© 2017 IXYS CORPORATION, All Rights Reserved
IXYN30N170CV1 VCES = 1700V
IC110 = 30A
VCE(sat) 


4.0V
tfi(typ) = 95ns
DS100739B(3/17)
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250A, VGE = 0V 1700 V
VGE(th) IC= 250A, VCE = VGE 3.0 5.0 V
ICES VCE = 0.8 • VCES, VGE = 0V 25 A
TJ = 125C 4 mA
IGES VCE = 0V, VGE = 20V 100 nA
VCE(sat) IC= 30A, VGE = 15V, Note 1 3.5 4.0 V
TJ = 150C 4.6 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 175°C 1700 V
VCGR TJ= 25°C to 175°C, RGE = 1M 1700 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 80 A
IC110 TC= 110°C 30 A
IF110 TC= 110°C 33 A
ICM TC= 25°C, 1ms 270 A
SSOA VGE = 15V, TVJ = 150°C, RG = 2.7 ICM = 120 A
(RBSOA) Clamped Inductive Load 1360 V
PCTC= 25°C 680 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
VISOL 50/60Hz t = 1min 2500 V~
IISOL 1mA t = 1s 3000 V~
MdMounting Torque 1.5/13 Nm/lb.in
Terminal Connection Torque 1.3/11.5 Nm/lb.in
Weight 30 g
High Voltage
XPTTM IGBT
w/ Diode
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
2500V~ Isolation Voltage
Anti-Parallel Diode
High Voltage Package
High Blocking Voltage
Low Saturation Voltage
Advantages
Low Gate Drive Requirement
High Power Density
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
G
E
E
C
E153432
E
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN30N170CV1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
SOT-227B miniBLOC (IXYN)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 30A, VCE = 10V, Note 1 17 28 S
RGi Gate Input Resistance 2.8
Cies 3100 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 210 pF
Cres 55 pF
Qg(on) 150 nC
Qge IC = 30A, VGE = 15V, VCE = 0.5 • VCES 15 nC
Qgc 65 nC
td(on) 16 ns
tri 33 ns
Eon 3.6 mJ
td(off) 143 ns
tfi 95 ns
Eoff 1.8 mJ
td(on) 16 ns
tri 33 ns
Eon 5.5 mJ
td(off) 193 ns
tfi 134 ns
Eoff 3.5 mJ
RthJC 0.22 °C/W
RthCS 0.05 °C/W
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 0.5 • VCES, RG = 2.7
Note 3
Inductive load, TJ = 150°C
IC = 30A, VGE = 15V
VCE = 0.5 • VCES, RG = 2.7
Note 3
Reverse Diode (FRED)
(TJ = 25°C, Unless Otherwise Specified) Characteristic Value
Symbol Test Conditions Min. Typ. Max.
VF 3.5 V
TJ = 150°C 3.7 V
IRM 32 A
trr 175 ns
RthJC 0.43°C/W
IF = 30A,VGE = 0V, -diF/dt = 500A/μs,
VR = 1200V, TJ = 150°C
IF = 30A,VGE = 0V, Note 1
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2017 IXYS CORPORATION, All Rights Reserved
IXYN30N170C1
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
60
0123456
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
10V
9V
8V
7V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
300
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
10V
8V
11V
12V
7V
6V
9V
14V
13V
Fig. 3. Output Characteristics @ T
J
= 150
o
C
0
10
20
30
40
50
60
012345678
V
CE
- Volts
I
C
- Amperes
8V
V
GE
= 15V
13V
11V
10V
9V
5V
6V
7V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 30A
I
C
= 15A
I
C
= 60A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
2.0
3.0
4.0
5.0
6.0
7.0
8.0
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 60A
T
J
= 25ºC
30A
15A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
456789
V
GE
- Volts
I
C
-
Amperes
T
J
= 150
o
C
25
o
C
- 40
o
C
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN30N170CV1
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
0 102030405060708090
I
C
- Amperes
g
f s
-
Siemens
25
o
C
150
o
C
TJ
= - 40
o
C
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
200 400 600 800 1000 1200 1400 1600 1800
V
CE
- Volts
I
C
- Amperes
TJ
= 150
o
C
RG = 2.7
Ω
dv / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
0.0001
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 850V
I
C
= 30A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Cies
Coes
Cres
© 2017 IXYS CORPORATION, All Rights Reserved
IXYN30N170CV1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
2
4
6
8
10
12
3 6 9 12151821242730
R
G
- Ohms
E
off
- MilliJoules
0
5
10
15
20
25
30
E
on
- MilliJoules
E
off
E
on
T
J
= 150
º
C , V
GE
= 15V
V
CE
= 850V
I
C
= 30A
I
C
= 60A
Fig. 15. Inductive Turn-off Switching Times v s.
