
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
10 11 12 13 14
4
5
6
7
IOs switch from
Input to Output
Byte 3
15 16 17 18 19 20 21 22 23
Dummy Dummy
Instruction (EBh)
W25Q80EW
- 36 -
Fast Read Quad I/O (EBh) in QPI Mode
The Fast Read Quad I/O instruction is also supported in QPI mode, as shown in Figure 19c. When QPI
mode is enabled, the number of dummy clocks is configured by the “Set Read Parameters (C0h)”
instruction to accommodate a wide range of applications with different needs for either maximum Fast
Read frequency or minimum data access latency. Depending on the Read Parameter Bits P[5:4] setting,
the number of dummy clocks can be configured as either 2, 4, 6 or 8. The default number of dummy
clocks upon power up or after a Reset instruction is 2.
“Wrap Around” feature is not available in QPI mode for Fast Read Quad I/O instruction. To perform a read
operation with fixed data length wrap around in QPI mode, a dedicated “Burst Read with Wrap” (0Ch)
instruction must be used. Please refer to 8.2.45 for details.
Figure 24c. Fast Read Quad I/O Instruction (Initial instruction or previous M5-410, QPI Mode)
M7-0*
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
EBh
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7 8 9
4 0
5 1
6 2
7 3
A15-8 A7-0
Byte 1 Byte 2
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
10 11 12 13 14
4
5
6
7
IOs switch from
Input to Output
* "Set Read Parameters" instruction (C0h) can
set the number of dummy clocks.
Byte 3
Instruction
W25Q80EW
Publication Release Date: August 18, 2018
- 37 - Preliminary -Revision J
7.2.12 Set Burst with Wrap (77h)
The Set Burst with Wrap (77h) instruction is used in conjunction with “Fast Read Quad I/O” and “Word
Read Quad I/O” instructions to access a fixed length of 8/16/32/64-byte section within a 256-byte page.
Certain applications can benefit from this feature and improve the overall system code execution
performance.
Similar to a Quad I/O instruction, the Set Burst with Wrap instruction is initiated by driving the /CS pin low
and then shifting the instruction code “77h” followed by 24 dummy bits and 8 “Wrap Bits”, W7-0. The
instruction sequence is shown in figure 17. Wrap bit W7 and the lower nibble W3-0 are not used.
W6, W5
W4 = 0
W4 =1 (DEFAULT)
Wrap Around
Wrap Length
Wrap Around
Wrap Length
0 0
Yes
8-byte
No
N/A
0 1
Yes
16-byte
No
N/A
1 0
Yes
32-byte
No
N/A
1 1
Yes
64-byte
No
N/A
Once W6-4 is set by a Set Burst with Wrap instruction, all the following “Fast Read Quad I/O” and “Word
Read Quad I/O” instructions will use the W6-4 setting to access the 8/16/32/64-byte section within any
page. To exit the “Wrap Around” function and return to normal read operation, another Set Burst with
Wrap instruction should be issued to set W4 = 1. The default value of W4 upon power on is 1. In the case
of a system Reset while W4 = 0, it is recommended that the controller issues a Set Burst with Wrap
instruction to reset W4 = 1 prior to any normal Read instructions since W25Q80EW does not have a
hardware Reset Pin.
In QPI mode, the “Burst Read with Wrap (0Ch)” instruction should be used to perform the Read operation
with “Wrap Around” feature. The Wrap Length set by W5-4 in Standard SPI mode is still valid in QPI mode
and can also be re-configured by “Set Read Parameters (C0h)” instruction. Refer to 8.2.44 and 8.2.45 for
details.
Wrap Bit
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
2 3 4 5
X X
X X
X X
X X
don't
care
6 7 8 9
don't
care don't
care
10 11 12 13 14 15
Instruction (77h)
Mode 0
Mode 3
X X
X X
X X
X X
X X
X X
X X
X X
w4 X
w5 X
w6 X
X X
Figure 17. Set Burst with Wrap Instruction Sequence
W25Q80EW
- 38 -
7.2.13 Page Program (02h)
The Page Program instruction allows from one byte to 256 bytes (a page) of data to be programmed at
previously erased (FFh) memory locations. A Write Enable instruction must be executed before the device
will accept the Page Program Instruction (Status Register bit WEL= 1). The instruction is initiated by
driving the /CS pin low then shifting the instruction code “02h” followed by a 24-bit address (A23-A0) and
at least one data byte, into the DI pin. The /CS pin must be held low for the entire length of the instruction
while data is being sent to the device. The Page Program instruction sequence is shown in figure 19.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits)
should be set to 0. If the last address byte is not zero, and the number of clocks exceed the remaining
page length, the addressing will wrap to the beginning of the page. In some cases, less than 256 bytes (a
partial page) can be programmed without having any effect on other bytes within the same page. One
condition to perform a partial page program is that the number of clocks can not exceed the remaining
page length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the
page and overwrite previously sent data.
As with the write and erase instructions, the /CS pin must be driven high after the eighth bit of the last byte
has been latched. If this is not done the Page Program instruction will not be executed. After /CS is driven
high, the self-timed Page Program instruction will commence for a time duration of tpp (See AC
Characteristics). While the Page Program cycle is in progress, the Read Status Register instruction may
still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Page Program
cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions
again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register
is cleared to 0. The Page Program instruction will not be executed if the addressed page is protected by
the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits.
/CS
CLK
DI
(IO0)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (02h)
8 9 10 28 29 30 39
24-Bit Address
23 22 21 3 2 1
*
/CS
CLK
DI
(IO0)
40 41 42 43 44 45 46 47
Data Byte 2
48 49 50 52 53 54 55
2072
7 6 5 4 3 2 1 0
5139
0
31
0
32 33 34 35 36 37 38
Data Byte 1
7654321
*
Mode 0
Mode 3
Data Byte 3
2073
2074
2075
2076
2077
2078
2079
0
Data Byte 256
*76543210
*76543210
*
= MSB
*
Figure 19. Page Program Instruction Sequence Diagram
W25Q80EW
Publication Release Date: August 18, 2018
- 39 - Preliminary -Revision J
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
02h
Instruction
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7 8 9
4 0
5 1
6 2
7 3
A15-8 A7-0 Byte1 Byte 2 Byte 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
10 11 12 13
Byte 255 Byte 256
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
Mode 0
Mode 3
516
517
518
519
Figure 29b. Page Program Instruction (QPI Mode)
W25Q80EW
- 40 -
7.2.14 Quad Input Page Program (32h)
The Quad Page Program instruction allows up to 256 bytes of data to be programmed at previously
erased (FFh) memory locations using four pins: IO0, IO1, IO2, and IO3. The Quad Page Program can
improve performance for PROM Programmer and applications that have slow clock speeds <5MHz.
Systems with faster clock speed will not realize much benefit for the Quad Page Program instruction since
the inherent page program time is much greater than the time it take to clock-in the data.
To use Quad Page Program the Quad Enable in Status Register-2 must be set (QE=1). A Write Enable
instruction must be executed before the device will accept the Quad Page Program instruction (Status
Register-1, WEL=1). The instruction is initiated by driving the /CS pin low then shifting the instruction code
“32h” followed by a 24-bit address (A23-A0) and at least one data byte, into the IO pins. The /CS pin must
be held low for the entire length of the instruction while data is being sent to the device. All other functions
of Quad Page Program are identical to standard Page Program. The Quad Page Program instruction
sequence is shown in figure 20.
/CS
CLK Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (32h)
8 9 10 28 29 30
32 33 34 35 36 37
4 0
24-Bit Address
23 22 21 3 2 1 0
*
31
31
/CS
CLK
5 1
Byte 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
Byte 2 Byte 3 Byte
256
0 4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
536
537
538
539
540
541
542
543
Mode 0
Mode 3
Byte
253 Byte
254 Byte
255
IO0
IO1
IO2
IO3
IO0
IO1
IO2
IO3
* * * * * * *
= MSB
*
Figure 20. Quad Input Page Program Instruction Sequence Diagram
W25Q80EW
Publication Release Date: August 18, 2018
- 41 - Preliminary -Revision J
7.2.15 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0). The Sector Erase
instruction sequence is shown in Figure 31a & 31b.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits or the Individual Block/Sector Locks.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (20h)
High Impedance
8 9 29 30 31
24-Bit Address
23 22 210
*
Mode 0
Mode 3
= MSB
*
Figure 31a. Sector Erase Instruction (SPI Mode)
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
20h
Instruction
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7
4 0
5 1
6 2
7 3
A15-8 A7-0
Mode 0
Mode 3
Figure 31b. Sector Erase Instruction (QPI Mode)
W25Q80EW
- 42 -
7.2.16 32KB Block Erase (52h)
The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “52h” followed a 24-bit block address (A23-A0). The Block Erase
instruction sequence is shown in Figure 32a & 32b.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction
will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY
bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. After the Block Erase cycle has finished the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0)
bits or the Individual Block/Sector Locks.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (52h)
High Impedance
8 9 29 30 31
24-Bit Address
23 22 210
*
Mode 0
Mode 3
= MSB
*
Figure 32a. 32KB Block Erase Instruction (SPI Mode)
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
52h
Instruction
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7
4 0
5 1
6 2
7 3
A15-8 A7-0
Mode 0
Mode 3
Figure 32b. 32KB Block Erase Instruction (QPI Mode)
W25Q80EW
Publication Release Date: August 18, 2018
- 43 - Preliminary -Revision J
7.2.17 64KB Block Erase (D8h)
The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0). The Block Erase
instruction sequence is shown in Figure 33a & 33b.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction
will commence for a time duration of tBE (See AC Characteristics). While the Block Erase cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY
bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. After the Block Erase cycle has finished the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0)
bits or the Individual Block/Sector Locks.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (D8h)
High Impedance
8 9 29 30 31
24-Bit Address
23 22 210
*
Mode 0
Mode 3
= MSB
*
Figure 33a. 64KB Block Erase Instruction (SPI Mode)
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
D8h
Instruction
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7
4 0
5 1
6 2
7 3
A15-8 A7-0
Mode 0
Mode 3
Figure 33b. 64KB Block Erase Instruction (QPI Mode)
W25Q80EW
- 44 -
7.2.18 Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in Figure 34.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in progress,
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The BUSY
bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to accept
other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the
Status Register is cleared to 0. The Chip Erase instruction will not be executed if any memory region is
protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits or the Individual Block/Sector
Locks.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (C7h/60h)
High Impedance
Mode 0
Mode 3
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
C7h/60h
Instruction Mode 0
Mode 3
Figure 34. Chip Erase Instruction for SPI Mode (left) or QPI Mode (right)
W25Q80EW
Publication Release Date: August 18, 2018
- 45 - Preliminary -Revision J
7.2.19 Erase / Program Suspend (75h)
The Erase/Program Suspend instruction “75h”, allows the system to interrupt a Sector or Block Erase
operation or a Page Program operation and then read from or program/erase data to, any other sectors or
blocks. The Erase/Program Suspend instruction sequence is shown in Figure 35a & 35b.
The Write Status Register instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h, 44h) are not
allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If
written during the Chip Erase operation, the Erase Suspend instruction is ignored. The Write Status
Register instruction (01h) and Program instructions (02h, 32h, 42h) are not allowed during Program
Suspend. Program Suspend is valid only during the Page Program or Quad Page Program operation.
The Erase/Program Suspend instruction “75h” will be accepted by the device only if the SUS bit in the
Status Register equals to 0 and the BUSY bit equals to 1 while a Sector or Block Erase or a Page
Program operation is on-going. If the SUS bit equals to 1 or the BUSY bit equals to 0, the Suspend
instruction will be ignored by the device. A maximum of time of “tSUS” (See AC Characteristics) is required
to suspend the erase or program operation. The BUSY bit in the Status Register will be cleared from 1 to
0 within “tSUS” and the SUS bit in the Status Register will be set from 0 to 1 immediately after
Erase/Program Suspend. For a previously resumed Erase/Program operation, it is also required that the
Suspend instruction “75h” is not issued earlier than a minimum of time of “tSUS” following the preceding
Resume instruction “7Ah”.
Unexpected power off during the Erase/Program suspend state will reset the device and release the
suspend state. SUS bit in the Status Register will also reset to 0. The data within the page, sector or block
that was being suspended may become corrupted. It is recommended for the user to implement system
design techniques against the accidental power interruption and preserve data integrity during
erase/program suspend state.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (75h)
High Impedance
Mode 0
Mode 3
tSUS
Accept instructions
Figure 35a. Erase/Program Suspend Instruction (SPI Mode)
W25Q80EW
- 46 -
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
75h
Instruction Mode 0
Mode 3
tSUS
Accept instructions
Figure 35b. Erase/Program Suspend Instruction (QPI Mode)
W25Q80EW
Publication Release Date: August 18, 2018
- 47 - Preliminary -Revision J
7.2.20 Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction “7Ah”
will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY bit
equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set from
0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will complete the
program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume instruction “7Ah”
will be ignored by the device. The Erase/Program Resume instruction sequence is shown in Figure 36a &
36b.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “tSUS” following a previous Resume instruction.
/CS
CLK
DI
(IO0)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (7Ah)
Mode 0
Mode 3
Resume previously
suspended Program or
Erase
Figure 36a. Erase/Program Resume Instruction (SPI Mode)
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
7Ah
Instruction Mode 0
Mode 3
Resume previously
suspended Program or
Erase
Figure 36b. Erase/Program Resume Instruction (QPI Mode)
W25Q80EW
- 48 -
7.2.21 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
Figure 37a & 37b.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release Power-down /
Device ID (ABh) instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition
for securing maximum write protection. The device always powers-up in the normal operation with the
standby current of ICC1.