Gate Resistance
60
80
100
120
140
160
180
3 6 9 12151821242730
R
G
- Ohms
t
f i
- Nanoseconds
100
200
300
400
500
600
700
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150
o
C, V
GE
= 15V
V
CE
= 850V
I
C
= 60A
I
C
= 30A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
1
2
3
4
5
6
7
8
9
10
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
0
4
8
12
16
20
E
on
- MilliJoules
E
off
E
on
R
G
= 2.7
Ω
V
GE
= 15V
V
CE
= 850V
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
1
2
3
4
5
6
7
8
9
10
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
14
16
18
20
E
on
- MilliJoules
E
off
E
on
R
G
= 2.7
Ω
V
GE
= 15V
V
CE
= 850V
I
C
= 30A
I
C
= 60A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
40
60
80
100
120
140
160
180
200
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
f i
- Nanoseconds
100
120
140
160
180
200
220
240
260
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 2.7
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
100
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 2.7
Ω
, V
GE
= 15V
V
CE
= 850V I
C
= 60A
I
C
= 30A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN30N170CV1
IXYS REF: IXY_30N170CV1(7T-AT653) 3-29-17-A
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
20
40
60
80
100
120
15 20 25 30 35 40 45 50 55 60
IC - Amperes
t
r i
- Nanoseconds
14
15
16
17
18
19
20
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
R
G
= 2.7
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
25 50 75 100 125 150
TJ - Degrees Centigrade
t
r i
- Nanoseconds
14
15
16
17
18
19
20
t
d(on) - Nanoseconds
t
r i
t
d(on)
R
G
= 2.7
Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 60A
I
C
= 30A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
180
3 6 9 12151821242730
RG - Ohms
t
r i - Nanoseconds
10
15
20
25
30
35
40
45
50
55
t
d(on) - Nanoseconds
t
r i
t
d(on)
T
J
= 150
o
C, V
GE
= 15V
V
CE
= 850V
I
C
= 30A
I
C
= 60A
© 2017 IXYS CORPORATION, All Rights Reserved
IXYN30N170CV1
Fig. 26. Maximum Transient Thermal Impedance
(Diode)
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 21. Diode Forward Characteristics
0
20
40
60
80
100
01234567
V
F
(V)
I
F
(A)
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 22. Reverse Recovery Charge vs. -di
F
/dt
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
300 350 400 450 500 550 600 650 700 750 800
-di
F
/ dt (A/μs)
Q
RR
(μC)
I
F
= 60A
15A
30A
T
J
= 150
o
C
V
R
= 1200V
Fig. 23. Reverse Recovery Current vs. -di
F
/dt
15
20
25
30
35
40
45
50
55
300 400 500 600 700 800
diF/dt (A/μs)
I
RR
(A)
I
F
= 60A, 30A, 15A
T
J
= 150
o
C
V
R
= 1200V
Fig. 24. Reverse Recovery Time vs. -di
F
/dt
100
120
140
160
180
200
220
240
260
300 400 500 600 700 800
-di
F
/dt (A/μs)
t
RR
(ns)
15A
30A
I
F
= 60A
T
J
= 150
o
C
V
R
= 1200V
Fig. 25. Dynamic Parameters Q
RR, IRR
vs.
Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0 20 40 60 80 100 120 140 160
TJ
(ºC)
K
F
K
F
I
RR
K
F
Q
RR
V
R
= 1200V
I
F
= 30A
-diF/dt = 500A/μs
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.