/CS
CLK
DI
(IO0)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (B9h)
Mode 0
Mode 3
tDP
Power-down currentStand-by current
Figure 37a. Deep Power-down Instruction (SPI Mode)
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
B9h
Instruction Mode 0
Mode 3
tDP
Power-down currentStand-by current
Figure 37b. Deep Power-down Instruction (QPI Mode)
W25Q80EW
Publication Release Date: August 18, 2018
- 49 - Preliminary -Revision J
7.2.22 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, or obtain the devices electronic identification (ID) number.
To release the device from the power-down state, the instruction is issued by driving the /CS pin low,
shifting the instruction code “ABh” and driving /CS high as shown in Figure 38a & 38b. Release from
power-down will take the time duration of tRES1 (See AC Characteristics) before the device will resume
normal operation and other instructions are accepted. The /CS pin must remain high during the tRES1 time
duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first. The Device ID
value for the W25Q80EW is listed in Manufacturer and Device Identification table. The Device ID can be
read continuously. The instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction is
the same as previously described, and shown in Figure 38c & 38d, except that after /CS is driven high it
must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device
will resume normal operation and other instructions will be accepted. If the Release from Power-down /
Device ID instruction is issued while an Erase, Program or Write cycle is in process (when BUSY equals
1) the instruction is ignored and will not have any effects on the current cycle.
/CS
CLK
DI
(IO0)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (ABh)
Mode 0
Mode 3
tRES1
Power-down current Stand-by current
Figure 38a. Release Power-down Instruction (SPI Mode)
W25Q80EW
- 50 -
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
ABh
Instruction Mode 0
Mode 3
tRES1
Power-down current Stand-by current
Figure 38b. Release Power-down Instruction (QPI Mode)
tRES2
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (ABh)
High Impedance
8 9 29 30 31
3 Dummy Bytes
23 22 210
*
Mode 0
Mode 3
76543210
*
32 33 34 35 36 37 38
Device ID
Power-down current Stand-by current
= MSB
*
Figure 38c. Release Power-down / Device ID Instruction (SPI Mode)
Power-down current Stand-by current
Device ID
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
ABh
2 3 4 5
X X
X X
X X
X X
678
4 0
5 1
6 2
7 3
IOs switch from
Input to Output
Instruction
tRES2
Mode 0
Mode 3
X X
X X
X X
X X
X X
X X
X X
X X
3 Dummy Bytes
Figure 38d. Release Power-down / Device ID Instruction (QPI Mode)
W25Q80EW
Publication Release Date: August 18, 2018
- 51 - Preliminary -Revision J
7.2.23 Read Manufacturer / Device ID (90h)
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down / Device
ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID.
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device ID
instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code “90h”
followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Winbond (EFh)
and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as shown
in figure 29. The Device ID values for the W25Q80EW is listed in Manufacturer and Device Identification
table. The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The
instruction is completed by driving /CS high.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (90h)
High Impedance
8 9 10 28 29 30 31
Address (000000h)
23 22 21 3 2 1 0
Device ID
*
/CS
CLK
DI
(IO0)
DO
(IO1)
32 33 34 35 36 37 38 39
Manufacturer ID (EFh)
40 41 42 44 45 46
7 6 5 4 3 2 1 0
*
4331
0
Mode 0
Mode 3
= MSB
*
Figure 29. Read Manufacturer / Device ID Diagram
W25Q80EW
- 52 -
7.2.24 Read Manufacturer / Device ID Dual I/O (92h)
The Manufacturer / Device ID Dual I/O instruction is an alternative to the Read Manufacturer/Device ID
instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID at 2x
speed.
The Read Manufacturer / Device ID Dual I/O instruction is similar to the Fast Read Dual I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “92h” followed by a
24-bit address (A23-A0) of 000000h, with the capability to input the Address bits two bits per clock. After
which, the Manufacturer ID for Winbond (EFh) and the Device ID are shifted out 2 bits per clock on the
falling edge of CLK with most significant bits (MSB) first as shown in figure 30. The Device ID values for
the W25Q80EW is listed in Manufacturer and Device Identification table. The Manufacturer and Device
IDs can be read continuously, alternating from one to the other. The instruction is completed by driving
/CS high.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (92h)
High Impedance
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
7531
* *
6420
7 5 3 1
6 4 2 0
7531
6420
7 5 3 1
6 4 2 0
23
* *
A23-16 A15-8 A7-0 (00h) M7-0
/CS
CLK
DI
(IO0)
DO
(IO1)
24 25 26 27 28 29 30 31 32 33 34 36 37 383523
0
Mode 0
Mode 3
7 5 3 1
6 4 2 0
7531
6420
7531
6420
7 5 3
6 4 2
1
0
1
MFR ID Device ID MFR ID
(repeat) Device ID
(repeat)
IOs switch from
Input to Output
* ** *
= MSB
*
Figure 30. Read Manufacturer / Device ID Dual I/O Diagram
Note:
The “Continuous Read Mode” bits M7-0 must be set to Fxh to be compatible with Fast Read Dual I/O instruction.
W25Q80EW
Publication Release Date: August 18, 2018
- 53 - Preliminary -Revision J
7.2.25 Read Manufacturer / Device ID Quad I/O (94h)
The Read Manufacturer / Device ID Quad I/O instruction is an alternative to the Read Manufacturer /
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID
at 4x speed.
The Read Manufacturer / Device ID Quad I/O instruction is similar to the Fast Read Quad I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “94h” followed by a
24-bit address (A23-A0) of 000000h, with the capability to input the Address bits four bits per clock. After
which, the Manufacturer ID for Winbond (EFh) and the Device ID are shifted out four bits per clock on the
falling edge of CLK with most significant bit (MSB) first as shown in figure 31. The Device ID values for the
W25Q80EW is listed in Manufacturer and Device Identification table. The Manufacturer and Device IDs
can be read continuously, alternating from one to the other. The instruction is completed by driving /CS
high.
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (94h)
High Impedance
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
5 1
4 0
23
Mode 0
Mode 3
IOs switch from
Input to Output
High Impedance 7 3
6 2
/CS
CLK
IO0
IO1
IO2
IO3
High Impedance
A23-16 A15-8 A7-0
(00h) M7-0
MFR ID Device ID
Dummy Dummy
/CS
CLK
IO0
IO1
IO2
IO3
23
0
1
2
3
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
24 25 26 27 28 29 30
MFR ID
(repeat) Device ID
(repeat) MFR ID
(repeat) Device ID
(repeat)
Figure 31. Read Manufacturer / Device ID Quad I/O Diagram
Note:
The “Continuous Read Mode” bits M7-0 must be set to Fxh to be compatible with Fast Read Quad I/O instruction.
W25Q80EW
- 54 -
7.2.26 Read Unique ID Number (4Bh)
The Read Unique ID Number instruction accesses a factory-set read-only 64-bit number that is unique to
each W25Q80EW device. The ID number can be used in conjunction with user software methods to help
prevent copying or cloning of a system. The Read Unique ID instruction is initiated by driving the /CS pin
low and shifting the instruction code “4Bh” followed by a four bytes of dummy clocks. After which, the 64-
bit ID is shifted out on the falling edge of CLK as shown in figure 32.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (4Bh)
High Impedance
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
/CS
CLK
DI
(IO0)
DO
(IO1)
24 25 26 27 28 29 30 31 32 33 34 36 37 383523
Mode 0
Mode 3
*
Dummy Byte 1 Dummy Byte 2
39 40 41 42
Dummy Byte 3 Dummy Byte 4
63 62 61 210
64-bit Unique Serial Number
100
101
102
High Impedance
= MSB
*
Figure 32. Read Unique ID Number Instruction Sequence
W25Q80EW
Publication Release Date: August 18, 2018
- 55 - Preliminary -Revision J
7.2.27 Read JEDEC ID (9Fh)
For compatibility reasons, the W25Q80EW provides several instructions to electronically determine the
identity of the device. The Read JEDEC ID instruction is compatible with the JEDEC standard for SPI
compatible serial memories that was adopted in 2003. The instruction is initiated by driving the /CS pin low
and shifting the instruction code “9Fh”. The JEDEC assigned Manufacturer ID byte for Winbond (EFh) and
two Device ID bytes, Memory Type (ID15-ID8) and Capacity (ID7-ID0) are then shifted out on the falling
edge of CLK with most significant bit (MSB) first as shown in Figure 43a & 43b. For memory type and
capacity values refer to Manufacturer and Device Identification table.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (9Fh)
High Impedance
8 9 10 12 13 14 15
Capacity ID7-0
/CS
CLK
DI
(IO0)
DO
(IO1)
16 17 18 19 20 21 22 23
Manufacturer ID (EFh)
24 25 26 28 29 30
7 6 5 4 3 2 1 0
*
2715
Mode 0
Mode 3
11
7 6 5 4 3 2 1 0
*
Memory Type ID15-8
= MSB
*
Figure 43a. Read JEDEC ID Instruction (SPI Mode)
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
9Fh
2 3 4 5
12 8
13 9
14 10
15 11
EFh
6
4 0
5 1
6 2
7 3
ID15-8 ID7-0
IOs switch from
Input to Output
Instruction Mode 0
Mode 3
Figure 43b. Read JEDEC ID Instruction (QPI Mode)
W25Q80EW
- 56 -
7.2.28 Read SFDP Register (5Ah)
The W25Q80EW features a 256-Byte Serial Flash Discoverable Parameter (SFDP) register that contains
information about device configurations, available instructions and other features. The SFDP parameters
are stored in one or more Parameter Identification (PID) tables. Currently only one PID table is specified,
but more may be added in the future. The Read SFDP Register instruction is compatible with the SFDP
standard initially established in 2010 for PC and other applications, as well as the JEDEC standard
JESD216-serials that is published in 2011. Most Winbond SpiFlash Memories shipped after June 2011
(date code 1124 and beyond) support the SFDP feature as specified in the applicable datasheet.
The Read SFDP instruction is initiated by driving the /CS pin low and shifting the instruction code “5Ah”
followed by a 24-bit address (A23-A0)(1) into the DI pin. Eight “dummy” clocks are also required before the
SFDP register contents are shifted out on the falling edge of the 40th CLK with most significant bit (MSB)
first as shown in Figure 44. For SFDP register values and descriptions, please refer to the Winbond
Application Note for SFDP Definition table.
Note: 1. A23-A8 = 0; A7-A0 are used to define the starting byte address for the 256-Byte SFDP Register.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (5Ah)
High Impedance
8 9 10 28 29 30 31
24-Bit Address
23 22 21 3 2 1 0
Data Out 1
*
/CS
CLK
DI
(IO0)
DO
(IO1)
32 33 34 35 36 37 38 39
Dummy Byte
High Impedance
40 41 42 44 45 46 47 48 49 50 51 52 53 54 55
765432107
Data Out 2
*
76543210
*
7 6 5 4 3 2 1 0
4331
0
= MSB
*
Figure 4. Read SFDP Register Instruction Sequence Diagram(SPI mode only)
W25Q80EW
Publication Release Date: August 18, 2018
- 57 - Preliminary -Revision J
7.2.29 Erase Security Registers (44h)
The W25Q80EW offers three 256-byte Security Registers which can be erased and programmed
individually. These registers may be used by the system manufacturers to store security and other
important information separately from the main memory array.
The Erase Security Register instruction is similar to the Sector Erase instruction. A Write Enable
instruction must be executed before the device will accept the Erase Security Register Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “44h” followed by a 24-bit address (A23-A0) to erase one of the three security registers.
ADDRESS
A23-16
A15-12
A11-8
A7-0
Security Register #1
00h
0 0 0 1
0 0 0 0
Don’t Care
Security Register #2
00h
0 0 1 0
0 0 0 0
Don’t Care
Security Register #3
00h
0 0 1 1
0 0 0 0
Don’t Care
The Erase Security Register instruction sequence is shown in Figure 45. The /CS pin must be driven high
after the eighth bit of the last byte has been latched. If this is not done the instruction will not be executed.
After /CS is driven high, the self-timed Erase Security Register operation will commence for a time
duration of tSE (See AC Characteristics). While the Erase Security Register cycle is in progress, the Read
Status Register instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is
a 1 during the erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept
other instructions again. After the Erase Security Register cycle has finished the Write Enable Latch
(WEL) bit in the Status Register is cleared to 0. The Security Register Lock Bits LB[3:1] in the Status
Register-2 can be used to OTP protect the security registers. Once a lock bit is set to 1, the corresponding
security register will be permanently locked, Erase Security Register instruction to that register will be
ignored (See 7.1.9 for detail descriptions).
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (44h)
High Impedance
8 9 29 30 31
24-Bit Address
23 22 210
*
Mode 0
Mode 3
= MSB
*
Figure 45. Erase Security Registers Instruction Sequence(SPI mode only)
W25Q80EW
- 58 -
7.2.30 Program Security Registers (42h)
The Program Security Register instruction is similar to the Page Program instruction. It allows from one
byte to 256 bytes of security register data to be programmed at previously erased (FFh) memory locations.
A Write Enable instruction must be executed before the device will accept the Program Security Register
Instruction (Status Register bit WEL= 1). The instruction is initiated by driving the /CS pin low then shifting
the instruction code “42h” followed by a 24-bit address (A23-A0) and at least one data byte, into the DI pin.
The /CS pin must be held low for the entire length of the instruction while data is being sent to the device.
ADDRESS
A23-16
A15-12
A11-8
A7-0
Security Register #1
00h
0 0 0 1
0 0 0 0
Byte Address
Security Register #2
00h
0 0 1 0
0 0 0 0
Byte Address
Security Register #3
00h
0 0 1 1
0 0 0 0
Byte Address
The Program Security Register instruction sequence is shown in Figure 46. The Security Register Lock
Bits LB[3:1] in the Status Register-2 can be used to OTP protect the security registers. Once a lock bit is
set to 1, the corresponding security register will be permanently locked, Program Security Register
instruction to that register will be ignored (See 7.1.9, 7.2.21 for detail descriptions).
/CS
CLK
DI
(IO0)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (42h)
8 9 10 28 29 30 39
24-Bit Address
23 22 21 3 2 1
*
/CS
CLK
DI
(IO0)
40 41 42 43 44 45 46 47
Data Byte 2
48 49 50 52 53 54 55
2072
7 6 5 4 3 2 1 0
5139
0
31
0
32 33 34 35 36 37 38
Data Byte 1
7654321
*
Mode 0
Mode 3
Data Byte 3
2073
2074
2075
2076
2077
2078
2079
0
Data Byte 256
*76543210
*76543210
*
= MSB
*
Figure 46. Program Security Registers Instruction Sequence(SPI mode only)
W25Q80EW
Publication Release Date: August 18, 2018
- 59 - Preliminary -Revision J
7.2.31 Read Security Registers (48h)
The Read Security Register instruction is similar to the Fast Read instruction and allows one or more data
bytes to be sequentially read from one of the three security registers. The instruction is initiated by driving
the /CS pin low and then shifting the instruction code “48h” followed by a 24-bit address (A23-A0) and
eight “dummy” clocks into the DI pin. The code and address bits are latched on the rising edge of the CLK
pin. After the address is received, the data byte of the addressed memory location will be shifted out on
the DO pin at the falling edge of CLK with most significant bit (MSB) first. The byte address is
automatically incremented to the next byte address after each byte of data is shifted out. Once the byte
address reaches the last byte of the register (byte FFh), it will reset to 00h, the first byte of the register,
and continue to increment. The instruction is completed by driving /CS high. The Read Security Register
instruction sequence is shown in Figure 47. If a Read Security Register instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Security Register instruction allows clock rates from D.C. to a
maximum of FR (see AC Electrical Characteristics).
ADDRESS
A23-16
A15-12
A11-8
A7-0
Security Register #1
00h
0 0 0 1
0 0 0 0
Byte Address
Security Register #2
00h
0 0 1 0
0 0 0 0
Byte Address
Security Register #3
00h
0 0 1 1
0 0 0 0
Byte Address
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (48h)
High Impedance
8 9 10 28 29 30 31
24-Bit Address
23 22 21 3 2 1 0
Data Out 1
*
/CS
CLK
DI
(IO0)
DO
(IO1)
32 33 34 35 36 37 38 39
Dummy Byte
High Impedance
40 41 42 44 45 46 47 48 49 50 51 52 53 54 55
765432107
Data Out 2
*
76543210
*
7 6 5 4 3 2 1 0
4331
0
= MSB
*
Figure 47. Read Security Registers Instruction Sequence(SPI mode only)
W25Q80EW
- 60 -
7.2.32 Set Read Parameters (C0h)
In QPI mode, to accommodate a wide range of applications with different needs for either maximum read
frequency or minimum data access latency, “Set Read Parameters (C0h)” instruction can be used to
configure the number of dummy clocks for “Fast Read (0Bh)”, “Fast Read Quad I/O (EBh)” & “Burst Read
with Wrap (0Ch)” instructions, and to configure the number of bytes of “Wrap Length” for the “Burst Read
with Wrap (0Ch)” instruction.
In Standard SPI mode, the “Set Read Parameters (C0h)” instruction is not accepted. The dummy clocks
for various Fast Read instructions in Standard/Dual/Quad SPI mode are fixed, please refer to the
Instruction Table 1-2 for details. The “Wrap Length” is set by W5-4 bit in the “Set Burst with Wrap (77h)”
instruction. This setting will remain unchanged when the device is switched from Standard SPI mode to
QPI mode.
The default “Wrap Length” after a power up or a Reset instruction is 8 bytes, the default number of
dummy clocks is 2. The number of dummy clocks is only programmable for “Fast Read (0Bh)”, “Fast
Read Quad I/O (EBh)” & “Burst Read with Wrap (0Ch)” instructions in the QPI mode. Whenever the
device is switched from SPI mode to QPI mode, the number of dummy clocks should be set again, prior to
any 0Bh, EBh or 0Ch instructions.
P5 – P4
DUMMY
CLOCKS
MAXIMUM
READ FREQ.
MAXIMUM
READ FREQ.
(A[1:0]=0,0)
P1 – P0
WRAP
LENGTH
0 0
2
26MHz
26MHz
0 0
8-byte
0 1
4
55MHz
80MHz
0 1
16-byte
1 0
6
80MHz
104MHz
1 0
32-byte
1 1
8
104MHz
104MHz
1 1
64-byte
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
C0h
2 3
Read
Parameters
P4 P0
P5 P1
P6 P2
P7 P3
Instruction Mode 0
Mode 3
Figure 48. Set Read Parameters Instruction (QPI Mode only)
W25Q80EW
Publication Release Date: August 18, 2018
- 61 - Preliminary -Revision J
7.2.33 Burst Read with Wrap (0Ch)
The “Burst Read with Wrap (0Ch)” instruction provides an alternative way to perform the read operation
with “Wrap Around” in QPI mode. The instruction is similar to the “Fast Read (0Bh)” instruction in QPI
mode, except the addressing of the read operation will “Wrap Around” to the beginning boundary of the
“Wrap Length” once the ending boundary is reached.
The “Wrap Length” and the number of dummy clocks can be configured by the “Set Read Parameters
(C0h)” instruction.
Dummy*
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
0Ch
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7 8 9
4 0
5 1
6 2
7 3
A15-8 A7-0
Byte 1 Byte 2
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
10 11 12 13 14
4
5
6
7
IOs switch from
Input to Output
* "Set Read Parameters" instruction (C0h) can
set the number of dummy clocks.
Byte 3
Instruction
Figure 49. Burst Read with Wrap Instruction (QPI Mode only)
W25Q80EW
- 62 -
7.2.34 Enter QPI Mode (38h)
The W25Q80EW support both Standard/Dual/Quad Serial Peripheral Interface (SPI) and Quad Peripheral
Interface (QPI). However, SPI mode and QPI mode cannot be used at the same time. “Enter QPI (38h)”
instruction is the only way to switch the device from SPI mode to QPI mode.
Upon power-up, the default state of the device upon is Standard/Dual/Quad SPI mode. This provides full
backward compatibility with earlier generations of Winbond serial flash memories. See Instruction Set
Table 1-3 for all supported SPI commands. In order to switch the device to QPI mode, the Quad Enable
(QE) bit in Status Register-2 must be set to 1 first, and an “Enter QPI (38h)” instruction must be issued. If
the Quad Enable (QE) bit is 0, the “Enter QPI (38h)” instruction will be ignored and the device will remain
in SPI mode.
See Instruction Set Table 3 for all the commands supported in QPI mode.
When the device is switched from SPI mode to QPI mode, the existing Write Enable and Program/Erase
Suspend status, and the Wrap Length setting will remain unchanged.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (38h)
High Impedance
Mode 0
Mode 3
Figure 50. Enter QPI Instruction (SPI Mode only)
W25Q80EW
Publication Release Date: August 18, 2018
- 63 - Preliminary -Revision J
7.2.35 Exit QPI Mode (FFh)
In order to exit the QPI mode and return to the Standard/Dual/Quad SPI mode, an “Exit QPI (FFh)”
instruction must be issued.
When the device is switched from QPI mode to SPI mode, the existing Write Enable Latch (WEL) and
Program/Erase Suspend status, and the Wrap Length setting will remain unchanged.
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
FFh
Instruction Mode 0
Mode 3
Figure 51. Exit QPI Instruction (QPI Mode only)
W25Q80EW
- 64 -
7.2.36 Enable Reset (66h) and Reset Device (99h)
Because of the small package and the limitation on the number of pins, the W25Q80EW provide a
software Reset instruction instead of a dedicated RESET pin. Once the Reset instruction is accepted, any
on-going internal operations will be terminated and the device will return to its default power-on state and
lose all the current volatile settings, such as Volatile Status Register bits, Write Enable Latch (WEL)
status, Program/Erase Suspend status, Read parameter setting (P7-P0), Continuous Read Mode bit
setting (M7-M0) and Wrap Bit setting (W6-W4).
“Enable Reset (66h)” and “Reset (99h)” instructions can be issued in either SPI mode or QPI mode. To
avoid accidental reset, both instructions must be issued in sequence. Any other commands other than
“Reset (99h)” after the “Enable Reset (66h)” command will disable the “Reset Enable” state. A new
sequence of “Enable Reset (66h)” and “Reset (99h)” is needed to reset the device. Once the Reset
command is accepted by the device, the device will take approximately tRST=30us to reset. During this
period, no command will be accepted.
Data corruption may happen if there is an on-going or suspended internal Erase or Program operation
when Reset command sequence is accepted by the device. It is recommended to check the BUSY bit and
the SUS bit in Status Register before issuing the Reset command sequence.
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (99h)
Mode 0
Mode 3
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (66h)
High Impedance
Figure 56a. Enable Reset and Reset Instruction Sequence (SPI Mode)
Mode 0
Mode 3 0 1
99h
Instruction Mode 0
Mode 3
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
66h
Instruction
Figure 56b. Enable Reset and Reset Instruction Sequence (QPI Mode)
W25Q80EW
Publication Release Date: August 18, 2018
- 65 - Preliminary -Revision J
8. ELECTRICAL CHARACTERISTICS
8.1 Absolute Maximum Ratings (1)
PARAMETERS
SYMBOL
CONDITIONS
RANGE
UNIT
Supply Voltage
VCC
–0.6 to 2.5V
V
Voltage Applied to Any Pin
VIO
Relative to Ground
–0.6 to VCC+0.4
V
Transient Voltage on any Pin
VIOT
<20nS Transient
Relative to Ground
–2.0V to VCC+2.0V
V
Storage Temperature
TSTG
–65 to +150
°C
Lead Temperature
TLEAD
See Note (2)
°C
Electrostatic Discharge Voltage
VESD
Human Body Model(3)
–2000 to +2000
V
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the
European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
8.2 Operating Ranges
PARAMETER
SYMBOL
CONDITIONS
SPEC
UNIT
MIN
MAX
Supply Voltage
VCC
FR = 104MHz, fR = 50MHz
1.65
1.95
V
Ambient Temperature,
Operating
TA
Industrial
–40
+85
°C
Note:
1. VCC voltage during Read can operate across the min and max range but should not exceed ±10% of
the programming (erase/write) voltage.
W25Q80EW
- 66 -
8.3 Power-up Timing and Write Inhibit Threshold
Parameter
Symbol
spec
Unit
MIN
MAX
VCC (min) to /CS Low
tVSL(1)
10
µs
Time Delay Before Write Instruction
tPUW(1)
1
10
ms
Write Inhibit Threshold Voltage
VWI(1)
1.0
1.4
V
Note:
1. These parameters are characterized only.
VCC
tVSL Read Instructions
Allowed Device is fully
Accessible
tPUW
/CS must track VCC
Program, Erase and Write Instructions are ignored
Reset
State
VCC (max)
VCC (min)
VWI
Time
Figure 37. Power-up Timing and Voltage Levels
Figure 37b. Power-up, Power-Down Requirement
W25Q80EW
Publication Release Date: August 18, 2018
- 67 - Preliminary -Revision J
8.4 DC Electrical Characteristics: Industrial:
PARAMETER
SYMBOL
CONDITIONS
SPEC
UNIT
MIN
TYP
MAX
Input Capacitance
CIN(1)
VIN = 0V
6
pF
Output Capacitance
Cout(1)
VOUT = 0V
8
pF
Input Leakage
ILI
±2
µA
I/O Leakage
ILO
±2
µA
Standby Current
ICC1
/CS = VCC,
VIN = GND or VCC
10
25
µA
Power-down Current
ICC2
/CS = VCC,
VIN = GND or VCC
0.5
7.5
µA
Current Read Data /
Dual /Quad 1MHz
ICC3(2)
C = 0.1 VCC / 0.9 VCC
DO = Open
1
3
mA
Current Read Data /
Dual /Quad 50MHz
ICC3(2)
C = 0.1 VCC / 0.9 VCC
DO = Open
4
6
mA
Current Read Data /
Dual Output / Quad
Output Read 104MHz
Icc3(2)
C = 0.1 VCC / 0.9 VCC
DO = Open
6
8
mA
Current Write Status
Register
Icc4
/CS = VCC
15
20
mA
Current Page Program
Icc5
/CS = VCC
15
20
mA
Current Sector/Block
Erase
Icc6
/CS = VCC
15
20
mA
Current Chip Erase
Icc7
/CS = VCC
15
20
mA
Input Low Voltage
Vil
-0.5
VCC x 0.3
V
Input High Voltage
Vih
VCC x 0.7
V
Output Low Voltage
Vol
Iol = 100 µA
0.2
V
Output High Voltage
Voh
Ioh = –100 µA
VCC – 0.2
V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC =1.8V.
2. Checker Board Pattern.
W25Q80EW
- 68 -
8.5 AC Measurement Conditions
PARAMETER
SYMBOL
SPEC
UNIT
MIN
MAX
Load Capacitance
CL
30
pF
Input Rise and Fall Times
TR, TF
5
ns
Input Pulse Voltages
VIN
0.1 VCC to 0.9 VCC
V
Input Timing Reference Voltages
IN
0.3 VCC to 0.7 VCC
V
Output Timing Reference Voltages
OUT
0.5 VCC to 0.5 VCC
V
Note:
1. Output Hi-Z is defined as the point where data out is no longer driven.
Input Levels
0.9 VCC
0.1 VCC
0.5 VCC
Input and Output Timing
Reference Levels
Figure 38. AC Measurement I/O Waveform
W25Q80EW
Publication Release Date: August 18, 2018
- 69 - Preliminary -Revision J
8.6 AC Electrical Characteristics:
DESCRIPTION
SYMBOL
ALT
SPEC
UNIT
MIN
TYP
MAX
Clock frequency for all instructions
except for Read Data (03h)
FR
fC
D.C.
104
MHz
Clock frequency for Read Data instruction (03h)
fR
D.C.
50
MHz
Clock High, Low Time for all instructions
except Read Data (03h)
tCLH1,
tCLL1(1)
4
ns
Clock High, Low Time
for Read Data (03h) instruction
tCRLH,
tCRLL(1)
8
ns
Clock Rise Time peak to peak
tCLCH(2)
0.1
V/ns
Clock Fall Time peak to peak
tCHCL(2)
0.1
V/ns
/CS Active Setup Time relative to CLK
tSLCH
tCSS
5
ns
/CS Not Active Hold Time relative to CLK
tCHSL
5
ns
Data In Setup Time
tDVCH
tDSU
2
ns
Data In Hold Time
tCHDX
tDH
5
ns
/CS Active Hold Time relative to CLK
tCHSH
5
ns
/CS Not Active Setup Time relative to CLK
tSHCH
5
ns
/CS Deselect Time (for Array Read Array Read)
tSHSL1
tCSH
10
ns
/CS Deselect Time (for Erase/Program Read SR)
Volatile Status Register Write Time
tSHSL2
tCSH
50
ns
Output Disable Time
tSHQZ(2)
tDIS
7
ns
Clock Low to Output Valid
tCLQV1
tV1
6
ns
Continued – next page
W25Q80EW
- 70 -
AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL
ALT
SPEC
UNIT
MIN
TYP
MAX
Output Hold Time
tCLQX
tHO
0
ns
/HOLD Active Setup Time relative to CLK
tHLCH
5
ns
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX(2)
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ(2)
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL(3)
20
ns
Write Protect Hold Time After /CS High
tSHWL(3)
100
ns
/CS High to Power-down Mode
tDP(2)
3
µs
/CS High to Standby Mode without ID Read
tRES1(2)
3
µs
/CS High to Standby Mode with ID Read
tRES2(2)
1.8
µs
/CS High to next Instruction after Suspend
tSUS(2)
20
µs
Write Status Register Time
tW
1
15
ms
Byte Program Time (First Byte) (4)
tBP1
15
30
µs
Additional Byte Program Time (After First Byte) (4)
tBP2
2.5
5
µs
Page Program Time
tPP
0.4
0.8(5)
ms
Sector Erase Time (4KB)
tSE
45
400
ms
Block Erase Time (32KB)
tBE1
150
800
ms
Block Erase Time (64KB)
tBE2
180
1,000
ms
Chip Erase Time
tce
3
10
s
Notes:
1. Clock high + Clock low must be less than or equal to 1/fc.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when SRP bit is set to 1.
4. For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N
= number of bytes programmed.
5. Maximum tPP value is specified with Page Program and 4KB Sector Erase(P/E) cycling condition
W25Q80EW
Publication Release Date: August 18, 2018
- 71 - Preliminary -Revision J
8.7 Serial Output Timing
/CS
CLK
IO
output
tCLQX tCLQV
tCLQX tCLQV tSHQZtCLL
LSB OUT
tCLH
MSB OUT
8.8 Serial Input Timing
/CS
CLK
IO
input
tCHSL
MSB IN
tSLCH
tDVCH tCHDX
tSHCHtCHSH
tCLCH tCHCL
LSB IN
tSHSL
8.9 /HOLD Timing
/CS
CLK
IO
output
/HOLD
tCHHL tHLCH
tCHHH
tHHCH
tHLQZ tHHQX
IO
input
8.10 /WP Timing
/CS
CLK
/WP
tWHSL tSHWL
IO
input
Write Status Register is allowed Write Status Register is not allowed
W25Q80EW
- 72 -
9. PACKAGE SPECIFICATION
9.1 8-Pin SOIC 208-mil (Package Code SS)
θ
Symbol
Millimeters
Inches
Min
Nom
Max
Min
Nom
Max
A
1.75
1.95
2.16
0.069
0.077
0.085
A1
0.05
0.15
0.25
0.002
0.006
0.010
A2
1.70
1.80
1.91
0.067
0.071
0.075
b
0.35
0.42
0.48
0.014
0.017
0.019
C
0.19
0.20
0.25
0.007
0.008
0.010
D
5.18
5.28
5.38
0.204
0.208
0.212
D1
5.13
5.23
5.33
0.202
0.206
0.210
E
5.18
5.28
5.38
0.204
0.208
0.212
E1
5.13
5.23
5.33
0.202
0.206
0.210
e
1.27 BSC
0.050 BSC
H
7.70
7.90
8.10
0.303
0.311
0.319
L
0.50
0.65
0.80
0.020
0.026
0.031
y
---
---
0.10
---
---
0.004
θ
0°
---
8°
0°
---
8°
W25Q80EW
Publication Release Date: August 18, 2018
- 73 - Preliminary -Revision J
9.2 8-Pin SOIC 150-mil (Package Code SN)
L
O
c
D
A1
A
e
b
SEATING PLANE
Y
0.2 5
GAUGE PLANE
E
H
E
1
8
5
4
4.00
0.25
0.51
0.25
E
c
b
A1
3.80
0.19
0.33
0.10
0.157
0.010
0.020
0.010
0.150
0.008
0.013
0.004
MAX.
DIMENSION IN MM
1.75
A
SYMBOL
MIN.
1.35
DIMENSION IN INCH
0.069
MIN.
0.053
MAX.
Control demensions are in milmeters .
1.27
0.10
6.20
L
Y
H
0
10
0.40
5.80
e
1.27 BSC
0.050
0.004
0.244
0
0.016
0.228
10
0.050 BSC
E
D
4.80
5.00
0.188
0.196
SYMBOL
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
A
1.35
1.60
1.75
0.053
0.062
0.069
A1
0.10
0.15
0.25
0.004
0.006
0.010
b
0.33
0.41
0.51
0.013
0.016
0.020
C
0.19
0.20
0.25
0.0075
0.0078
0.0098
D
4.80
4.85
5.00
0.188
0.190
0.197
E
3.80
3.90
4.00
0.150
0.153
0.157
HE
5.80
6.00
6.20
0.228
0.236
0.244
e
1.27BSC
0.050BSC
L
0.40
0.71
1.27
0.016
0.027
0.050
y
---
---
0.10
---
---
0.004
∘
0°
---
10°
0°
---
10°
W25Q80EW
- 74 -
9.3 8-Pin VSOP 150-mil (Package Code SV)
Symbol
Millimeters
Inches
Min
Nom
Max
Min
Nom
Max
A
---
---
0.90
---
---
0.035
A1
0.01
0.05
---
0.0004
0.002
---
A2
---
0.80
---
---
0.031
---
Q
0.19
0.20
0.21
0.007
0.008
0.008
b
0.33
---
0.51
0.013
---
0.020
c
0.125 BSC
0.005 BSC
D
4.80
4.90
5.00
0.189
0.193
0.197
E
5.80
6.00
6.20
0.228
0.236
0.244
E1
3.80
3.90
4.00
0.150
0.154
0.157
e
1.27 BSC
0.050 BSC
L
0.40
0.71
1.27
0.016
0.028
0.050
θ
0°
---
10°
0°
---
10°
Notes:
1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions and gate burrs shall not exceed
0.15mm per side.
2. Dimension “E1” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 0.25mm per
side.
W25Q80EW
Publication Release Date: August 18, 2018
- 75 - Preliminary -Revision J
9.4 8-Pad WSON 6x5-mm (Package Code ZP)
Symbol
Millimeters
Inches
Min
Nom
Max
Min
Nom
Max
A
0.70
0.75
0.80
0.028
0.030
0.031
A1
0.00
0.02
0.05
0.000
0.001
0.002
b
0.35
0.40
0.48
0.014
0.016
0.019
C
---
0.20 REF
---
---
0.008 REF
---
D
5.90
6.00
6.10
0.232
0.236
0.240
D2
3.35
3.40
3.45
0.132
0.134
0.136
E
4.90
5.00
5.10
0.193
0.197
0.201
E2
4.25
4.30
4.35
0.167
0.169
0.171
e
1.27 BSC
0.050 BSC
L
0.55
0.60
0.65
0.022
0.024
0.026
y
0.00
---
0.075
0.000
---
0.003
Note:
The metal pad area on the bottom center of the package is not connected to any internal electrical signals. It can be
left floating or connected to the device ground (GND pin). Avoid placement of exposed PCB vias under the pad.
W25Q80EW
- 76 -
9.5 8-Pad USON 2x3-mm (Package Code UXIE)
Notes:
1. Advanced Packaging Information; please contact Winbond for the latest minimum and maximum specifications.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E do not include mold flash protrusions and should be measured from the bottom of the package.
4. The metal pad area on the bottom center of the package is connected to the device ground (GND pin). Avoid placement of
exposed PCB vias under the pad.
W25Q80EW
Publication Release Date: August 18, 2018
- 77 - Preliminary -Revision J
9.6 8-Ball WLCSP (Package Code BY)
Symbol
Millimeters
Inches
Min
Nom
Max
Min
Nom
Max
A
0.270
0.300
0.330
0.0106
0.0118
0.0130
A1
0.048
0.068
0.088
0.0019
0.0027
0.0035
c
0.222
0.232
0.242
0.0087
0.0091
0.0095
D
1.637
1.677
1.717
0.0644
0.0660
0.0676
E
1.597
1.637
1.677
0.0629
0.0644
0.0660
D1
---
0.6385
---
---
0.0251
---
E1
---
0.2185
---
---
0.0086
---
eD
---
0.400
---
---
0.0157
---
eE
---
0.400
---
---
0.0157
---
b
0.220
0.250
0.280
0.0087
0.0098
0.0110
aaa
0.100
0.0040
bbb
0.100
0.0040
ccc
0.030
0.0012
ddd
0.150
0.0060
Notes: 1. Dimension b is measured at the maximum solder bump diameter, parallel to primary datum C.
W25Q80EW
- 78 -
9.7 Ordering Information
Notes:
1. The “W” prefix is not included on the part marking.
2. Standard bulk shipments are in Tube (shape E). Please specify alternate packing method, such as Tape and
Reel (shape T) or Tray (shape S), when placing orders.
3. For shipments with OTP feature enabled, please contact Winbond
W(1) 25Q 80E W xx(2)
W = Winbond
25Q = SpiFlash Serial Flash Memory with 4KB sectors, Dual/Quad I/O
80E = 8M-bit
W = 1.65V to 1.95V
SS = 8-pin SOIC 208-mil SN = 8-pin SOIC 150-mil SV = 8-pin VSOP 150-mil
ZP = 8-pad WSON 6x5mm UX = 8-Pad USON 2x3mm BY = 8-ball WLCSP
I = Industrial (-40°C to +85°C)
G = Green Package (Lead-free, RoHS Compliant, Halogen-free (TBBA), Antimony-Oxide-free Sb2O3)
E = Green Package with Extended Pad
Q = Green Package with SFDP Support & QE=1 in Status Register-2 (Quad Preset)
(2,3)
W25Q80EW
Publication Release Date: August 18, 2018
- 79 - Preliminary -Revision J
9.8 Valid Part Numbers and Top Side Marking
The following table provides the valid part numbers for the W25Q80EW SpiFlash Memory. Please contact
Winbond for specific availability by density and package type. Winbond SpiFlash memories use an 12-digit
Product Number for ordering. However, due to limited space, the Top Side Marking on all packages use
an abbreviated 10-digit number.
PACKAGE TYPE
DENSITY
PRODUCT NUMBER
TOP SIDE MARKING
SS
SOIC-8 208mil
8M-bit
W25Q80EWSSIG
25Q80EWSIG
SN
SOIC-8 150mil
8M-bit
W25Q80EWSNIG
W25Q80EWSNIQ
25Q80EWNIG
25Q80EWNIQ
SV(1)
VSOP-8 150mil
8M-bit
W25Q80EWSVIG
W25Q80EWSVIQ
25Q80EWVIG
25Q80EWVIQ
ZP(1)
WSON-8 6x5mm
8M-bit
W25Q80EWZPIG
W25Q80EWZPIQ
25Q80EWIG
25Q80EWIQ
UX
USON 2x3mm
8M-bit
W25Q80EWUXIE
8Lxxx
0Exxxx
BY(2)
8-ball WLCSP
8M-bit
W25Q80EWBYIG
3Axxxx(3)
Notes:
1. These package types are special order only, please contact Winbond for more information.
2. WLCSP package type BY has special top marking due to size limitation.
3. xxxx is data code.
W25Q80EW
- 80 -
10. REVISION J1ISTORY
VERSION
DATE
PAGE
DESCRIPTION
A
08/15/2014
All
New Create Preliminary
B
03/04/2015
All
Removed Preliminary
Updated SFDP & “IQ” information
C
05/25/2015
16
70
5-7,72-78
Updated status register-2
Updated tPP and note 6 information
Updated avaiable package
D
07/09/2015
10
70
Updated Operation Diagram
Removed note of 4 byte address alignment
E
07/28/2015
72
Added Mom value of SOIC8-150mm
F
09/09/2015
5-6, 72,78-79
Added SOIC8-208mil
G
12/14/2015
80
Updated SOIC-8 208mil package type
H
01/16/2017
21
68
Updated 6Bh instruncion
Updated measurement condtition VIN
I
08/22/2017
73
Updated SOP-150mil HE value
J
07/18/2018
13
13-16
Modify notice
Added volatile description
Trademarks
Winbond and SpiFlash are trademarks of Winbond Electronics Corporation.
All other marks are the property of their respective owner.
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in systems
or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for
other applications intended to support or sustain life. Furthermore, Winbond products are not intended for
applications wherein failure of Winbond products could result or lead to a situation wherein personal injury,
death or severe property or environmental damage could occur. Winbond customers using or selling these
products for use in such applications do so at their own risk and agree to fully indemnify Winbond for any
damages resulting from such improper use or sales.
Information in this document is provided solely in connection with Winbond products. Winbond
reserves the right to make changes, corrections, modifications or improvements to this document
and the products and services described herein at any time, without notice.